JPS62229833A - Photochemical reaction - Google Patents
Photochemical reactionInfo
- Publication number
- JPS62229833A JPS62229833A JP7186786A JP7186786A JPS62229833A JP S62229833 A JPS62229833 A JP S62229833A JP 7186786 A JP7186786 A JP 7186786A JP 7186786 A JP7186786 A JP 7186786A JP S62229833 A JPS62229833 A JP S62229833A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photochemical reaction
- irradiated
- reaction method
- organic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006552 photochemical reaction Methods 0.000 title claims description 19
- 239000007789 gas Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 42
- 239000012044 organic layer Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 abstract description 39
- 239000011347 resin Substances 0.000 abstract description 38
- 229920005989 resin Polymers 0.000 abstract description 38
- 235000012431 wafers Nutrition 0.000 abstract description 38
- 230000008016 vaporization Effects 0.000 abstract description 25
- 238000009834 vaporization Methods 0.000 abstract description 24
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 12
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 17
- 229910052753 mercury Inorganic materials 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000001678 irradiating effect Effects 0.000 description 8
- 239000005416 organic matter Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光化学反応方法に係り、特に基体上の有機物層
の気化、分解処理における分解処理速度を向上させるの
に好適な光化学反応方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photochemical reaction method, and particularly to a photochemical reaction method suitable for improving the decomposition processing speed in vaporizing and decomposing an organic layer on a substrate.
ウェハ上に存在する感光性樹脂を除去するために、種々
の方法が実施されているが、自動化が容易、メンテナン
スが簡単、ウェハの損傷が少ないといった有利な点から
ＵＶオゾン法が注目されている。以下、第９図によりＵ
Ｖオゾン法の１例を説明する。Various methods have been implemented to remove the photosensitive resin present on the wafer, but the UV ozone method is attracting attention because of its advantages such as easy automation, easy maintenance, and less damage to the wafer. . Below, according to Figure 9, U
An example of the V ozone method will be explained.
チャンバ１内にはウェハ３を配置するためのサセプタ２
）サセプタ２を介してウェハ３を加熱するための抵抗式
ヒータ７が設置され、チャンバ１内にガス供給ノズル４
から酸素ガス又は酸素ガス含有ガスを供給した状態でウ
ェハ３上に低圧水銀灯５により紫外光（ＵＶ光）を照射
できるようになっている。低圧水銀灯５は、波長１８５
ｎｍ、および２５４ｎｍの強度の強いものを用いている
。Inside the chamber 1 is a susceptor 2 for placing a wafer 3.
) A resistance type heater 7 is installed to heat the wafer 3 via the susceptor 2, and a gas supply nozzle 4 is installed in the chamber 1.
Ultraviolet light (UV light) can be irradiated onto the wafer 3 by a low-pressure mercury lamp 5 while oxygen gas or oxygen-containing gas is supplied from the wafer 3 . The low pressure mercury lamp 5 has a wavelength of 185
254 nm and 254 nm are used.
この装置でサセプタ２上に感光性樹脂を塗布したウェハ
３を配置し、紫外線を照射すると所定時間経過後にはウ
ェハ３上の感光性樹脂は、ＣＯ２やＨ，Ｏ等になって、
気化、分解して除去される。With this device, a wafer 3 coated with a photosensitive resin is placed on a susceptor 2, and when ultraviolet rays are irradiated, the photosensitive resin on the wafer 3 turns into CO2, H, O, etc. after a predetermined period of time.
It is removed by vaporization and decomposition.
この原理は、感光性樹脂層中の分子結合（例えば、Ｃ−
Ｃ，Ｃ−Ｈ結合）が紫外線のエネルギにより分解する反
応と、酸素に紫外線を照射することにより生成したオゾ
ンや酸素ラジカルが、これらの結合を解かれた炭素原子
や水素原子等と反応し、二酸化炭素や水等を生じる気化
反応とによるものと考えられている。This principle is based on molecular bonds in the photosensitive resin layer (for example, C-
C, C-H bonds) are decomposed by the energy of ultraviolet rays, and ozone and oxygen radicals generated by irradiating oxygen with ultraviolet rays react with carbon atoms, hydrogen atoms, etc. that have broken these bonds. It is thought that this is due to a vaporization reaction that produces carbon dioxide, water, etc.
ここで感光性樹脂の気化分解速度Ｒを大きくするために
は、その原理から明らかなように低圧水銀灯５から照射
される紫外光の照射強度を大きくすることが有効である
。第１０図は気化分解速度Ｒに及ぼす紫外光照射強度！
の影響を示している。Here, in order to increase the vaporization decomposition rate R of the photosensitive resin, it is effective to increase the irradiation intensity of the ultraviolet light irradiated from the low-pressure mercury lamp 5, as is clear from the principle. Figure 10 shows the effect of ultraviolet light irradiation intensity on vaporization decomposition rate R!
It shows the influence of
第１０図から明らかなように紫外光照射強度■を強くす
る従って、気化分解速度Ｒが大きくなることが確かめら
れた。同時に紫外光照射強度■が１００ｗ／ｍ”以上で
は気化分解速度Ｒは飽和状態となり、Ｉ Ｘ １０−”
ｍ／ｓ ｅ ｃ以上の気化分解速度Ｒが得られないこと
が判明した。As is clear from FIG. 10, it was confirmed that as the ultraviolet light irradiation intensity (2) was increased, the vaporization decomposition rate R increased. At the same time, when the ultraviolet light irradiation intensity ■ is 100 w/m" or more, the vaporization decomposition rate R becomes saturated, and I x 10-"
It was found that a vaporization decomposition rate R of m/sec or higher could not be obtained.
この理由は明らかではないが、紫外光照射強度が大きく
なると、反応機構がそれまでの光照射過程律速ではなく
なること、及び感光性樹脂が難分解性物質へ変質するこ
と等が考えられる。The reason for this is not clear, but it is thought that when the intensity of ultraviolet light irradiation increases, the reaction mechanism no longer controls the rate of the light irradiation process, and the photosensitive resin changes into a difficult-to-decompose substance.
本発明の目的は、上記した従来技術の問題点を解消し、
基体上の有機物層を高い気化分解速度で分解処理できる
光化学反応方法を提供することにある。The purpose of the present invention is to solve the problems of the prior art described above,
An object of the present invention is to provide a photochemical reaction method capable of decomposing an organic layer on a substrate at a high vaporization rate.
上記した問題点を解決するために、本発明は、基体上の
有機物層を酸素を含む気体中で加熱すると同時に有機物
層に光源から光を照射して有機物層を酸化、分解する際
に、光源からの有機物層面への光の照射を断続的に行う
ようにしたものである。In order to solve the above-mentioned problems, the present invention provides a method for heating an organic material layer on a substrate in a gas containing oxygen and at the same time irradiating the organic material layer with light from a light source to oxidize and decompose the organic material layer. The organic material layer is irradiated with light intermittently.
有機物層を有する基体を、酸素ガスを含む気体中で加熱
すると同時に光源からの光を断続的に照射すると、光の
照射強度をある程度まで大きくしても有機物の気化分解
速度が飽和することなく、増大する。したがって気体上
の有機物層を短時間で効率よく分解除去できる。When a substrate having an organic substance layer is heated in a gas containing oxygen gas and at the same time is intermittently irradiated with light from a light source, the rate of vaporization and decomposition of the organic substance does not become saturated even if the intensity of light irradiation is increased to a certain degree. increase Therefore, the organic layer on the gas can be efficiently decomposed and removed in a short time.
第１図は、本発明にかかる方法を実施するのに好適な感
光性樹脂分解除去装置の第１の実施例を示す断面図であ
る。第１図において、チャンバ１）内にはサセプタ１２
が配置され、このサセプタ１２の上面にはウェハ１３が
設置されている。サセプタ１２にはヒータ１４が内蔵さ
れるとともに回転軸１５が連結され、この回転軸１５は
モータ１６により回転するようになっている。チャンバ
１）内のウェハ１３の上方に低圧水銀灯１７が設置され
、この低圧水銀灯１７の下方に遮光板１８が配置されて
いる。この遮光板１８は、第２図に示すように円板状に
形成され、遮光板の中心部から周縁部になるにつれて次
第にその幅が拡大され１２個の開口部（スリット）１９
が遮光板１８の中心部から放射状に設けられている。な
お、第１図中、２０は酸素ガス又は酸素を含むガスを供
給するためのガス供給ノズル、２１はガス排気ノズルで
ある。FIG. 1 is a sectional view showing a first embodiment of a photosensitive resin decomposition and removal apparatus suitable for carrying out the method according to the present invention. In FIG. 1, there is a susceptor 12 in the chamber 1).
A wafer 13 is placed on the upper surface of the susceptor 12. The susceptor 12 has a built-in heater 14 and is connected to a rotating shaft 15, which is rotated by a motor 16. A low-pressure mercury lamp 17 is installed above the wafer 13 in the chamber 1), and a light shielding plate 18 is placed below the low-pressure mercury lamp 17. This light shielding plate 18 is formed into a disc shape as shown in FIG.
are provided radially from the center of the light shielding plate 18. In FIG. 1, 20 is a gas supply nozzle for supplying oxygen gas or a gas containing oxygen, and 21 is a gas exhaust nozzle.
第１図および第２図に示す装置において、チャンバ１）
内にガス供給ノズル２０から酸素ガス又は酸素ガスを含
むガスが供給された状態でウェハ１３上の感光性樹脂面
に低圧水銀灯１７からの紫外光が照射される。同時にヒ
ータ１４に通電され、ヒータ１４の加熱によりサセプタ
１２を介してウェハ１３が加熱されるとともにモータ１
６の駆動によりサセプタ１２が回転し、サセプタ１２上
のウェハ１３は円周上に沿って回転する。第２図に示す
遮光板１８には、扇形の開口部１９が形成されているの
で、遮光板１日の半径方向の照射光量が等しくされてい
る。したがって、回転運動するサセプタ１２上のウェハ
１３面上に形成された感光性樹脂の面には、感光性樹脂
の面に断続的に、かつ均一に紫外光が照射される。In the apparatus shown in FIGS. 1 and 2, chamber 1)
The photosensitive resin surface on the wafer 13 is irradiated with ultraviolet light from the low-pressure mercury lamp 17 while oxygen gas or a gas containing oxygen gas is supplied from the gas supply nozzle 20 inside the wafer 13 . At the same time, the heater 14 is energized, and the heating of the heater 14 heats the wafer 13 via the susceptor 12, and the motor 1
6 rotates the susceptor 12, and the wafer 13 on the susceptor 12 rotates along the circumference. Since the light-shielding plate 18 shown in FIG. 2 is formed with a fan-shaped opening 19, the amount of light irradiated on the light-shielding plate in the radial direction in one day is made equal. Therefore, the surface of the photosensitive resin formed on the surface of the wafer 13 on the rotating susceptor 12 is intermittently and uniformly irradiated with ultraviolet light.
ここで第１図および第２図に示す装置において、サセプ
タ１２を６Ｏｒｐｍで回転し、ウェハを１５０℃とした
ときの感光性樹脂の気化分解速度Ｒと平均紫外光照射強
度！との関係を第３図に実線で示す。なお、第３図中の
破線は、遮光板１８を設置しない他は、上記と同様な条
件により操作したとき（従来例）の特性を示している。Here, in the apparatus shown in FIGS. 1 and 2, when the susceptor 12 is rotated at 6 Orpm and the wafer is heated to 150° C., the rate R of vaporization and decomposition of the photosensitive resin and the average ultraviolet light irradiation intensity! The relationship with is shown by the solid line in Figure 3. Note that the broken line in FIG. 3 indicates the characteristics when operated under the same conditions as above (prior art example) except that the light shielding plate 18 is not installed.
第３図から明らかなように、従来例によれば１、紫外光
照射強度■を高くしても感光性樹脂の気化分解速度Ｒが
ｌＸｌ０−”ｍ／ｓｅｃ以上になることなく飽和してい
る。一方、本実施例では、紫外光照射強度！を高くする
に従って気化分解速度Ｒが高くなり、紫外光照射強度■
が２００ｗ／ｍ”において、気化分解速度Ｒが２． １
Ｘ １０−’ｍ７ｓｅｃとなり、従来例の２倍以上の
気化分解速度を得ることができる。As is clear from Fig. 3, according to the conventional example, even if the ultraviolet light irradiation intensity (1) is increased, the vaporization decomposition rate R of the photosensitive resin is saturated without exceeding lXl0-''m/sec. On the other hand, in this example, as the ultraviolet light irradiation intensity ! increases, the vaporization decomposition rate R increases, and the ultraviolet light irradiation intensity !
is 200 w/m'', the vaporization decomposition rate R is 2.1
X 10-'m7 sec, and it is possible to obtain a vaporization decomposition rate that is more than twice that of the conventional example.
第１図および第２図に示す装置において、遮光板１８の
寸法、遮光板１９の開口部の数、開口部面積と遮光部面
積との比（開口率）、サセプタ１２の回転数等は、除去
しようとする感光性樹脂の種類、ウェハ１３に対する加
熱温度、低圧水銀灯１７等の光源の強度等を考慮し、任
意に選定することができる。In the apparatus shown in FIGS. 1 and 2, the dimensions of the light shielding plate 18, the number of openings in the light shielding plate 19, the ratio of the opening area to the light shielding area (aperture ratio), the rotation speed of the susceptor 12, etc. It can be arbitrarily selected in consideration of the type of photosensitive resin to be removed, the heating temperature for the wafer 13, the intensity of the light source such as the low pressure mercury lamp 17, etc.
第４図は、本発明にかかる方法を実施するための感光性
樹脂分解除去装置の第２の実施例を示す断面図である。FIG. 4 is a sectional view showing a second embodiment of a photosensitive resin decomposition and removal apparatus for carrying out the method according to the present invention.
第４図において、ヒータ３１を内蔵するサセプタ３２が
チャンバ３３に固定され、第２図に示す遮光板と同様の
構造の遮光板３４がモータ３５の駆動により回転する回
転軸３６を介して回転する機構となっている点が、第１
の実施例における装置と基本的に異なる。なお、３７は
ウェハ、３８はガス供給ノズル、３９は低圧水銀灯、４
０はガス排気ノズルである。In FIG. 4, a susceptor 32 containing a heater 31 is fixed to a chamber 33, and a light shielding plate 34 having the same structure as the light shielding plate shown in FIG. The first point is that it is a mechanism.
The device is fundamentally different from the device in the embodiment. In addition, 37 is a wafer, 38 is a gas supply nozzle, 39 is a low-pressure mercury lamp, and 4
0 is a gas exhaust nozzle.
第４図において、遮光板３４の回転によりウェハ３７上
の感光性樹脂には断続的に紫外光が照射され、高い気化
分解速度で感光性樹脂を分解除去することができる。特
に本実施例において、回転により発塵の可能性が高く、
比較的重量の大きいサセプタ３２を回転させることなく
、板状の軽重量の遮光板３４を回転させるので発塵を未
然に防止でき、かつモータ３５の容量を小さくできる。In FIG. 4, as the light shielding plate 34 rotates, the photosensitive resin on the wafer 37 is intermittently irradiated with ultraviolet light, and the photosensitive resin can be decomposed and removed at a high vaporization rate. Especially in this example, there is a high possibility of dust generation due to rotation.
Since the light shielding plate 34 is rotated without rotating the relatively heavy susceptor 32, dust generation can be prevented and the capacity of the motor 35 can be reduced.
第５図は、本発明にかかる方法を実施するための感光性
樹脂分解除去装置の第３の実施例を示す断面図である。FIG. 5 is a sectional view showing a third embodiment of a photosensitive resin decomposition and removal apparatus for carrying out the method according to the present invention.
第５図において、ヒータ５１を内鱗するサセプタ５２が
、チャンバ５３の外部に設置されたモータ５４の駆動に
より回転軸５５を介して回転するようになっている。ま
た、第２図の遮光板と同様の構造の遮光板５６がチャン
バ５３の外部に設置されたモータ５７の駆動によす回転
軸５８を介してサセプタ５２と逆方向に回転する機構と
なっている点が第１図に示す装置と基本的に異なる。な
お、５９はウェハ、６０は低圧水銀灯、６１はガス供給
ノズル、６２はガス排気ノズルである。In FIG. 5, a susceptor 52 enclosing a heater 51 is rotated via a rotating shaft 55 by a motor 54 installed outside a chamber 53. As shown in FIG. Further, a light shielding plate 56 having a structure similar to that of the light shielding plate shown in FIG. This is fundamentally different from the device shown in FIG. Note that 59 is a wafer, 60 is a low-pressure mercury lamp, 61 is a gas supply nozzle, and 62 is a gas exhaust nozzle.
本実施例によれば、回転により発塵の可能性の高いサセ
プタ５２の回転数を大きくすることなく、低圧水銀灯６
０からウェハ５９に照射される光の明暗のパルスを大き
くすることができ、気化分解速度を高めることができる
。According to this embodiment, the low-pressure mercury lamp 6 can be used without increasing the rotational speed of the susceptor 52, which is likely to generate dust due to its rotation.
The bright and dark pulses of light irradiated onto the wafer 59 from zero can be increased, and the rate of vaporization and decomposition can be increased.
第６図は、本発明にかかる方法を実施するための感光性
樹脂分解除去装置の第４の実施例を示す断面図である。FIG. 6 is a sectional view showing a fourth embodiment of a photosensitive resin decomposition and removal apparatus for carrying out the method according to the present invention.
第６図において、モータ１０１によって回転するコンベ
ヤ１０２内にヒータ１０３が配置されている。コンベヤ
１０２に上方にはチャンバ１０４が配置され、このチャ
ンバ１０４の天井面には一対の平行な円柱状の低圧水銀
灯１０５が所定の間隔をおいて複数個配置され、これら
の一対の低圧水銀灯１０５より下方で、かつ隣接する一
対の低圧水銀灯１０５の間に板状の遮光板１０６が配置
されている。またチャンバ１０４とコンベヤ１０２との
間にはシール部材１０７が設けられている。なお、１０
８はウェハ、１０９はガス供給ノズル、１）０はガス排
気ノズルである。In FIG. 6, a heater 103 is disposed within a conveyor 102 that is rotated by a motor 101. As shown in FIG. A chamber 104 is arranged above the conveyor 102, and a plurality of parallel cylindrical low-pressure mercury lamps 105 are arranged on the ceiling surface of the chamber 104 at predetermined intervals. A plate-shaped light-shielding plate 106 is arranged below and between a pair of adjacent low-pressure mercury lamps 105 . Further, a sealing member 107 is provided between the chamber 104 and the conveyor 102. In addition, 10
8 is a wafer, 109 is a gas supply nozzle, and 1) 0 is a gas exhaust nozzle.
この装置では、コンベヤ１０２上に所定の間隔をおいて
ウェハ１０８が載置され、コンベヤ１０２の移動に伴い
、チャンバ１０４内で移動する。In this apparatus, wafers 108 are placed on a conveyor 102 at predetermined intervals and are moved within a chamber 104 as the conveyor 102 moves.
チャンバ１０４内にはガス供給ノズル１０９から酸素ガ
ス又は酸素ガスを含むガスが供給され、低圧水銀灯１０
５から紫外光が照射される。ウェハ１０８はコンベヤ１
０２によって移動する際、ヒータ１０３を介して加熱さ
れると同時に逐次光の照射傾城と非照射領域を通過する
。このとき、紫外光の明暗のパルスはコンベヤ１０２の
ｅ ’ＪＪＪ ａ 度により調整される。Oxygen gas or a gas containing oxygen gas is supplied into the chamber 104 from a gas supply nozzle 109, and the low-pressure mercury lamp 10
Ultraviolet light is irradiated from 5. Wafer 108 is conveyor 1
02, it is heated by the heater 103 and at the same time passes successively through the irradiated inclined area and the non-irradiated area. At this time, the bright and dark pulses of the ultraviolet light are adjusted by the e'JJJ a degree of the conveyor 102.
本実施例によれば、ウェハ１０８上の感光性樹脂の除去
操作を一過処理できるため、ウェハ１０８の処理を連続
的に行うことができ、また処理時間の短縮を図ることが
できる。According to this embodiment, since the operation for removing the photosensitive resin on the wafer 108 can be performed in a one-time process, the wafer 108 can be processed continuously, and the processing time can be shortened.
第７図は、本発明にかかる方法を実施するための感光性
樹脂分解除去装置の第５の実施例を示す断面図である。FIG. 7 is a sectional view showing a fifth embodiment of a photosensitive resin decomposition and removal apparatus for carrying out the method according to the present invention.
第７図の装置は、基本的には第６図に示す実施例の装置
と同じであるが、第６図の遮光板１０６の代わりに遮光
ベル）１２１が配設されている。この遮光ベルト１２１
は、第８図に示すようにベルトの長手方向に沿って所定
の間隔をおいて複数個の開口部１２２が設けられている
。The apparatus of FIG. 7 is basically the same as the apparatus of the embodiment shown in FIG. 6, but a light-shielding bell 121 is provided in place of the light-shielding plate 106 of FIG. This light shielding belt 121
As shown in FIG. 8, a plurality of openings 122 are provided at predetermined intervals along the longitudinal direction of the belt.
遮光ベルト１２１はモータ１２３に移動自在に設置され
るとともにこの遮光ベルト１２１内の空間部には遮光ベ
ル）１２１の移動方向に沿って所定の間隔をおいて低圧
水銀灯１２４が設置されている。The light-shielding belt 121 is movably installed on a motor 123, and low-pressure mercury lamps 124 are installed in the space inside the light-shielding belt 121 at predetermined intervals along the moving direction of the light-shielding belt 121.
第７図において、その他の構成部分は第６図に示す装置
と実質的に同じであるので第６図と同一符号で示し、詳
細な説明は省略する。In FIG. 7, other constituent parts are substantially the same as the apparatus shown in FIG. 6, and therefore are designated by the same reference numerals as in FIG. 6, and detailed explanation thereof will be omitted.
第７図に示す装置において、チャンバ１０４内に酸素ガ
ス又は酸素ガスを含むガスが供給された状態でコンベヤ
１０２上のウェハ１０８はヒータ１０３を介して加熱さ
れる。同時に遮光ベルト１２１はモータ１２３により一
定間隔で並設された光源（低圧水銀灯１２４）とウェハ
１０８との間を移動し、ウェハ１０８の面には紫外光が
断続的に照射される。このとき、ウェハ１０８および遮
光ベル）１２１はそれぞれ第７図中、矢印で示すように
互いに反対方向に移動する。In the apparatus shown in FIG. 7, a wafer 108 on a conveyor 102 is heated via a heater 103 while oxygen gas or a gas containing oxygen gas is supplied into a chamber 104. At the same time, the light shielding belt 121 is moved by a motor 123 between the light sources (low-pressure mercury lamps 124) arranged in parallel at regular intervals and the wafer 108, and the surface of the wafer 108 is intermittently irradiated with ultraviolet light. At this time, the wafer 108 and the light shielding bell 121 move in opposite directions as shown by arrows in FIG.
本実施例によれば、光の明暗のパルスを、コンベヤ１０
２の移動速度を変えることなく変化させることができ、
最適なパルス数を選択することができる。According to this embodiment, the bright and dark pulses of light are transmitted to the conveyor 10.
You can change the movement speed of 2 without changing it,
The optimal number of pulses can be selected.
第１図、第４図〜第７図に示す装置による光化学反応方
法では、紫外光をウェハ面上の感光性樹脂に対して断続
的に照射することにより感光性樹脂の気化分解速度Ｒが
飽和することなく増大する。In the photochemical reaction method using the apparatus shown in Figures 1 and 4 to 7, the photosensitive resin on the wafer surface is intermittently irradiated with ultraviolet light to saturate the vaporization rate R of the photosensitive resin. It increases without increasing.
この理由は、詳細には明らかではないが次の２点が考え
られる。The reason for this is not clear in detail, but the following two points can be considered.
（１）紫外光を連続的に照射する従来の方法では、紫外
光照射強度■が１００ｗ／ｒｒｒ以上では反応機構が光
照射過程律速ではなくなり、過剰な光の照射により感光
性樹脂が変質し、難分解除去性のものになる。一方、紫
外光を断続的に照射する方法では光の照射を必要な量に
抑えるために感光性樹脂の変質を防止できる。(1) In the conventional method of continuously irradiating ultraviolet light, when the ultraviolet light irradiation intensity (■) exceeds 100 W/rrr, the reaction mechanism is no longer rate-limiting in the light irradiation process, and the photosensitive resin changes in quality due to excessive light irradiation. It becomes difficult to remove. On the other hand, in the method of intermittently irradiating ultraviolet light, deterioration of the photosensitive resin can be prevented because the irradiation of light is suppressed to the required amount.
（２）紫外光照射強度Ｉが１００ ｗ／ｍ以上では反応
生成物のウェハ面からの脱離過程が律速になると考えら
れる。しかし、紫外光を連続的に照射する従来の方法で
は１、この際の過剰な光の照射は、反応生成物の再反応
を招く。この結果、感光性樹脂の分解のための反応活性
点が減少し、全体としての分解反応速度を低下させるも
のと考えられる。一方、紫外光を断続的に照射する方法
では、光がウェハ面に対して照射されない時に反応生成
物の脱離過程のみが促進され、分解反応のための反応活
性点の減少を防止できるものと考えられる。(2) When the ultraviolet light irradiation intensity I is 100 w/m or more, it is thought that the process of desorption of reaction products from the wafer surface becomes rate-determining. However, in the conventional method of continuously irradiating ultraviolet light 1, excessive light irradiation causes re-reaction of the reaction products. As a result, the number of active sites for decomposition of the photosensitive resin decreases, which is thought to reduce the overall decomposition reaction rate. On the other hand, in the method of intermittently irradiating ultraviolet light, only the desorption process of reaction products is promoted when the wafer surface is not irradiated with ultraviolet light, which prevents the reduction of reaction active sites for decomposition reactions. Conceivable.
したがって、第３図に示す試験結果では紫外光照射強度
Ｉが２００ ｗ／ｒｒｉ付近までの感光性樹脂の気化分
解速度Ｒを示しているが、上記のような反応機構から、
適当な遮光板形状およびサセプタ回転数等を選択するこ
とにより紫外光照射強度Ｉを２００００ｗ／ｎｌ程度ま
で大きくすることによって感光性樹脂の気化分解速度Ｒ
を向上できることが推察される。Therefore, the test results shown in FIG. 3 show the vaporization decomposition rate R of the photosensitive resin when the ultraviolet light irradiation intensity I reaches around 200 w/rr, but due to the reaction mechanism described above,
By increasing the ultraviolet light irradiation intensity I to about 20,000 w/nl by selecting an appropriate light shielding plate shape, susceptor rotation speed, etc., the vaporization decomposition rate R of the photosensitive resin can be increased.
It is inferred that it is possible to improve the
このような効果は、感光性樹脂の分解に限らず、他の高
分子化合物およびその他の有機物の分解おいても同様に
期待できる。したがって、例えば基体上のワックス等の
分解除去にも本発明を適用することができる。Such effects can be expected not only in the decomposition of photosensitive resins but also in the decomposition of other polymeric compounds and other organic substances. Therefore, the present invention can also be applied to, for example, decomposition and removal of wax on a substrate.
また、基体上の有機物は必ずしも層状に形成されている
場合に限らず、基体上にランダムに点在する場合にもそ
の有機物が酸素ガスを含む気体中で加熱されると同時に
その有機物に断続的に光が照射されることによって有機
物の気化分解速度を向上させることができる。この方法
は、特に気体上に点在する有機物の所謂表面洗浄に対し
て適用でき、洗浄時間の短縮を図ることができる。In addition, the organic matter on the substrate is not necessarily formed in a layered manner, but even when it is randomly scattered on the substrate, when the organic matter is heated in a gas containing oxygen gas, the organic matter is intermittently By irradiating the organic matter with light, the rate of vaporization and decomposition of organic matter can be improved. This method is particularly applicable to so-called surface cleaning of organic matter scattered on a gas, and can shorten the cleaning time.
上記した実施例では、特に光源として低圧水銀灯を例示
したが、使用される光源は紫外光領域の光を照射できる
ものであればとくに制約はない。In the embodiments described above, a low-pressure mercury lamp was particularly used as a light source, but there are no particular restrictions on the light source used as long as it can emit light in the ultraviolet region.
さらに気体上の有機物を加熱する手段は、サセプタを介
して加熱する方法に限らず、サセプタの有機物が所定の
温度に維持できる方法であればよい。Further, the means for heating the organic substance in the gas is not limited to the method of heating via the susceptor, and any method may be used as long as the organic substance in the susceptor can be maintained at a predetermined temperature.
なお、紫外光を断続的に照射することにより光化学反応
方法によって基板上に薄膜を形成する手段は既に提案さ
れている（特開昭５９−２２４１）８号）。しかし、こ
の方法は光の照射から非照射に至る瞬間での非平衡状態
における気相反応速度の向上させるものであって、基体
上の有機物に対して光の照射時に進行する反応と非照射
時に進行する反応とを整合させること、および光の過剰
照射による除去対象物の変質を防止する本発明と本質的
に異なるものである。Note that a method of forming a thin film on a substrate by a photochemical reaction method by intermittently irradiating ultraviolet light has already been proposed (Japanese Patent Laid-Open No. 59-2241 No. 8). However, this method improves the gas phase reaction rate in a non-equilibrium state at the moment from light irradiation to non-irradiation, and the reaction that progresses to organic matter on the substrate during light irradiation and the reaction that progresses during non-irradiation. This is essentially different from the present invention, which involves matching the progressing reaction and preventing deterioration of the object to be removed due to excessive irradiation with light.
以上のように本発明によれば、基体上に存在する有機物
を短時間で、かつ効率よく分解除去することができる。As described above, according to the present invention, organic substances present on a substrate can be decomposed and removed efficiently in a short time.
第１図は、本発明にかかる光化学反応方法を実施するた
めの感光性樹脂分解除去装置の第１の実施例を示す断面
図、第２図は第１図における遮光板を示す平面図、第３
図は第１図に示す装置を用いた方法により感光性樹脂を
分解させたときの気化分解速度Ｒと紫外光照射強度■と
の関係を示すグラフ、第４図は本発明にかかる光化学反
応方法を実施するための感光性樹脂分解除去装置の第２
の実施例を示す断面図、第５図は本発明にかかる光化学
反応方法を実施するための感光性樹脂分解除去装置の第
３の実施例を示す断面図、第６図は本発明にかかる光化
学反応方法を実施するための感光性樹脂分解除去装置の
第４の実施例を示す断面図、第７図は本発明にかかる光
化学反応方法を実施するための感光性樹脂分解除去装置
の第５の実施例を示す断面図、第８図は第７図における
遮光ベルトを示す平面図、第９図は従来の感光性樹脂分
解除去！置を示す断面図、第１０図は従来の感光性樹脂
分解除去装置を用いた方法により感光性樹脂を分解させ
たときの気化分解速度Ｒと紫外光照射強度■との関係を
示すグラフである。
１）．３３．５３．１０４・・・・・・チャンバ、１２
．３２．５２・・・・・・サセプタ、１３．３７．５９
．１０８・・・・・・ウェハ、１４．３１．５１．１０
３・・・・・・ヒータ、１６．３５．５４．５７．１０
１．１２３・・・・・・モータ、
１７．３９．６０．１０５．１２４
・・・・・・低圧水 銀灯、
１８．３４．５６．１０６・・・・・・遮光板、１２４
・・・・・・遮光ベルト、FIG. 1 is a sectional view showing a first embodiment of a photosensitive resin decomposition and removal device for carrying out the photochemical reaction method according to the present invention, and FIG. 2 is a plan view showing a light shielding plate in FIG. 3
The figure is a graph showing the relationship between the vaporization decomposition rate R and the ultraviolet light irradiation intensity ■ when a photosensitive resin is decomposed by the method using the apparatus shown in Figure 1, and Figure 4 is a photochemical reaction method according to the present invention. The second part of the photosensitive resin decomposition and removal equipment for carrying out
FIG. 5 is a sectional view showing a third embodiment of a photosensitive resin decomposition and removal device for carrying out the photochemical reaction method according to the present invention, and FIG. A sectional view showing a fourth embodiment of the photosensitive resin decomposition and removal apparatus for carrying out the reaction method, and FIG. 7 shows a fifth embodiment of the photosensitive resin decomposition and removal apparatus for carrying out the photochemical reaction method according to the present invention. A sectional view showing an embodiment, FIG. 8 is a plan view showing the light-shielding belt in FIG. 7, and FIG. 9 is a conventional photosensitive resin decomposition and removal! Fig. 10 is a graph showing the relationship between the vaporization decomposition rate R and the ultraviolet light irradiation intensity (■) when photosensitive resin is decomposed by a method using a conventional photosensitive resin decomposition and removal device. . 1). 33.53.104...Chamber, 12
．． 32.52...Susceptor, 13.37.59
．． 108...Wafer, 14.31.51.10
3... Heater, 16.35.54.57.10
1.123... Motor, 17.39.60.105.124... Low pressure mercury lamp, 18.34.56.106... Light shielding plate, 124
...shading belt,
Claims (8)
置し、前記有機物層を加熱すると同時にその有機物層に
光源から光を照射して有機物層を酸化、分解させる光化
学反応方法において、前記光源から有機物層への光の照
射が断続的に行われることを特徴とする光化学反応方法
。(1) A photochemical reaction method in which a substrate on which an organic layer exists is placed in a gas containing oxygen, and the organic layer is heated and simultaneously irradiated with light from a light source to oxidize and decompose the organic layer. A photochemical reaction method characterized by intermittent irradiation of light from a light source to an organic layer.
基体上の有機物層との間に遮光体を設け、該遮光体によ
り形成される照射領域と非照射領域との間を有機物層を
有する基体が移動することを特徴とする光化学反応方法
。(2) In claim (1), a light shield is provided between the light source and the organic layer on the substrate, and an organic layer is provided between the irradiated area and the non-irradiated area formed by the light shield. A photochemical reaction method characterized in that a substrate having a structure moves.
有する基体は固定された基台上に載置され、その有機物
層面に前記光源からの光の照射領域と非照射領域とを交
互に形成させることを特徴とする光化学反応方法。(3) In claim (1), a substrate having an organic material layer is placed on a fixed base, and a region irradiated with light from the light source and a region not irradiated are alternately arranged on the surface of the organic material layer. A photochemical reaction method characterized by forming.
回転自在に設けられた基台上に載置され、その基体と光
源との間にスリットが形成された遮光体が配置されてい
ることを特徴とする光化学反応方法。(4) In claim (2), the base body is placed on a rotatably provided base, and a light shielding body having a slit is disposed between the base body and the light source. A photochemical reaction method characterized by:
一方向に所定の間隔をおいて複数個並設され、該光源の
並設方向と平行して移動自在にコンベヤを設置し、該コ
ンベヤ上に有機物層を有する基体を設置することを特徴
とする光化学反応方法。(5) In claim (2), a plurality of the light sources are arranged in parallel at predetermined intervals in one direction, and a conveyor is installed movably in parallel to the direction in which the light sources are arranged in parallel; A photochemical reaction method characterized in that a substrate having an organic layer is placed on the conveyor.
光源との間にスリットが形成された円盤状の遮光体を回
転自在に設け、該遮光体の回転動作により基体上の有機
物層に光の照射領域と非照射領域とを交互に形成させる
ことを特徴とする光化学反応方法。(6) In claim (3), a disc-shaped light shielding member having a slit formed therein is rotatably provided between the base body and the light source, and the rotational movement of the light shielding member causes the organic substance layer on the base body to be A photochemical reaction method characterized by forming alternately light irradiated areas and non-irradiated areas.
光体が円盤状に形成されるとともにその中心部から放射
状に複数個のスリットが設けられ、各々のスリットは遮
光体の周縁部側になるにつれて次第にその幅が広くされ
、前記回転自在に設けられた基台上の基体は基台の回転
軸に対して放射状に配置され、前記遮光体と前記基台と
の回転方向を互いに逆方向とすることを特徴とする光化
学反応方法。(7) In claim (4), the light shielding body is formed into a disc shape, and a plurality of slits are provided radially from the center thereof, and each slit is located on the peripheral edge side of the light shielding body. The width of the light shielding body is gradually increased as the width increases, and the base body on the rotatably provided base is arranged radially with respect to the rotation axis of the base, and the rotation directions of the light shielding body and the base are opposite to each other. A photochemical reaction method characterized by a direction.
の光源は、ベルトの移動方向に沿って所定の間隔をおい
てスリットが形成されたベルト内に配置され、該ベルト
の移動方向と、前記コンベヤの移動方向を互いに逆方向
とすることを特徴とする光化学反応方法。(8) In claim (5), the plurality of light sources are arranged within a belt in which slits are formed at predetermined intervals along the moving direction of the belt; and a photochemical reaction method, characterized in that the moving directions of the conveyors are opposite to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7186786A JPS62229833A (en) | 1986-03-29 | 1986-03-29 | Photochemical reaction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7186786A JPS62229833A (en) | 1986-03-29 | 1986-03-29 | Photochemical reaction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62229833A true JPS62229833A (en) | 1987-10-08 |
Family
ID=13472893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7186786A Pending JPS62229833A (en) | 1986-03-29 | 1986-03-29 | Photochemical reaction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62229833A (en) |
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| JP2007118001A (en) * | 2005-10-26 | 2007-05-17 | Cryovac Inc | Method and apparatus for controlled triggering of oxygen scavenging composition utilizing wrap-around shade |
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| JP2017529236A (en) * | 2014-07-25 | 2017-10-05 | 北京泊菲莱科技有限公司 | Light irradiation multi-sample parallel reaction device |
| US9835388B2 (en) | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
| US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
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-
1986
- 1986-03-29 JP JP7186786A patent/JPS62229833A/en active Pending
Cited By (35)
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| JPH02315A (en) * | 1987-11-28 | 1990-01-05 | Dainippon Screen Mfg Co Ltd | Eliminating and washing method for resist of substrate |
| JPH0346225A (en) * | 1989-07-13 | 1991-02-27 | Nec Corp | Resist ashing device |
| US8080212B2 (en) | 2004-05-21 | 2011-12-20 | Cryovac, Inc. | Method and apparatus for high speed activation of oxygen scavenging compositions |
| US7807111B2 (en) | 2004-05-21 | 2010-10-05 | Cryovac, Inc. | Method and apparatus for high speed activation of oxygen scavenging compositions |
| US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
| US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
| US8137465B1 (en) * | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
| US9384959B2 (en) | 2005-04-26 | 2016-07-05 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
| US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
| US10121682B2 (en) | 2005-04-26 | 2018-11-06 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
| US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
| US8951348B1 (en) | 2005-04-26 | 2015-02-10 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
| US9873946B2 (en) | 2005-04-26 | 2018-01-23 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
| JP2007118001A (en) * | 2005-10-26 | 2007-05-17 | Cryovac Inc | Method and apparatus for controlled triggering of oxygen scavenging composition utilizing wrap-around shade |
| US8026493B2 (en) | 2005-10-26 | 2011-09-27 | Cryovac, Inc. | Method and apparatus for controlled triggering of oxygen scavenging compositions utilizing a wrap-around shade |
| US9073100B2 (en) | 2005-12-05 | 2015-07-07 | Novellus Systems, Inc. | Method and apparatuses for reducing porogen accumulation from a UV-cure chamber |
| US11177131B2 (en) | 2005-12-05 | 2021-11-16 | Novellus Systems, Inc. | Method and apparatuses for reducing porogen accumulation from a UV-cure chamber |
| US10020197B2 (en) | 2005-12-05 | 2018-07-10 | Novellus Systems, Inc. | Method for reducing porogen accumulation from a UV-cure chamber |
| US8398816B1 (en) | 2006-03-28 | 2013-03-19 | Novellus Systems, Inc. | Method and apparatuses for reducing porogen accumulation from a UV-cure chamber |
| US8273670B1 (en) | 2006-12-07 | 2012-09-25 | Novellus Systems, Inc. | Load lock design for rapid wafer heating |
| US8920162B1 (en) | 2007-11-08 | 2014-12-30 | Novellus Systems, Inc. | Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation |
| US8426778B1 (en) | 2007-12-10 | 2013-04-23 | Novellus Systems, Inc. | Tunable-illumination reflector optics for UV cure system |
| US8283644B2 (en) | 2008-01-08 | 2012-10-09 | Novellus Systems, Inc. | Measuring in-situ UV intensity in UV cure tool |
| US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
| US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| US10037905B2 (en) | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
| US8851463B2 (en) | 2011-04-13 | 2014-10-07 | Novellus Systems, Inc. | Pedestal covers |
| US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
| US9835388B2 (en) | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
| JP2017529236A (en) * | 2014-07-25 | 2017-10-05 | 北京泊菲莱科技有限公司 | Light irradiation multi-sample parallel reaction device |
| US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
| US11270896B2 (en) | 2015-11-16 | 2022-03-08 | Lam Research Corporation | Apparatus for UV flowable dielectric |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| US11075127B2 (en) | 2016-08-09 | 2021-07-27 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
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