JP3011728B2 - Surface treatment equipment - Google Patents
Surface treatment equipmentInfo
- Publication number
- JP3011728B2 JP3011728B2 JP1323214A JP32321489A JP3011728B2 JP 3011728 B2 JP3011728 B2 JP 3011728B2 JP 1323214 A JP1323214 A JP 1323214A JP 32321489 A JP32321489 A JP 32321489A JP 3011728 B2 JP3011728 B2 JP 3011728B2
- Authority
- JP
- Japan
- Prior art keywords
- hmds
- carrier gas
- gas
- hexamethyldisilazane
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は表面処理装置に関し、特に半導体ウェハの表
面処理装置に係る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus, and particularly to a surface treatment apparatus for a semiconductor wafer.
［従来の技術］ 半導体ウェハ製造におけるホトレジスト処理工程は、
ウェハ上に積層されたSiO2等の薄膜上にレジスト塗布
し、所望のパターンに露光、現像して薄膜上にパターン
を形成している。通常、レジスト塗布前の半導体ウェハ
上の薄膜は大気中の水気を吸収し、表面にOH基が吸着し
て親水性となっている。親水性表面に対してポジレジス
トを塗布した場合、レジストの接着性が弱いため現像処
理中にレジストの剥離が生じることがある。[Prior Art] A photoresist processing step in the manufacture of a semiconductor wafer includes:
A resist is applied on a thin film of SiO 2 or the like laminated on the wafer, and a desired pattern is exposed and developed to form a pattern on the thin film. Normally, a thin film on a semiconductor wafer before resist application absorbs moisture in the air, and OH groups are adsorbed on the surface to be hydrophilic. When a positive resist is applied to a hydrophilic surface, peeling of the resist may occur during the development process due to weak adhesiveness of the resist.
このためレジストの接着性強化のためにHMDS（ヘキサ
メチルジシラザン（CH3）3SiNHSi（CH3）３））を用い
てウェハ表面で以下の反応式に示す処理により疎水性化
処理（アドヒュージョン処理）が行われている。For this reason, in order to enhance the adhesiveness of the resist, the surface of the wafer is made hydrophobic by the treatment shown in the following reaction formula using HMDS (hexamethyldisilazane (CH 3 ) 3 SiNHSi (CH 3 ) 3 ). Processing) is being performed.
HMDSの処理方法は通常薬液使用量の少ないHMDSベーパ
により、アドヒュージョン処理が施されている。 In the HMDS processing method, adfusion processing is usually performed by HMDS vapor which uses a small amount of a chemical solution.
［発明が解決すべき課題］ ベーパ処理のHMDS処理装置は第５図に示すように液状
のHMDSの収納容器１にN2ガスを供給し、N2ガスのバルブ
により、液状HMDSを気化させ密閉状の処理装置２内に配
置された半導体ウェハ３上に供給している。しかし、こ
の種の処理装置２では、HMDSの供給量、濃度等はN2ガス
の供給量によりコントロールをしていたが十分広い濃度
範囲でHMDS発生濃度コントロールができず、原理的に低
濃度域に限定されていた。そのためウェハの薄膜上に供
給されるHMDSは濃度が希薄でしかも設定しうる濃度の範
囲が狭く、半導体ウェハ３の疎水処理条件が適正でない
ため、レジスト剥離が生じたり、あるいは過剰のHMDSを
供給して無駄になるという欠点があった。[Problems to be Solved by the Invention] As shown in FIG. 5, an HMDS processing apparatus for vapor processing supplies N 2 gas to a liquid HMDS storage container 1 and vaporizes and seals the liquid HMDS by a N 2 gas valve. It is supplied onto a semiconductor wafer 3 arranged in a processing apparatus 2 having a rectangular shape. However, in this type of processing apparatus 2, the supply amount and concentration of HMDS were controlled by the supply amount of N 2 gas, but the HMDS generation concentration could not be controlled in a sufficiently wide concentration range. Was limited to. For this reason, the HMDS supplied on the thin film of the wafer has a low concentration and a narrow range of concentration that can be set, and the hydrophobic treatment condition of the semiconductor wafer 3 is not appropriate, so that resist peeling occurs or excessive HMDS is supplied. And wasted.
本発明は上記の欠点を解消するためになされたもので
あって、半導体ウェハの表面処理を行うにあたり気化さ
れた処理液の適正濃度の気体を過不足なく被処理体上に
供給可能な表面処理装置を提供することを目的とする。The present invention has been made in order to solve the above-mentioned drawbacks, and is a surface treatment capable of supplying a gas having a proper concentration of a vaporized processing solution onto a workpiece without excess or deficiency in performing a surface treatment of a semiconductor wafer. It is intended to provide a device.
［課題を解決するための手段］ 上記の目的を達成するため本発明の表面処理装置は、
所定量の液体のヘキサメチルジシラザンを供給するヘキ
サメチルジシラザン供給系と、ヘキサメチルジシラザン
供給系から供給されるヘキサメチルジシラザンを気化す
る加温手段を備えた気化容器と、ヘキサメチルジシラザ
ンの気体により被処理体の処理が減圧下において行われ
る処理部と、ヘキサメチルジシラザンの気体を処理部へ
導入する配管へヘキサメチルジシラザンの気体に混合さ
れるキャリアガスを混合量を調整して供給するキャリア
ガス供給体とを備えたものである。[Means for Solving the Problems] To achieve the above object, a surface treatment apparatus of the present invention comprises:
A hexamethyldisilazane supply system for supplying a predetermined amount of liquid hexamethyldisilazane, a vaporization vessel provided with a heating means for vaporizing hexamethyldisilazane supplied from the hexamethyldisilazane supply system, The amount of the carrier gas mixed with the hexamethyldisilazane gas is adjusted to the processing unit where the treatment of the object is performed under reduced pressure with the silazane gas and to the pipe that introduces the hexamethyldisilazane gas into the processing unit. And a carrier gas supply that supplies the carrier gas.
［作用］ 本発明の表面処理装置は、気化容器に処理液である液
体のHMDSを定量供給して発生させたHMDSベーパに流量を
コントロールしたキャリアガスを流入し、これにより減
圧した処理部に配置されるウェハの表面上に供給するHM
DSの流量、濃度をコントロールして表面処理を行う。更
に、キャリアガスの流量をコントロールすると共にHMDS
の気化容器に加温手段を設け、HMDSの気化流量を精密に
コントロールすることにより処理液の供給量、濃度の微
調整を行うことが可能になる。[Operation] The surface treatment apparatus of the present invention is configured such that a carrier gas having a controlled flow rate flows into a HMDS vapor generated by quantitatively supplying a liquid HMDS which is a treatment liquid to a vaporization vessel, and is disposed in a treatment unit where the pressure is reduced. HM supplied on the surface of the wafer
Surface treatment is performed by controlling the flow rate and concentration of DS. Furthermore, while controlling the flow rate of the carrier gas, the HMDS
By providing a heating means in the vaporization container and precisely controlling the vaporization flow rate of the HMDS, it becomes possible to finely adjust the supply amount and concentration of the processing liquid.
［実施例］ 本発明の表面処理装置を半導体ウェハ製造のホトレジ
スト処理工程におけるレジスト接着強化処理装置に適用
した一実施例を図面を参照して説明する。[Embodiment] An embodiment in which the surface treatment apparatus of the present invention is applied to a resist adhesion strengthening treatment apparatus in a photoresist treatment step of semiconductor wafer manufacture will be described with reference to the drawings.
第１図に図示のレジスト接着強化処理装置の表面処理
装置20は、処理液供給系であるHMDS供給系11から処理液
である液状のHMDSが一定量供給されるHMDSの気化容器10
が備えられる。気化容器10は一定量供給されたHMDSを気
化するものであり、HMDSの温度を調整するようヒーター
等の加温手段19が具備される。気化容器10は配管12を介
して処理部13が接続され、気化容器10中で気化されたHM
DSが配管12を通って処理部13に導入されるようになって
いる。更に、配管12には、キャリアガス供給体14から供
給されるキャリアガスＣが流入する流入口15が設けられ
る。キャリアガス供給体14はキャリアガスＣの供給量を
コントロールするバルブＶの開閉を調整する調整手段を
有する。The surface treatment apparatus 20 of the resist adhesion strengthening treatment apparatus shown in FIG. 1 includes a HMDS vaporization container 10 in which a fixed amount of liquid HMDS as a treatment liquid is supplied from an HMDS supply system 11 as a treatment liquid supply system.
Is provided. The vaporization container 10 vaporizes the HMDS supplied in a fixed amount, and is provided with a heating means 19 such as a heater so as to adjust the temperature of the HMDS. The processing unit 13 is connected to the vaporization container 10 via a pipe 12, and the HM vaporized in the vaporization container 10.
The DS is introduced into the processing unit 13 through the pipe 12. Further, the pipe 12 is provided with an inflow port 15 into which the carrier gas C supplied from the carrier gas supply unit 14 flows. The carrier gas supply unit 14 has an adjusting means for adjusting the opening and closing of the valve V for controlling the supply amount of the carrier gas C.
キャリアガスＣが混合された気体のHMDSが供給される
処理部13には、載置台16が設けられ、載置台16は被処理
体である半導体ウェハ30が搬入載置される。載置台16上
に載置された半導体ウェハ30の表面全域上に気体状HMDS
が均一に噴出されるよう、半導体ウェハ30に対面して多
数の孔17が穿孔され、温度調節機構を備えた拡散板18が
設けられる。更に、処理部13は減圧装置に接続され、所
望の圧力まで減圧できるようにしたものである。A mounting table 16 is provided in the processing unit 13 to which the HMDS of the gas mixed with the carrier gas C is supplied, and the mounting table 16 carries a semiconductor wafer 30 as an object to be processed. Gaseous HMDS is spread over the entire surface of the semiconductor wafer 30 placed on the mounting table 16.
A large number of holes 17 are formed so as to face the semiconductor wafer 30 so as to be uniformly jetted, and a diffusion plate 18 having a temperature control mechanism is provided. Further, the processing section 13 is connected to a decompression device so that the pressure can be reduced to a desired pressure.
以上のような構成の表面処理装置20の作用を説明す
る。The operation of the surface treatment device 20 configured as described above will be described.
処理部13の載置台16上に図示しない搬送装置により半
導体ウェハ30を搬入載置した後、処理部13を密閉し、減
圧をかける。この減圧をかけることにより、低温で気化
速度を増大させ、低温化を図ることができる。気化容器
10を所望の温度、圧力に調整した後、HMDS供給系11から
所定量の液状のHMDSを気化容器10に供給し、液状HMDSの
気化を促す。HMDSの気化を促すためには加温手段19を作
動させて液状HMDSの気化温度に昇温させ、この温度によ
りHMDSの気化速度を調整する。気化されたHMDSは例えば
１分間0.1〜101が配管12へ送出される。一方、キャリア
ガス供給体14からバルブＶを操作して所望量のキャリア
ガス、例えばN2ガスが供給量をコントロールされて供給
される。キャリアガスＣの供給量は例えば１分間に101
のN2ガスを流入口15より配管12に流入させて、所望のHM
DSの濃度になるようN2ガスを混合させ、この混合気体を
処理部13に供給する。キャリアガスＣとしてはHMDSと反
応しないものならば何れのものでも使用でき、不活性ガ
スのN2ガス等が好適である。処理部13においては、温度
調節機構により所望の温度（例えば20℃）に調整された
拡散板18により、温度調整がなされた混合ガスが、ベー
パもしくはミスト状液状となって、載置台16上の半導体
ウェハ30の全面に噴霧され、半導体ウェハ30上に過不足
なく行き亘る。HMDSの濃度及び流量はHMDSの気化流量と
キャリアガスＣの流量で微妙に調節することができ、半
導体ウェハ30上に形成されるHMDS膜厚を調整することが
できる。即ち、キャリアガスＣを多くするかまたはHMDS
の気化流量を小さくすることにより、半導体ウェハ30上
に形成されるHMDS膜厚は薄くなり、キャリアガスＣを少
くするかまたはHMDSの気化流量を大きくすることにより
HMDS膜は厚くなる。HMDS膜厚は、第２図に示すように、
形成される水滴と半導体ウェハ30とのなす接触角θによ
り、表面処理状況を判別できる。即ち、θが十分大きけ
れば完全な疎水処理がなされていることが確認でき、後
のレジスト塗布工程において、レジスト膜と半導体ウェ
ハとの接着力のコントロールも可能となる。After loading and placing the semiconductor wafer 30 on the mounting table 16 of the processing unit 13 by a transfer device (not shown), the processing unit 13 is sealed and reduced in pressure. By applying this reduced pressure, the vaporization rate can be increased at a low temperature, and the temperature can be reduced. Vaporization container
After adjusting the temperature of 10 to a desired temperature and pressure, a predetermined amount of liquid HMDS is supplied from the HMDS supply system 11 to the vaporization container 10 to promote the vaporization of the liquid HMDS. In order to promote the vaporization of HMDS, the heating means 19 is operated to raise the temperature to the vaporization temperature of liquid HMDS, and the vaporization rate of HMDS is adjusted by this temperature. For example, the vaporized HMDS is sent to the pipe 12 at 0.1 to 101 for one minute. On the other hand, a desired amount of carrier gas, for example, N 2 gas, is supplied from the carrier gas supply unit 14 by operating the valve V with the supply amount controlled. The supply amount of the carrier gas C is, for example, 101 per minute.
N 2 gas into the pipe 12 from the inlet 15 to obtain the desired HM
N 2 gas is mixed so as to have a DS concentration, and the mixed gas is supplied to the processing unit 13. Any carrier gas which does not react with HMDS can be used as the carrier gas C, and N 2 gas as an inert gas and the like are preferable. In the processing section 13, the temperature-adjusted mixed gas becomes a vapor or a mist-like liquid by the diffusion plate 18 adjusted to a desired temperature (for example, 20 ° C.) by the temperature adjusting mechanism, It is sprayed on the entire surface of the semiconductor wafer 30 and spreads over the semiconductor wafer 30 without excess or shortage. The concentration and flow rate of the HMDS can be finely adjusted by the vaporization flow rate of the HMDS and the flow rate of the carrier gas C, and the HMDS film thickness formed on the semiconductor wafer 30 can be adjusted. That is, the carrier gas C is increased or HMDS
The HMDS film thickness formed on the semiconductor wafer 30 is reduced by reducing the vaporization flow rate of the HMDS, and the carrier gas C is reduced or the vaporization flow rate of the HMDS is increased.
The HMDS film becomes thicker. The HMDS film thickness is as shown in FIG.
The surface treatment state can be determined based on the contact angle θ between the formed water droplet and the semiconductor wafer 30. That is, if .theta. Is sufficiently large, it can be confirmed that complete hydrophobic treatment has been performed, and it is also possible to control the adhesive force between the resist film and the semiconductor wafer in the subsequent resist coating step.
また、第３図に示すように、供給されるHMDSの濃度と
アドヒュージョン処理所要時間の関係から、HMDSベーパ
の濃度が高いほど処理時間を短縮することができるた
め、必要最小限の処理時間でアドヒュージョン処理を終
了することができる。Further, as shown in FIG. 3, from the relationship between the concentration of the supplied HMDS and the time required for the adfusion processing, the processing time can be shortened as the concentration of the HMDS vapor increases, so that the processing time can be minimized. The ad fusion process can be terminated.
次に、本発明の他の一実施例について説明する。第４
図に示すように、HMDSの気化容器10Aには、液状のHMDS
を一定量供給するHMDS供給系11と、キャリアガスＣの供
給量を調整するバルブＶ及び配管31を介してキャリアガ
ス供給体14とが共に接続されており、HMDSとキャリアガ
スＣが気化容器10A内に導入される。バルブＶはキャリ
アガスＣの供給量をコントロールする調整手段により開
閉を制御され、キャリアガス供給体14からキャリアガス
Ｃが供給量を調整されて供給されると共に、HMDS供給系
11から液体のHMDSが気化容器10Aに一定量供給され、気
化容器10Aの周囲に設けられる加温手段19により所望の
温度に加熱される。そして、HMDSの気体とキャリアガス
Ｃの混合気体が配管32を通って処理部（図示せず）に供
給される。Next, another embodiment of the present invention will be described. 4th
As shown in the figure, a liquid HMDS
HMDS supply system 11 for supplying a fixed amount of HMDS and carrier gas supply 14 via valve V and piping 31 for adjusting the supply amount of carrier gas C, so that HMDS and carrier gas C are vaporized in vessel 10A. Introduced within. The opening and closing of the valve V is controlled by adjusting means for controlling the supply amount of the carrier gas C, and the supply amount of the carrier gas C is adjusted and supplied from the carrier gas supply unit 14.
A fixed amount of liquid HMDS is supplied from 11 to the vaporization container 10A, and is heated to a desired temperature by the heating means 19 provided around the vaporization container 10A. Then, a mixed gas of the HMDS gas and the carrier gas C is supplied to a processing unit (not shown) through the pipe 32.
なお、この実施例の動作作用・効果等については第１
図に示す一実施例と同等であるためその説明は省略す
る。The operation and effect of this embodiment are described in the first section.
The description is omitted because it is equivalent to the embodiment shown in the figure.
上記実施例では、液状HMDSの気化手段として蒸気圧温
度に設定した例について説明したが、超音波手段により
霧状化させてもよい。また、上記実施例では、HMDSによ
るアドヒュージョン処理工程に適用した例について説明
したが、本発明は、表面被処理体に気化状処理物による
処理であれば何れにも適用できる。In the above embodiment, an example was described in which the vapor pressure of the liquid HMDS was set to the vapor pressure temperature, but the liquid HMDS may be atomized by ultrasonic means. Further, in the above-described embodiment, an example in which the present invention is applied to an adhesion processing step using HMDS has been described. However, the present invention can be applied to any processing using a vaporized material on a surface workpiece.
［発明の効果］ 以上の説明からも明らかなように、本発明の表面処理
装置によれば、HMDSの気化流量とキャリアガスの流量を
調整することによりHMDS濃度の濃度の調整が可能とな
る。従って、広範囲の濃度で均一なHMDS処理を行い、半
導体ウェハ上に形成されるHMDS膜厚をコントロールして
半導体ウェハとレジストの接着力を調整することができ
る。しかもアドヒュージョンに要する処理時間も適正値
に短縮することができるので時間的にも必要最少限で処
理を行うことができるため、半導体ウェハの高精度なパ
ターン形成を短時間で行うことができる。[Effects of the Invention] As is clear from the above description, according to the surface treatment apparatus of the present invention, it is possible to adjust the HMDS concentration by adjusting the vaporization flow rate of the HMDS and the flow rate of the carrier gas. Therefore, uniform HMDS processing can be performed over a wide range of concentrations, and the adhesion between the semiconductor wafer and the resist can be adjusted by controlling the HMDS film thickness formed on the semiconductor wafer. In addition, since the processing time required for ad fusion can be reduced to an appropriate value, the processing can be performed with the minimum necessary in terms of time, so that highly accurate pattern formation on a semiconductor wafer can be performed in a short time.
第１図は本発明の表面処理装置の一実施例を示す構成
図、第２図及び第３図は表面処理方法を説明する図、第
４図は本発明の他の一実施例の要部を示す構成図、第５
図は従来の表面処理方法に係る装置を示す図である。 10……気化容器 12……配管 20……表面処理装置 30……半導体ウェハ（被処理体） 14……キャリアガス供給体 19……加温手段 HMDS……処理液 Ｃ……キャリアガスFIG. 1 is a block diagram showing one embodiment of the surface treatment apparatus of the present invention, FIGS. 2 and 3 are diagrams for explaining a surface treatment method, and FIG. 4 is a main part of another embodiment of the present invention. FIG.
FIG. 1 is a diagram showing an apparatus according to a conventional surface treatment method. 10 Vaporization container 12 Piping 20 Surface treatment device 30 Semiconductor wafer (workpiece) 14 Carrier gas supply 19 Heating means HMDS Treatment liquid C Carrier gas
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−211643（ＪＰ，Ａ) 特開 昭64−45115（ＪＰ，Ａ) 特開 昭62−152529（ＪＰ，Ａ) 特公 昭62−32614（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 G03F 7/11 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-111643 (JP, A) JP-A-64-45115 (JP, A) JP-A-62-152529 (JP, A) 32614 (JP, B2) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/027 G03F 7/11
Claims (1)
供給するヘキサメチルジシラザン供給系と、前記ヘキサ
メチルジシラザン供給系から供給される前記ヘキサメチ
ルジシラザンを気化する加温手段を備えた気化容器と、
前記ヘキサメチルジシラザンの気体により被処理体の処
理が減圧下において行われる処理部と、前記ヘキサメチ
ルジシラザンの気体を前記処理部へ導入する配管へ前記
ヘキサメチルジシラザンの気体に混合されるキャリアガ
スを混合量を調整して供給するキャリアガス供給体とを
備えたことを特徴とする表面処理装置。A hexamethyldisilazane supply system for supplying a predetermined amount of liquid hexamethyldisilazane; and a heating means for vaporizing the hexamethyldisilazane supplied from the hexamethyldisilazane supply system. A vaporization container,
The gas of hexamethyldisilazane is mixed with the gas of hexamethyldisilazane into a processing section where the processing of the object to be processed is performed under reduced pressure and a pipe for introducing the gas of hexamethyldisilazane into the processing section. A carrier gas supply body for supplying a carrier gas by adjusting a mixing amount thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1323214A JP3011728B2 (en) | 1989-12-13 | 1989-12-13 | Surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1323214A JP3011728B2 (en) | 1989-12-13 | 1989-12-13 | Surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03184320A JPH03184320A (en) | 1991-08-12 |
| JP3011728B2 true JP3011728B2 (en) | 2000-02-21 |
Family
ID=18152311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1323214A Expired - Fee Related JP3011728B2 (en) | 1989-12-13 | 1989-12-13 | Surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3011728B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996859A (en) * | 2009-08-24 | 2011-03-30 | 东京毅力科创株式会社 | Hydrophobicizing apparatus, hydrophobicizing method and storage medium |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3102974B2 (en) * | 1993-09-20 | 2000-10-23 | 富士通株式会社 | Method of forming insulating film in semiconductor device |
| JP4655487B2 (en) * | 2004-02-16 | 2011-03-23 | 日立化成工業株式会社 | Adhesive composition, film-like adhesive and circuit connecting material using the same, circuit member connecting structure, and manufacturing method thereof |
| JP4952610B2 (en) * | 2008-02-15 | 2012-06-13 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
| US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
| JP5254120B2 (en) * | 2009-04-22 | 2013-08-07 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP5368393B2 (en) * | 2010-08-05 | 2013-12-18 | 東京エレクトロン株式会社 | Vaporizer, substrate processing apparatus, and coating and developing apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62211643A (en) * | 1986-03-12 | 1987-09-17 | Mitsubishi Electric Corp | Coating method for adhesion intensifying agent |
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1989
- 1989-12-13 JP JP1323214A patent/JP3011728B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996859A (en) * | 2009-08-24 | 2011-03-30 | 东京毅力科创株式会社 | Hydrophobicizing apparatus, hydrophobicizing method and storage medium |
| CN101996859B (en) * | 2009-08-24 | 2015-01-21 | 东京毅力科创株式会社 | Hydrophobicizing apparatus, hydrophobicizing method and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03184320A (en) | 1991-08-12 |
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