JPS56104437A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56104437A
JPS56104437A JP634880A JP634880A JPS56104437A JP S56104437 A JPS56104437 A JP S56104437A JP 634880 A JP634880 A JP 634880A JP 634880 A JP634880 A JP 634880A JP S56104437 A JPS56104437 A JP S56104437A
Authority
JP
Japan
Prior art keywords
substrate
mask
monomer
gas
radiation rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP634880A
Other languages
Japanese (ja)
Inventor
Makoto Kito
Toshio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP634880A priority Critical patent/JPS56104437A/en
Publication of JPS56104437A publication Critical patent/JPS56104437A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To shorten the formation of the photoresist pattern by placing a substrate such as a semiconductor wafer or the like in monomer gas of photoresist material, irradiating light or radiation rays through a mask thereto and thus polymerizing the monomer into the part to be irradiated. CONSTITUTION:When the resist pattern is formed on the substrate such as the semiconductor wafer or the like, the substrate 4 is fitted to the substrate base 5 in a resist forming device 6. The mask 2 is disposed before the substrate, active monomer gas such as, for example, methacrylic amide of the resist material is introduced from a supply port 9. The light or radiation rays 1 are irradiated through a transmission window 7 from the front of the mask 2 in this state. When this state is maintained for predetermined hours, the resist pattern 3 is covered by the polymerization of the monomer on the upper surface of the substrate 4. The active monomer gas may include, for example, any gas which can be polymerized with the light or radiation rays. Thus, the photoresist forming step can be largely shortened.
JP634880A 1980-01-24 1980-01-24 Formation of pattern Pending JPS56104437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP634880A JPS56104437A (en) 1980-01-24 1980-01-24 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP634880A JPS56104437A (en) 1980-01-24 1980-01-24 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS56104437A true JPS56104437A (en) 1981-08-20

Family

ID=11635858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP634880A Pending JPS56104437A (en) 1980-01-24 1980-01-24 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS56104437A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0136421A2 (en) * 1983-09-06 1985-04-10 International Business Machines Corporation Microlithographic process
JPS61114243A (en) * 1984-11-09 1986-05-31 Fuji Photo Film Co Ltd Formation of extremely fine pattern
JPS62273528A (en) * 1986-05-21 1987-11-27 Nippon Telegr & Teleph Corp <Ntt> Method for silylating surface of polymer film and pattern forming method using same
JPS63184332A (en) * 1987-01-26 1988-07-29 Nippon Telegr & Teleph Corp <Ntt> Silanizing treater
JPH0199042A (en) * 1987-10-13 1989-04-17 Nippon Telegr & Teleph Corp <Ntt> Method for silylating polymer film
JPH01200676A (en) * 1988-02-05 1989-08-11 Sony Corp Manufacture of semiconductor device
JPH02976A (en) * 1988-04-18 1990-01-05 Nippon Telegr & Teleph Corp <Ntt> Fine pattern forming method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0136421A2 (en) * 1983-09-06 1985-04-10 International Business Machines Corporation Microlithographic process
JPS61114243A (en) * 1984-11-09 1986-05-31 Fuji Photo Film Co Ltd Formation of extremely fine pattern
JPS62273528A (en) * 1986-05-21 1987-11-27 Nippon Telegr & Teleph Corp <Ntt> Method for silylating surface of polymer film and pattern forming method using same
JPS63184332A (en) * 1987-01-26 1988-07-29 Nippon Telegr & Teleph Corp <Ntt> Silanizing treater
JPH0199042A (en) * 1987-10-13 1989-04-17 Nippon Telegr & Teleph Corp <Ntt> Method for silylating polymer film
JPH01200676A (en) * 1988-02-05 1989-08-11 Sony Corp Manufacture of semiconductor device
JPH02976A (en) * 1988-04-18 1990-01-05 Nippon Telegr & Teleph Corp <Ntt> Fine pattern forming method

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