DE3381033D1 - Elektronenstrahl-belichtungsverfahren. - Google Patents
Elektronenstrahl-belichtungsverfahren.Info
- Publication number
- DE3381033D1 DE3381033D1 DE8383106013T DE3381033T DE3381033D1 DE 3381033 D1 DE3381033 D1 DE 3381033D1 DE 8383106013 T DE8383106013 T DE 8383106013T DE 3381033 T DE3381033 T DE 3381033T DE 3381033 D1 DE3381033 D1 DE 3381033D1
- Authority
- DE
- Germany
- Prior art keywords
- electron beam
- exposure method
- beam exposure
- electron
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
- H01J2237/31771—Proximity effect correction using multiple exposure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57112986A JPS594017A (ja) | 1982-06-30 | 1982-06-30 | 電子ビ−ム露光方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3381033D1 true DE3381033D1 (de) | 1990-02-01 |
Family
ID=14600546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383106013T Expired - Lifetime DE3381033D1 (de) | 1982-06-30 | 1983-06-20 | Elektronenstrahl-belichtungsverfahren. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4644170A (de) |
EP (1) | EP0097903B1 (de) |
JP (1) | JPS594017A (de) |
DE (1) | DE3381033D1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4712013A (en) * | 1984-09-29 | 1987-12-08 | Kabushiki Kaisha Toshiba | Method of forming a fine pattern with a charged particle beam |
JPS6229135A (ja) * | 1985-07-29 | 1987-02-07 | Advantest Corp | 荷電粒子ビ−ム露光方法及びこの方法を用いた荷電粒子ビ−ム露光装置 |
JPH0645021Y2 (ja) * | 1989-03-10 | 1994-11-16 | サンウエーブ工業株式会社 | ヒンジ装置 |
US5051598A (en) * | 1990-09-12 | 1991-09-24 | International Business Machines Corporation | Method for correcting proximity effects in electron beam lithography |
US6534242B2 (en) | 1997-11-06 | 2003-03-18 | Canon Kabushiki Kaisha | Multiple exposure device formation |
US6377337B1 (en) | 1998-05-02 | 2002-04-23 | Canon Kabushiki Kaisha | Projection exposure apparatus |
JP3352405B2 (ja) | 1998-09-10 | 2002-12-03 | キヤノン株式会社 | 露光方法及びそれを用いたデバイス製造方法並びに半導体デバイス |
JP2001126980A (ja) * | 1999-11-01 | 2001-05-11 | Nikon Corp | 蓄積エネルギー計算方法、プログラム記憶媒体、近接効果計算方法、マスク又はレチクルパターンの設計方法、及び半導体デバイスの製造方法 |
JP2003142500A (ja) * | 2001-10-30 | 2003-05-16 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4291037B2 (ja) | 2003-05-07 | 2009-07-08 | スガツネ工業株式会社 | スライドヒンジ |
US8539392B2 (en) | 2011-02-24 | 2013-09-17 | National Taiwan University | Method for compensating proximity effects of particle beam lithography processes |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2143737A1 (de) * | 1971-09-01 | 1973-03-08 | Ibm Deutschland | Photoaetzverfahren |
JPS51147262A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Electronic beam exposure method |
US4099062A (en) * | 1976-12-27 | 1978-07-04 | International Business Machines Corporation | Electron beam lithography process |
DE2852961A1 (de) * | 1978-12-07 | 1980-06-19 | Siemens Ag | Verfahren zum aufbringen sehr feiner strukturen auf ein substrat |
JPS5596942A (en) * | 1979-01-19 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method and apparatus for producing minute pattern |
DE2927242A1 (de) * | 1979-07-05 | 1981-01-08 | Siemens Ag | Korpuskel- oder roentgenlithografisches verfahren zur strukturerzeugung |
JPS56112729A (en) * | 1980-02-08 | 1981-09-05 | Fujitsu Ltd | Exposure of electron beam |
-
1982
- 1982-06-30 JP JP57112986A patent/JPS594017A/ja active Pending
-
1983
- 1983-06-20 EP EP83106013A patent/EP0097903B1/de not_active Expired
- 1983-06-20 DE DE8383106013T patent/DE3381033D1/de not_active Expired - Lifetime
-
1985
- 1985-12-20 US US06/810,848 patent/US4644170A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0097903B1 (de) | 1989-12-27 |
US4644170A (en) | 1987-02-17 |
EP0097903A2 (de) | 1984-01-11 |
EP0097903A3 (en) | 1985-10-23 |
JPS594017A (ja) | 1984-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |