JPS56142638A - Forming method for minute pattern - Google Patents
Forming method for minute patternInfo
- Publication number
- JPS56142638A JPS56142638A JP4650680A JP4650680A JPS56142638A JP S56142638 A JPS56142638 A JP S56142638A JP 4650680 A JP4650680 A JP 4650680A JP 4650680 A JP4650680 A JP 4650680A JP S56142638 A JPS56142638 A JP S56142638A
- Authority
- JP
- Japan
- Prior art keywords
- film
- minute pattern
- irradiated
- energy
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002120 nanofilm Substances 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract 1
- 239000004926 polymethyl methacrylate Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To form a minute pattern by a simple process by conducting etching and corrosion-resisting masking by utilizing the difference of the reactions of a high molecular film formed on the surface of a material to be etched by the difference of the energy of electron rays. CONSTITUTION:A Cr layer 2 and a PMMA film 3 are made up on a glass substrate 1, electron beams 4 having low energy (5X10<-6> coulomb/cm<2>) are irradiated selectively and high-molecular normal chains are cut, a fragile film 5 is built up and the film 5 is removed by developing treatment, electron rays having high energy (5X10<-2>A/cm<2>) are irradiated uniformly, the film 2 is bridged and polymerized and corrosion resistance is improved, and Cr is etched in Cl plasma using the film 3 as a mask. Thus, since corrosion resistance can be improved or lowered only by changing the quantity of irradiated electron beams, a minute pattern can be formed by a simple process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4650680A JPS56142638A (en) | 1980-04-08 | 1980-04-08 | Forming method for minute pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4650680A JPS56142638A (en) | 1980-04-08 | 1980-04-08 | Forming method for minute pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56142638A true JPS56142638A (en) | 1981-11-07 |
Family
ID=12749127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4650680A Pending JPS56142638A (en) | 1980-04-08 | 1980-04-08 | Forming method for minute pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56142638A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6281027A (en) * | 1985-10-04 | 1987-04-14 | Mitsubishi Electric Corp | Fine pattern forming method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5460570A (en) * | 1977-10-24 | 1979-05-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of forming pattern |
-
1980
- 1980-04-08 JP JP4650680A patent/JPS56142638A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5460570A (en) * | 1977-10-24 | 1979-05-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of forming pattern |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6281027A (en) * | 1985-10-04 | 1987-04-14 | Mitsubishi Electric Corp | Fine pattern forming method |
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