DE69739485D1 - Herstellungsverfahren von einem Kondensator für eine Halbleitervorrichtung - Google Patents

Herstellungsverfahren von einem Kondensator für eine Halbleitervorrichtung

Info

Publication number
DE69739485D1
DE69739485D1 DE69739485T DE69739485T DE69739485D1 DE 69739485 D1 DE69739485 D1 DE 69739485D1 DE 69739485 T DE69739485 T DE 69739485T DE 69739485 T DE69739485 T DE 69739485T DE 69739485 D1 DE69739485 D1 DE 69739485D1
Authority
DE
Germany
Prior art keywords
capacitor
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69739485T
Other languages
English (en)
Inventor
Chang-Seok Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69739485D1 publication Critical patent/DE69739485D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69739485T 1997-04-25 1997-10-15 Herstellungsverfahren von einem Kondensator für eine Halbleitervorrichtung Expired - Fee Related DE69739485D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970015531A KR100230422B1 (ko) 1997-04-25 1997-04-25 반도체장치의 커패시터 제조방법

Publications (1)

Publication Number Publication Date
DE69739485D1 true DE69739485D1 (de) 2009-08-20

Family

ID=19503895

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739485T Expired - Fee Related DE69739485D1 (de) 1997-04-25 1997-10-15 Herstellungsverfahren von einem Kondensator für eine Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US5786259A (de)
EP (1) EP0887849B1 (de)
JP (1) JP3741532B2 (de)
KR (1) KR100230422B1 (de)
DE (1) DE69739485D1 (de)
TW (1) TW365042B (de)

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KR100189982B1 (ko) * 1995-11-29 1999-06-01 윤종용 고유전체 캐패시터의 제조방법
DE19712540C1 (de) * 1997-03-25 1998-08-13 Siemens Ag Herstellverfahren für eine Kondensatorelektrode aus einem Platinmetall
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
TW427015B (en) * 1998-01-14 2001-03-21 United Microelectronics Corp Structure and manufacturing method of stacked-type capacitors
DE59813949D1 (de) * 1998-02-16 2007-05-03 Infineon Technologies Ag Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung
US6682970B1 (en) 1998-02-27 2004-01-27 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6150706A (en) * 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US7034353B2 (en) * 1998-02-27 2006-04-25 Micron Technology, Inc. Methods for enhancing capacitors having roughened features to increase charge-storage capacity
JP2001144032A (ja) * 1999-11-17 2001-05-25 Tokyo Electron Ltd ＴｉＳｉＮ薄膜およびその成膜方法、半導体装置およびその製造方法、ならびにＴｉＳｉＮ薄膜の成膜装置
US6063709A (en) * 1998-09-08 2000-05-16 Taiwan Semiconductor Manufacturing Company Removal of SOG etchback residue by argon treatment
KR100272172B1 (ko) * 1998-10-16 2000-11-15 윤종용 반도체장치의 커패시터 및 그 제조방법
US6218293B1 (en) 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
KR100505397B1 (ko) * 1998-12-30 2006-05-16 주식회사 하이닉스반도체 반도체메모리소자의캐패시터제조방법
US6320244B1 (en) * 1999-01-12 2001-11-20 Agere Systems Guardian Corp. Integrated circuit device having dual damascene capacitor
US6352944B1 (en) 1999-02-10 2002-03-05 Micron Technology, Inc. Method of depositing an aluminum nitride comprising layer over a semiconductor substrate
US6236113B1 (en) * 1999-03-05 2001-05-22 Sharp Laboratories Of America, Inc. Iridium composite barrier structure and method for same
DE19926501A1 (de) 1999-06-10 2000-12-21 Siemens Ag Verfahren zur Herstellung eines Halbleiterspeicherbauelements
US6235603B1 (en) 1999-07-12 2001-05-22 Motorola Inc. Method for forming a semiconductor device using an etch stop layer
US6368518B1 (en) 1999-08-25 2002-04-09 Micron Technology, Inc. Methods for removing rhodium- and iridium-containing films
DE19950540B4 (de) * 1999-10-20 2005-07-21 Infineon Technologies Ag Verfahren zur Herstellung einer Kondensator-Elektrode mit Barrierestruktur
KR101024449B1 (ko) 1999-12-09 2011-03-23 도쿄엘렉트론가부시키가이샤 티탄실리콘나이트라이드막의 성막방법 및 반도체장치의 제조방법
KR100311050B1 (ko) * 1999-12-14 2001-11-05 윤종용 커패시터의 전극 제조 방법
US6436838B1 (en) 2000-04-21 2002-08-20 Applied Materials, Inc. Method of patterning lead zirconium titanate and barium strontium titanate
US6482736B1 (en) * 2000-06-08 2002-11-19 Micron Technology, Inc. Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
JP4286439B2 (ja) 2000-08-11 2009-07-01 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP3824878B2 (ja) * 2001-03-30 2006-09-20 セイコーエプソン株式会社 インク組成物、記録媒体、インクジェット記録方法、および記録物
US6524908B2 (en) * 2001-06-01 2003-02-25 International Business Machines Corporation Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
KR100420121B1 (ko) * 2001-06-21 2004-03-02 삼성전자주식회사 강유전막을 평탄화막으로 이용하는 강유전체 메모리 장치 및 그 제조방법
JP2003007855A (ja) * 2001-06-26 2003-01-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100418585B1 (ko) * 2001-06-30 2004-02-14 주식회사 하이닉스반도체 강유전체 메모리 소자에서의 캐패시터의 제조방법
KR100423906B1 (ko) * 2001-08-08 2004-03-22 삼성전자주식회사 강유전성 메모리 장치 및 그 제조방법
KR100424710B1 (ko) * 2001-11-21 2004-03-27 주식회사 하이닉스반도체 반도체 소자의 제조방법
US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US7049237B2 (en) 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US7121926B2 (en) 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
KR100431815B1 (ko) * 2002-07-18 2004-05-17 주식회사 하이닉스반도체 반도체소자의 제조방법
KR20050002032A (ko) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 엠티피 구조의 캐패시터를 구비하는 강유전체 메모리소자의 제조 방법
KR100533973B1 (ko) * 2003-06-30 2005-12-07 주식회사 하이닉스반도체 하부전극과 강유전체막의 접착력을 향상시킬 수 있는강유전체캐패시터 형성 방법
US7045368B2 (en) * 2004-05-19 2006-05-16 Headway Technologies, Inc. MRAM cell structure and method of fabrication
KR100568257B1 (ko) * 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
JP5127251B2 (ja) * 2007-02-01 2013-01-23 パナソニック株式会社 半導体装置の製造方法
KR102476691B1 (ko) * 2015-12-21 2022-12-14 에스케이하이닉스 주식회사 반도체 장치의 제조방법

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Publication number Priority date Publication date Assignee Title
US5335138A (en) * 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
JP2550852B2 (ja) * 1993-04-12 1996-11-06 日本電気株式会社 薄膜キャパシタの製造方法
JP3267389B2 (ja) * 1993-06-23 2002-03-18 沖電気工業株式会社 メモリセルのキャパシタ形成方法
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
US5385866A (en) * 1994-06-22 1995-01-31 International Business Machines Corporation Polish planarizing using oxidized boron nitride as a polish stop
US5670410A (en) * 1996-09-25 1997-09-23 Chartered Semiconductor Manufacturing Pte Ltd. Method of forming integrated CMP stopper and analog capacitor

Also Published As

Publication number Publication date
JPH10303395A (ja) 1998-11-13
EP0887849A2 (de) 1998-12-30
TW365042B (en) 1999-07-21
EP0887849B1 (de) 2009-07-08
KR100230422B1 (ko) 1999-11-15
EP0887849A3 (de) 1999-06-16
KR19980078105A (ko) 1998-11-16
JP3741532B2 (ja) 2006-02-01
US5786259A (en) 1998-07-28

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee