DE60215576D1 - Wortleitungstreiber für eine Halbleiterspeicheranordnung - Google Patents

Wortleitungstreiber für eine Halbleiterspeicheranordnung

Info

Publication number
DE60215576D1
DE60215576D1 DE60215576T DE60215576T DE60215576D1 DE 60215576 D1 DE60215576 D1 DE 60215576D1 DE 60215576 T DE60215576 T DE 60215576T DE 60215576 T DE60215576 T DE 60215576T DE 60215576 D1 DE60215576 D1 DE 60215576D1
Authority
DE
Germany
Prior art keywords
memory device
word line
semiconductor memory
line driver
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215576T
Other languages
English (en)
Other versions
DE60215576T2 (de
Inventor
Jei-Hwan Yoo
Jae-Yoon Sim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60215576D1 publication Critical patent/DE60215576D1/de
Publication of DE60215576T2 publication Critical patent/DE60215576T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE60215576T 2001-05-04 2002-04-25 Wortleitungstreiber für eine Halbleiterspeicheranordnung Expired - Lifetime DE60215576T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US28874401P 2001-05-04 2001-05-04
US288744P 2001-05-04
US901785 2001-07-09
US09/901,785 US6545923B2 (en) 2001-05-04 2001-07-09 Negatively biased word line scheme for a semiconductor memory device

Publications (2)

Publication Number Publication Date
DE60215576D1 true DE60215576D1 (de) 2006-12-07
DE60215576T2 DE60215576T2 (de) 2007-08-23

Family

ID=26965206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215576T Expired - Lifetime DE60215576T2 (de) 2001-05-04 2002-04-25 Wortleitungstreiber für eine Halbleiterspeicheranordnung

Country Status (7)

Country Link
US (1) US6545923B2 (de)
EP (1) EP1255254B1 (de)
JP (1) JP4061121B2 (de)
KR (1) KR100510483B1 (de)
CN (1) CN100416702C (de)
DE (1) DE60215576T2 (de)
TW (1) TW594788B (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100510484B1 (ko) * 2002-01-24 2005-08-26 삼성전자주식회사 워드라인 방전방법 및 이를 이용하는 반도체 메모리장치
KR20030081996A (ko) * 2002-04-15 2003-10-22 삼성전자주식회사 반도체 메모리 장치 및 그 구동방법
US7366200B2 (en) * 2002-08-26 2008-04-29 Qualcomm Incorporated Beacon signaling in a wireless system
US7388845B2 (en) * 2002-08-26 2008-06-17 Qualcomm Incorporated Multiple access wireless communications system using a multisector configuration
US6809986B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. System and method for negative word line driver circuit
FR2850201A1 (fr) * 2003-01-21 2004-07-23 St Microelectronics Sa Decodeur de ligne de mot a tension negative, ayant des elements de terminaison de faible encombrement
KR100532419B1 (ko) * 2003-02-06 2005-11-30 삼성전자주식회사 네거티브 전압이 공급되는 반도체 메모리 장치의 메인워드 라인 드라이버 회로
US7046572B2 (en) * 2003-06-16 2006-05-16 International Business Machines Corporation Low power manager for standby operation of memory system
KR100610005B1 (ko) * 2003-08-25 2006-08-09 삼성전자주식회사 반도체 메모리 소자의 네거티브 전압 발생장치 및네거티브 전압 생성제어방법
CN1898744A (zh) 2003-09-05 2007-01-17 兹摩斯科技股份有限公司 低电压工作动态随机访问存储器电路
JP4962828B2 (ja) * 2004-08-25 2012-06-27 マイクロン テクノロジー， インク． ワード線ドライバ回路およびこれを利用する方法
KR100630529B1 (ko) * 2004-11-15 2006-09-29 주식회사 하이닉스반도체 반도체 메모리 장치의 워드라인 구동회로
JP5400259B2 (ja) * 2004-11-19 2014-01-29 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
EP1684303B1 (de) * 2005-01-12 2010-04-07 Infineon Technologies AG Pulsgesteuerter Wortleitungstreiber
US7551513B2 (en) * 2005-01-28 2009-06-23 Samsung Electronics Co., Ltd. Semiconductor memory device and method of controlling sub word line driver thereof
KR100666173B1 (ko) * 2005-02-04 2007-01-09 삼성전자주식회사 네가티브로 제어되는 서브 워드라인 구조의 반도체 메모리장치 및 이의 구동방법
KR100640651B1 (ko) * 2005-07-07 2006-11-01 삼성전자주식회사 워드라인 드라이버
US7256643B2 (en) * 2005-08-04 2007-08-14 Micron Technology, Inc. Device and method for generating a low-voltage reference
ITMI20051578A1 (it) * 2005-08-12 2007-02-13 St Microelectronics Srl Circuito decodificatore di riga per memorie non volatili programmabili e cancellabili elettricamente
KR100648861B1 (ko) * 2005-09-29 2006-11-24 주식회사 하이닉스반도체 워드라인 구동 장치
KR100700147B1 (ko) * 2005-12-13 2007-03-28 삼성전자주식회사 반도체 메모리 장치의 서브 워드라인 구동회로 및 서브워드라인 구동 방법
US20070233131A1 (en) * 2006-02-28 2007-10-04 Vermillion Technologies, Llc Apparatus and method of creating an intervertebral cavity with a vibrating cutter
US8351405B2 (en) * 2006-07-14 2013-01-08 Qualcomm Incorporated Method and apparatus for signaling beacons in a communication system
US8648403B2 (en) 2006-04-21 2014-02-11 International Business Machines Corporation Dynamic memory cell structures
US7755964B2 (en) * 2006-10-25 2010-07-13 Qualcomm Incorporated Memory device with configurable delay tracking
KR20080060666A (ko) * 2006-12-27 2008-07-02 삼성전자주식회사 메모리 셀 워드라인의 스트레스 시간을 줄이는 워드라인구동 방법 및 회로
KR100861209B1 (ko) * 2007-04-12 2008-09-30 주식회사 하이닉스반도체 서브 워드 라인 드라이버를 포함하는 반도체 소자
US7881126B2 (en) * 2007-05-31 2011-02-01 Marvell World Trade Ltd. Memory structure with word line buffers
KR101311713B1 (ko) * 2007-07-31 2013-09-26 삼성전자주식회사 메모리 코어, 이를 포함하는 반도체 메모리 장치
KR101096225B1 (ko) * 2008-08-21 2011-12-22 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 구동방법
US7876612B2 (en) * 2008-10-08 2011-01-25 Nanya Technology Corp. Method for reducing leakage current of a memory and related device
JP5202248B2 (ja) * 2008-11-26 2013-06-05 パナソニック株式会社 半導体記憶装置
TWI399758B (zh) * 2009-01-23 2013-06-21 Elite Semiconductor Esmt 字線解碼器電路
KR101559909B1 (ko) 2009-02-06 2015-10-15 삼성전자주식회사 워드라인 구동회로 및 그의 구동방법
KR101623080B1 (ko) * 2010-01-18 2016-05-23 삼성전자주식회사 백 바이어스 전압의 리플 노이즈를 줄이는 반도체 메모리 장치 및 그 구동 방법
US8716897B2 (en) 2011-01-31 2014-05-06 Micron Technology, Inc. Voltage generators having reduced or eliminated cross current
KR101223542B1 (ko) 2011-02-28 2013-01-21 에스케이하이닉스 주식회사 반도체 장치
JP2012190522A (ja) 2011-03-14 2012-10-04 Elpida Memory Inc 半導体装置
US8599618B2 (en) * 2011-12-02 2013-12-03 Cypress Semiconductor Corp. High voltage tolerant row driver
US9355697B2 (en) * 2011-12-28 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Wordline driver
KR101763254B1 (ko) 2012-01-27 2017-07-31 테세라, 인코포레이티드 Ｄｒａｍ 보안 소거
US8995219B2 (en) * 2012-03-28 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Word line driver
KR20150140042A (ko) * 2014-06-05 2015-12-15 에스케이하이닉스 주식회사 워드라인 드라이버 회로 및 이를 포함하는 저항변화 메모리 장치
US9373378B1 (en) 2015-03-26 2016-06-21 Elite Semiconductor Memory Technology Inc. Semiconductor device for driving sub word lines
CN104733037B (zh) * 2015-03-27 2018-10-16 西安紫光国芯半导体有限公司 一种控制位线泄放电流的装置
US11114148B1 (en) * 2020-04-16 2021-09-07 Wuxi Petabyte Technologies Co., Ltd. Efficient ferroelectric random-access memory wordline driver, decoder, and related circuits
KR20220138547A (ko) 2021-04-05 2022-10-13 삼성전자주식회사 메모리 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62266792A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 半導体記憶装置
JP3228759B2 (ja) * 1990-01-24 2001-11-12 セイコーエプソン株式会社 半導体記憶装置及びデータ処理装置
KR940002859B1 (ko) * 1991-03-14 1994-04-04 삼성전자 주식회사 반도체 메모리장치에서의 워드라인 구동회로
JP2812099B2 (ja) 1992-10-06 1998-10-15 日本電気株式会社 半導体メモリ
US5650976A (en) * 1993-05-14 1997-07-22 Micron Technology, Inc. Dual strobed negative pumped wordlines for dynamic random access memories
JP2785717B2 (ja) 1994-09-30 1998-08-13 日本電気株式会社 半導体記憶装置
JP3102302B2 (ja) 1995-06-07 2000-10-23 日本電気株式会社 半導体記憶装置
EP0750314B1 (de) * 1995-06-19 2000-01-26 STMicroelectronics S.r.l. Negative Wortleitung-Spannungsregelungschaltung für elektrisch löschbare Halbleiterspeicheranordnungen
KR0170903B1 (ko) 1995-12-08 1999-03-30 김주용 하위 워드 라인 구동 회로 및 이를 이용한 반도체 메모리 장치
KR100200724B1 (ko) * 1996-08-21 1999-06-15 윤종용 반도체 메모리장치의 서브 워드라인 드라이버
JP3093655B2 (ja) * 1996-09-27 2000-10-03 日本電気アイシーマイコンシステム株式会社 多値マスクｒｏｍのワード線駆動方法及びその駆動回路
JPH10241361A (ja) * 1997-02-25 1998-09-11 Toshiba Corp 半導体記憶装置
JP3228319B2 (ja) 1997-04-07 2001-11-12 日本電気株式会社 半導体装置
WO1998058382A1 (fr) * 1997-06-16 1998-12-23 Hitachi, Ltd. Dispositif a circuit integre transistorise
JPH11260054A (ja) 1998-01-08 1999-09-24 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
KR100564418B1 (ko) 1998-12-30 2006-06-08 주식회사 하이닉스반도체 Dram의 음전위 워드라인 전압 공급회로

Also Published As

Publication number Publication date
US20020163843A1 (en) 2002-11-07
DE60215576T2 (de) 2007-08-23
US6545923B2 (en) 2003-04-08
EP1255254A3 (de) 2004-04-28
CN100416702C (zh) 2008-09-03
JP2002352580A (ja) 2002-12-06
KR100510483B1 (ko) 2005-08-26
EP1255254A2 (de) 2002-11-06
TW594788B (en) 2004-06-21
EP1255254B1 (de) 2006-10-25
CN1392568A (zh) 2003-01-22
KR20020084893A (ko) 2002-11-13
JP4061121B2 (ja) 2008-03-12

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Legal Events

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