DE3582617D1 - Geraet zur ionenstrahlbearbeitung. - Google Patents

Geraet zur ionenstrahlbearbeitung.

Info

Publication number
DE3582617D1
DE3582617D1 DE8585108708T DE3582617T DE3582617D1 DE 3582617 D1 DE3582617 D1 DE 3582617D1 DE 8585108708 T DE8585108708 T DE 8585108708T DE 3582617 T DE3582617 T DE 3582617T DE 3582617 D1 DE3582617 D1 DE 3582617D1
Authority
DE
Germany
Prior art keywords
ion beam
beam processing
processing
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585108708T
Other languages
English (en)
Inventor
Akira Shimase
Hiroshi Yamaguchi
Satoshi Haraichi
Tateoki Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3582617D1 publication Critical patent/DE3582617D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE8585108708T 1984-07-13 1985-07-12 Geraet zur ionenstrahlbearbeitung. Expired - Lifetime DE3582617D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59144478A JPH0616391B2 (ja) 1984-07-13 1984-07-13 イオンビーム照射装置

Publications (1)

Publication Number Publication Date
DE3582617D1 true DE3582617D1 (de) 1991-05-29

Family

ID=15363237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585108708T Expired - Lifetime DE3582617D1 (de) 1984-07-13 1985-07-12 Geraet zur ionenstrahlbearbeitung.

Country Status (4)

Country Link
US (1) US4683378A (de)
EP (1) EP0168056B1 (de)
JP (1) JPH0616391B2 (de)
DE (1) DE3582617D1 (de)

Families Citing this family (40)

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Publication number Priority date Publication date Assignee Title
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
DE3636506A1 (de) * 1986-10-27 1988-04-28 Atomika Tech Physik Gmbh Spiralabtastverfahren
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4849641A (en) * 1987-06-22 1989-07-18 Berkowitz Edward H Real time non-destructive dose monitor
JP2569057B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 Ｘ線マスクの欠陥修正方法
AT392857B (de) * 1987-07-13 1991-06-25 Ims Ionen Mikrofab Syst Vorrichtung und verfahren zur inspektion einer maske
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JP2811073B2 (ja) * 1988-11-01 1998-10-15 セイコーインスツルメンツ株式会社 断面加工観察装置
JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
US5089774A (en) * 1989-12-26 1992-02-18 Sharp Kabushiki Kaisha Apparatus and a method for checking a semiconductor
JP2886649B2 (ja) * 1990-09-27 1999-04-26 株式会社日立製作所 イオンビーム加工方法及びその装置
JPH04141937A (ja) * 1990-10-01 1992-05-15 Sharp Corp 半導体素子解析装置
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
JPH05235135A (ja) * 1992-02-18 1993-09-10 Nec Corp 金属結晶粒の連続的移動の観察方法
JP3373585B2 (ja) * 1993-04-07 2003-02-04 株式会社日立製作所 走査型プローブ加工観察装置
US5401972A (en) * 1993-09-02 1995-03-28 Schlumberger Technologies, Inc. Layout overlay for FIB operations
JP3041174B2 (ja) * 1993-10-28 2000-05-15 株式会社東芝 電子線描画装置のパターン修正装置におけるパターン修正方法
US5541411A (en) * 1995-07-06 1996-07-30 Fei Company Image-to-image registration focused ion beam system
US6215892B1 (en) * 1995-11-30 2001-04-10 Chromavision Medical Systems, Inc. Method and apparatus for automated image analysis of biological specimens
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US5905266A (en) * 1996-12-19 1999-05-18 Schlumberger Technologies, Inc. Charged particle beam system with optical microscope
US5821549A (en) 1997-03-03 1998-10-13 Schlumberger Technologies, Inc. Through-the-substrate investigation of flip-chip IC's
WO1999009581A1 (en) 1997-08-13 1999-02-25 Varian Semiconductor Equipment Associates, Inc. Scanning system with linear gas bearings and active counter-balance options
US6061115A (en) * 1998-11-03 2000-05-09 International Business Machines Incorporation Method of producing a multi-domain alignment layer by bombarding ions of normal incidence
US6519018B1 (en) 1998-11-03 2003-02-11 International Business Machines Corporation Vertically aligned liquid crystal displays and methods for their production
US6313896B1 (en) 1999-08-31 2001-11-06 International Business Machines Corporation Method for forming a multi-domain alignment layer for a liquid crystal display device
US7084399B2 (en) * 2000-07-18 2006-08-01 Hitachi, Ltd. Ion beam apparatus and sample processing method
JP3984019B2 (ja) * 2001-10-15 2007-09-26 パイオニア株式会社 電子ビーム装置及び電子ビーム調整方法
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
DE102008045336B4 (de) * 2008-09-01 2022-05-25 Carl Zeiss Microscopy Gmbh System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl
US8781219B2 (en) 2008-10-12 2014-07-15 Fei Company High accuracy beam placement for local area navigation
JP5805536B2 (ja) 2008-10-12 2015-11-04 エフ・イ−・アイ・カンパニー 局所領域ナビゲーション用の高精度ビーム配置
JP5690086B2 (ja) * 2010-07-02 2015-03-25 株式会社キーエンス 拡大観察装置
JP5922125B2 (ja) 2010-08-31 2016-05-24 エフ・イ−・アイ・カンパニー 低質量種と高質量種の両方を含むイオン源を使用した誘導および試料処理
KR101611546B1 (ko) * 2011-07-11 2016-04-12 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템 및 타겟의 위치 데이터를 저장하는 방법
WO2018146804A1 (ja) * 2017-02-13 2018-08-16 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
US10665421B2 (en) * 2018-10-10 2020-05-26 Applied Materials, Inc. In-situ beam profile metrology

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648048A (en) * 1969-10-15 1972-03-07 Thomson Houston Comp Francaise System and method for positioning a wafer coated with photoresist and for controlling the displacements of said wafer in a scanning electron apparatus
DE2529735C3 (de) * 1975-07-01 1978-06-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Korpuskularstrahlmikroskop, insbe- · sondere Elektronenmikroskop, mit Verstelleinrichtungen zur Änderung der Lage des abzubildenden Objekts und Verfahren zum Betrieb
JPS5795056A (en) * 1980-12-05 1982-06-12 Hitachi Ltd Appearance inspecting process
JPS57205954A (en) * 1981-06-10 1982-12-17 Jeol Ltd Scanning color electro microscope
JPS5846564A (ja) * 1981-09-14 1983-03-18 Seiko Instr & Electronics Ltd エネルギ−分散型ｘ線分析装置
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58196020A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd マスクの欠陥検査・修正方法およびその装置
JPS5917332A (ja) * 1982-07-21 1984-01-28 株式会社日立製作所 医用画像重ね合わせ方式

Also Published As

Publication number Publication date
US4683378A (en) 1987-07-28
JPH0616391B2 (ja) 1994-03-02
EP0168056A2 (de) 1986-01-15
EP0168056A3 (en) 1987-04-29
EP0168056B1 (de) 1991-04-24
JPS6124136A (ja) 1986-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee