SE9801118D0 - Electrical device - Google Patents
Electrical deviceInfo
- Publication number
- SE9801118D0 SE9801118D0 SE9801118A SE9801118A SE9801118D0 SE 9801118 D0 SE9801118 D0 SE 9801118D0 SE 9801118 A SE9801118 A SE 9801118A SE 9801118 A SE9801118 A SE 9801118A SE 9801118 D0 SE9801118 D0 SE 9801118D0
- Authority
- SE
- Sweden
- Prior art keywords
- capacitor
- conductive layer
- dielectric layer
- plate
- disposed over
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 11
- 230000003071 parasitic effect Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9801118A SE9801118D0 (sv) | 1998-03-30 | 1998-03-30 | Electrical device |
AU35441/99A AU3544199A (en) | 1998-03-30 | 1999-03-30 | Voltage boosting circuit including capacitor with reduced parasitic capacitance |
EP99917290A EP1084501A1 (en) | 1998-03-30 | 1999-03-30 | Voltage boosting circuit including capacitor with reduced parasitic capacitance |
JP2000541698A JP2002510855A (ja) | 1998-03-30 | 1999-03-30 | 寄生キャパシタンスを低減したキャパシタを含む電圧ブースト回路 |
CN99804815A CN1296630A (zh) | 1998-03-30 | 1999-03-30 | 包括具有减小的寄生电容的电容器的电压升压电路 |
PCT/SE1999/000536 WO1999050862A1 (en) | 1998-03-30 | 1999-03-30 | Voltage boosting circuit including capacitor with reduced parasitic capacitance |
US09/297,867 US20010043114A1 (en) | 1998-03-30 | 1999-05-30 | Voltage boosting circuit including capacitor with reduced parasitic capacitance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9801118A SE9801118D0 (sv) | 1998-03-30 | 1998-03-30 | Electrical device |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9801118D0 true SE9801118D0 (sv) | 1998-03-30 |
Family
ID=20410798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9801118A SE9801118D0 (sv) | 1998-03-30 | 1998-03-30 | Electrical device |
Country Status (7)
Country | Link |
---|---|
US (1) | US20010043114A1 (sv) |
EP (1) | EP1084501A1 (sv) |
JP (1) | JP2002510855A (sv) |
CN (1) | CN1296630A (sv) |
AU (1) | AU3544199A (sv) |
SE (1) | SE9801118D0 (sv) |
WO (1) | WO1999050862A1 (sv) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6694416B1 (en) | 1999-09-02 | 2004-02-17 | Micron Technology, Inc. | Double data rate scheme for data output |
FR2844648B1 (fr) * | 2002-09-16 | 2004-10-15 | Commissariat Energie Atomique | Pompe de charges a injection de charges |
EP2306626A1 (en) * | 2009-09-30 | 2011-04-06 | Nxp B.V. | Voltage conversion circuit |
US10008872B2 (en) | 2010-09-20 | 2018-06-26 | Batteroo, Inc. | Methods of extending the life of battery |
CN105261800A (zh) | 2010-09-20 | 2016-01-20 | 巴特鲁股份有限公司 | 用于延长电池寿命的结构和方法 |
US20150198484A1 (en) * | 2012-07-06 | 2015-07-16 | Pricer Ab | Electronic shelf label with an optical arrangement |
JP6030900B2 (ja) * | 2012-09-21 | 2016-11-24 | 旭化成エレクトロニクス株式会社 | チャージポンプ回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4914546A (en) * | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
EP0631370B1 (en) * | 1993-06-21 | 2003-05-28 | STMicroelectronics S.r.l. | Voltage multiplier for high output current with stabilized output voltage |
DE69424668T2 (de) * | 1994-08-31 | 2001-01-25 | St Microelectronics Srl | Spannungsvervielfacher mit linearstabilisierten Ausgangspannung |
EP0772246B1 (en) * | 1995-10-31 | 2005-10-12 | STMicroelectronics S.r.l. | Manufacturing process for high capacity capacitor |
-
1998
- 1998-03-30 SE SE9801118A patent/SE9801118D0/sv unknown
-
1999
- 1999-03-30 AU AU35441/99A patent/AU3544199A/en not_active Abandoned
- 1999-03-30 CN CN99804815A patent/CN1296630A/zh active Pending
- 1999-03-30 WO PCT/SE1999/000536 patent/WO1999050862A1/en not_active Application Discontinuation
- 1999-03-30 EP EP99917290A patent/EP1084501A1/en not_active Withdrawn
- 1999-03-30 JP JP2000541698A patent/JP2002510855A/ja active Pending
- 1999-05-30 US US09/297,867 patent/US20010043114A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN1296630A (zh) | 2001-05-23 |
US20010043114A1 (en) | 2001-11-22 |
AU3544199A (en) | 1999-10-18 |
WO1999050862A1 (en) | 1999-10-07 |
EP1084501A1 (en) | 2001-03-21 |
JP2002510855A (ja) | 2002-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970063716A (ko) | 집적형 디커플링 커패시터를 구비한 집적 회로 | |
SE9703295D0 (sv) | Electrical devices and a method of manufacturing the same | |
TW200505033A (en) | Capacitor and method of fabricating the same | |
KR840003923A (ko) | 반도체 메모리 | |
JP2002094054A5 (sv) | ||
TWI257114B (en) | Integrated capacitor | |
MY136263A (en) | Electronic assemblies and systems comprising interposer with embedded capacitors | |
EP1189262A3 (en) | Semiconductor device comprising a capacitor and method of manufacturing the same | |
DE60031887D1 (de) | Elektronikgehäuse mit kondensator | |
KR930018716A (ko) | 모놀리식 고전압 캐패시터 및 그의 제조방법 | |
ATE533229T1 (de) | Elektronische vorrichtung | |
SE9801118D0 (sv) | Electrical device | |
TW367621B (en) | Electronic component comprising a thin-film structure with passive elements | |
BR0015835A (pt) | Suporte plano com ao menos um chip semicondutor | |
EP1981087A3 (en) | Electrical device comprising a voltage dependant capacitance and method for manufacturing the same | |
TW200516728A (en) | Capacitor-related systems for addressing package/motherboard resonance | |
EP1109227A3 (en) | Via capacitor | |
ATE110902T1 (de) | Kapazitive schaltungskarte. | |
KR900701044A (ko) | 반도체 장치 | |
DE60118358D1 (de) | Kondensator mit variabler kapazität | |
TW346679B (en) | Semiconductor device with increased semiconductor capacitance and method of manufacturing the same | |
TW360977B (en) | DRAM and circuit structure thereof | |
JP2501869Y2 (ja) | 負電源高周波集積回路実装構造 | |
KR910008866A (ko) | 반도체 집적회로 장치 및 그 제조방법 | |
TW200507282A (en) | Metal insulator metal capacitor |