DE69034136T2 - Bipolarer transistor mit isolierter steuerelektrode - Google Patents
Bipolarer transistor mit isolierter steuerelektrode Download PDFInfo
- Publication number
- DE69034136T2 DE69034136T2 DE69034136T DE69034136T DE69034136T2 DE 69034136 T2 DE69034136 T2 DE 69034136T2 DE 69034136 T DE69034136 T DE 69034136T DE 69034136 T DE69034136 T DE 69034136T DE 69034136 T2 DE69034136 T2 DE 69034136T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor layer
- semiconductor
- region
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000002800 charge carrier Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 230
- 230000014509 gene expression Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010276 construction Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22626289 | 1989-08-31 | ||
| JP22626289 | 1989-08-31 | ||
| PCT/JP1990/001091 WO1991003842A1 (fr) | 1989-08-31 | 1990-08-29 | Transistor bipolaire a grille isolee |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69034136D1 DE69034136D1 (de) | 2004-06-03 |
| DE69034136T2 true DE69034136T2 (de) | 2005-01-20 |
Family
ID=16842446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69034136T Expired - Lifetime DE69034136T2 (de) | 1989-08-31 | 1990-08-29 | Bipolarer transistor mit isolierter steuerelektrode |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5519245A (fr) |
| EP (1) | EP0450082B1 (fr) |
| DE (1) | DE69034136T2 (fr) |
| WO (1) | WO1991003842A1 (fr) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2858404B2 (ja) * | 1990-06-08 | 1999-02-17 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
| JP2862027B2 (ja) * | 1991-03-12 | 1999-02-24 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
| US5475243A (en) * | 1991-07-02 | 1995-12-12 | Fuji Electric Co., Ltd. | Semiconductor device including an IGBT and a current-regenerative diode |
| JP3081739B2 (ja) * | 1992-10-20 | 2000-08-28 | 三菱電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| US5719412A (en) * | 1993-04-02 | 1998-02-17 | Nippondenso Co., Ltd | Insulated gate bipolar transistor |
| CN1035294C (zh) * | 1993-10-29 | 1997-06-25 | 电子科技大学 | 具有异形掺杂岛的半导体器件耐压层 |
| US5723882A (en) * | 1994-03-10 | 1998-03-03 | Nippondenso Co., Ltd. | Insulated gate field effect transistor having guard ring regions |
| JP3355851B2 (ja) * | 1995-03-07 | 2002-12-09 | 株式会社デンソー | 絶縁ゲート型電界効果トランジスタ及びその製造方法 |
| JP3918209B2 (ja) | 1996-09-11 | 2007-05-23 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ及びその製造方法 |
| EP0845813A1 (fr) | 1996-12-02 | 1998-06-03 | Zetex Plc | Transistor bipolaire à grille isolée |
| US6081009A (en) * | 1997-11-10 | 2000-06-27 | Intersil Corporation | High voltage mosfet structure |
| DE19823170A1 (de) * | 1998-05-23 | 1999-11-25 | Asea Brown Boveri | Bipolartransistor mit isolierter Gateelektrode |
| US6576936B1 (en) | 1998-02-27 | 2003-06-10 | Abb (Schweiz) Ag | Bipolar transistor with an insulated gate electrode |
| EP1022785B1 (fr) * | 1999-01-25 | 2006-04-05 | STMicroelectronics S.r.l. | Dispositif electronique semi-conducteur de puissance avec diode intègrèe |
| US6461918B1 (en) | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| US7745289B2 (en) * | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
| US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
| US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| US6818513B2 (en) * | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
| FI120310B (fi) * | 2001-02-13 | 2009-09-15 | Valtion Teknillinen | Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä |
| DE10147307A1 (de) * | 2001-09-26 | 2003-04-24 | Infineon Technologies Ag | IGBT mit integriertem Freilaufelement |
| US7061066B2 (en) * | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| KR100859701B1 (ko) | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
| US7033891B2 (en) * | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
| US7482669B2 (en) * | 2003-02-18 | 2009-01-27 | Nxp B.V. | Semiconductor device and method of manufacturing such a device |
| US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| KR100994719B1 (ko) * | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7265415B2 (en) | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| DE112006000832B4 (de) | 2005-04-06 | 2018-09-27 | Fairchild Semiconductor Corporation | Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben |
| US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US7944018B2 (en) * | 2006-08-14 | 2011-05-17 | Icemos Technology Ltd. | Semiconductor devices with sealed, unlined trenches and methods of forming same |
| US8580651B2 (en) * | 2007-04-23 | 2013-11-12 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
| US7723172B2 (en) * | 2007-04-23 | 2010-05-25 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
| US20080272429A1 (en) * | 2007-05-04 | 2008-11-06 | Icemos Technology Corporation | Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices |
| CN101868856B (zh) | 2007-09-21 | 2014-03-12 | 飞兆半导体公司 | 用于功率器件的超结结构及制造方法 |
| US8012806B2 (en) | 2007-09-28 | 2011-09-06 | Icemos Technology Ltd. | Multi-directional trenching of a die in manufacturing superjunction devices |
| JP5332175B2 (ja) | 2007-10-24 | 2013-11-06 | 富士電機株式会社 | 制御回路を備える半導体装置 |
| US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
| US7846821B2 (en) * | 2008-02-13 | 2010-12-07 | Icemos Technology Ltd. | Multi-angle rotation for ion implantation of trenches in superjunction devices |
| US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
| US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8432000B2 (en) | 2010-06-18 | 2013-04-30 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
| US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8946814B2 (en) | 2012-04-05 | 2015-02-03 | Icemos Technology Ltd. | Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates |
| GB2586599A (en) * | 2019-08-27 | 2021-03-03 | Mqsemi Ag | Electrically shorted PN junctions and functional semiconductor designs for the same |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4003072A (en) * | 1972-04-20 | 1977-01-11 | Sony Corporation | Semiconductor device with high voltage breakdown resistance |
| JPS5936430B2 (ja) * | 1980-01-17 | 1984-09-04 | 株式会社東芝 | 半導体装置 |
| JPS5940576A (ja) * | 1982-08-30 | 1984-03-06 | Junichi Nishizawa | フオトサイリスタ |
| JPS6115370A (ja) * | 1984-06-30 | 1986-01-23 | Toshiba Corp | 半導体装置 |
| GB2150753B (en) * | 1983-11-30 | 1987-04-01 | Toshiba Kk | Semiconductor device |
| JPS60142559A (ja) * | 1983-12-29 | 1985-07-27 | Fujitsu Ltd | プログラマブル・リ−ド・オンリ・メモリ |
| JPH0779159B2 (ja) * | 1984-03-22 | 1995-08-23 | 潤一 西澤 | 光トリガ・光クエンチ可能なサイリスタ装置 |
| JPS61158177A (ja) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | 半導体装置 |
| JPS61185971A (ja) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | 伝導度変調型半導体装置 |
| GB2171555A (en) * | 1985-02-20 | 1986-08-28 | Philips Electronic Associated | Bipolar semiconductor device with implanted recombination region |
| JPS61208268A (ja) * | 1985-03-13 | 1986-09-16 | Toshiba Corp | 伝導度変調型半導体装置 |
| JPS61216363A (ja) * | 1985-03-22 | 1986-09-26 | Toshiba Corp | 伝導度変調型半導体装置 |
| JPH0783115B2 (ja) * | 1986-03-20 | 1995-09-06 | 松下電子工業株式会社 | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS62174971A (ja) * | 1986-06-26 | 1987-07-31 | Semiconductor Res Found | 静電誘導サイリスタ |
| JPS6318675A (ja) * | 1986-07-11 | 1988-01-26 | Toshiba Corp | 半導体装置 |
| JPH067592B2 (ja) * | 1986-07-14 | 1994-01-26 | 株式会社日立製作所 | ゲ−トタ−ンオフサイリスタ |
| JPS6381861A (ja) * | 1986-09-25 | 1988-04-12 | Mitsubishi Electric Corp | 伝導度変調形ｍｏｓｆｅｔ |
| JPS6384066A (ja) * | 1986-09-26 | 1988-04-14 | Semiconductor Res Found | 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法 |
| JP2577330B2 (ja) * | 1986-12-11 | 1997-01-29 | 新技術事業団 | 両面ゲ−ト静電誘導サイリスタの製造方法 |
| JPS63150970A (ja) * | 1986-12-15 | 1988-06-23 | Fuji Electric Co Ltd | 導電変調型絶縁ゲ−トトランジスタ |
| JPS63186475A (ja) * | 1987-01-29 | 1988-08-02 | Nissan Motor Co Ltd | 電導度変調形ｍｏｓｆｅｔ |
| US5223919A (en) * | 1987-02-25 | 1993-06-29 | U. S. Philips Corp. | Photosensitive device suitable for high voltage operation |
| US4821095A (en) * | 1987-03-12 | 1989-04-11 | General Electric Company | Insulated gate semiconductor device with extra short grid and method of fabrication |
| US4857983A (en) * | 1987-05-19 | 1989-08-15 | General Electric Company | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication |
| JPS649769A (en) * | 1987-07-03 | 1989-01-13 | Amada Co Ltd | Perforation skipping device of printing paper for line printer |
| JPH01109769A (ja) * | 1987-10-22 | 1989-04-26 | Mitsubishi Electric Corp | 半導体装置 |
| JPH01129462A (ja) * | 1987-11-16 | 1989-05-22 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
| JPH07120799B2 (ja) * | 1988-04-01 | 1995-12-20 | 株式会社日立製作所 | 半導体装置 |
| GB8901342D0 (en) * | 1989-01-21 | 1989-03-15 | Lucas Ind Plc | Semiconductor device |
-
1990
- 1990-08-29 DE DE69034136T patent/DE69034136T2/de not_active Expired - Lifetime
- 1990-08-29 EP EP90912955A patent/EP0450082B1/fr not_active Expired - Lifetime
- 1990-08-29 WO PCT/JP1990/001091 patent/WO1991003842A1/fr active IP Right Grant
-
1993
- 1993-05-05 US US08/056,946 patent/US5519245A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0450082A4 (en) | 1992-05-06 |
| DE69034136D1 (de) | 2004-06-03 |
| WO1991003842A1 (fr) | 1991-03-21 |
| US5519245A (en) | 1996-05-21 |
| EP0450082B1 (fr) | 2004-04-28 |
| EP0450082A1 (fr) | 1991-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8364 | No opposition during term of opposition |