JP2751235B2 - Photoresist coating equipment - Google Patents

Photoresist coating equipment

Info

Publication number
JP2751235B2
JP2751235B2 JP21931288A JP21931288A JP2751235B2 JP 2751235 B2 JP2751235 B2 JP 2751235B2 JP 21931288 A JP21931288 A JP 21931288A JP 21931288 A JP21931288 A JP 21931288A JP 2751235 B2 JP2751235 B2 JP 2751235B2
Authority
JP
Japan
Prior art keywords
photoresist
semiconductor substrate
ultraviolet light
photoresist coating
coating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21931288A
Other languages
Japanese (ja)
Other versions
JPH0266551A (en
Inventor
正晴 柳井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP21931288A priority Critical patent/JP2751235B2/en
Publication of JPH0266551A publication Critical patent/JPH0266551A/en
Application granted granted Critical
Publication of JP2751235B2 publication Critical patent/JP2751235B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はフォトレジスト塗布装置に関し、特に半導体
基板上にフォトレジストを塗布するフォトレジスト塗布
装置に関する。
Description: TECHNICAL FIELD The present invention relates to a photoresist coating apparatus, and more particularly to a photoresist coating apparatus for coating a photoresist on a semiconductor substrate.

〔従来の技術〕[Conventional technology]

従来、この種のフォトレジスト塗布装置は、第4図に
示すように、上面に処理される半導体基板4を吸着固定
して回転する回転チャック1と、半導体基板4の上方か
らフォトレジストを滴下する滴下ノズル2と、回転チャ
ック1の外周を囲って設けられたカップ3とを備えて構
成されていた。
Conventionally, a photoresist coating apparatus of this type, as shown in FIG. 4, rotates and chucks a semiconductor substrate 4 to be processed on an upper surface and rotates the same, and drops a photoresist from above the semiconductor substrate 4. It had a dripping nozzle 2 and a cup 3 provided around the outer periphery of the rotary chuck 1.

又、第4図のフォトレジスト塗布装置を用いた半導体
装置の製造装置は、基板前処理装置とフォトレジスト塗
布装置と乾燥装置とから構成されていた(例えば、半導
体製造装置実用便覧、236頁、サイエンスフォーラム
社、昭和59年参照)。
Also, the semiconductor device manufacturing apparatus using the photoresist coating apparatus of FIG. 4 was composed of a substrate pretreatment apparatus, a photoresist coating apparatus, and a drying apparatus (for example, Semiconductor Manufacturing Equipment Handbook, p. 236, Science Forum, 1984).

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

上述した従来のフォトレジスト塗布装置は、フォトレ
ジスト塗布前に半導体基板表面における酸化膜やシリコ
ン表面層の脱水を目的として、ホットプレートによる加
熱やヘキサメチルジシラザンによる脱水処理機構が設け
られ、フォトレジストの密着性を向上させるものが一般
的である。
The conventional photoresist coating apparatus described above is provided with a heating mechanism using a hot plate or a dehydration processing mechanism using hexamethyldisilazane for the purpose of dehydrating an oxide film or a silicon surface layer on the surface of the semiconductor substrate before applying the photoresist. Is generally used to improve the adhesion.

特に、下地基板と密着性の悪いポジ形のフォトレジス
トを塗布する場合には、ヘキサメチルジシラザンの蒸気
処理が一般的であるが、この場合半導体基板表面に付着
するヘキサメチルジシラザンの量を制御することが困難
であり、付着量が多すぎた場合にはフォトレジストと基
板の密着性を妨げたり、露光時の発泡現象の原因になる
という欠点がある。
In particular, when a positive photoresist having poor adhesion to the underlying substrate is applied, the vapor treatment of hexamethyldisilazane is generally performed. In this case, the amount of hexamethyldisilazane adhering to the surface of the semiconductor substrate is reduced. It is difficult to control, and if the amount of adhesion is too large, there is a drawback that the adhesion between the photoresist and the substrate is hindered or a foaming phenomenon occurs during exposure.

〔課題を解決するための手段〕[Means for solving the problem]

本発明のフォトレジスト塗布装置は、上面に半導体基
板を固定して回転する回転チャックと、前記半導体基板
上にフォトレジストを滴下する滴下ノズルとを備えるフ
ォトレジスト塗布装置において、前記フォトレジストの
滴下直前に前記半導体基板上に紫外光を直接照射する紫
外光照射部を有している。
The photoresist coating apparatus of the present invention is a photoresist coating apparatus comprising: a rotating chuck that fixes and rotates a semiconductor substrate on an upper surface; and a drip nozzle that drops a photoresist on the semiconductor substrate. And an ultraviolet light irradiator for directly irradiating the semiconductor substrate with ultraviolet light.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例を示す断面図である。 FIG. 1 is a sectional view showing a first embodiment of the present invention.

第1図に示すように、第1の実施例は前述した第4図
のフォトレジスト塗布装置に紫外光照射部5を付加した
もので、その他の構成は第4図のフォトレジスト塗布装
置と同様である。
As shown in FIG. 1, the first embodiment is obtained by adding an ultraviolet light irradiation unit 5 to the above-described photoresist coating apparatus of FIG. 4, and the other configuration is the same as that of the photoresist coating apparatus of FIG. It is.

図示しない前処理部でヘキサメチルジシラザン蒸気処
理をされた半導体基板4は図示しない搬送機構により回
転チャック1上に送られ、回転チャック1に真空吸着さ
れる。従来は、この段階で滴下ノズル2からフォトレジ
ストを所要量滴下していたが、第1の実施例では、紫外
光照射部5から波長180〜300nmの紫外線を半導体基板4
上に照射し、基板表面の改質をはかる。
The semiconductor substrate 4 which has been subjected to the hexamethyldisilazane vapor treatment in a pretreatment section (not shown) is sent onto the rotary chuck 1 by a transport mechanism (not shown), and is vacuum-sucked to the rotary chuck 1. Conventionally, a required amount of photoresist was dropped from the dropping nozzle 2 at this stage. However, in the first embodiment, ultraviolet light having a wavelength of 180 to 300 nm is irradiated from the ultraviolet light irradiation unit 5 to the semiconductor substrate 4.
Irradiate upward to modify the surface of the substrate.

第2図は半導体基板表面の処理方法と半導体基板上の
水滴の接触角との相関を示す特性図である。
FIG. 2 is a characteristic diagram showing a correlation between a method of treating a semiconductor substrate surface and a contact angle of a water droplet on the semiconductor substrate.

第2図において、縦軸は半導体基板上に滴下した水滴
が表面張力によって生じる接触角を測定した結果、横軸
は半導体基板の各種処理方法を示す。第2図に示すよう
に、紫外光照射により半導体基板上の改質が進み、表面
張力が非常に低下していることがわかる。
In FIG. 2, the vertical axis shows the result of measuring the contact angle generated by the surface tension of a water drop dropped on the semiconductor substrate, and the horizontal axis shows various processing methods for the semiconductor substrate. As shown in FIG. 2, it can be seen that the modification on the semiconductor substrate is advanced by the irradiation of ultraviolet light, and the surface tension is extremely reduced.

即ち、紫外光照射により酸素分子のオゾン化反応を促
進し、このオゾンはさらに励起酸素原子に分解され、半
導体基板表面の有機物、特に炭素,フッカカーボン及び
炭化水素を分解する。
That is, the ozonation reaction of oxygen molecules is accelerated by the irradiation of ultraviolet light, and this ozone is further decomposed into excited oxygen atoms to decompose organic substances, particularly carbon, hooker carbon and hydrocarbons, on the surface of the semiconductor substrate.

第3図は本発明の第2の実施例を用いる半導体装置の
製造装置の斜視図である。
FIG. 3 is a perspective view of an apparatus for manufacturing a semiconductor device using the second embodiment of the present invention.

第3図に示すように、半導体装置の製造装置は前処理
部としてのヘキサメチルジシラザン処理部11とホットプ
レート式オーブン12と紫外光処理部13及びフォトレジス
ト滴下部14から成るフォトレジスト塗布装置15とを含ん
で構成される。
As shown in FIG. 3, a semiconductor device manufacturing apparatus is a photoresist coating apparatus including a hexamethyldisilazane processing section 11 as a preprocessing section, a hot plate type oven 12, an ultraviolet light processing section 13, and a photoresist dropping section 14. 15 and is included.

紫外光処理部13には低圧水銀灯16があり紫外光が外部
にもれないように密閉されている。半導体基板(図示せ
ず)は基板搬送路17に乗せられ、ヘキサメチルジシラザ
ン処理部11からフォトレジスト滴下部14へと順次送ら
れ、ヘキサメチルジシラザン処理部11で蒸気処理された
後、ホットプレート式オーブン12で加熱され、更に紫外
光処理部13で185nmの波長の紫外光を照射されて、フォ
トレジスト滴下部14でフォトレジストを塗布される。
A low-pressure mercury lamp 16 is provided in the ultraviolet light processing unit 13 and is sealed so that ultraviolet light does not leak to the outside. A semiconductor substrate (not shown) is placed on a substrate transport path 17, sequentially sent from a hexamethyldisilazane processing unit 11 to a photoresist dropping unit 14, and subjected to steam processing in the hexamethyldisilazane processing unit 11, It is heated in a plate type oven 12, further irradiated with ultraviolet light having a wavelength of 185 nm in an ultraviolet light processing section 13, and coated with a photoresist in a photoresist dropping section 14.

第2の実施例では、紫外光処理部13とフォトレジスト
滴下部14とが独立しているので、機構が簡単になる利点
がある。
In the second embodiment, since the ultraviolet light processing section 13 and the photoresist dropping section 14 are independent, there is an advantage that the mechanism is simplified.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明は、フォトレジストの回転
塗布直前に波長180〜300nmの紫外光を照射する紫外光照
射部を設けることにより、半導体基板上にフォトレジス
トを塗布する直前に表面の残留有機分を分解し、半導体
基板表面を改質してフォトレジストの塗布特性を向上さ
せるとともに露光時の微細加工性を向上させる効果を有
する。
As described above, the present invention provides an ultraviolet light irradiating unit for irradiating ultraviolet light having a wavelength of 180 to 300 nm immediately before spin-coating of a photoresist, so that the organic residue remaining on the surface immediately before coating the photoresist on the semiconductor substrate is provided. It has the effect of improving the coating characteristics of the photoresist by dissolving the components and modifying the surface of the semiconductor substrate, as well as improving the fine workability during exposure.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の第1の実施例の断面図、第2図は半導
体基板表面の処理方法と半導体基板上の水滴の接触角と
の相関を示す特性図、第3図は本発明の第2の実施例を
用いる半導体装置の製造装置の斜視図、第4図は従来の
フォトレジスト塗布装置の一例の断面図である。 1……回転チャック、2……滴下ノズル、3……カッ
プ、4……半導体基板、5……紫外光照射部、11……ヘ
キサメチルジシラザン処理部、12……ホットプレート式
オーブン、13……紫外光処理部、14……フォトレジスト
滴下部、15……フォトレジスト塗布装置、16……低圧水
銀灯、17……基板搬送路。
FIG. 1 is a sectional view of a first embodiment of the present invention, FIG. 2 is a characteristic diagram showing a correlation between a method of treating a semiconductor substrate surface and a contact angle of a water droplet on the semiconductor substrate, and FIG. FIG. 4 is a perspective view of a semiconductor device manufacturing apparatus using the second embodiment, and FIG. 4 is a sectional view of an example of a conventional photoresist coating apparatus. DESCRIPTION OF SYMBOLS 1 ... Rotating chuck, 2 ... Drip nozzle, 3 ... Cup, 4 ... Semiconductor substrate, 5 ... Ultraviolet light irradiation section, 11 ... Hexamethyldisilazane processing section, 12 ... Hot plate type oven, 13 … UV light processing unit, 14… photoresist dropping unit, 15… photoresist coating device, 16… low pressure mercury lamp, 17… substrate transport path.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】上面に半導体基板を固定して回転する回転
チャックと、前記半導体基板上にフォトレジストを滴下
する滴下ノズルとを備えるフォトレジスト塗布装置にお
いて、前記フォトレジストの滴下直前に前記半導体基板
上に紫外光を直接照射する紫外光照射部を有することを
特徴とするフォトレジスト塗布装置。
1. A photoresist coating apparatus, comprising: a rotary chuck that fixes and rotates a semiconductor substrate on an upper surface; and a drip nozzle that drip a photoresist onto the semiconductor substrate. A photoresist coating apparatus comprising an ultraviolet light irradiating section for directly irradiating ultraviolet light thereon.
JP21931288A 1988-08-31 1988-08-31 Photoresist coating equipment Expired - Lifetime JP2751235B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21931288A JP2751235B2 (en) 1988-08-31 1988-08-31 Photoresist coating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21931288A JP2751235B2 (en) 1988-08-31 1988-08-31 Photoresist coating equipment

Publications (2)

Publication Number Publication Date
JPH0266551A JPH0266551A (en) 1990-03-06
JP2751235B2 true JP2751235B2 (en) 1998-05-18

Family

ID=16733513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21931288A Expired - Lifetime JP2751235B2 (en) 1988-08-31 1988-08-31 Photoresist coating equipment

Country Status (1)

Country Link
JP (1) JP2751235B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312257A (en) * 1996-03-18 1997-12-02 Fujitsu Ltd Fine processing method and device
JP5415881B2 (en) * 2009-09-16 2014-02-12 東京エレクトロン株式会社 Hydrophobic treatment apparatus, hydrophobic treatment method, program, and computer storage medium
JP6142839B2 (en) * 2014-04-24 2017-06-07 東京エレクトロン株式会社 Liquid processing method, liquid processing apparatus, storage medium

Also Published As

Publication number Publication date
JPH0266551A (en) 1990-03-06

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