DE3483862D1 - Mikrolithographisches verfahren. - Google Patents

Mikrolithographisches verfahren.

Info

Publication number
DE3483862D1
DE3483862D1 DE8484108095T DE3483862T DE3483862D1 DE 3483862 D1 DE3483862 D1 DE 3483862D1 DE 8484108095 T DE8484108095 T DE 8484108095T DE 3483862 T DE3483862 T DE 3483862T DE 3483862 D1 DE3483862 D1 DE 3483862D1
Authority
DE
Germany
Prior art keywords
microlithographic method
microlithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484108095T
Other languages
English (en)
Inventor
Hiroyuki Hiraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3483862D1 publication Critical patent/DE3483862D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymerisation Methods In General (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
DE8484108095T 1983-09-06 1984-07-11 Mikrolithographisches verfahren. Expired - Fee Related DE3483862D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/529,458 US4460436A (en) 1983-09-06 1983-09-06 Deposition of polymer films by means of ion beams

Publications (1)

Publication Number Publication Date
DE3483862D1 true DE3483862D1 (de) 1991-02-07

Family

ID=24110001

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484108095T Expired - Fee Related DE3483862D1 (de) 1983-09-06 1984-07-11 Mikrolithographisches verfahren.

Country Status (4)

Country Link
US (1) US4460436A (de)
EP (1) EP0136421B1 (de)
JP (1) JPS6062123A (de)
DE (1) DE3483862D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182726A (ja) * 1984-02-29 1985-09-18 Seiko Instr & Electronics Ltd パタ−ン膜形成方法
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
US4601913A (en) * 1984-06-27 1986-07-22 International Business Machines Corporation Underlay surface modification to control resin glass polymerization
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration
US4551418A (en) * 1985-02-19 1985-11-05 International Business Machines Corporation Process for preparing negative relief images with cationic photopolymerization
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
EP0233747B1 (de) * 1986-02-10 1992-12-02 LOCTITE (IRELAND) Ltd. Im Vakuum aufgebrachte Photolacke aus anionisch polymerisierbaren Monomeren
US5064681A (en) * 1986-08-21 1991-11-12 International Business Machines Corporation Selective deposition process for physical vapor deposition
US5273849A (en) * 1987-11-09 1993-12-28 At&T Bell Laboratories Mask repair
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
US4968582A (en) * 1988-06-28 1990-11-06 Mcnc And University Of Nc At Charlotte Photoresists resistant to oxygen plasmas
US5173452A (en) * 1989-02-15 1992-12-22 Dobuzinsky David M Process for the vapor deposition of polysilanes photoresists
CA1334911C (en) * 1989-02-15 1995-03-28 David M. Dobuzinsky Process for the vapor deposition of polysilanes
IE892044A1 (en) * 1989-06-23 1991-01-02 Loctite Ireland Ltd Photoresists formed by polymerisation of di-unsaturated¹monomers
CA2019669A1 (en) * 1989-11-21 1991-05-21 John Woods Anionically polymerizable monomers, polymers thereof, and use of such polymers in photoresists
DE4202652C2 (de) * 1992-01-30 1996-03-28 Fraunhofer Ges Forschung Verfahren zum Aufbringen einer UV- und/oder elektronenstrahlempfindlichen Lackschicht

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
JPS5633827A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Photo etching method including surface treatment of substrate
JPS56104437A (en) * 1980-01-24 1981-08-20 Hitachi Ltd Formation of pattern
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
US4357364A (en) * 1981-04-27 1982-11-02 Rockwell International Corporation High rate resist polymerization method
JPS586133A (ja) * 1981-07-03 1983-01-13 Mitsubishi Electric Corp 微細パタ−ン形成装置

Also Published As

Publication number Publication date
EP0136421A3 (en) 1987-04-15
JPS6062123A (ja) 1985-04-10
EP0136421B1 (de) 1990-12-27
US4460436A (en) 1984-07-17
EP0136421A2 (de) 1985-04-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee