KR910005465A - 반도체기억장치의 제조방법 - Google Patents
반도체기억장치의 제조방법Info
- Publication number
- KR910005465A KR910005465A KR1019900013454A KR900013454A KR910005465A KR 910005465 A KR910005465 A KR 910005465A KR 1019900013454 A KR1019900013454 A KR 1019900013454A KR 900013454 A KR900013454 A KR 900013454A KR 910005465 A KR910005465 A KR 910005465A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR1990/000013 WO1992003960A1 (en) | 1990-08-30 | 1990-11-08 | Towel hanger for use in bathroom |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01-225303 | 1989-08-31 | ||
JP1225303A JPH0388370A (ja) | 1989-08-31 | 1989-08-31 | 半導体記憶装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910005465A true KR910005465A (ko) | 1991-03-30 |
KR930010015B1 KR930010015B1 (ko) | 1993-10-14 |
Family
ID=16827230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900013454A KR930010015B1 (ko) | 1989-08-31 | 1990-08-30 | 반도체기억장치의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5541129A (ko) |
EP (1) | EP0415775B1 (ko) |
JP (1) | JPH0388370A (ko) |
KR (1) | KR930010015B1 (ko) |
AU (1) | AU6630890A (ko) |
DE (1) | DE69017803T2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2904341B2 (ja) * | 1996-03-06 | 1999-06-14 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JPH09260613A (ja) * | 1996-03-19 | 1997-10-03 | Oki Electric Ind Co Ltd | トンネル絶縁膜の膜質評価方法 |
US5960302A (en) * | 1996-12-31 | 1999-09-28 | Lucent Technologies, Inc. | Method of making a dielectric for an integrated circuit |
US6143608A (en) * | 1999-03-31 | 2000-11-07 | Advanced Micro Devices, Inc. | Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation |
JP3613072B2 (ja) * | 1999-06-02 | 2005-01-26 | 株式会社デンソー | 不揮発性半導体メモリの電荷保持寿命評価方法 |
KR100546407B1 (ko) * | 2004-04-30 | 2006-01-26 | 삼성전자주식회사 | Eeprom 셀 제조방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
JPS5966171A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 半導体装置 |
JPS6184868A (ja) * | 1984-10-02 | 1986-04-30 | Nec Corp | 不揮発性半導体記憶装置 |
JPH0669099B2 (ja) * | 1984-12-21 | 1994-08-31 | 株式会社東芝 | Mis型半導体装置 |
US4789883A (en) * | 1985-12-17 | 1988-12-06 | Advanced Micro Devices, Inc. | Integrated circuit structure having gate electrode and underlying oxide and method of making same |
JPS6325955A (ja) * | 1986-07-18 | 1988-02-03 | Toshiba Corp | 半導体装置の製造方法 |
US5008721A (en) * | 1988-07-15 | 1991-04-16 | Texas Instruments Incorporated | Electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel |
US5017979A (en) * | 1989-04-28 | 1991-05-21 | Nippondenso Co., Ltd. | EEPROM semiconductor memory device |
US5063423A (en) * | 1989-04-28 | 1991-11-05 | Nippondenso Co., Ltd. | Semiconductor memory device of a floating gate tunnel oxide type |
JPH081933B2 (ja) * | 1989-12-11 | 1996-01-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
-
1989
- 1989-08-31 JP JP1225303A patent/JPH0388370A/ja active Pending
-
1990
- 1990-08-30 EP EP90309526A patent/EP0415775B1/en not_active Expired - Lifetime
- 1990-08-30 KR KR1019900013454A patent/KR930010015B1/ko not_active IP Right Cessation
- 1990-08-30 DE DE69017803T patent/DE69017803T2/de not_active Expired - Fee Related
- 1990-11-08 AU AU66308/90A patent/AU6630890A/en not_active Abandoned
-
1994
- 1994-08-15 US US08/290,073 patent/US5541129A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5541129A (en) | 1996-07-30 |
DE69017803T2 (de) | 1995-09-28 |
JPH0388370A (ja) | 1991-04-12 |
EP0415775A2 (en) | 1991-03-06 |
DE69017803D1 (de) | 1995-04-20 |
AU6630890A (en) | 1992-03-30 |
EP0415775B1 (en) | 1995-03-15 |
KR930010015B1 (ko) | 1993-10-14 |
EP0415775A3 (en) | 1991-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090928 Year of fee payment: 17 |
|
EXPY | Expiration of term |