JPS6477127A - Pattern formation - Google Patents
Pattern formationInfo
- Publication number
- JPS6477127A JPS6477127A JP23246787A JP23246787A JPS6477127A JP S6477127 A JPS6477127 A JP S6477127A JP 23246787 A JP23246787 A JP 23246787A JP 23246787 A JP23246787 A JP 23246787A JP S6477127 A JPS6477127 A JP S6477127A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resist
- bridge
- coated
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To improve the pattern precision by enhancing the etching resistance and preventing any side etching from occurring by a method wherein a bridge agent is added to a lower resist to increase the bridge density of surface agent on the lower layer resist vulnerable to the side etching. CONSTITUTION:A substrate 11 is coated with ordinary lower resist as the first layer 12 and after removing solvent by baking process at 80 deg.C for 30 minutes, the surface is irradiated with Deep UV to be hardened. Next, the layer 12 is coated with ordinary lower layer resist to which a bridge agent in molar fraction of 95:5 is added as the second layer 13 and after removing solvent by baking process at 80 deg.C for 30 minutes, the surface is irradiated with Deep UV to be hardened for increasing the bridge density of the second layer higher than that of the first layer. The lower layer resist 13 is coated with resist for multilayers as an upper layer 14 and after baking process at 100 deg.C for 20 minutes, the upper layer 14 is electron beam-exposed to be patterned. Finally, the lower layer resists 13, 12 are etched away by reactive ion etching process using the patterns of the upper 14 as masks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23246787A JPS6477127A (en) | 1987-09-18 | 1987-09-18 | Pattern formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23246787A JPS6477127A (en) | 1987-09-18 | 1987-09-18 | Pattern formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6477127A true JPS6477127A (en) | 1989-03-23 |
Family
ID=16939752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23246787A Pending JPS6477127A (en) | 1987-09-18 | 1987-09-18 | Pattern formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477127A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006003757A1 (en) * | 2004-06-30 | 2006-01-12 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming plated product using negative photoresist composition and photosensitive composition used therein |
-
1987
- 1987-09-18 JP JP23246787A patent/JPS6477127A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006003757A1 (en) * | 2004-06-30 | 2006-01-12 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming plated product using negative photoresist composition and photosensitive composition used therein |
| US8105763B2 (en) | 2004-06-30 | 2012-01-31 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming plated product using negative photoresist composition and photosensitive composition used therein |
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