DE69534517D1 - Herstellungsverfahren für Kondensator mit hoher Kapazität - Google Patents
Herstellungsverfahren für Kondensator mit hoher KapazitätInfo
- Publication number
- DE69534517D1 DE69534517D1 DE69534517T DE69534517T DE69534517D1 DE 69534517 D1 DE69534517 D1 DE 69534517D1 DE 69534517 T DE69534517 T DE 69534517T DE 69534517 T DE69534517 T DE 69534517T DE 69534517 D1 DE69534517 D1 DE 69534517D1
- Authority
- DE
- Germany
- Prior art keywords
- production method
- high capacity
- capacity capacitor
- capacitor
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95830459A EP0772246B1 (de) | 1995-10-31 | 1995-10-31 | Herstellungsverfahren für Kondensator mit hoher Kapazität |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69534517D1 true DE69534517D1 (de) | 2006-02-23 |
Family
ID=8222043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534517T Expired - Fee Related DE69534517D1 (de) | 1995-10-31 | 1995-10-31 | Herstellungsverfahren für Kondensator mit hoher Kapazität |
Country Status (3)
Country | Link |
---|---|
US (1) | US6222245B1 (de) |
EP (1) | EP0772246B1 (de) |
DE (1) | DE69534517D1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3592028B2 (ja) * | 1997-04-03 | 2004-11-24 | 富士通株式会社 | 昇圧回路および半導体集積回路 |
SE9801118D0 (sv) * | 1998-03-30 | 1998-03-30 | Astra Ab | Electrical device |
DE69941178D1 (de) | 1998-12-29 | 2009-09-10 | Nxp Bv | Integrierter Schaltkreis mit einem Kapazitätsnetzwerk mit niedriger Dispersion |
US6674321B1 (en) * | 2001-10-31 | 2004-01-06 | Agile Materials & Technologies, Inc. | Circuit configuration for DC-biased capacitors |
US20040259316A1 (en) * | 2001-12-05 | 2004-12-23 | Baki Acikel | Fabrication of parallel plate capacitors using BST thin films |
US6888399B2 (en) * | 2002-02-08 | 2005-05-03 | Rohm Co., Ltd. | Semiconductor device equipped with a voltage step-up circuit |
US6548855B1 (en) | 2002-05-16 | 2003-04-15 | Advanced Micro Devices, Inc. | Non-volatile memory dielectric as charge pump dielectric |
US6842327B1 (en) * | 2003-08-05 | 2005-01-11 | Impinj, Inc. | High-voltage CMOS-compatible capacitors |
US7157784B2 (en) * | 2005-01-31 | 2007-01-02 | Texas Instruments Incorporated | Drain extended MOS transistors with multiple capacitors and methods of fabrication |
US20070024393A1 (en) * | 2005-07-27 | 2007-02-01 | Forse Roger J | Tunable notch duplexer |
US7495886B2 (en) * | 2005-07-27 | 2009-02-24 | Agile Rf, Inc. | Dampening of electric field-induced resonance in parallel plate capacitors |
US7304339B2 (en) * | 2005-09-22 | 2007-12-04 | Agile Rf, Inc. | Passivation structure for ferroelectric thin-film devices |
US7728377B2 (en) * | 2005-09-23 | 2010-06-01 | Agile Rf, Inc. | Varactor design using area to perimeter ratio for improved tuning range |
US7675388B2 (en) * | 2006-03-07 | 2010-03-09 | Agile Rf, Inc. | Switchable tunable acoustic resonator using BST material |
DE102017105839A1 (de) * | 2017-03-17 | 2018-09-20 | Schaffner Emv Ag | Aktives Filter |
US11764209B2 (en) * | 2020-10-19 | 2023-09-19 | MW RF Semiconductors, LLC | Power semiconductor device with forced carrier extraction and method of manufacture |
US20220209750A1 (en) * | 2020-12-29 | 2022-06-30 | Texas Instruments Incorporated | Quality factor of a parasitic capacitance |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4211941A (en) * | 1978-08-03 | 1980-07-08 | Rca Corporation | Integrated circuitry including low-leakage capacitance |
JPS5823470A (ja) | 1981-08-06 | 1983-02-12 | Oki Electric Ind Co Ltd | 半導体装置 |
US4527180A (en) * | 1983-01-31 | 1985-07-02 | Intel Corporation | MOS Voltage divider structure suitable for higher potential feedback regulation |
US5014097A (en) * | 1987-12-24 | 1991-05-07 | Waferscale Integration, Inc. | On-chip high voltage generator and regulator in an integrated circuit |
US4914546A (en) * | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
JPH0383371A (ja) * | 1989-08-28 | 1991-04-09 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置の昇圧回路 |
JPH0389545A (ja) * | 1989-08-31 | 1991-04-15 | Sharp Corp | 集積回路のためのキャパシタ |
US5392205A (en) | 1991-11-07 | 1995-02-21 | Motorola, Inc. | Regulated charge pump and method therefor |
JP2851757B2 (ja) * | 1992-12-18 | 1999-01-27 | 三菱電機株式会社 | 半導体装置および半導体記憶装置 |
-
1995
- 1995-10-31 DE DE69534517T patent/DE69534517D1/de not_active Expired - Fee Related
- 1995-10-31 EP EP95830459A patent/EP0772246B1/de not_active Expired - Lifetime
-
1996
- 1996-10-30 US US08/739,997 patent/US6222245B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0772246A1 (de) | 1997-05-07 |
US6222245B1 (en) | 2001-04-24 |
EP0772246B1 (de) | 2005-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |