JPS63184332A - Silanizing treater - Google Patents

Abstract

PURPOSE:To silanize a resist surface containing non-Si in a body to be treated, and to impart oxygen plasma resistance equal to a resist containing Si by mounting an irradiation section irradiating the inside of a chamber for treating the body to be treated with an organic polymer film with far ultraviolet rays and an introducing means for introducing an organic silane liquid or vapor thereof into said chamber. CONSTITUTION:The inside of a vessel 71 is filled with an organic silane liquid 72. A polymer inactive to far ultraviolet rays is applied onto a substrate 73 and a lower-layer polymer film 74 is formed, and an upper layer pattern 75 consisting of a polymer active to far ultraviolet rays is shaped onto the film 74, thus forming a body to be treated 76. Said body to be treated is dipped into the organic silane solution 72 or exposed into the atmosphere of organic silane vapor 72a. The body to be treated 76 is irradiated with far ultraviolet rays and only the upper layer pattern 75 is silanized, and the body to be treated 76 is extracted from the vessel 71 after the completion of irradiation treatment. A lower-layer polymer film 74 section not silanized is etched selectively through reactive ion etching by oxygen gas, thus shaping a pattern.

Description

Detailed Description of the Invention "Field of Industrial Application" This invention is applicable to semiconductors and substrates for various electronic devices by selectively adding organic silane to the surface of an organic polymer film using a photochemical reaction. The present invention relates to an apparatus that can form fine patterns with high precision.

"Prior Art and Its Problems J" Conventionally, the multilayer/cyst method (generally two-layer or three-layer layered resist method) has been developed.

Compared to forming a pattern on a single-layer resist film, these methods eliminate the negative effects on pattern formation characteristics caused by local variations in resist film thickness due to steps existing on the surface of the substrate to be processed. Moreover, since the thickness of the two most layers of resist that forms the image can be made thinner than in the case of a single resist film, it has the advantage of being able to form fine patterns with high precision, but on the other hand, the process is complicated, and There are several major problems in practical use, such as the need for special resist materials. Regarding these problems, the first
Each step of the conventional two-layer resist method shown in FIGS. 1 to 13 will be explained below.

The most important feature of this two-layer resist method is that, as shown in FIG. 11, a resist material resistant to oxygen plasma is used for the upper resist layer 81 used for pattern formation. If such a resist material could be developed, the lower organic polymer layer 82 would not be shown in FIG. 12 and the upper resist pattern 81a would be replaced.
Using this as a mask, dry etching can be performed directly as shown in FIG.

On the other hand, as a method for imparting oxygen plasma resistance to resist materials made of organic substances, there has been a method of copolymerizing a compound containing Si in the main chain or side chain of a polymer used as a resist material.
Several resist materials containing Si added by graft polymerization or esterification reactions have been developed.

However, Si-containing polymers generally lack basic properties necessary for cysts, such as solubility in solvents, sensitivity, and pattern resolution.

Therefore, it is extremely difficult to provide a resist material with sufficient basic properties and oxygen plasma resistance at the same time, and at present no resist material with sufficient comprehensive properties has been provided.

For these reasons, multilayer resist methods such as two-layer resist methods have not been put into practical use, and for this reason, it is difficult to form fine patterns with high precision on semiconductors and substrates for various electronic devices. The reality is that there are no devices available that can do this.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a processing apparatus that can silylate the surface of a non-Si-containing resist of an object to be processed and impart oxygen plasma resistance comparable to that of a Si-containing resist. It is something to do.

"Means for Solving the Problems" The silylation processing apparatus of the present invention includes a chamber for processing the object to be processed, an irradiation section for irradiating far ultraviolet rays into the chamber, and an organic silane solution in the chamber. Alternatively, the above-mentioned problem has been solved by providing an introduction means for introducing the steam.

The basic principle of photochemically silylating the resist surface = 3 is explained below using the two-layer resist method as an example, and Figures 9 and 1.
This will be explained with reference to diagram O.

First, as shown in FIG. 9 or 10, a container 71 is filled with an organic silane liquid 72. In addition, a polymer inactive to deep ultraviolet rays is applied to the substrate 73'' to form a lower polymer film 74.
An upper layer pattern 75 made of a polymer active in deep ultraviolet rays is formed thereon using a known lithography technique, thereby forming an object 76 to be processed. Next, the object to be treated is immersed in an organic silane solution 72 as shown in FIG. 9, or exposed to an atmosphere of organic silane vapor 72a as shown in FIG.

Next, the object to be processed 76 is irradiated with deep ultraviolet rays to silylate only the upper layer pattern 75, and after the irradiation process is completed, the object to be processed 76 is
is taken out from the container 71. Thereafter, by performing reactive ion etching using oxygen gas, the portions of the lower polymer film 74 that have not been silylated are selectively etched to form a pattern.

"Example" Examples of the present invention will be described in detail below.

FIG. 1 is a diagram showing a first embodiment of the present invention, and shows a single-wafer type silylation processing apparatus.

Reference numeral 1 in the figure represents a target object to be subjected to silylation treatment, and this target object 1 is processed within a chamber 2 . The chamber 2 is box-shaped and has an opening on its top or bottom surface. The opening of this chamber 2 is sealed with a lid 3 made of transparent quartz glass or the like, thereby keeping the inside of the chamber 2 airtight. An irradiation unit 4 is disposed above the chamber 2 and is attached to a support (not shown). The irradiation unit 4 is made of a mercury lamp or the like, and irradiates the object 1 inside the chamber 2 with far ultraviolet rays through the lid 3.
This is a photochemical treatment.

An introduction pipe 5 is connected to one side of the chamber 2 so as to communicate with the interior of the chamber 2, and a container 7 filled with an organic silane liquid 6 such as alkylsilane is connected to the introduction pipe 5. The introduction pipe 5 communicates with the inside of the container 7, so that the organic silane liquid 6 or its vapor 6a is introduced into the chamber 2. The introduction pipe 5 also has an organic silane liquid 6 or its vapor 6a in its path.
A flow rate regulator 8 is provided to adjust the amount of water flowing into the chamber 2. Container 7 is placed within vaporizer 9 . The vaporizer 9 has a heater and heats the organic silane liquid 6 in the container 7 via water, oil, etc. filled inside the vaporizer 9, and is controlled by a thermostat (not shown) to heat the organic silane liquid 6. This is to maintain a predetermined temperature.

A ventilation pipe 10 is inserted into the container 7.

This ventilation pipe 10 has one end reaching near the bottom of the container 7, and the other end connected to a supply source 11 of an inert gas such as nitrogen gas, which serves as a carrier gas, and the intermediate part thereof A valve 12 is provided for controlling the flow of carrier gas from the supply source 11 into the container 7 .

A purge ventilation pipe 13 is connected to the other side of the chamber 2 so as to communicate with the inside of the chamber 2 , and a suction pipe 14 is also connected to the bottom of the chamber 2 so as to communicate with the inside of the chamber 2 . The purge vent pipe 13 has its chamber 2.
A supply source 15 of an inert gas such as nitrogen gas, which serves as a purge gas, is connected to the opposite end, and a valve for controlling the flow of carrier gas from the supply source 15 into the container 7 is connected in the middle. 16 are arranged. The suction tube 14 includes
A negative pressure source 17 such as a vacuum pump is connected to the end opposite to the chamber 2, and an exhaust pipe 18 is connected to the middle part.
are branched and connected. Further, a pressure gauge 19 for displaying the pressure inside the chamber 2 is attached to the suction pipe 14 on the chamber 2 side with respect to the exhaust pipe 18.
The chamber 2 by the negative pressure source 17 is on the negative pressure source 17 side.
A valve 20 is provided to control the suction from. A recovery section 21 is connected to the exhaust pipe 18 at the end opposite to the suction pipe 14, and thereby the chamber 2
The organic silane liquid 6 or its vapor 6a exhausted from the tank is led to a recovery section 21. Further, a valve 22 for controlling exhaust from the chamber 2 is provided in the middle of the exhaust pipe 18 .

Next, a normal pressure method, a reduced pressure method, and a carrier gas method will be described as methods for silylation of the object to be processed 1 using the silylation processing apparatus having such a configuration.

In the normal pressure method, first, the object to be processed I is placed on the installation stand 2 in the chamber 2.
Place the chamber 2 on the chamber 2, and cover the chamber 2 with the lid 3 to make the inside of the chamber 2 airtight. Here, the object to be processed 1 is a substrate on which a polymer layer (organic polymer film) made of a resist material and active in deep ultraviolet rays is formed in advance.

Next, the container 7 is heated by the vaporizer 9 and the organic silane liquid 6 is heated.
is vaporized, and the flow rate regulator 8 is adjusted to introduce a predetermined amount of the vapor 6a of the organic silane liquid 6 into the chamber 2 via the introduction pipe 5, and radiate it onto the surface of the object to be processed 1. after that,
Far ultraviolet rays are irradiated from the irradiation unit 4 to silylate the resist surface of the object to be processed 1. Note that the vapor 6a of the organic silane liquid 6
When the chamber 2 is filled with gas and its internal pressure becomes higher than a predetermined pressure, the valve 22 of the exhaust pipe 18 is opened to evacuate the chamber 2 and the pressure is lowered to a predetermined pressure. Furthermore, after the silylation is completed, the heating by the vaporizer 9 is stopped and the organic silane liquid 6 is heated.
After returning the gas to room temperature and shutting off the introduction pipe 5 using the flow rate regulator 8, purge gas is introduced into the chamber 2 from the supply source 15 through the ventilation pipe 13 and the valve 16.
The vapor 6a of the organic silane liquid 6 inside is discharged from the exhaust pipe 18. After the inside of the chamber 2 has been sufficiently purged with the purge gas, the object to be processed 1 is taken out and processed using an oxygen paste active ion etching apparatus (not shown).

In the reduced pressure method, the object to be processed 1 is placed in the chamber 2 and the lid 3 is closed, as in the normal pressure method described above, and then the valve 20 of the suction tube 14 is opened and the negative pressure source 17 is activated to make the inside of the chamber 2 negative. Pressure. Next, the flow regulator 8 is adjusted to establish communication between the inside of the container 7 and the inside of the chamber 2, and the inside of the chamber 2 is maintained at a predetermined negative pressure by monitoring with the pressure gauge 19. Then, the vaporization of the organic silane liquid 6 is promoted by reducing the pressure inside the container 7, and the vapor 6a is guided into the chamber 2 by the pressure difference between the inside of the container 7 and the inside of the chamber 2. Next, far ultraviolet rays are irradiated from the irradiation unit 4 to silylate the resist surface of the object to be processed I.

When the silylation is completed, the operation of the negative pressure source 17 is stopped and the valve 20 is closed. Then, the inside of the chamber 2 is purged in the same way as in the above-mentioned normal pressure method, and the object to be processed l is taken out. is processed using an oxygen paste active ion etching device.

As an example of a product obtained by processing with this method, FIG. 2 shows the experimental results of oxygen glue active ion etching of the object to be processed 1 whose renost surface was silylated.

Reactive ion etching shows the etching rate when parallel plate type reactive ion etching is performed in an oxygen gas atmosphere under a constant high frequency input of 65 mW/am', and the solid line A shows the etching rate for an alkylsilane solution (CH3). This is an example of A Z 1350 resist (components are a mixture of cresol novolak resin and 0-naphthoquinonediazide photosensitizer) that was silylated by irradiating deep ultraviolet rays for 10 minutes using 25iHc1, and dotted line B indicates A that was not silylated. This is the case with Z 1350 resist.

As a result, it was found that the etching rate in oxygen gas can be significantly reduced by silylation, and an etching rate of 1/20 or less can be obtained, thereby significantly improving oxygen plasma resistance.

Furthermore, in the carrier gas method, the object to be processed l is placed in the chamber 2 and the lid 3 is closed, as in the above-mentioned normal pressure method, and then the ventilation pipe 10 is
The valve 12 is opened, and a carrier gas such as nitrogen is introduced into the container 7 from the carrier gas supply source 11. Then, the carrier gas introduced into the container 7 rises in the organic silane liquid 6 from near the bottom of the container 7, thereby promoting the vaporization of the organic silane liquid 6 and converting the vapor 6a of the organic silane liquid 6 in parentheses. Accordingly, it flows into the introduction pipe 5. Furthermore, by adjusting the flow rate regulator 8 in advance before introducing the carrier gas into the container 7, a predetermined amount of the carrier gas accompanied by the vapor 6a of the organic silane liquid 6 introduced into the introduction pipe 5 can be adjusted into the chamber 2. Please make sure that it is introduced. And chamber 2
After a predetermined amount of vapor 6a of the organic silane liquid 6 is introduced into the chamber, deep ultraviolet rays are irradiated from the irradiation section 4 to silylate the renost surface of the object to be treated. Furthermore, when the silylation is completed, after closing the valve 12, the chamber 2 is purged in the same way as in the normal pressure method or reduced pressure method, and the object to be processed is taken out and treated with oxygen paste and active ions. Processed using etching equipment. Note that in order to promote vaporization of the organic silane liquid 6, the container 57 may be heated by the vaporizer 9, and in that case, the flow rate of the carrier gas introduced into the container 7 can be reduced.

In addition, in this silylation processing apparatus, the type of quartz glass used for the lid 3, the type of far-ultraviolet light source used for the irradiation part 4, and the type of resist material forming the polymer layer of the object to be processed I are selected. This allows selection of the solyl reaction. The method will be explained below.

The types of quartz glass, far ultraviolet light source, and resist materials mentioned above are as follows:
The upper resist film 62 of the object to be processed 61 shown in FIGS. 3 and 4 or the object to be processed 64 shown in FIGS. 5 and 6
It can be used depending on which part of the lower resist film 66 is to be silylated. Here, FIGS. 3 and 4 show an example in which the upper resist film 62 is silylated.
5 shows a state in which the surface 62a of the upper resist film 62 is silylated, and FIG. 4 shows that after the surface 62a of the upper resist film 62 has been silylated, the lower resist film 63 is etched by active ion etching using oxygen. It shows an etched state. 5 and 6 show examples of silylation of the lower resist film 66. FIG. 5 shows a state in which the surface 66a of the lower resist film 66 is silylated, and FIG. The upper resist film 65 is shown to be etched by oxygen active ion etching after the surface 66a of the lower resist film 66 has been silylated.

As shown in these figures, the object to be processed 61 shown in FIG. 4 and the object to be processed 64 shown in FIG. 6 have patterns that are inverted from each other.

Next, specific conditions for performing the above silylation will be described. In order to carry out the silylation as shown in FIGS. 3 and 4, a synthetic quartz plate is used as the quartz glass used in the lid 3 shown in FIG. 1, which does not transmit deep ultraviolet rays having a wavelength of 21 Or+n+ or less. Further, as the upper layer Renost film 62, a resist such as AZ1350 that is sensitive to ultraviolet rays or a resist such as PMMA that is sensitive to electron beams is used, and as the lower layer resist film 63, a non-photosensitive polymer such as polyimide is used.

Furthermore, as the mercury lamp used in the irradiation section 4 shown in Fig. 1, in addition to low-pressure mercury lamps, high-pressure and ultra-high-pressure mercury lamps having a spectrum at a wavelength of 250 nm, far-ultraviolet light sources such as Xe-Xg lamps and microwave discharge mercury lamps are used. do.

On the other hand, in order to perform silylation as shown in FIGS. 5 and 6, the quartz glass used for the lid 3 is
An ozone-free quartz plate that does not pass through is used, and as a far-ultraviolet light source used in the irradiation section 4, an ozone-free low-pressure mercury lamp that does not pass a wavelength of 184.9 nm but only a wavelength of 254 nm is used. In this case, the upper resist film 65 is 250 nm thick.
Even if a polymethacrylic electron beam resist such as PMMA or EBR-9, which absorbs only ultraviolet rays, is used, this resist will not be silylated. In addition, 1 tl of cresol novolac to be silylated on the lower resist film 66 is added.
If a polymer such as a hard-baked ultraviolet resist is used, only the lower resist film 66 is silylated, and as a result, a pattern inverted with respect to the object to be processed 61 shown in FIG. 4 is formed.

In this way, by selecting the quartz glass used for the lid 3 shown in FIG. 1 and the type of deep ultraviolet light source used for the irradiation section 4 according to the materials used for the upper and lower resist films of the object to be processed, It becomes possible to silylate a resist for use with electron beams, and to silylate a resist for use with electron beams, or to silylate a resist for use with electron beams, or to not silylate a resist for use with electron beams, thereby making it possible to easily form an inverted pattern.

FIG. 7 is a diagram showing a second embodiment of the present invention, and shows an in-line silylation processing apparatus. In the figure, 31, 31... are wafers (
This wafer 31 is processed in a processing chamber (chamber) 32. The processing chamber 32 has a rectangular parallelepiped shape with a processing space inside, and a lid 33 made of a material that transmits far ultraviolet rays, such as quartz glass, is attached to its upper surface. Further, the lid 33 is removable, so that lids made of various materials can be used depending on the purpose. Above the processing chamber 32, an irradiation section 3 is provided.
4 is attached and arranged by a support member (not shown) or the like. The irradiation section 34 is composed of a plurality of mercury lamps, etc., and irradiates the wafer 31.31 inside the processing chamber 32 with far ultraviolet rays through the lid 33 of the processing chamber 32 to perform photochemical processing. Further, a vent pipe 35 communicating with the processing chamber 32 is connected to one side of the processing chamber 32, and a container 37 filled with an organic solane liquid 36 such as alkylsilane is connected to the vent pipe 35. has been done. The vent pipe 35 communicates with the inside of the container 37, thereby allowing the organic silane liquid 36 or its vapor 36a to flow into the processing chamber 32.
It is now being introduced into the Also, this ventilation pipe 3
5 is provided with a valve 38 in its path for controlling the flow of the organic silane liquid 36 or its vapor 36a into the processing chamber 32. Container 37 is placed within vaporizer 39 .

The vaporizer 39 is similar to the vaporizer 9 shown in FIG.
This is to heat the organic silane liquid 36 in the organic silane liquid 3, which is controlled by a thermostat (not shown) or the like.
6 at a predetermined temperature.

Further, at the bottom of the processing chamber 32, there is a belt conveyor 40 that conveys the wafers 31, 31, etc. along the longitudinal direction of the processing chamber 32.
is installed. This belt conveyor 40 has a conveyor belt 41 that passes between an inlet 42 formed on the side surface to which the ventilation pipe 35 is connected and an outlet 43 formed on the opposite side surface, and passes through a processing chamber. 32, and the rotational speed of the conveyor belt 41 is made variable by a control section (not shown).

Further, on the side of the loading port 42 side of this wafer transport mechanism 40, wafers 31, 31, . . . are sequentially placed on a transport belt 41.
A carry-in loader 44 is placed on top of the carry-in loader 44, and a carry-in loader 44 is disposed on the side of the carry-out port 43, and an carry-out loader is placed on the side of the carry-out port 43, which sequentially receives the wafers 31, 31, etc. carried by the conveyor belt 41 and sends them to the outside. 45 are arranged. Here, the carrying-in loader 44 and the carrying-out loader 45 have variable conveyance speeds by a control section (not shown).

In order to continuously silylate wafers 31, 31, etc. using the silylation processing apparatus having such a configuration,
First, the conveyance speeds of the conveyor belt 41, the carry-in loader 44, and the carry-out loader 45 are adjusted to a predetermined speed.

In this case, the wafers 31, 31, . . . are wafers on which a deep ultraviolet-active polymer layer made of a resist material is previously formed on a substrate, similar to the object to be processed 1 shown in FIG. Next, the valve 38 of the vent pipe 35 is opened, and the organic silane liquid 36 in the container 37 is heated and vaporized by the vaporizer 39. Then, the vapor 36a of the organic silane liquid 36 flows through the ventilation pipe 35.
The liquid then flows into the processing chamber 32 and fills the processing chamber 32. Next, the wafers 31, 31 and 31 are loaded onto the loading loader 44.
The wafers 31 and 31 are thereby sequentially moved within the processing chamber 31 by the conveyor belt 41. At the same time, the irradiation unit 34 irradiates deep ultraviolet rays into the processing chamber 32 to silylate the wafers 31, 31, . . . . Thereafter, the processed wafer 31.
31 is taken up by the receiver and transported to the outside one by one. In this case, the processing time is adjusted by the rotation speed of the conveyor belt 41.

In such a silylation processing apparatus, the wafer 31 (object to be processed) is used as in the silylation processing apparatus shown in FIG.
Of course, it is possible to silylate 31.3 wafers.
Since 1... can be processed continuously and automatically, mass production can be performed more efficiently.

FIG. 8 is a diagram showing a third embodiment of the present invention, and shows an in-line silylation processing apparatus.

The silylation processing apparatus shown in FIG. 8 differs from the silylation processing apparatus shown in FIG. 7 in the introduction means for introducing the organic silane liquid 36 into the processing chamber 32. In FIG. 8, an inlet pipe 46 is provided below the loading port 42 of the wafer transport mechanism 40 on one side of the processing chamber 32, and an outlet pipe 47 is provided below the unloading port 43 on the opposite side.
communicated and connected within.

In this case, the connecting portion 47a of the outlet pipe 47 with the processing chamber 32
is located below the connection portion 46a of the introduction pipe 46 with the processing chamber 32, and approximately at the lower end of the processing chamber 32. Introductory tube 46
A pump 48 is disposed at the end of the outlet pipe 47 opposite to the processing chamber 32, and the end of the outlet pipe 47 opposite to the processing chamber 32 is provided with a pump 48.
= A liquid reservoir 49 filled with an organic silane liquid 36 is provided. Furthermore, the pump 48 and the liquid reservoir 49 are communicated with each other by a communication pipe 50, whereby the liquid reservoir 49, the communication pipe 50, the pump 48, the inlet pipe 46, the processing chamber 32, and the outlet pipe 47 constitute a circulation cycle. are doing.

With such a silylation treatment apparatus, the same treatment as in the case of the silylation treatment apparatus shown in FIG. 7 is carried out.

In this case, in order to introduce the organic silane liquid 36 into the processing chamber 32, the organic silane liquid 36 in the liquid reservoir 49 is transferred by operating the pump 48. Then, the organic silane liquid 36 is introduced into the processing chamber 32, where it stays and partially vaporizes, and is further led out from the outlet pipe 47 through the valve 51 disposed in the outlet pipe 47 and into the liquid reservoir 49. It will be sent back and circulated.

Even with such a silylation processing apparatus, a large number of wafers can be efficiently silylated similarly to the apparatus shown in FIG.

Note that a heater 52 may be disposed at the lower part of the processing chamber 32 to heat the organic silane liquid 36 in the processing chamber 32 and promote its vaporization. - Can be silylated.

"Effects of the Invention" As explained above, the silylation treatment apparatus of the present invention has
The resist is equipped with a chamber for processing the object to be processed, an irradiation unit for irradiating deep ultraviolet rays into the chamber, and an introduction means for introducing organic silane liquid or its vapor into the chamber. The object to be processed is prepared by forming a deep ultraviolet-active polymer layer on the substrate in advance.
Silylization can be performed using a photochemical reaction, making it possible to easily form highly versatile fine patterns. It can be suitably used for device pattern formation.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram showing a first embodiment of the silylation processing apparatus of the present invention, and FIG. 2 shows a resist film silylated by the silylation processing apparatus shown in FIG. Graph showing the etching rate when reactive ion etching is performed on the resist film in oxygen scum, 3rd graph.
The figure is a cross-sectional view showing the state in which the two-layer resist film of the object to be processed has been silylated, and FIG. 4 is a cross-sectional view showing the state in which the lower resist film of the object shown in FIG. 3 has been processed by reactive ion etching. Figure 5 is a cross-sectional view showing the state in which the lower resist film of the object to be processed has been silylated, and Fig. 6 is a cross-sectional view showing the state in which the upper resist film of the object to be processed shown in Fig. 5 has been processed by reactive ion etching. 7 is a schematic diagram showing the second embodiment of the silylation treatment apparatus of the present invention, FIG. 8 is a schematic diagram showing the third embodiment, and FIGS. 9 and 10. 11 to 13 are explanatory diagrams for explaining the principle of silylation of the surface of an organic polymer film according to the present invention, and FIGS. 11 to 13 are illustrations of the steps of a conventional two-layer resist method using a Si-containing resist. FIG. l...Object to be processed, 2...Chamber, 3...
... Lid, 4 ... Irradiation section, 5 ... Introduction tube, 6 ... Organic silane liquid, 7 ... Container,
8...Flow rate regulator, 9...Carburizer, 1
0... Ventilation pipe, 11... Supply source, 12
... Valve, 31 ... Wafer (object to be processed), 32 ... Processing chamber (chamber), 34.
...Jltli injection 1.35...Vent pipe, 36...Organic silane liquid, 37...Container,
38... valve, 39... carburetor, 4
6... Inlet pipe, 47... Outlet pipe, 48...
...Pump, 49...Liquid reservoir, 50...
...Communication pipe.

Claims (1)

[Claims] The surface of the organic polymer film is silylated by irradiating the surface of the organic polymer film with deep ultraviolet rays while the object to be treated having the organic polymer film is immersed in an organic silane liquid or brought into contact with its vapor. A processing apparatus comprising: a chamber for processing the object to be processed; an irradiation section for irradiating deep ultraviolet rays into the chamber; and an introduction means for introducing an organic silane liquid or its vapor into the chamber. A silylation processing apparatus characterized by comprising: