JPS56142638A - Forming method for minute pattern - Google Patents

Forming method for minute pattern

Info

Publication number
JPS56142638A
JPS56142638A JP4650680A JP4650680A JPS56142638A JP S56142638 A JPS56142638 A JP S56142638A JP 4650680 A JP4650680 A JP 4650680A JP 4650680 A JP4650680 A JP 4650680A JP S56142638 A JPS56142638 A JP S56142638A
Authority
JP
Japan
Prior art keywords
film
minute pattern
irradiated
energy
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4650680A
Other languages
Japanese (ja)
Inventor
Hisashi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP4650680A priority Critical patent/JPS56142638A/en
Publication of JPS56142638A publication Critical patent/JPS56142638A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To form a minute pattern by a simple process by conducting etching and corrosion-resisting masking by utilizing the difference of the reactions of a high molecular film formed on the surface of a material to be etched by the difference of the energy of electron rays. CONSTITUTION:A Cr layer 2 and a PMMA film 3 are made up on a glass substrate 1, electron beams 4 having low energy (5X10<-6> coulomb/cm<2>) are irradiated selectively and high-molecular normal chains are cut, a fragile film 5 is built up and the film 5 is removed by developing treatment, electron rays having high energy (5X10<-2>A/cm<2>) are irradiated uniformly, the film 2 is bridged and polymerized and corrosion resistance is improved, and Cr is etched in Cl plasma using the film 3 as a mask. Thus, since corrosion resistance can be improved or lowered only by changing the quantity of irradiated electron beams, a minute pattern can be formed by a simple process.
JP4650680A 1980-04-08 1980-04-08 Forming method for minute pattern Pending JPS56142638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4650680A JPS56142638A (en) 1980-04-08 1980-04-08 Forming method for minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4650680A JPS56142638A (en) 1980-04-08 1980-04-08 Forming method for minute pattern

Publications (1)

Publication Number Publication Date
JPS56142638A true JPS56142638A (en) 1981-11-07

Family

ID=12749127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4650680A Pending JPS56142638A (en) 1980-04-08 1980-04-08 Forming method for minute pattern

Country Status (1)

Country Link
JP (1) JPS56142638A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281027A (en) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp Fine pattern forming method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5460570A (en) * 1977-10-24 1979-05-16 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5460570A (en) * 1977-10-24 1979-05-16 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281027A (en) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp Fine pattern forming method

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