DE69735078D1 - Herstellungsverfahren einer Lichtemittierende Vorrichtung - Google Patents
Herstellungsverfahren einer Lichtemittierende VorrichtungInfo
- Publication number
- DE69735078D1 DE69735078D1 DE69735078T DE69735078T DE69735078D1 DE 69735078 D1 DE69735078 D1 DE 69735078D1 DE 69735078 T DE69735078 T DE 69735078T DE 69735078 T DE69735078 T DE 69735078T DE 69735078 D1 DE69735078 D1 DE 69735078D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- light
- emitting device
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10783396 | 1996-04-26 | ||
JP10783396 | 1996-04-26 | ||
JP5522197 | 1997-03-10 | ||
JP05522197A JP3448450B2 (ja) | 1996-04-26 | 1997-03-10 | 発光素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69735078D1 true DE69735078D1 (de) | 2006-04-06 |
DE69735078T2 DE69735078T2 (de) | 2006-08-24 |
Family
ID=26396092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69735078T Expired - Lifetime DE69735078T2 (de) | 1996-04-26 | 1997-04-07 | Herstellungsverfahren einer Lichtemittierende Vorrichtung |
Country Status (6)
Country | Link |
---|---|
US (3) | US5990496A (de) |
EP (3) | EP0803916B1 (de) |
JP (1) | JP3448450B2 (de) |
KR (1) | KR100500331B1 (de) |
CN (2) | CN100353573C (de) |
DE (1) | DE69735078T2 (de) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3448450B2 (ja) * | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | 発光素子およびその製造方法 |
US5987048A (en) * | 1996-07-26 | 1999-11-16 | Kabushiki Kaisha Toshiba | Gallium nitride-based compound semiconductor laser and method of manufacturing the same |
JP3602856B2 (ja) * | 1998-01-21 | 2004-12-15 | ローム株式会社 | 半導体発光素子およびその製法 |
TW413972B (en) * | 1998-04-22 | 2000-12-01 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JP4214585B2 (ja) * | 1998-04-24 | 2009-01-28 | 富士ゼロックス株式会社 | 半導体デバイス、半導体デバイスの製造方法及び製造装置 |
JP2000031533A (ja) | 1998-07-14 | 2000-01-28 | Toshiba Corp | 半導体発光素子 |
US6459100B1 (en) * | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
JP3804335B2 (ja) * | 1998-11-26 | 2006-08-02 | ソニー株式会社 | 半導体レーザ |
US6316332B1 (en) | 1998-11-30 | 2001-11-13 | Lo Yu-Hwa | Method for joining wafers at a low temperature and low stress |
KR100486699B1 (ko) * | 1999-02-12 | 2005-05-03 | 삼성전자주식회사 | p형 GaN 단결정 성장 방법 |
WO2000054342A1 (en) * | 1999-03-10 | 2000-09-14 | Nova Crystals, Inc. | HIGH BRIGHTNESS NITRIDE-BASED LEDs |
JP3459588B2 (ja) * | 1999-03-24 | 2003-10-20 | 三洋電機株式会社 | 半導体レーザ素子の製造方法 |
JP3786544B2 (ja) * | 1999-06-10 | 2006-06-14 | パイオニア株式会社 | 窒化物半導体素子の製造方法及びかかる方法により製造された素子 |
JP4032636B2 (ja) * | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | 発光素子 |
JP2001244551A (ja) * | 2000-02-28 | 2001-09-07 | Sony Corp | パルセーションレーザ |
US6731663B1 (en) * | 2000-03-28 | 2004-05-04 | The Furukawa Electric Co., Ltd. | Ridge waveguide type semiconductor laser device |
KR100506077B1 (ko) * | 2000-04-15 | 2005-08-04 | 삼성전기주식회사 | 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법 |
JP5145617B2 (ja) * | 2000-07-03 | 2013-02-20 | 日亜化学工業株式会社 | n型窒化物半導体積層体およびそれを用いる半導体素子 |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
KR100591705B1 (ko) * | 2000-09-21 | 2006-06-20 | 샤프 가부시키가이샤 | 질화물 반도체 발광소자 및 그것을 포함한 광학장치 |
US6653662B2 (en) | 2000-11-01 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same, and method for driving the same |
JP4963763B2 (ja) * | 2000-12-21 | 2012-06-27 | 日本碍子株式会社 | 半導体素子 |
JP3864735B2 (ja) | 2000-12-28 | 2007-01-10 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
US6800876B2 (en) | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
USRE46589E1 (en) | 2001-01-16 | 2017-10-24 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
WO2002084831A1 (en) * | 2001-04-12 | 2002-10-24 | Nichia Corporation | Gallium nitride compound semiconductor element |
JP3819730B2 (ja) * | 2001-05-11 | 2006-09-13 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物半導体の形成方法 |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
JP2003140100A (ja) * | 2001-11-01 | 2003-05-14 | Oki Electric Ind Co Ltd | 導波路型光素子、これを用いた集積化光導波路素子、及びその製造方法 |
TWI275220B (en) | 2001-11-05 | 2007-03-01 | Nichia Corp | Nitride semiconductor device |
US6683327B2 (en) * | 2001-11-13 | 2004-01-27 | Lumileds Lighting U.S., Llc | Nucleation layer for improved light extraction from light emitting devices |
US6665329B1 (en) * | 2002-06-06 | 2003-12-16 | Sandia Corporation | Broadband visible light source based on AllnGaN light emitting diodes |
US6900067B2 (en) * | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
US6952024B2 (en) * | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
JP3767863B2 (ja) * | 2003-12-18 | 2006-04-19 | ローム株式会社 | 半導体発光素子およびその製法 |
US8030745B2 (en) | 2004-03-04 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | ID chip and IC card |
US9524869B2 (en) | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
JP2005268581A (ja) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
US8035113B2 (en) * | 2004-04-15 | 2011-10-11 | The Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
ATE527571T1 (de) * | 2004-04-15 | 2011-10-15 | Univ Boston | Optische bauelemente mit texturierten halbleiterschichten |
US7504274B2 (en) | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
EP1787330A4 (de) * | 2004-05-10 | 2011-04-13 | Univ California | Herstellung von nichtpolaren indium-gallium-nitrid-dünnfilmen, heterostrukturen und einrichtungen durch metallorganische chemische aufdampfung |
KR100611491B1 (ko) | 2004-08-26 | 2006-08-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US20070069225A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | III-V light emitting device |
JP5068020B2 (ja) | 2006-02-20 | 2012-11-07 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
JP5047508B2 (ja) | 2006-02-27 | 2012-10-10 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
JP2009152552A (ja) * | 2007-12-18 | 2009-07-09 | Seoul Opto Devices Co Ltd | 多重量子井戸構造の活性領域を有する発光ダイオード |
US8592800B2 (en) * | 2008-03-07 | 2013-11-26 | Trustees Of Boston University | Optical devices featuring nonpolar textured semiconductor layers |
JP2010123920A (ja) * | 2008-10-20 | 2010-06-03 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法 |
US8604461B2 (en) | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
CN102034912B (zh) * | 2009-12-29 | 2015-03-25 | 比亚迪股份有限公司 | 发光二极管外延片、其制作方法及芯片的制作方法 |
US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
JP5372045B2 (ja) | 2011-02-25 | 2013-12-18 | 株式会社東芝 | 半導体発光素子 |
US9781783B2 (en) | 2011-04-15 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, light-emitting system, and display system |
US11966810B2 (en) | 2012-02-06 | 2024-04-23 | Cognex Corporation | System and method for expansion of field of view in a vision system |
US8646690B2 (en) | 2012-02-06 | 2014-02-11 | Cognex Corporation | System and method for expansion of field of view in a vision system |
US9892298B2 (en) | 2012-02-06 | 2018-02-13 | Cognex Corporation | System and method for expansion of field of view in a vision system |
JP5651758B2 (ja) * | 2013-10-08 | 2015-01-14 | 株式会社東芝 | 半導体発光素子 |
KR102223037B1 (ko) | 2014-10-01 | 2021-03-05 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
CN109417274B (zh) * | 2016-06-30 | 2021-12-07 | 新唐科技日本株式会社 | 半导体激光装置、半导体激光模块及熔接用激光光源系统 |
CN110402524B (zh) * | 2017-03-16 | 2021-04-16 | 新唐科技日本株式会社 | 半导体激光装置、半导体激光模块以及焊接用激光源系统 |
CN108538978A (zh) * | 2018-04-13 | 2018-09-14 | 厦门乾照光电股份有限公司 | 一种可提高发光效率的led外延结构及其生长方法 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088390B2 (ja) | 1984-11-30 | 1996-01-29 | 三洋電機株式会社 | 半導体レーザ |
JP3160914B2 (ja) | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
JPH088217B2 (ja) | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
JP2791448B2 (ja) | 1991-04-19 | 1998-08-27 | 日亜化学工業 株式会社 | 発光ダイオード |
US5495155A (en) | 1991-06-28 | 1996-02-27 | United Technologies Corporation | Device in a power delivery circuit |
JPH05291686A (ja) * | 1992-04-14 | 1993-11-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JP3243768B2 (ja) | 1992-07-06 | 2002-01-07 | 日本電信電話株式会社 | 半導体発光素子 |
JP2875437B2 (ja) | 1992-07-30 | 1999-03-31 | シャープ株式会社 | 半導体発光素子およびその製造方法 |
JP2999638B2 (ja) * | 1992-10-28 | 2000-01-17 | 日本電信電話株式会社 | 仮想体験システム |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
JPH06164055A (ja) * | 1992-11-25 | 1994-06-10 | Asahi Chem Ind Co Ltd | 量子井戸型半導体レーザ |
JP3091593B2 (ja) | 1993-01-14 | 2000-09-25 | 日亜化学工業株式会社 | 窒化物半導体発光デバイス用積層体 |
JP3761589B2 (ja) * | 1993-03-26 | 2006-03-29 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
EP0622858B2 (de) * | 1993-04-28 | 2004-09-29 | Nichia Corporation | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
US5583878A (en) * | 1993-06-23 | 1996-12-10 | The Furukawa Electric Co., Ltd. | Semiconductor optical device |
JPH0774431A (ja) * | 1993-06-23 | 1995-03-17 | Furukawa Electric Co Ltd:The | 半導体光素子 |
JP2785254B2 (ja) | 1993-06-28 | 1998-08-13 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH0750410A (ja) * | 1993-08-06 | 1995-02-21 | Hitachi Ltd | 半導体結晶積層体及びその形成方法並びに半導体装置 |
JPH07106698A (ja) * | 1993-09-29 | 1995-04-21 | Sony Corp | 半導体発光素子 |
EP0647730B1 (de) | 1993-10-08 | 2002-09-11 | Mitsubishi Cable Industries, Ltd. | GaN-Einkristall |
JPH07267796A (ja) | 1994-03-31 | 1995-10-17 | Mitsubishi Cable Ind Ltd | GaN単結晶の製造方法 |
JP3297220B2 (ja) | 1993-10-29 | 2002-07-02 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
JP2932468B2 (ja) | 1993-12-10 | 1999-08-09 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JPH07235723A (ja) | 1994-02-23 | 1995-09-05 | Hitachi Ltd | 半導体レーザ素子 |
JP3509260B2 (ja) | 1994-03-08 | 2004-03-22 | 住友化学工業株式会社 | 3−5族化合物半導体と発光素子 |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
JP3325380B2 (ja) * | 1994-03-09 | 2002-09-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
JPH0818159A (ja) * | 1994-04-25 | 1996-01-19 | Hitachi Ltd | 半導体レーザ素子及びその作製方法 |
JP2956489B2 (ja) * | 1994-06-24 | 1999-10-04 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
US5592501A (en) * | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
JPH0997921A (ja) | 1995-07-21 | 1997-04-08 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法 |
JPH0955221A (ja) | 1995-08-10 | 1997-02-25 | Tanaka Kikinzoku Kogyo Kk | 燃料電池用プレート、燃料電池ユニット及び積層型燃料電池 |
DE69602141T2 (de) * | 1995-08-28 | 1999-10-21 | Mitsubishi Cable Industries, Ltd. | Lichtemittierende Vorrichtung auf Basis einer Nitridverbindung der Gruppe III |
JPH0964419A (ja) | 1995-08-28 | 1997-03-07 | Sumitomo Chem Co Ltd | 3−5族化合物半導体及び発光素子 |
JP3658112B2 (ja) | 1995-11-06 | 2005-06-08 | 日亜化学工業株式会社 | 窒化物半導体レーザダイオード |
CN1160801C (zh) | 1995-11-06 | 2004-08-04 | 日亚化学工业株式会社 | 氮化物半导体器件 |
JP3235440B2 (ja) | 1995-11-24 | 2001-12-04 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子とその製造方法 |
JP2900990B2 (ja) | 1995-11-24 | 1999-06-02 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JPH09186363A (ja) | 1995-12-27 | 1997-07-15 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JPH09199798A (ja) | 1996-01-18 | 1997-07-31 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
EP0817283A1 (de) | 1996-01-19 | 1998-01-07 | Matsushita Electric Industrial Co., Ltd. | Lichtemittierende vorrichtung aus einer gallium-nitrid-halbleiterverbindung und verfahren zum herstellen einer gallium-nitrid-halbleiterverbindung |
JPH09232680A (ja) | 1996-02-22 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
US5903017A (en) | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
JP3441329B2 (ja) | 1996-02-26 | 2003-09-02 | 株式会社東芝 | 窒化ガリウム系半導体素子 |
JP3754120B2 (ja) | 1996-02-27 | 2006-03-08 | 株式会社東芝 | 半導体発光装置 |
JP3399216B2 (ja) | 1996-03-14 | 2003-04-21 | ソニー株式会社 | 半導体発光素子 |
JPH09266352A (ja) | 1996-03-28 | 1997-10-07 | Fuji Photo Film Co Ltd | 半導体発光素子 |
US6072818A (en) | 1996-03-28 | 2000-06-06 | Fuji Photo Film Co., Ltd. | Semiconductor light emission device |
JP3441883B2 (ja) | 1996-04-17 | 2003-09-02 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP3778609B2 (ja) | 1996-04-26 | 2006-05-24 | 三洋電機株式会社 | 半導体素子の製造方法 |
JP3448450B2 (ja) * | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | 発光素子およびその製造方法 |
-
1997
- 1997-03-10 JP JP05522197A patent/JP3448450B2/ja not_active Expired - Lifetime
- 1997-04-07 DE DE69735078T patent/DE69735078T2/de not_active Expired - Lifetime
- 1997-04-07 EP EP97302374A patent/EP0803916B1/de not_active Expired - Lifetime
- 1997-04-07 EP EP04011150.2A patent/EP1453112B1/de not_active Expired - Lifetime
- 1997-04-07 EP EP11174758.0A patent/EP2383846B1/de not_active Expired - Lifetime
- 1997-04-25 KR KR1019970015615A patent/KR100500331B1/ko not_active IP Right Cessation
- 1997-04-25 CN CNB2004100434632A patent/CN100353573C/zh not_active Expired - Lifetime
- 1997-04-25 CN CNB971108064A patent/CN1220278C/zh not_active Expired - Lifetime
- 1997-04-25 US US08/847,471 patent/US5990496A/en not_active Expired - Lifetime
-
1999
- 1999-10-27 US US09/427,694 patent/US6162656A/en not_active Ceased
-
2002
- 2002-12-18 US US10/321,516 patent/USRE42074E1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1169036A (zh) | 1997-12-31 |
USRE42074E1 (en) | 2011-01-25 |
EP1453112A1 (de) | 2004-09-01 |
EP1453112B1 (de) | 2015-07-08 |
US5990496A (en) | 1999-11-23 |
EP0803916A3 (de) | 2000-03-08 |
KR100500331B1 (ko) | 2005-09-30 |
JPH1012923A (ja) | 1998-01-16 |
EP2383846B1 (de) | 2020-02-19 |
US6162656A (en) | 2000-12-19 |
CN100353573C (zh) | 2007-12-05 |
EP0803916A2 (de) | 1997-10-29 |
DE69735078T2 (de) | 2006-08-24 |
EP2383846A3 (de) | 2014-10-29 |
KR970072575A (ko) | 1997-11-07 |
JP3448450B2 (ja) | 2003-09-22 |
CN1540775A (zh) | 2004-10-27 |
EP0803916B1 (de) | 2006-01-11 |
CN1220278C (zh) | 2005-09-21 |
EP2383846A2 (de) | 2011-11-02 |
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