KR930018716A - 모놀리식 고전압 캐패시터 및 그의 제조방법 - Google Patents

모놀리식 고전압 캐패시터 및 그의 제조방법 Download PDF

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KR930018716A
KR930018716A KR1019930001465A KR930001465A KR930018716A KR 930018716 A KR930018716 A KR 930018716A KR 1019930001465 A KR1019930001465 A KR 1019930001465A KR 930001465 A KR930001465 A KR 930001465A KR 930018716 A KR930018716 A KR 930018716A
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capacitor
plate
semi
conductor
layer
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리더 엠브리 밀턴
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스코트 더블유. 맥릴란
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR930018716A publication Critical patent/KR930018716A/ko

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Abstract

본 발명은 집적 회로등을 위한 고전압 캐패시터(10) 구조에 관한 것이다. 상기 캐패시터는 다중 캐패시터가 직렬로 결합될때 전하를 이퀼라이즈 시킨다. 전하는 상기 캐패시터의 한 전극(13) 위에 그와 접촉된 상태로 배치된 SiN 층(18)에 의해 이퀼라이즈 된다. 접지 링(ground ring)(17)은 캐패시터 구조를 에워싸고 있으며 상기 SiN층 아래에 그와 접촉된 상태로 배치된다.

Description

모놀리식 고전압 캐패시터 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 따른 고전압 캐패시터의 단면도.
제2도는 층(18)이 제거된 제1도의 고전압 캐패시터의 평면도.

Claims (13)

  1. 제1플레이트(12)와 그 위쪽에 위치하여 그와 분리되도록 형성된 제2플레이트(13)를 가진 캐패시터 (10)에 있어서, 상기 제2플레이트와 접촉된 상태로 배치된 반절연체 층(18), 및 상기 제1 및 제2플레이트로부터 분리되고 상기 반절연체 층과 접촉하는 컨덕터(17)를 포함하는 것을 특징으로 하는 캐패시터.
  2. 제1항에 있어서, 상기 제1플레이트가 유전체 층(14, 16)에 의해 상기 제2플레이트로부터 분리되는 것을 특징으로 하는 캐패시터.
  3. 제2항에 있어서, 상기 반절연체 층이 제2플레이트 위쪽에 배치되는 것을 특징으로 하는 캐패시터.
  4. 제3항에 있어서, 상기 컨덕터가 상기 제2플레이트에 인접하여 그것을 에워싸도록 배치되는 것을 특징으로 하는 캐패시터.
  5. 제4항에 있어서, 상기 반절연체가 질화 규소인 것을 특징으로 하는 캐패시터.
  6. 제1플레이트(12)와 그 위쪽에 위치하여 그것으로부터 분리되도록 형성된 제2플레이트(13)를 가진 캐패시터(10)를 제조하는 방법에 있어서, 상기 제1 및 제2플레이트로부터 분리된 컨덕터(17)를 형성하는 단계, 및 상기 제2플레이트 및 컨덕터와 접촉하는 반절연체 층(18)을 침전시키는 단계를 포함하는 것을 특징으로 하는 캐패시터.
  7. 제6항에 있어서, 상기 제1플레이트와 제2플레이트 사이에 유전체 층(14, 16)을 침전시키는 단계를 포함하는 것을 특징으로 하는 캐패시터.
  8. 제7항에 있어서, 상기 반절연체 층이 제2플레이트돠 컨덕터 위쪽에 배치되는 것을 특징으로 하는 캐패시터.
  9. 제8항에 있어서, 상기 컨덕터가 상기 제2플레이트에 인접하도록 배치된 링인 것을 특징으로 하는 캐패시터.
  10. 제9항에 있어서, 상기 반절연체 층이 질화 규소인 것을 특징으로 하는 캐패시터.
  11. 반도체 기판(11)의 표면을 따라 제1(12) 및 제2플레이트(13)를 가진 캐패시터(10)를 제조하는 방법에 있어서, 상기 캐패시터의 제1플레이트를 형성하기 위해 도펀트를 반도체 표면에 주입시키는 단계, 상기 주입된 도펀트 위에 유전 층(14,16)을 침전시키는 단계, 상기 캐패시터의 제2플레이트를 형성하기 위해 상기 유전체 층위에 도전층을 침전시키는 단계와, 상기 전도층으로부터 분리된 컨덕터(17)를 상기 유전체 층상에 형성하는 단계, 및 상기 전도층과 컨덕터 위쪽에 접촉된 상태로 반절연체 층(18)을 침전시키는 단계를 포함하는 캐패시터 제조방법.
  12. 제11항에 있어서, 상기 컨덕터가 상기 전도층에 인접하여 그것을 에워싸도록 배치된 링인 것을 특징으로 하는 캐패시터.
  13. 제12항에 있어서, 상기 반절연체가 질화 규소인 것을 특징으로 하는 캐패시터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930001465A 1992-02-14 1993-02-04 모놀리식 고전압 캐패시터 및 그의 제조방법 KR930018716A (ko)

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US837,305 1992-02-14
US07/837,305 US5187637A (en) 1992-02-14 1992-02-14 Monolithic high-voltage capacitor

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KR930018716A true KR930018716A (ko) 1993-09-22

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US (1) US5187637A (ko)
EP (1) EP0555995B1 (ko)
JP (1) JP2971280B2 (ko)
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DE (1) DE69322891T2 (ko)

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EP0555995A2 (en) 1993-08-18
EP0555995A3 (en) 1994-06-01
DE69322891T2 (de) 1999-08-12
EP0555995B1 (en) 1999-01-07
JP2971280B2 (ja) 1999-11-02
DE69322891D1 (de) 1999-02-18
US5187637A (en) 1993-02-16
JPH0685168A (ja) 1994-03-25

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