DE3280110D1 - Ionenstrahl-bearbeitungsapparat und methode zur korrektur von maskenfehlern. - Google Patents

Ionenstrahl-bearbeitungsapparat und methode zur korrektur von maskenfehlern.

Info

Publication number
DE3280110D1
DE3280110D1 DE8282109014T DE3280110T DE3280110D1 DE 3280110 D1 DE3280110 D1 DE 3280110D1 DE 8282109014 T DE8282109014 T DE 8282109014T DE 3280110 T DE3280110 T DE 3280110T DE 3280110 D1 DE3280110 D1 DE 3280110D1
Authority
DE
Germany
Prior art keywords
ion beam
machining apparatus
beam machining
mask errors
correcting mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8282109014T
Other languages
English (en)
Inventor
Hiroshi Yamaguchi
Tateoki Miyauchi
Akira Shimase
Mikio Hongo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15570521&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3280110(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3280110D1 publication Critical patent/DE3280110D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
DE8282109014T 1981-09-30 1982-09-29 Ionenstrahl-bearbeitungsapparat und methode zur korrektur von maskenfehlern. Expired - Lifetime DE3280110D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56153806A JPS5856332A (ja) 1981-09-30 1981-09-30 マスクの欠陥修正方法

Publications (1)

Publication Number Publication Date
DE3280110D1 true DE3280110D1 (de) 1990-03-15

Family

ID=15570521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282109014T Expired - Lifetime DE3280110D1 (de) 1981-09-30 1982-09-29 Ionenstrahl-bearbeitungsapparat und methode zur korrektur von maskenfehlern.

Country Status (4)

Country Link
US (1) US4503329A (de)
EP (1) EP0075949B1 (de)
JP (1) JPS5856332A (de)
DE (1) DE3280110D1 (de)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208830A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd イオンビ−ム加工方法およびその装置
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
JPS6094728A (ja) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd 荷電粒子ビームを用いた加工方法およびその装置
JPS60182726A (ja) * 1984-02-29 1985-09-18 Seiko Instr & Electronics Ltd パタ−ン膜形成方法
HU190959B (en) * 1984-04-20 1986-12-28 Gyulai,Jozsef,Hu Method and apparatus for the irradiation of solid materials with ions
JPS60243960A (ja) * 1984-05-18 1985-12-03 Hitachi Ltd イオンマイクロビ−ム装置
JPS60249318A (ja) * 1984-05-25 1985-12-10 Hitachi Ltd イオンマイクロビ−ム注入法
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
JPH0616391B2 (ja) * 1984-07-13 1994-03-02 株式会社日立製作所 イオンビーム照射装置
JPS6180744A (ja) * 1984-09-27 1986-04-24 Hitachi Ltd イオンマイクロビ−ム装置
JPS6312348Y2 (de) * 1984-10-03 1988-04-08
JPS6312347Y2 (de) * 1984-10-03 1988-04-08
JPS6312346Y2 (de) * 1984-10-03 1988-04-08
JPS6186753A (ja) * 1984-10-03 1986-05-02 Seiko Instr & Electronics Ltd マスク欠陥修正終了検出方法
JPS6188261A (ja) * 1984-10-08 1986-05-06 Seiko Instr & Electronics Ltd イオンビ−ムによるマスクリペア−装置
JPS6190161A (ja) * 1984-10-09 1986-05-08 Seiko Instr & Electronics Ltd 集束イオンビ−ムのビ−ム形状調整方法
EP0198907A1 (de) * 1984-10-26 1986-10-29 Ion Beam Systems, Inc. Fokussierte alternierung eines substrats
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration
US4732454A (en) * 1985-04-22 1988-03-22 Toray Industries, Inc. Light-transmissible plate shielding electromagnetic waves
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
JPS6272123A (ja) * 1985-09-25 1987-04-02 Mitsubishi Electric Corp パタ−ン欠陥検査修正方法
JPS62195662A (ja) * 1986-02-24 1987-08-28 Seiko Instr & Electronics Ltd マスクリペア方法及び装置
US4825080A (en) * 1986-03-25 1989-04-25 Universite De Reims Champagne-Ardenne Electrical particle gun
JPS62223756A (ja) * 1986-03-26 1987-10-01 Seiko Instr & Electronics Ltd イオンビ−ム加工装置
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
JPS62260335A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd パタ−ン検査方法および装置
NL8602176A (nl) * 1986-08-27 1988-03-16 Philips Nv Ionen bundel apparaat voor nabewerking van patronen.
US5165954A (en) * 1986-09-02 1992-11-24 Microbeam, Inc. Method for repairing semiconductor masks & reticles
JPS6386340A (ja) * 1986-09-30 1988-04-16 Fujitsu Ltd 一次粒子線照射装置
JPH0661001B2 (ja) * 1987-10-23 1994-08-10 セイコー電子工業株式会社 マスクの欠陥修正装置
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
JPS63198348A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 膨れ層膜の膜種判定方法
DE3705361A1 (de) * 1987-02-17 1988-08-25 Fraunhofer Ges Forschung Einrichtung zur zerstoerungsfreien bilderzeugung und ortsselektiven oberflaechenbearbeitung in fokussierten ionenstrahlsystemen
JPH0622195B2 (ja) * 1987-02-26 1994-03-23 東芝機械株式会社 荷電ビ−ム描画装置
JPS63210845A (ja) * 1987-02-27 1988-09-01 Hitachi Ltd 欠陥修正方法
US4886971A (en) * 1987-03-13 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Ion beam irradiating apparatus including ion neutralizer
WO1988009049A1 (en) * 1987-05-11 1988-11-17 Microbeam Inc. Mask repair using an optimized focused ion beam system
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
JP2569057B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 Ｘ線マスクの欠陥修正方法
AT392857B (de) * 1987-07-13 1991-06-25 Ims Ionen Mikrofab Syst Vorrichtung und verfahren zur inspektion einer maske
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
EP0304525A1 (de) * 1987-08-28 1989-03-01 FISONS plc Gepulste mikrofokussierte Ionenstrahlen
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH01154064A (ja) * 1987-12-10 1989-06-16 Fujitsu Ltd 微細パターンの形成方法
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
DD298750A5 (de) * 1990-04-09 1992-03-12 Veb Carl Zeiss Jena,De Verfahren zur steuerung der ionenstrahlbearbeitung von festkoerperoberflaechen
JP2886649B2 (ja) * 1990-09-27 1999-04-26 株式会社日立製作所 イオンビーム加工方法及びその装置
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5439763A (en) * 1991-03-19 1995-08-08 Hitachi, Ltd. Optical mask and method of correcting the same
JP2540854Y2 (ja) * 1991-04-09 1997-07-09 株式会社国盛化学 電動調理装置
US5155368A (en) * 1991-04-16 1992-10-13 Micrion Corporation Ion beam blanking apparatus and method
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JPH0771754B2 (ja) * 1992-09-11 1995-08-02 株式会社日立製作所 イオンビーム加工方法
US5357116A (en) * 1992-11-23 1994-10-18 Schlumberger Technologies, Inc. Focused ion beam processing with charge control
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
JP3041174B2 (ja) * 1993-10-28 2000-05-15 株式会社東芝 電子線描画装置のパターン修正装置におけるパターン修正方法
US5458731A (en) * 1994-02-04 1995-10-17 Fujitsu Limited Method for fast and non-destructive examination of etched features
US5770123A (en) * 1994-09-22 1998-06-23 Ebara Corporation Method and apparatus for energy beam machining
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置
JP3544438B2 (ja) * 1996-09-30 2004-07-21 セイコーインスツルメンツ株式会社 イオンビームによる加工装置
SG52858A1 (en) * 1996-11-07 1998-09-28 Univ Singapore Micromachining using high energy light ions
US5940678A (en) * 1997-01-14 1999-08-17 United Microelectronics Corp. Method of forming precisely cross-sectioned electron-transparent samples
US6074571A (en) * 1997-09-30 2000-06-13 International Business Machines Corporation Cut and blast defect to avoid chrome roll over annealing
JP3489989B2 (ja) * 1998-04-06 2004-01-26 セイコーインスツルメンツ株式会社 パターン膜形成方法及びそれに用いる集束イオンビーム加工装置
US6486480B1 (en) * 1998-04-10 2002-11-26 The Regents Of The University Of California Plasma formed ion beam projection lithography system
US6544692B1 (en) * 1999-04-20 2003-04-08 Seiko Instruments Inc. Black defect correction method and black defect correction device for photomask
US7235800B1 (en) * 2000-05-31 2007-06-26 Advanced Micro Devices, Inc. Electrical probing of SOI circuits
WO2002003142A2 (en) * 2000-06-30 2002-01-10 President And Fellows Of Harvard College Electric microcontact printing method and apparatus
JP3597761B2 (ja) * 2000-07-18 2004-12-08 株式会社日立製作所 イオンビーム装置及び試料加工方法
US7084399B2 (en) * 2000-07-18 2006-08-01 Hitachi, Ltd. Ion beam apparatus and sample processing method
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
FR2823005B1 (fr) * 2001-03-28 2003-05-16 Centre Nat Rech Scient Dispositif de generation d'un faisceau d'ions et procede de reglage de ce faisceau
US6458634B1 (en) 2001-04-18 2002-10-01 International Business Machines Corporation Reduction of induced charge in SOI devices during focused ion beam processing
US20030157269A1 (en) * 2002-02-20 2003-08-21 University Of Washington Method and apparatus for precision coating of molecules on the surfaces of materials and devices
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
JP4913599B2 (ja) * 2003-10-17 2012-04-11 エフ・イ−・アイ・カンパニー 帯電粒子抽出デバイスおよびその設計方法
US7015146B2 (en) * 2004-01-06 2006-03-21 International Business Machines Corporation Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasma
US7241361B2 (en) 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
ATE416878T1 (de) * 2004-08-06 2008-12-15 Trumpf Werkzeugmaschinen Gmbh Laserbearbeitungskopf
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
EP1826809A1 (de) * 2006-02-22 2007-08-29 FEI Company Partikel-Optisches Gerät ausgestattet mit einer Gasionenquelle
FI122010B (fi) * 2006-08-09 2011-07-15 Konstantin Arutyunov Ionisuihkuetsausmenetelmä ja -laitteisto
EP2056333B1 (de) 2007-10-29 2016-08-24 ION-TOF Technologies GmbH Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
EP2341525B1 (de) 2009-12-30 2013-10-23 FEI Company Plasmaquelle für ein Teilchenstrahlsystem
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP5898454B2 (ja) 2011-10-20 2016-04-06 株式会社日立ハイテクサイエンス 集束イオンビーム装置
KR102108358B1 (ko) * 2013-08-28 2020-05-11 삼성디스플레이 주식회사 유기 발광 표시 장치 리페어 방법
CN104091748B (zh) * 2014-07-09 2016-08-17 中国计量科学研究院 电离室调节装置
US9941094B1 (en) 2017-02-01 2018-04-10 Fei Company Innovative source assembly for ion beam production

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces
JPS5221909B2 (de) * 1972-03-17 1977-06-14
JPS532599B2 (de) * 1972-10-30 1978-01-30
US4085330A (en) * 1976-07-08 1978-04-18 Burroughs Corporation Focused ion beam mask maker
US4063091A (en) * 1976-10-18 1977-12-13 American Optical Corporation High speed switching circuit
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
US4361762A (en) * 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter

Also Published As

Publication number Publication date
EP0075949B1 (de) 1990-02-07
EP0075949A2 (de) 1983-04-06
JPS5856332A (ja) 1983-04-04
JPH0425531B2 (de) 1992-05-01
US4503329A (en) 1985-03-05
EP0075949A3 (en) 1986-02-05

Similar Documents

Publication Publication Date Title
DE3280110D1 (de) Ionenstrahl-bearbeitungsapparat und methode zur korrektur von maskenfehlern.
DE3669234D1 (de) Methode und geraet zur ionenstrahlbearbeitung.
DE3483552D1 (de) System und methode zur ionenimplantation.
DE3483375D1 (de) Verfahren und system zur fehlerkorrektur.
DE3582617D1 (de) Geraet zur ionenstrahlbearbeitung.
FR2547111B1 (fr) Procede de correction de masques lithographiques
ATE32304T1 (de) Verfahren zur zerlegung von blutplasma.
DE3576088D1 (de) Verfahren zur reparatur von transmissionsmasken.
DE3381940D1 (de) Verfahren zur metallbehandlung.
DE3585389D1 (de) Verfahren zur sterilisation durch bestrahlung mit einem elektronenstrahl.
IT1194806B (it) Metodo per la correzione di errori
DE3686540T2 (de) Verfahren zur kode-fehlerkorrektur.
DE3382515D1 (de) Verfahren und geraet zur bahnsteuerung.
IT8323474A0 (it) Metodo ed apparecchio per la correzione di errori di sintassi.
DE3884688T2 (de) Verfahren und Vorrichtung für die Korrektur von Fehlern in Röntgenstrahlmasken.
DE3685774T2 (de) Verfahren zur behandlung farbphotographischer silberhalogenidmaterialien.
DE3483157D1 (de) Verfahren zur maskenlosen ionenimplantation.
DE3687398T2 (de) Verfahren zur behandlung farbphotographischer silberhalogenidmaterialien.
DE3576003D1 (de) Anodisches verklebungsverfahren und vorrichtung fuer roentgenstrahlmasken.
EP0049153A3 (en) Method and apparatus for correcting positional error, for example in numerical control devices
DK163483A (da) Fremgangsmaade og apparat til fremstilling af steriliserede papbeholdere
DK157607C (da) Fremgangsmaade og apparat til ionbytning
DK206584A (da) Fremgangsmaade og middel til behandling af pruritus
DE3381033D1 (de) Elektronenstrahl-belichtungsverfahren.
DE3780018T2 (de) Methode zum scheiden und ueberfuehren eines ionenaustauscherharzes.

Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings