DE3483157D1 - Verfahren zur maskenlosen ionenimplantation. - Google Patents

Verfahren zur maskenlosen ionenimplantation.

Info

Publication number
DE3483157D1
DE3483157D1 DE8484116489T DE3483157T DE3483157D1 DE 3483157 D1 DE3483157 D1 DE 3483157D1 DE 8484116489 T DE8484116489 T DE 8484116489T DE 3483157 T DE3483157 T DE 3483157T DE 3483157 D1 DE3483157 D1 DE 3483157D1
Authority
DE
Germany
Prior art keywords
ion implantation
maskless ion
maskless
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484116489T
Other languages
English (en)
Inventor
Shigeru Okamura
Takao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3483157D1 publication Critical patent/DE3483157D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
DE8484116489T 1983-12-29 1984-12-28 Verfahren zur maskenlosen ionenimplantation. Expired - Fee Related DE3483157D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58251453A JPS60143630A (ja) 1983-12-29 1983-12-29 イオン注入方法

Publications (1)

Publication Number Publication Date
DE3483157D1 true DE3483157D1 (de) 1990-10-11

Family

ID=17223048

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484116489T Expired - Fee Related DE3483157D1 (de) 1983-12-29 1984-12-28 Verfahren zur maskenlosen ionenimplantation.

Country Status (5)

Country Link
US (1) US4641034A (de)
EP (1) EP0151811B1 (de)
JP (1) JPS60143630A (de)
KR (1) KR890003497B1 (de)
DE (1) DE3483157D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180744A (ja) * 1984-09-27 1986-04-24 Hitachi Ltd イオンマイクロビ−ム装置
JP2537492B2 (ja) * 1986-06-05 1996-09-25 東京エレクトロン 株式会社 イオン注入装置
US4835399A (en) * 1986-08-22 1989-05-30 Hitachi, Ltd. Charged particle beam apparatus
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
NL8820330A (nl) * 1987-05-11 1989-04-03 Microbeam Inc Maskerreparatie, gebruik makend van een geoptimaliseerd gefocusseerd ionenbundelsysteem.
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
US4967380A (en) * 1987-09-16 1990-10-30 Varian Associates, Inc. Dual channel signal processor using weighted integration of log-ratios and ion beam position sensor utilizing the signal processor
US4929839A (en) * 1988-10-11 1990-05-29 Microbeam Inc. Focused ion beam column
US4976843A (en) * 1990-02-02 1990-12-11 Micrion Corporation Particle beam shielding
US5401963A (en) * 1993-11-01 1995-03-28 Rosemount Analytical Inc. Micromachined mass spectrometer
US5449916A (en) * 1994-09-09 1995-09-12 Atomic Energy Of Canada Limited Electron radiation dose tailoring by variable beam pulse generation
JP2004504691A (ja) * 2000-07-14 2004-02-12 エピオン　コーポレイション Ｇｃｉｂサイズ診断および加工品処理
DE10057656C1 (de) * 2000-11-21 2002-04-04 Rossendorf Forschzent Verfahren zur Herstellung von integrierten Abtastnadeln
US6646277B2 (en) * 2000-12-26 2003-11-11 Epion Corporation Charging control and dosimetry system for gas cluster ion beam
DE60118070T2 (de) * 2001-09-04 2006-08-17 Advantest Corp. Partikelstrahlgerät
US7061591B2 (en) * 2003-05-30 2006-06-13 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
US8278220B2 (en) * 2008-08-08 2012-10-02 Fei Company Method to direct pattern metals on a substrate
US20120213319A1 (en) * 2009-08-14 2012-08-23 The Regents Of The University Of California Fast Pulsed Neutron Generator

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
JPS56126918A (en) * 1980-03-11 1981-10-05 Hitachi Ltd Injecting device for ion
JPS5727026A (en) * 1980-07-25 1982-02-13 Hitachi Ltd Ion implantation
JPS57132660A (en) * 1981-02-09 1982-08-17 Fujitsu Ltd Method of ion implantation
US4433247A (en) * 1981-09-28 1984-02-21 Varian Associates, Inc. Beam sharing method and apparatus for ion implantation
JPS5894746A (ja) * 1981-11-30 1983-06-06 Nec Corp イオンビ−ム静電走査装置
JPS58106823A (ja) * 1981-12-18 1983-06-25 Toshiba Corp イオン注入方法
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
US4421988A (en) * 1982-02-18 1983-12-20 Varian Associates, Inc. Beam scanning method and apparatus for ion implantation
US4517465A (en) * 1983-03-29 1985-05-14 Veeco/Ai, Inc. Ion implantation control system

Also Published As

Publication number Publication date
KR890003497B1 (ko) 1989-09-22
EP0151811A2 (de) 1985-08-21
KR850005149A (ko) 1985-08-21
EP0151811A3 (en) 1986-12-30
JPS60143630A (ja) 1985-07-29
JPH0213458B2 (de) 1990-04-04
US4641034A (en) 1987-02-03
EP0151811B1 (de) 1990-09-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee