DE69941178D1 - Integrierter Schaltkreis mit einem Kapazitätsnetzwerk mit niedriger Dispersion - Google Patents

Integrierter Schaltkreis mit einem Kapazitätsnetzwerk mit niedriger Dispersion

Info

Publication number
DE69941178D1
DE69941178D1 DE69941178T DE69941178T DE69941178D1 DE 69941178 D1 DE69941178 D1 DE 69941178D1 DE 69941178 T DE69941178 T DE 69941178T DE 69941178 T DE69941178 T DE 69941178T DE 69941178 D1 DE69941178 D1 DE 69941178D1
Authority
DE
Germany
Prior art keywords
integrated circuit
low dispersion
capacity network
dispersion capacity
network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941178T
Other languages
English (en)
Inventor
Fabrice Jovenin
Benoit Butaye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE69941178D1 publication Critical patent/DE69941178D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
DE69941178T 1998-12-29 1999-12-20 Integrierter Schaltkreis mit einem Kapazitätsnetzwerk mit niedriger Dispersion Expired - Lifetime DE69941178D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9816565 1998-12-29

Publications (1)

Publication Number Publication Date
DE69941178D1 true DE69941178D1 (de) 2009-09-10

Family

ID=9534609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941178T Expired - Lifetime DE69941178D1 (de) 1998-12-29 1999-12-20 Integrierter Schaltkreis mit einem Kapazitätsnetzwerk mit niedriger Dispersion

Country Status (7)

Country Link
US (1) US6278871B1 (de)
EP (1) EP1017101B1 (de)
JP (1) JP4601751B2 (de)
KR (1) KR100707877B1 (de)
CN (1) CN1153293C (de)
DE (1) DE69941178D1 (de)
TW (1) TW460929B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100372863B1 (ko) * 1997-11-18 2003-02-19 마쯔시다덴기산교 가부시키가이샤 적층체, 콘덴서, 및 적층체의 제조 방법
JP4034099B2 (ja) * 2002-03-28 2008-01-16 株式会社ルネサステクノロジ 高周波用モノリシック集積回路装置およびその製造方法
KR100450824B1 (ko) * 2002-11-06 2004-10-01 삼성전자주식회사 고주파용 가변 캐패시터 구조 및 그 제조방법
US7518850B2 (en) * 2006-05-18 2009-04-14 International Business Machines Corporation High yield, high density on-chip capacitor design
CN111192873B (zh) * 2020-01-09 2020-09-04 华南理工大学 一种提高mim电容高频可靠性的版图结构及其实现方法
CN112436848B (zh) * 2020-12-04 2022-08-05 深圳市锐尔觅移动通信有限公司 调谐电路、射频电路及电子设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516461B2 (de) * 1974-03-25 1980-05-02
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
JPH0389545A (ja) * 1989-08-31 1991-04-15 Sharp Corp 集積回路のためのキャパシタ
JPH03257855A (ja) * 1990-03-07 1991-11-18 Matsushita Electron Corp 半導体装置
US5189594A (en) * 1991-09-20 1993-02-23 Rohm Co., Ltd. Capacitor in a semiconductor integrated circuit and non-volatile memory using same
US5256588A (en) * 1992-03-23 1993-10-26 Motorola, Inc. Method for forming a transistor and a capacitor for use in a vertically stacked dynamic random access memory cell
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
GB9416900D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd A variable capacitance semiconductor diode
US5448772A (en) * 1994-08-29 1995-09-05 Motorola, Inc. Stacked double balanced mixer circuit
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
EP0772246B1 (de) 1995-10-31 2005-10-12 STMicroelectronics S.r.l. Herstellungsverfahren für Kondensator mit hoher Kapazität
US6057224A (en) * 1996-03-29 2000-05-02 Vlsi Technology, Inc. Methods for making semiconductor devices having air dielectric interconnect structures
US5807775A (en) * 1996-06-24 1998-09-15 Vanguard International Semiconductor Corporation Method for forming a double walled cylindrical capacitor for a DRAM
EP0836271B1 (de) * 1996-10-10 2003-01-29 Philips Electronics N.V. Integrierter Oszillator und einen solchen Oszillator verwendendes Funktelefon
SE520173C2 (sv) * 1997-04-29 2003-06-03 Ericsson Telefon Ab L M Förfarande för tillverkning av en kondensator i en integrerad krets

Also Published As

Publication number Publication date
KR20000052585A (ko) 2000-08-25
EP1017101B1 (de) 2009-07-29
CN1153293C (zh) 2004-06-09
TW460929B (en) 2001-10-21
KR100707877B1 (ko) 2007-04-16
US6278871B1 (en) 2001-08-21
CN1259770A (zh) 2000-07-12
JP2000216326A (ja) 2000-08-04
EP1017101A1 (de) 2000-07-05
JP4601751B2 (ja) 2010-12-22

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Legal Events

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