DE69433245D1 - Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante - Google Patents

Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante

Info

Publication number
DE69433245D1
DE69433245D1 DE69433245T DE69433245T DE69433245D1 DE 69433245 D1 DE69433245 D1 DE 69433245D1 DE 69433245 T DE69433245 T DE 69433245T DE 69433245 T DE69433245 T DE 69433245T DE 69433245 D1 DE69433245 D1 DE 69433245D1
Authority
DE
Germany
Prior art keywords
capacitor
manufacturing
semiconductor device
dielectric constant
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69433245T
Other languages
English (en)
Other versions
DE69433245T2 (de
Inventor
Koji Arita
Eiji Fujii
Yasuhiro Shimada
Yasuhiro Uemoto
Atsuo Inoue
Toru Nasu
Akihiro Matsuda
Yoshihisa Nagano
Taketoshi Matsuura
Tatsuo Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5194617A external-priority patent/JP2845727B2/ja
Priority claimed from JP5194618A external-priority patent/JP2960287B2/ja
Priority claimed from JP6026514A external-priority patent/JP2912816B2/ja
Priority claimed from JP06055552A external-priority patent/JP3110605B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69433245D1 publication Critical patent/DE69433245D1/de
Application granted granted Critical
Publication of DE69433245T2 publication Critical patent/DE69433245T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE69433245T 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante Expired - Fee Related DE69433245T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP5194617A JP2845727B2 (ja) 1993-08-05 1993-08-05 半導体装置の製造方法
JP5194618A JP2960287B2 (ja) 1993-08-05 1993-08-05 半導体装置およびその製造方法
JP19461793 1993-08-05
JP19461893 1993-08-05
JP2651494 1994-02-24
JP6026514A JP2912816B2 (ja) 1994-02-24 1994-02-24 半導体装置および半導体装置の製造方法
JP5555294 1994-03-25
JP06055552A JP3110605B2 (ja) 1994-03-25 1994-03-25 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69433245D1 true DE69433245D1 (de) 2003-11-20
DE69433245T2 DE69433245T2 (de) 2004-07-22

Family

ID=27458511

Family Applications (5)

Application Number Title Priority Date Filing Date
DE69432643T Expired - Fee Related DE69432643T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator
DE69433244T Expired - Fee Related DE69433244T2 (de) 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
DE69433245T Expired - Fee Related DE69433245T2 (de) 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
DE69434606T Active DE69434606T8 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69426208T Expired - Fee Related DE69426208T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69432643T Expired - Fee Related DE69432643T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator
DE69433244T Expired - Fee Related DE69433244T2 (de) 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69434606T Active DE69434606T8 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69426208T Expired - Fee Related DE69426208T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren

Country Status (5)

Country Link
US (7) US5624864A (de)
EP (6) EP0738014B1 (de)
KR (1) KR0157099B1 (de)
CN (2) CN1038210C (de)
DE (5) DE69432643T2 (de)

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EP0738013A3 (de) 1998-04-22
EP0738009B1 (de) 2003-05-07
US6015987A (en) 2000-01-18
EP0738014A3 (de) 1998-04-15
EP0736905A2 (de) 1996-10-09
CN1038210C (zh) 1998-04-29
DE69432643D1 (de) 2003-06-12
EP0738013A2 (de) 1996-10-16
US6294438B1 (en) 2001-09-25
EP0642167A2 (de) 1995-03-08
US5780351A (en) 1998-07-14
DE69434606T8 (de) 2007-05-16
EP0739037A2 (de) 1996-10-23
EP0738014A2 (de) 1996-10-16
EP0738009A3 (de) 1998-04-15
EP0736905B1 (de) 2006-01-04
EP0738009A2 (de) 1996-10-16
US5624864A (en) 1997-04-29
DE69433244T2 (de) 2004-07-29
DE69434606T2 (de) 2006-11-30
EP0739037B1 (de) 2000-10-25
CN1189687A (zh) 1998-08-05
DE69426208T2 (de) 2001-05-17
KR950007084A (ko) 1995-03-21
EP0739037A3 (de) 1998-04-29
DE69433245T2 (de) 2004-07-22
EP0738013B1 (de) 2003-10-15
US6333528B1 (en) 2001-12-25
KR0157099B1 (ko) 1998-10-15
US6107657A (en) 2000-08-22
DE69432643T2 (de) 2004-04-08
EP0736905A3 (de) 1998-04-22
CN1107345C (zh) 2003-04-30
US6169304B1 (en) 2001-01-02
DE69434606D1 (de) 2006-03-30
DE69426208D1 (de) 2000-11-30
EP0642167A3 (de) 1995-06-28
CN1102731A (zh) 1995-05-17
EP0738014B1 (de) 2003-10-15
DE69433244D1 (de) 2003-11-20

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