JPH09312257A - Fine processing method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the evenness of the surface of a substrate to be treated and the adhesion between the substrate and a thin film by a method wherein monochromatic light of a specified half-width or narrower is entire surface- irradiated on the substrate to be treated prior to or subsequent to the formation of a microscopic pattern in the wavelength of a vacuum ultraviolet region from far ultraviolet rays. SOLUTION: First, monochromatic light 27 of a half-width of 30nm or narrower is irradiated on the entire surface of a substrate applied with a first layer resist film 26 in the wavelength of a vacuum ultraviolet region from far ultraviolet rays to modify the surface layer of the substrate. Then, a second layer resist film 29 is formed on the film 26 and the films 26 and 29 are selectively exposed with light 30 of a prescribed pattern to form photosensitized parts 31 and 32. A developing is performed to form a resist pattern of a shape that a first layer resist pattern 26' is bitten into the under part of a second layer resist pattern 29' and after a third film 33 is formed on this resist pattern, a third film pattern 33' equivalent to a terminal is obtained by a treatment using a developing solution.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microfabrication technique which is important in manufacturing a large scale integrated circuit (LSI), a magnetoresistive effect (MR) head, a photomask, a liquid crystal display (LCD), a PDP, an MCM and the like. . More specifically, the present invention relates to a technique for improving the reliability of microfabrication technology used in these manufacturing processes, and particularly to a substrate processing method including a step of irradiating a substrate to be processed with a specific monochromatic short wavelength light, and a specific monochromatic short wavelength. The present invention relates to an irradiation device having a mechanism for irradiating light on the entire surface, or a method for manufacturing a multi-layer structure device or the like using these methods and devices. More specifically, a thin film forming method capable of improving the adhesion of a film, a multilayer resist pattern forming method capable of improving the shape of a resist pattern and simplifying the steps, a coating and developing related apparatus for realizing the same, and these methods. The present invention relates to a method for manufacturing a multi-layer structure device such as a semiconductor element and a magnetic head element using an apparatus.

[0002]

2. Description of the Related Art Thin film forming technology and photolithography technology (lithography), etc. are used for the manufacture of semiconductor integrated circuits (ICs), multi-layered devices such as magnetic heads, and the formation of photomasks used in the manufacture of such devices. The microfabrication technologies of the above are widely used, and the progress of these technologies makes the devices more and more miniaturized. For semiconductors, large-scale integrated circuits (LSI), VLS
Integrated circuits such as I and ULSI have come into practical use.

As an example of a fine processing technique in manufacturing these integrated circuits, in terms of wiring technique, fine wiring is formed by utilizing etching or lift-off.

In the etching method, a) a thin film made of a wiring forming material is formed on a substrate to be processed, b) a photosensitive material called a resist is coated on the thin film, and c) visible light is applied to the resist. By selectively irradiating ultraviolet rays, far ultraviolet rays, or X-rays through a mask of a predetermined pattern for exposure, or by directly drawing with an electron beam with a narrowed irradiation diameter, the dissolution characteristics of the resist material are selectively changed. Then, d) a resist pattern is formed by development, e) a fine wiring pattern is formed by wet etching or dry etching using this resist pattern, and f) the resist is removed by oxygen plasma ashing or wet treatment.

In the lift-off method, 1) a resist pattern is formed on the substrate to be processed by the same method as in b to d, 2) a thin film of a wiring forming material is formed by vapor deposition or a sputtering method, and 3) a stripping solution is used. The resist pattern is removed together with the wiring material thin film thereon, and the wiring pattern is formed by leaving the wiring material only in the portions where there is no resist.

[0006]

[Problems to be Solved by the Invention] In order to manufacture each device which becomes finer and more complicated in the future by the above-mentioned fine processing technology, the reliability (yield) of each process is improved and the process is improved. Shorter time (improvement of throughput)
Is more strongly demanded. For this reason, the following items are important.

(1) Technique for forming multi-layered thin film having high adhesion (2) High precision pattern forming technique

Further, the high precision forming technique of this pattern includes the following matters. a) Multi-layer resist method using dry etching b) Multi-layer resist method using wet etching c) Chemically-amplified resist shape improvement method d) Residual removal and ashing method after resist development e) Micro-bubble removal method during resist development f) Prevention of burrs in the lift-off process and stabilization of dimensional accuracy

The outline of each item and each problem will be described below.

[0010] 1. Technique for forming multi-layered thin film with high adhesiveness When forming a thin film, the adhesiveness between upper and lower films (or layers) in contact with each other is important. Therefore, the conductive film and the insulating film, or one of them and the resist Ensuring adhesion with the film is important for improving manufacturing yield and device reliability. Conventionally, in order to improve the adhesion between the conductive film and the insulating film, a treatment such as removing the organic impurities on the surface or oxidizing the surface by a method such as ultraviolet cleaning using a mercury lamp, ozone cleaning, or oxygen plasma processing. However, there are problems that the process becomes complicated and it takes time.

With the recent increase in device density,
The requirements regarding the characteristics of the materials used for the conductive layer and the insulating layer are becoming stricter. Therefore, more material types than ever have been studied, and it has become more and more difficult to improve the adhesion between the materials. For example, for interlayer insulating materials, the use of low dielectric constant materials containing fluorine has been investigated (for example, Chiu H. Ting et al., Materials Reseach Soc. Sy.
mposium Proc., 381, p.3 (1995)), however, fluorine-based materials generally have poor adhesion to other materials, and conventional surface treatment methods require time and labor for processing and have sufficient adhesion. It is not obtained, which is a problem.

2. High-precision pattern formation technology a) Multi-layer resist method using dry etching In manufacturing a multi-layered device, a conventional single-layer resist method is used due to the influence of the step on the substrate surface and the reflection of light used for exposure from the substrate surface. In that case, it becomes difficult to form a fine pattern with high accuracy. Therefore, a multi-layer resist method has been developed as a solution to this problem. This multilayer resist method includes a two-layer resist method and a three-layer resist method. In the two-layer resist method, a first-layer organic polymer is spin-coated on a substrate, and a second polymer of high oxygen plasma resistance is formed on the first-layer organic polymer.
Forming a layer, exposing and developing the second layer to pattern,
The pattern of this second layer is transferred to the first layer by oxygen plasma, and the substrate is processed using the patterns of both layers as a mask. On the other hand, in the three-layer resist method, a first-layer organic polymer is spin-coated on a substrate, a second layer of a polymer having high oxygen plasma resistance is formed thereon, and a third-layer photosensitive resin layer is further formed thereon. After forming and patterning the third layer by exposure and development, this is transferred to the second layer, which is then exposed to oxygen plasma for the first time.
Then, the pattern is transferred to a layer, and the substrate is processed by using the three-layer pattern as a mask.

Lower layer (first layer) of these multilayer resist methods
The material used for (1) is required to have resistance to a coating solvent and a developing solution used for the upper layer, and therefore, it is generally used by being crosslinked by heating. However, when removing the resist after processing the substrate (after forming the pattern of the underlayer of the multilayer resist), there is a problem that the wet removal cannot be performed because the first layer is cured.

B) Multilayer resist method using wet etching A method of performing the above-mentioned multilayer resist method only by exposure and wet development processing (exposure-PCM (exposure-PCM) method (Lin, BJS
PIE, 174, 114, 1979)) is also being considered. This is a method in which after patterning the upper layer, the lower layer is exposed to light using the upper layer resist as a mask, and a two-layer pattern is formed by wet development. However, the low-pressure mercury lamp that is usually used in the lower layer exposure process is widely used because it is difficult to select the material for the upper layer and the lower layer because it has a wide range of wavelength light due to a plurality of bright lines and the exposure time is long. Has not reached.

C) Method for Improving Shape of Chemically Amplified Resist In recent years, a chemically amplified resist (for example, H. Itoh et al., ACS Symposium Series,
No.242, 11 (1984)) is being considered. The chemically amplified resist is a general term for resists in which a reaction proceeds with an acid generated from a photoacid generator (PAG) as a catalyst in an exposed portion. However, in chemically amplified resist, the acid generated from the photo-acid generator is deactivated at the interface with the substrate when an alkaline component is present on the surface of the substrate, and in the case of a positive type resist, the pattern has a skirted shape, which is a problem. . The substrate on which this phenomenon occurs is hexamethyldisilazane (HM
DS) coated substrate, a substrate containing TiN, SiON or SiN formed of a nitrogen-containing material (for example, Kimura et al., Proceedings of the 56th SPSJ Academic Conference 28a-ZS-11 (1995)), and Insulating film using polysilazane resin as starting material (eg Nakata et al., Proceedings of the 42nd Joint Lecture of Japan Society of Applied Physics 30aC7 (1
995)) is a film-formed substrate. In order to suppress this acid deactivation phenomenon, it has been proposed that the substrate surface is treated with oxygen plasma or acid treatment (for example,
Watanabe et al., Proceedings of 56th Annual Meeting of the Japan Society of Applied Physics 26p-ZS-5
(1995)). However, such a process is time-consuming and is not a fundamental solution.

The deactivation of the acid also occurs due to the alkaline component in the atmosphere. In this case, the pattern of the positive type resist has a T-top shape (the resist surface layer portion laterally overhangs in the longitudinal section of the formed resist pattern, There is a problem that the bottom part becomes thin (for example,
E. Yano et al, Proc. Of SPIE, Vol.2438, 551 (199
Five)). In order to suppress this, forming a protective film on the resist surface and controlling the environment around the resist process have been studied (for example, A. Oikawa et al., Proc.
of SPIE, Vol. 2438, 599 (1995)). However, such a measure causes complication of the process and equipment, which is a problem.

D) Residue removal after resist development and highly reliable ashing method Oxygen plasma treatment is usually used for residue removal after resist development and resist ashing. However, since the plasma process is performed in a vacuum chamber, the process takes time and poses a problem. In addition, in forming a gate oxide film of a logic LSI, which has been thinned in recent years, the gate oxide film is damaged by charging (charge-up) by plasma during ashing, and the yield of the LSI is reduced, which is a problem. .

E) Method for removing microbubbles during resist development Most resist processes currently used in the manufacture of various devices include a step of developing a resist made of an organic resin with an aqueous alkaline solution. In this case, since the resist film is generally water-repellent, it is poorly compatible with the alkaline aqueous solution which is the developing solution, and air bubbles (micro bubbles) adhere to the resist surface at the time of development, causing poor development,
It is a problem. In order to solve this, suppression of water repellency by devising a surfactant in the resist has been studied, but the effect is not sufficient.

F) Method of Preventing Burrs from Occurring in the Lift-Off Process and Stabilizing the Dimensional Accuracy Lift-off is a process that is currently widely used in the manufacture of magnetic heads. FIG. 1 is a perspective view of an MR element portion of a magnetoresistive (MR) type head, and terminals (electrodes) 12 for flowing a sense current are connected to both ends of an MR element 11. The joint between the MR element 11 and the terminal 12 is
It is very important not only for making electrical connection but also for determining the core width W of the MR element that defines the sense region. A lift-off process using a photoresist is usually applied to the manufacturing process of the MR element part.

When a normal single-layer photoresist is used as a mask when forming a terminal in the manufacture of an MR element part, the film wraps around the resist side surface when forming a terminal thin film by the sputtering method, which causes a problem that burrs occur. . In order to reduce the occurrence of this burr, a method is known in which the shape of the photoresist is inversely tapered (a shape in which the lower portion (bottom portion) is thinner than the upper portion (surface portion) in the vertical cross section of the patterned resist film). ing. However, with this method, it is difficult to control the shape, and the margin of the pattern dimension becomes narrow,
There is a problem that the core width varies. Further, a method has been proposed in which the resist has a two-layer structure and a two-layer resist pattern having a shape in which the lateral width of the lower layer is smaller than that of the upper layer is used. The resist pattern formed by this method is more stable than the resist pattern formed by the method of forming the inverse taper pattern, but it takes a long time to form the pattern because the process is complicated, and the upper layer pattern width is the minimum. When the dimension is 2 μm or less, the width dimension of the lower layer is in the submicron order, and it becomes difficult to control the dimension (core width) and the shape. In particular, with the recent increase in recording density of magnetic disk devices, miniaturization of the core width has been progressing, and therefore, improvement of reliability of this process has become a major issue.

The present invention is intended to solve these various problems, that is, the uniformity of the surface of the substrate to be processed can be improved easily and effectively in a short time, whereby the film between the substrate and various thin films can be improved. It is an object of the present invention to provide a method and an apparatus capable of improving the adhesion of the resist film, preventing the development failure of the resist film, and improving the pattern shape thereof.

[0022]

The above-mentioned problems are caused by monochromatic light having a half width of 30 nm or less at a wavelength in the range from far ultraviolet to vacuum ultraviolet on the substrate to be processed before or after forming the fine pattern. It can be solved by a fine processing method including a processing step. As a result of earnest studies by the inventors, the irradiation of monochromatic light in this wavelength region has a surprisingly high efficiency as compared with the conventional mercury lamp irradiation, and changes in their molecular structure due to the mechanism of oxidation and decomposition of organic substances on the substrate surface. This makes it possible to remove organic contaminants on the substrate surface, or to reduce the solubility of organic materials such as resist films, insulating films, and conductive films, polarity changes, molecular weight changes, and gasification with a simple process. I have found what I can do in time. The light source used here is Ar ₂ excimer light (wavelength 126 nm),
Kr ₂ excimer light (146 nm), F ₂ excimer light (153 nm), ArBr
Excimer light (165 nm), Xe ₂ excimer light (172 nm), ArCl excimer light (175 nm), ArF excimer light (193 nm), KrBr excimer light (207 nm), KrCl excimer light (222 nm), KrF excimer light Light (248 nm) or the like can be preferably used. The conditions such as the irradiation amount of the excimer light, the irradiation atmosphere, and the temperature at the time of irradiation can be appropriately changed depending on the processing purpose of the substrate to be processed and the absorption characteristics and sensitivity characteristics of the irradiation object on the substrate surface.

The apparatus used for carrying out the method of the present invention is ± 15% of monochromatic light having a half width of 30 nm or less at a wavelength in the range from far ultraviolet to vacuum ultraviolet over the entire surface of a substrate to be processed before or after formation of a fine pattern. It is characterized by having a mechanism capable of irradiating with an illuminance distribution within the range. The half width of monochromatic light to be used is 30 nm or less because it is effective to expose only the surface layer according to the absorption characteristics of the resist and to suppress heat generation due to wavelength components such as infrared rays. .
The reason why the illuminance distribution is within ± 15% is that the illuminance distribution within this range is particularly preferable because the reliability of the processed amount distribution within the substrate to be processed is enhanced. It is more preferable that this apparatus includes a mechanism capable of carrying and arranging the substrate to be processed at a position where the monochromatic light can be emitted.

The "substrate to be processed" in the present invention means an electronic device such as an integrated circuit having a multilayer structure including a fine pattern formed through a step of forming a thin film, and an electric device such as an MR head. Substrate used, on which at least one thin layer is formed. This "substrate to be processed" may have one or more lower layer thin films already formed on its surface, or may be used as a support material for forming one or more thin films on it. A typical example of such a thin film is a conductive film, an insulating film or a resist film.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the details of the method of the present invention will be described for each of the above items, but the present invention is not limited to the following uses.

1. Formation of Multi-Layer Thin Film with High Adhesion By subjecting the substrate to be processed to the above-mentioned monochromatic light irradiation, the adhesion of the thin film to be formed later on the irradiation surface to the irradiation surface can be enhanced. Here, by the irradiation treatment of monochromatic light, when the material of the substrate surface is an inorganic material, the organic contaminants on the surface can be removed by oxidation, decomposition, etc.
When the material of the substrate surface is an organic substance, the change in the polarity can be effectively performed in a shorter time than conventional methods (UV cleaning with a mercury lamp, ozone cleaning, oxygen plasma treatment, etc.).
The film thus formed on the surface of the substrate has improved adhesion to the substrate.

The material of the surface of the substrate to be processed and the material of the film formed thereon may be the same or different. The material that can be used as the material of the surface of the substrate to be processed or the film formed thereon in the present invention is not particularly limited, and examples thereof include Cu, Al, Ti, Si, W, TiN, SiON, Si ₃ N ₄ , and SiC. N
Inorganic materials such as i, NiFe, Ta, NiFeCo, Au, Al ₂ O ₃ , Al ₄ N ₃ , ceramics and oxide superconductors, novolac resins, vinylphenol resins, acrylic resins, epoxy resins or An interlayer insulating film made of a resist containing an alicyclic resin as a main component, an organic siloxane resin, an organic silane resin, an organic fluorine resin, an imide resin, etc., a conductive treatment agent (polyaniline, polythiophene, TCNQ complex, etc.) , CEL, BARC, TARC, and other organic materials such as resist auxiliaries. In particular, a fluorine-containing resin such as a low dielectric constant interlayer insulating film having poor adhesion with general resin materials,
Also, the water-soluble resin for resist overcoat can be preferably improved in adhesion by the method of the present invention.

Further, at least one of the inflow of air, oxygen, ozone or water vapor into the irradiation atmosphere, the immersion of the irradiation substrate in water, and the heating of the substrate during the irradiation treatment to 50 ° C. to 500 ° C. are used together. Then, the efficiency of oxidation is increased, which is preferable for removing organic contaminants or modifying the substrate surface material.

2. High-precision pattern formation a) Multilayer resist method using dry etching First layer (lower layer) The problem of the conventional multilayer etching method using dry etching that the resist cannot be removed is that before the formation of the second layer resist. When the first-layer resist is cured, the first-layer resist may be entirely irradiated with the monochromatic light described above to cure only the surface layer thereof. That is, only the surface layer of the first layer needs to have resistance to a solvent or a developing solution, and if only the surface layer is cured by the overall irradiation with short-wavelength light to maintain the solubility of the lower part, it is possible to perform the wet treatment after the pattern formation. The resist pattern can be removed from one layer.

The material for the first layer is not particularly limited as long as it has a strong absorption for the monochromatic light, but it has a carbon-carbon unsaturated bond such as a benzene ring such as novolac resin or polyvinylphenol resin. A photoresist can be used. In particular, a chloromethylstyrene-based, azide compound-containing or chemically amplified negative resist or a resist having a naphthoquinone-based photosensitizer can be preferably used. Further, when the irradiated substrate is baked at 110 to 180 ° C. for 1 to 60 minutes during or after the exposure, only the surface layer can be preferably cured.

The second layer material is not particularly limited as long as it has high oxygen plasma resistance, but an organic silicone resin can be preferably used.

B) Multilayer resist method using wet etching In the conventional multilayer resist method using wet etching, it is difficult to select the materials for the upper and lower layers, and the photosensitivity time is long. This can be solved by exposing the entire surface to light and then developing the lower layer. Further, this makes it possible to significantly reduce the irradiation time as compared with the conventional method.

The material used here is not particularly limited as long as the upper layer has absorption for the monochromatic light used and the lower layer has sensitivity to the monochromatic light. As an example, a resist having a carbon-carbon unsaturated bond such as a benzene ring can be preferably used for the upper layer, and a polydimethylglutarimide-based or electron beam-based methacrylate positive resist can be preferably used for the lower layer.

C) Method for improving shape of chemically amplified resist In the positive type chemically amplified resist, the formed resist pattern is apt to have a skirting shape at the substrate interface (a biting shape in the case of a negative type), and the T-top on the pattern surface. The problem in the prior art that it is easy to form the shape, and these are not easy to solve is a resist film forming process, a step of subjecting the substrate to be processed before forming the chemically amplified resist film to the entire surface irradiation treatment with the monochromatic light, and The problem can be solved by adding one or both of the above-mentioned entire surface irradiation processing with monochromatic light on the surface of the substrate to be processed after forming the resist film.

When the substrate to be processed is a substrate on which a chemically amplified resist film is to be formed, the kind thereof is not particularly limited, but the adhesion between the chemically amplified resist and the substrate is increased and the positive type chemically amplified resist is used. In order to suppress the tailing near the interface between the resist pattern and the substrate,
It is particularly advantageous to apply it to a substrate coated with a silylating agent. When the silylating agent is, for example, hexamethyldisilazane, the nitrogen component is removed by the monochromatic light irradiation treatment according to the present invention, and the effect of oxidizing the surface suppresses tailing while maintaining the adhesiveness of the resist film to the substrate. be able to. In addition, a film containing nitrogen, such as SiON or TiN, for the purpose of preventing reflection and metal diffusion during resist exposure.
The monochromatic light irradiation treatment of the present invention can also be preferably applied to a substrate having a film made of SiN, SiN or the like formed on the surface thereof, in order to suppress the bottoming of the chemically amplified resist pattern on the substrate. Furthermore, a substrate having a fluorine-based or amine-based interlayer insulating film such as a fluorine-containing resin or a polysilazane-based resin formed on the surface can also improve the adhesion of the chemically amplified resist film formed on the substrate or the bottom of the resist pattern. In order to suppress the pulling, the monochromatic light irradiation treatment according to the present invention can be preferably applied.

The process step of irradiating the substrate to be processed on which the chemically amplified resist film is already formed with monochromatic light is particularly effective when the chemically amplified resist is a positive type, and the T-top shape of the resist pattern is effectively formed. It can be resolved.
When this processing step is adopted, the entire surface irradiation of monochromatic light is performed immediately before the selective exposure (imaging exposure) of the resist, immediately before the post exposure bake (PEB), during the post exposure bake, or immediately before the development. Preferably done, especially PEB
Immediately before or during PEB is preferred. When a light source having a strong absorption of the resist is used as a light source for the entire surface irradiation, the irradiation light does not reach the inner layer of the resist, and therefore it is suitable for causing only the surface layer of the resist to react and suppressing the film loss. As described above, it is preferable to selectively use the monochromatic light source according to the resist type. Particularly, it is preferable to perform the irradiation treatment of the resist film surface using the same monochromatic light source as that used for the irradiation treatment of the substrate surface before the formation of the chemically amplified resist film, because both the process and the apparatus can be simplified.

The type of the chemically amplified resist used here is not particularly limited, but a material having a carbon-carbon unsaturated bond that strongly absorbs the irradiation light on the entire surface is preferable because the amount of film reduction is small. Further, the total irradiation amount of monochromatic light is preferably 0.01 to 100 mJ / cm ² , and when it is less than this range, T-top is apt to occur, and when it is more than this range, the film reduction amount becomes large. It is preferable to adjust the water content of the atmosphere at the time of irradiation (smaller is preferable) or to inject air or nitrogen that has passed through a chemical filter into the irradiation atmosphere because the stability of the formed resist pattern shape increases.

D) Residual removal and ashing method after resist development According to the present invention, the substrate having a resist pattern is subjected to the entire surface irradiation treatment with the above-mentioned monochromatic light, which is much shorter than the conventional method using oxygen plasma. Residual removal and ashing after development can be performed in process time and while avoiding the problem of charge-up due to plasma. As in the case of improving adhesion, inflow of air, oxygen, ozone or water vapor into the irradiation atmosphere, immersion of the irradiation substrate in water,
Also, it is preferable to use at least one of heating the substrate to 50 to 500 ° C. during the irradiation treatment, because the efficiency of residue removal and resist ashing is increased. Further, in this case, as the wavelength of monochromatic light, a wavelength of 175 nm or less at which ozone generation efficiency is high can be preferably used.

E) Method for removing microbubbles during resist development According to this method, the substrate having a resist film is irradiated with the above-mentioned monochromatic light on the entire surface before the development of the resist. With the effect of ozone, the hydrophilicity of the surface layer increases without having to increase the polarity (hydrophilicity).
It is possible to suppress the development failure. As the monochromatic light used for the entire surface irradiation, a wavelength of 175 nm or less, which has a high ozone generation efficiency, can be preferably used. Further, when monochromatic light having strong absorption of the resist is used, the irradiation light does not reach the inner layer of the resist, so that it is preferable to react only the surface layer of the resist film and suppress film loss. As described above, it is preferable that the wavelength of monochromatic light is properly used according to the resist type.

In the case of positive type chemically amplified resist,
In addition to the prevention of the micro-bubbles, the overall irradiation treatment simultaneously prevents the T-top formation, which is preferable. Further, exposure with the same light source as the monochromatic light entire surface irradiation treatment (improvement of adhesion, bottoming prevention in the case of positive type chemical amplification) of the substrate to be processed before formation of the resist film can simplify the process and apparatus, which is preferable. . The type of resist used here may be a positive type or a negative type as long as an aqueous developing solution can be used, and the constituent materials to be used are not particularly limited, but the positive type has a strong absorption of monochromatic light irradiated over the entire surface. Those having a carbon-carbon unsaturated bond can be preferably used. Further, the irradiation amount of monochromatic light is preferably 0.01 to 100 mJ / cm ² , and if it is less than this, the effect of changing the polarity of the surface layer is small, and if it is more than this, the film reduction amount becomes large in the case of a positive resist, and it is desirable in the case of a negative resist. No surface hardening occurs.

F) Prevention of Burr in Lift-off Process and Stabilization of Dimensional Accuracy In order to form the MR element part with stable dimensional accuracy without generating burrs in the lift-off process during manufacturing of the MR type head,
It is advantageous to irradiate the entire surface of the substrate to be processed on which the first resist thin film is formed with the aforementioned monochromatic light to change the solubility of only the surface layer, and then form the upper layer resist on this.

By using this method, the process shown in FIG.
The MR element portion of the MR type head described with reference to can be manufactured as follows. As shown in FIG. 2A, the alumina layer 22 is provided on the support material 21,
A lower shield layer 23 made of NiFe and a lower gap layer 24 made of alumina are sequentially formed thereon, and a first-layer resist film 26 is further formed on the surface of the substrate having the MR pattern 25 on the lower gap layer 24. Next, using the substrate coated with the first-layer resist film 26 as a substrate to be processed, as shown in FIG.
Is modified so as to prevent mixing (mixing) with another resist film to be formed thereon later. Thus the surface layer 28
After the second layer resist film 29 is formed on the modified first layer resist film 26 as shown in FIG. 2C, light 30 having a predetermined pattern is irradiated to perform selective exposure. Reference numerals 31 and 32 shown in FIG. 2C respectively indicate the first portions due to the selective exposure.
It is a photosensitive portion of the layer and the second layer resist film. Here, as shown in this figure, the sensitivity of the first-layer resist film 26 is
The sensitivity is higher than that of the layer resist film 29 so that the width of the exposed portion 31 of the first layer resist film is wider than the width of the exposed portion 32 of the second layer resist film. After this selective exposure, a post-exposure bake can be performed if necessary.

Subsequently, both resist films 26 and 29 are developed to form a resist having a shape in which the first layer resist pattern 26 'bites under the second layer resist pattern 29' as shown in FIG. 3 (a). Form a pattern. Note that FIG.
As in (b), the lower part of the resist pattern on the MR element can be hollow (described later). Next, as shown in FIG. 3C, a third film 33 of a terminal forming material is formed on the surface of the substrate on which the two-layer resist pattern has been formed in this way, and the two-layer resist pattern 26 'is developed with a developing solution. A lift-off process is carried out in which 29 ′ is dissolved and peeled off, and a third film pattern 33 ′ is formed on a portion where the two-layer resist patterns 26 ′ and 29 ′ were not present as shown in FIG. 3D. FIG.
In (d), the MR pattern 25 is the MR element 1 of FIG.
1 and the pattern 33 'formed from the third film corresponds to the terminal 12 in FIG.

In the method described here, the first-layer resist film 26 is formed on the surface layer 2 by irradiating the substrate to be processed with monochromatic light over the entire surface.
8 efficiently sensitizes and exhibits an effect of preventing mixing during coating of the second-layer resist film 29. The first and second layer resist films are both positive type, and when the first layer resist has high sensitivity, it is preferable that the lower layer resist pattern 26 'efficiently digs under the upper layer resist pattern 29'. Can be formed. Further, when the resist solution for the second layer is dropped while rotating the substrate coated with the first layer resist film 26, it is possible to prevent the mixing well.

Apart from this method, in order to form the MR element portion with stable dimensional accuracy without generating burrs in the lift-off process during manufacturing of the MR type head, a thin film of the first resist material and the above The substrate to be processed having the resist pattern of the second resist material having strong absorption for the monochromatic light described above is irradiated with monochromatic light over the entire surface, and the first resist pattern of the second resist material is used as a mask. Advantageously, selective exposure of a thin film of resist material is performed.

By using this method, the process shown in FIG.
The MR element portion of the MR type head described with reference to can be manufactured as follows. As shown in FIG. 4A, the alumina layer 42 is provided on the support material 41,
A lower shield layer 43 made of NiFe and a lower gap layer 44 made of alumina are sequentially formed thereon, and a first resist film 46 and a second layer are formed on the surface of the substrate having the MR pattern 45 on the lower gap layer 44. A resist film 47 is formed. Next, the second-layer resist film is selectively exposed and developed, and the second layer resist film shown in FIG.
As shown in (b), a resist pattern 47 'of a second resist material is formed. This resist pattern 47 '
The substrate on which is formed is used as a substrate to be processed, and the entire surface thereof is irradiated with monochromatic light 48 (FIG. 4C). The resist pattern 47 'having a strong absorption for the monochromatic light 48 functions as a mask, and the resist film 46 in the lower layer is exposed to light to form a photosensitive portion indicated by 49 in FIG. 4C.

Subsequently, the first layer resist film 46 is developed, and as shown in FIG. 5A, the first layer resist pattern 4 is formed.
6'forms a resist pattern having a shape that bites under the second layer resist pattern 47 '. Depending on the width of the second layer resist pattern 47 ′ and the irradiation amount of the monochromatic light, the pattern shown in
As shown in (b), the lower part of the resist pattern on the MR element can be hollow. Next, as shown in FIG. 5B, a third film 50 of a terminal forming material is formed on the surface of the substrate on which the two-layer resist pattern has been formed in this way, and the two-layer resist pattern 46 ′ is formed with a developing solution. A lift-off process is carried out in which 47 'is dissolved and peeled off, and as shown in FIG. 5C, a third film pattern 50' is formed in a portion where the two-layer resist patterns 46 'and 47' were not formed. FIG.
In (c), the MR pattern 45 is the MR element 1 of FIG.
1 and the pattern 50 'formed from the third film corresponds to the terminal 12 in FIG.

In this case, by using short-wavelength monochromatic light for the whole surface irradiation, the photosensitivity of the lower layer (first layer resist film) can be increased and the process time can be shortened. The resist material used here is not particularly limited as long as it has absorption for the monochromatic light used by the resist material for the upper layer and the resist material for the lower layer is sensitive to this monochromatic light, but for the upper layer, a benzene ring or the like is used. A resist material having a carbon-carbon unsaturated bond, a polydimethylglutarimide for the lower layer, or a methacrylate positive resist material for an electron beam can be preferably used.

On the other hand, in the process of forming terminals on the MR element of the MR head by lift-off, when forming the reverse resist pattern of the terminal pattern, only in the narrowest pattern region near the upper portion of the MR element, which becomes the lead core width, The lower part of the resist pattern can have a hollow structure. In this way, even if the pattern is miniaturized, the core width depends only on the dimensions of the upper layer and the film forming conditions of the terminals, and compared to the case where the pattern is not hollow (for example, the pattern lower part is a submicron order pattern). It is effective in stabilizing dimensions and eliminating burrs, and simplifies management specifications in the manufacturing process.

This hollow lift-off process will be described with reference to FIG. FIG. 6A is a top view showing the terminal 62 connected to the MR element 61 formed by using the first layer resist film 63 and the second layer resist film 64.
The first-layer resist film 63 is formed so as to dig into the lower portion of the second-layer resist film 64, and the outline of the outer periphery thereof is shown by a broken line. FIG. 6B is an enlarged view of the MR element portion (the portion indicated by the circle A in FIG. 6A), and here also, the first layer resist film 6 below the second layer resist film 64.
3 has its outer contour outlined by a dashed line, and MR
Only the second-layer resist film 64 exists above the element 61, and a hollow structure is formed in this portion.

Further referring to the cross-sectional view of FIG.
6A is a sectional view taken along line 7-7 of FIG. 6B, and shows that a hollow portion is formed between the MR element 61 and the second-layer resist film 64. FIG. 7B is 7'of FIG. 6B.
FIG. 7B is a sectional view taken along line -7 ′, in which a second layer resist film 64 is formed on a first layer resist film 63 formed on a substrate 60. In FIGS. 7A and 7B, the film of the terminal forming material is on the second layer resist film 64, and this film is later removed together with the resist film by lift-off.

The method for forming such a hollow structure is not particularly limited, but a method including the above-mentioned monochromatic light whole surface irradiation step can be preferably used.

The apparatus used to carry out the method of the present invention uses ± 15 monochromatic light having a half-value width of 30 nm or less at a wavelength in the far-ultraviolet to vacuum-ultraviolet region over the entire surface of a substrate to be processed before or after formation of a fine pattern. It is characterized by having a mechanism capable of irradiating with an illuminance distribution within%, and it is more preferable that this apparatus is provided with a mechanism capable of transporting and arranging the substrate to be processed at a position where the above-mentioned monochromatic light can be irradiated.

For example, in a film forming apparatus such as a spin coater, a spray coater, a vapor deposition apparatus, a sputtering apparatus, a chemical vapor deposition (CVD) apparatus used for manufacturing a semiconductor device or the like, the film forming position (coater cup or chamber) is set. Before or after the substrate is transported, or both, the substrate is transported and installed on an appropriate means such as a plate, and the whole surface of the substrate on the plate has a mechanism capable of collectively irradiating the above-mentioned monochromatic light. You can Further, in the case of a resist developing device, before the substrate is transported to the developing position, it is possible to transport this substrate onto a plate so that the entire surface of the substrate on this plate can be collectively irradiated with the above-mentioned monochromatic light. it can.

It is preferable to add a function capable of adjusting the temperature within the range of room temperature to 500 ° C. to the plate at the position where the monochromatic light is entirely irradiated, since the surface treatment efficiency of the substrate to be treated can be improved. Further, when the in-plane illuminance distribution of the monochromatic light irradiated over the entire surface is within ± 20%, more preferably within ± 15%, the reliability of the processing amount distribution in the substrate to be processed is increased,
preferable. The monochromatic light emitted over the entire surface includes Ar ₂ excimer light (wavelength 126 nm), Kr ₂ excimer light (146 nm), F ₂ excimer light (153 nm), ArBr excimer light (165 nm), Xe ₂ excimer light (wavelength 126 nm). 172 nm), ArCl excimer light (175 nm), ArF excimer light
(193 nm), KrBr excimer light (207 nm), KrCl excimer light (2
22 nm), and KrF excimer light (248 nm) are preferable, and Xe ₂ excimer light is particularly preferable in view of materials used in device manufacturing applications. Furthermore, the atmosphere in which the substrate to be processed for monochromatic light irradiation is arranged is one of air, oxygen, ozone, water vapor, nitrogen, and any other gas, or any combination thereof, depending on the application. It is preferable to have a mechanism capable of substituting with a substance in order to increase the surface oxidation efficiency.

In the apparatus of the present invention, after arranging the substrate to be processed at the irradiation position of monochromatic light, the light source of monochromatic light is located at a distance of 0.1 to 20 mm from the surface of the substrate to be processed, more preferably 1 to 5 mm.
It is preferable to have a mechanism capable of approaching the above distance because it is possible to efficiently irradiate the irradiation light onto the entire surface of the substrate and to move the substrate so as not to hinder it when carrying it by rail or mechanically. . If the distance between the substrate and the light source at the time of irradiation is larger than 20 mm, the illuminance is generally insufficient, and if it is smaller than 0.1 mm, the gas supply between the substrate and the light source is insufficient.

In these devices, the light source is a rod-shaped excimer lamp, and the lamp and the substrate are 0.1 to 2
It is preferable to have a mechanism in which the lamp and the substrate or both or one of the substrates face each other in parallel at a distance of 0 mm and can move and / or rotate relatively at an arbitrary speed, in order to increase the uniformity of the irradiation light within the substrate. The preferred specific device configuration is as follows.

A) A type of fixing the lamp and moving the substrate side b) A type of fixing the lamp and rotating the substrate side c) A type of fixing the lamp and moving while rotating the substrate side d) A lamp fixed on the substrate side Type) that moves the lamp on the board side.F) Type that moves the lamp while rotating the lamp with the board side fixed.) Type that moves the lamp while rotating the board. Lamp rotation type) Type in which both the substrate and the lamp rotate in opposite directions and either moves.

Here, it is preferable that the rotation and the movement are performed at an arbitrary constant speed within a range in which the rotation and the movement can be accurately performed. When the lamp is fixed, the traveling direction is preferably a direction perpendicular to the lamp longitudinal direction.

Further, by arranging a reflector or an absorber around the rod-shaped lamp, it is possible to extract only the light of the parallel component and irradiate the light perpendicularly to the surface of the substrate. In this way, the light of only the parallel component is used for patterning the resist through the photomask and the above-mentioned exposure PCM (expo
The sure-PCM) method can be preferably used.

As described above, various modes are possible in the present invention, and typical ones are listed as follows.

1. A method for forming a thin film, a method for forming a pattern, a method for manufacturing a multi-layered device or a photomask, or a method for manufacturing a multi-layered device or a photomask, which comprises a step of irradiating an entire surface with monochromatic light having a half width of 30 nm or less in a wavelength range from far ultraviolet to vacuum ultraviolet Full width at half maximum of 30 nm in the wavelength range from far ultraviolet to vacuum ultraviolet
A processing apparatus having a mechanism for irradiating the following monochromatic light on the entire surface. 2. Full width at half maximum at wavelengths in the far ultraviolet to vacuum ultraviolet region on the substrate 3
The method for forming a thin film or pattern according to Aspect 1, which comprises a step of forming a conductive film, an insulating film, or a thin film of a resist on the irradiation substrate after performing a monochromatic light irradiation of 0 nm or less on the entire surface.

3. Aspect 1 or 2 including at least one of a step of flowing one or both of oxygen gas and ozone into a substrate atmosphere when the substrate is entirely irradiated, and a step of baking the irradiated substrate at 50 to 500 ° C. 2. The method for forming a thin film or pattern according to 2. 4. The method for forming a thin film or pattern according to Aspect 1 or 2, wherein a substrate on which a conductive film, an insulating film or a resist thin film is formed is used.

5. The method for forming a thin film or pattern according to any one of the above aspects 1 to 4, which uses a substrate coated with a silylating agent. 6. The method for forming a thin film or pattern according to the above aspect 5, wherein the silylating agent is hexamethyldisilazane.

7. The method for forming a thin film or pattern according to any one of the above aspects 1 to 4, wherein a substrate on which a film containing nitrogen is formed is used. 8. 8. The method for forming a thin film or pattern according to the above aspect 7, wherein the film containing nitrogen is a SiON, TiN, or SiN film.

9. The method for forming a thin film or pattern according to any one of the above aspects 1 to 4, wherein a substrate on which an interlayer insulating material is formed is used. 10. 10. The method for forming a thin film or pattern according to the above aspect 9, wherein the interlayer insulating material is a material having a polysilazane structure as a starting material. 11. 10. The method for forming a thin film or pattern according to Aspect 9, wherein the interlayer insulating material is a material containing fluorine atoms.

12. The method for forming a thin film or pattern according to any one of the above aspects 1 to 4, which uses a substrate on which chromium oxide is formed. 13. 5. The pattern forming method according to any one of the above aspects 1 to 4, wherein the film formed on the substrate to be irradiated is a chemically amplified resist.

14. The first layer polymer is formed on the substrate, monochromatic light having a half width of 30 nm or less at a wavelength in the far-ultraviolet to vacuum-ultraviolet region is entirely irradiated, and then the second-layer polymer is formed, thus forming a two-layer film. The method for forming a pattern according to Aspect 4, further comprising a step of developing after selective exposure, wherein at least one of the first layer polymer and the second layer polymer used here has photosensitivity. 15. 15. The pattern forming method according to the above aspect 14, wherein the first layer polymer is a resist and the second layer polymer is a water-soluble film.

16. After spin coating the first layer organic polymer on the substrate and irradiating the whole surface with light having a wavelength of 248 nm or less, the second layer polymer having oxygen plasma resistance higher than that of the lower layer organic polymer by 10 times or more. Is formed, the second layer is exposed and developed to be patterned, this pattern is transferred to the first layer by oxygen plasma, the substrate is processed by using the two-layer pattern thus formed as a mask, and then the first layer is wet-processed. Including a step of removing with the second layer,
The pattern forming method according to any one of the first to fourth aspects. in this way,
The oxygen plasma treatment can be advantageously performed by using a polymer material having an oxygen plasma resistance that is 10 times or more higher than that of the lower layer (first layer) organic polymer as the upper layer (second layer) organic polymer.

17. After spin coating the first layer organic polymer on the substrate and irradiating the whole surface with light having a wavelength of 248 nm or less, the second layer polymer having oxygen plasma resistance higher than that of the lower layer organic polymer by 10 times or more. Is formed, a third layer photosensitive resin is further formed thereon, and the third layer is exposed,
After development and patterning, this pattern is transferred to the second layer, this pattern is further transferred to the first layer by oxygen plasma, the substrate is processed using the three-layer pattern thus formed as a mask, and then the first process is performed by wet processing. 5. The pattern forming method according to any one of the above aspects 1 to 4, including a step of removing the layer together with one or both of the second layer and the third layer.

18. During the whole surface irradiation treatment of the first layer organic polymer or after the whole surface irradiation, the irradiated substrate is
18. The pattern forming method according to Aspect 16 or 17, including a step of baking at 10 to 180 ° C. for 1 to 60 minutes. 19. The pattern forming method as described in Aspect 2 or 16 to 18, wherein the first layer material is a photoresist including a novolac resin and a naphthoquinonediazide-based photosensitizer. 20. 19. The pattern forming method according to Aspect 2 or 16 to 18, wherein the second layer material is an organic silicone resin.

21. The method according to Aspect 1, further comprising the step of subjecting the substrate on which the resist film is formed to an entire surface irradiation treatment with monochromatic light having a half width of 30 nm or less at a wavelength in a range from far ultraviolet to vacuum ultraviolet, and developing the resist film with an aqueous solution developer. Pattern formation method. 22. 22. The pattern forming method according to the above aspect 21, wherein the resist film is a positive resist containing a naphthoquinonediazide-based photosensitizer. 23. 22. The pattern forming method as described in Aspect 21, wherein the resist film is a positive chemically amplified resist. 24. A positive chemically amplified resist film having strong absorption in a wavelength range from far ultraviolet to vacuum ultraviolet is formed on a substrate, and the resist film is pre-baked and then selectively exposed to light, and while the resist film is baked at 50 to 200 ° C., the far ultraviolet is formed. From 0.01 to 100 mJ / c of monochromatic light with a half width of 30 nm or less at a wavelength in the vacuum ultraviolet region
24. The pattern forming method as described in Aspect 23, wherein the entire surface is irradiated with an exposure amount of m ² and then developed.

25. The film formed by the method of Embodiment 1 is a positive type chemically amplified resist film having strong absorption in a wavelength range from far ultraviolet to vacuum ultraviolet, and the resist film is pre-baked, selectively exposed and baked, and then deep ultraviolet to vacuum ultraviolet. Aspect 23, in which monochromatic light having a half-value width of 30 nm or less at a wavelength of the region is subjected to overall irradiation treatment with an exposure amount of 0.01 to 100 mJ / cm ² and then developed
The pattern forming method described in the above. 26. The film formed by the method of Embodiment 1 is a positive-type chemically amplified resist film having strong absorption in the wavelength range from far ultraviolet to vacuum ultraviolet, and after prebaking the resist film, it has a wavelength range from far ultraviolet to vacuum ultraviolet. Monochromatic light with a value width of 30 nm or less
24. The pattern forming method according to the above aspect 23, wherein the entire surface is irradiated with an exposure amount of 0.01 to 100 mJ / cm ² , and then selective exposure, baking and development are performed. 27. The film formed by the method of Embodiment 1 is a positive type chemically amplified resist film having strong absorption in a wavelength range from far ultraviolet to vacuum ultraviolet region, and the resist film is pre-baked and selectively exposed, and then far ultraviolet to vacuum ultraviolet region. Width at half wavelength of 30 nm
24. The pattern forming method according to Aspect 23, wherein the following monochromatic light is entirely irradiated with an exposure amount of 0.01 to 100 mJ / cm ² and then developed.

28. Full width at half maximum at wavelengths from far-ultraviolet to vacuum-ultraviolet region on a substrate on which a resist or organic film pattern is formed
The pattern forming method according to the above-mentioned aspect 1, comprising a step of irradiating a monochromatic light of 0 nm or less on the entire surface to remove the residue of the pattern. 29. After forming a resist pattern on the film to be processed and transferring the resist pattern to form the pattern on the film to be processed, the half-value width is 30 nm at a wavelength in the range from far ultraviolet to vacuum ultraviolet.
The pattern forming method according to Aspect 1, further comprising the step of irradiating the whole surface with monochromatic light to remove the resist. 30. 30. The pattern forming method according to Aspect 29, which includes at least one of a step of baking the substrate at 50 to 500 ° C. and a step of flowing oxygen or ozone into an irradiation atmosphere during the entire surface irradiation.

31. The upper layer resist on the substrate is made of a material having a strong absorption in the wavelength range from far ultraviolet to vacuum ultraviolet.
After forming a resist film with a layered structure and patterning the upper layer resist, the half-value width is 30 nm at wavelengths in the far-ultraviolet to vacuum-ultraviolet region.
The pattern forming method according to Aspect 1, wherein the following monochromatic light is entirely irradiated, and then the lower layer is developed.

32. After coating the first resist thin film on the substrate, the half-value width of 30 nm in the wavelength range from far ultraviolet to vacuum ultraviolet.
After irradiating the following monochromatic light on the entire surface to change the solubility of only the surface layer, form a second resist film on this, perform selective exposure, and perform post-exposure bake if necessary, and then develop. Includes a lift-off step of forming a two-layer resist pattern having a shape in which the first resist bites under the second resist pattern, further forming a third thin film, and then dissolving and peeling the resist film to remove it. The pattern forming method as described in Aspect 1. This method is particularly useful in the manufacture of MR heads. 33. 33. The pattern forming method as described in Aspect 32, wherein the first resist film and the second resist film are positive type resists, and the first resist film has higher sensitivity than the second resist film.

34. The upper layer resist on the substrate is made of a material having a strong absorption in the wavelength range from far ultraviolet to vacuum ultraviolet.
After forming a resist film with a layered structure and patterning the upper layer resist, the half-value width is 30 nm at wavelengths in the far-ultraviolet to vacuum-ultraviolet region.
The entire surface is irradiated with the following monochromatic light and then developed to form a two-layer resist pattern in which the lower layer resist bites under the upper layer resist pattern, and then a third film is formed to form a resist film. The pattern forming method as described in the above aspect 1, which includes a lift-off step of melting and peeling and removing.
This method is particularly useful in the manufacture of MR heads. 35. 35. The pattern forming method as described in the above aspect 31, 32 or 34, wherein the first resist or the lower layer resist is polydimethylglutarimide.

36. The light source that irradiates the entire surface is Ar ₂ , Kr ₂ ,
The thin film or pattern forming method according to any one of the above aspects 1 to 35, which is an excimer light using any one of F ₂ , ArBr, Xe ₂ , ArCl, ArF, KrBr, KrCl, and KrF. 37. 37. The thin film or pattern forming method according to any one of the above aspects 1 to 36, wherein the light source for overall surface irradiation is excimer light having a wavelength of 172 nm using Xe ₂ .

38. The substrate can be transported and arranged on a plate at a position where irradiation is possible, and the entire surface of the substrate on the plate is irradiated with monochromatic light with a half width of 30 nm or less at a wavelength in the range from far ultraviolet to vacuum ultraviolet with an illuminance distribution within ± 15%. Have a mechanism that can
The processing apparatus according to the above aspect 1.

39. Before and / or after the substrate is transferred to the spin coating position, it can be transferred and arranged on a plate at a position where the substrate can be irradiated, and the entire surface of the substrate on this plate is irradiated with wavelengths in the range from far ultraviolet to vacuum ultraviolet. 2. The processing apparatus according to the above aspect 1, having a mechanism capable of irradiating a monochromatic light having a half width of 30 nm or less with an illuminance distribution within ± 15%. That is, this device corresponds to a spin coating device.

40. Before and / or after the substrate is transferred to the vacuum film formation position, it can be transferred and arranged on a plate at a position where the substrate can be irradiated, and the entire surface of the substrate on this plate is changed from far ultraviolet to vacuum ultraviolet region. Half-width at the wavelength of 30
The processing apparatus according to the above aspect 1, having a mechanism capable of irradiating monochromatic light of nm or less with an illuminance distribution within ± 15%. That is, this device corresponds to a vacuum film forming device.

41. Before the substrate is transferred to the resist developing position, it can be transferred and placed on a plate at a position where the substrate can be irradiated, and the full width at half maximum of 30 nm or less at a wavelength in the far-ultraviolet to vacuum-ultraviolet region over the entire surface of the substrate on the plate. Has a mechanism that can irradiate the monochromatic light of within ± 15% of the illuminance distribution,
The processing apparatus according to the above aspect 1. That is, this device corresponds to a developing device.

42. The apparatus according to any one of the above aspects 38 to 41, wherein the plate at the whole surface irradiation position has a function of adjusting the temperature within the range of 50 ° C to 500 ° C. 43. The substrate atmosphere on the plate that irradiates the entire surface is oxygen,
The apparatus according to any one of the above aspects 38 to 42, which has a mechanism capable of being replaced with at least one of ozone and nitrogen. 44. After the substrate is conveyed on the plate and the substrate is placed on the plate, at least one of the monochromatic light source and the substrate is located at a position where it does not interfere with the substrate conveyance system, and the light source and the surface of the substrate. The apparatus according to any one of the above aspects 38 to 43, further comprising a mechanism for approaching a position where the distance is 0.1 to 20 mm and returning to a position where the substrate transport system is not hindered again after irradiation with monochromatic light. 45. The monochromatic light source is a rod-shaped excimer lamp, and this lamp and the substrate face each other in parallel at a distance of 0.1 to 20 mm.
The apparatus according to any one of the above aspects 38 to 44, wherein both or one of them has a mechanism capable of moving and / or rotating at a right angle and at right angles to the longitudinal direction of the lamp.

46. The light that illuminates the entire surface is Ar ₂ , Kr ₂ ,
The apparatus according to any one of the above aspects 38 to 45, which is excimer light using any one of F ₂ , ArBr, Xe ₂ , ArCl, ArF, KrBr, KrCl, and KrF. 47. The apparatus according to any one of the above-mentioned aspects 38 to 45, wherein the light for overall irradiation is Xe ₂ excimer light. 48. Taking out only the parallel component light from the monochromatic light source,
48. The method or apparatus according to any one of the above aspects 1 to 47, which has a step or mechanism for irradiating the substrate to be processed vertically.

49. A method for manufacturing a multi-layered structure device, which uses the method and apparatus according to any one of the above aspects 1 to 48. 50. A method for manufacturing a photomask, which uses the method and apparatus according to any one of the above aspects 1 to 48. 51. A method of manufacturing a semiconductor device, which uses the method and apparatus according to any one of the above aspects 1 to 48. 52. A method of manufacturing a magnetic head using the method and apparatus according to any one of the above aspects 1 to 48.

53. In order to manufacture an MR head including a magnetoresistive effect (MR) element for reproducing a signal magnetic field from a medium and having shields on both sides of the element, inversion resist of the terminal pattern is formed in a step of forming a terminal pattern on the MR element by lift-off. When forming the pattern,
A method for manufacturing an MR head, wherein a resist pattern is formed by narrowing only a region near an upper part of an MR element, which is a lead core width of an inverted resist pattern, and a lower part of the resist pattern in this region has a hollow structure.

54. In order to manufacture an MR head including a magnetoresistive (MR) element for reproducing a signal magnetic field from a medium and having shields on both sides of the element, in a step of forming a terminal pattern on the MR element by lift-off, the above-mentioned aspects 32 to 35 Using at least one of the methods, when forming the reverse resist pattern of the terminal pattern, a resist pattern is formed by narrowing only the upper vicinity region of the MR element, which is the lead core width of the reverse resist pattern,
Further, a method of manufacturing an MR head, in which only the resist pattern in this region has a hollow structure in the lower part.

[0088]

EXAMPLES Next, the present invention will be further described with reference to examples. It goes without saying that the invention is in no way limited by these examples.

Example 1 In this example, a surface treatment / residue removal / ashing apparatus having an excimer irradiation function will be described. Based on a commercially available ozone cleaning device (UV-1 made by Samco International Laboratories), UER200-1 made by Ushio Inc. is placed on a hot plate on which a substrate to be processed is placed.
72-inch Xe ₂ excimer lamp was added. An outline of the apparatus modified in this way is as shown in FIG. 8, in which 81 is a surface treatment chamber, 82 is a hot plate, and 83 is an added excimer lamp. The lamp 83 transports a wafer (not shown) as a substrate to be processed from the inlet side wafer cassette 84 onto the hot plate 82 and after the exposure.
When transferring from the hot plate 8 to the exit side wafer cassette 85, it moves upward so as not to interfere with contact with the transfer arm, and moves downward during exposure to move the hot plate 8
It was designed so that it can be exposed at an arbitrary distance from the wafer (not shown) on No. 2 above. Instead of moving the excimer lamp 83, the hot plate 82 on which the wafer is placed can be moved in the vertical direction. Ordinary means such as rails and belts can be used to transfer the wafer.

A mechanism for controlling the wafer transfer path and the exposure amount is used at the time of setting a normal recipe. Also, an illuminance meter was installed so that the illuminance of the lamp could be checked regularly. Further, any gas (here, oxygen, nitrogen, ozone) can be introduced into the atmosphere of the wafer on the hot plate 82 independently or as a mixture. Reference numerals 86a, 86b, and 86c shown in FIG. 8 are flowmeters for oxygen, oxygen, and nitrogen for ozone generation, respectively, and 87 is an ozone generator. In this device, the hot plate 8
2 may be omitted, and ozone, oxygen and nitrogen may not be supplied.

Example 2 In this example, a spin coater device with an excimer exposure function will be described. Commercially available mechanical transfer type spin coater (Lisotec Japan L
Based on ARC-ULTIMA 1000), a UE manufactured by Ushio Inc. is placed on a hot plate on which a substrate to be processed is placed.
R200-172 type Xe ₂ excimer lamp was added.
An outline of the device modified in this way is shown in FIG. 9, in which 91 is a surface treatment chamber, 92 is a hot plate, and 93 is an added excimer lamp. The lamp 93 transports a wafer (not shown) as a substrate to be processed from the inlet side wafer cassette 94 onto the hot plate 92, and discharges a processed wafer (not shown) from the hot plate 92 after exposure. At times, it was designed to move upward so as to avoid contact with the transfer arm so as not to interfere, and to move downward during exposure to allow exposure at an arbitrary distance from a wafer (not shown) on the hot plate 92. Instead of moving the excimer lamp 93, a hot plate 92 on which a wafer is placed
Can also be moved up and down. Ordinary means such as rails and belts can be used to transfer the wafer.

The mechanism for controlling the wafer transfer path and the exposure amount was set during normal recipe setting. Also, an illuminance meter was installed so that the illuminance of the lamp could be checked regularly. Further, oxygen, nitrogen, and ozone can be introduced into the atmosphere of the wafer on the hot plate 92 independently or as a mixture. 96a, 96b, 96 shown in FIG.
c is a flow meter of oxygen for generating ozone, oxygen and nitrogen, and 97 is an ozone generator.

The surface-treated wafer (not shown) is
It is possible to convey the treatment liquid to the coater cup 98, apply the treatment liquid to the coater cup 98, convey the treatment liquid to a normal hot plate 99 for treatment, and send the treatment liquid to the exit side wafer cassette 95. Coater cup 9
It is also possible to return the wafer to the surface processing chamber 91 again for processing after the processing with 8 or the normal hot plate 99.

In this apparatus, the hot plate 92
It may or may not be provided, and ozone, oxygen and nitrogen may not be supplied. Normally, you don't have to have the hot plate 99,
Alternatively, two or more units may be prepared. Further, a cooling plate (not shown) may be provided.

Example 3 In this example, a film forming apparatus with an excimer exposure function will be described. Commercially available mechanical transfer type CVD film forming device (MULTIPL manufactured by Sumitomo Precision Industries, Ltd.
Based on (EX-CVD), a UER200-172 type Xe ₂ excimer lamp manufactured by Ushio Inc. was added on a hot plate on which a substrate to be processed was placed. An outline of the device modified in this way is shown in FIG. 10, in which 101 is a surface treatment chamber, 102 is a hot plate, and 103 is an added excimer lamp. The lamp 103 transports a wafer (not shown) as a substrate to be processed from the inlet side wafer cassette 104 onto the hot plate 102, and discharges a processed wafer (not shown) from the hot plate 102 after exposure. It is designed so that sometimes it moves upward so as not to hinder the contact with the transfer arm, and at the time of exposure, it moves downward to allow exposure at an arbitrary distance from the wafer (not shown) on the hot plate 102. Excimer lamp 103
Instead of moving the hot plate 102, the hot plate 102 on which the wafer is placed can be moved vertically. Ordinary means such as rails and belts can be used to transfer the wafer.

The mechanism for controlling the wafer transfer path and the exposure amount was set at the usual recipe setting. Also, an illuminance meter was installed so that the illuminance of the lamp could be checked regularly. Further, oxygen, nitrogen, and ozone can be introduced into the atmosphere of the wafer on the hot plate 102 independently or as a mixture. 106a and 106 shown in FIG.
Reference numerals b and 106c respectively denote flow meters of oxygen for generating ozone, oxygen and nitrogen, and 107 denotes an ozone generator.

The surface-treated wafer (not shown) is
The film can be transferred to the CVD chamber 108, subjected to film forming processing, and then discharged to the exit side wafer cassette 105,
Alternatively, it is also possible to perform surface treatment again in the surface treatment chamber 101 before sending it to the exit side wafer cassette 105 and then discharge it to the exit side wafer cassette 105.

In this apparatus, the hot plate 10
2 may be omitted, and ozone, oxygen and nitrogen may not be supplied. Further, a cooling plate (not shown)
May be provided.

[Embodiment 4] In this example, a developer having an excimer exposure function will be described. Commercially available mechanical transport type resist developer (Tokyo Electron MARK
-V) as a base, a wafer as a substrate to be processed can be moved onto a hot plate of a surface processing chamber before and after development, and U is manufactured by Ushio Inc. on the hot plate.
ER200-172 type Xe ₂ excimer lamp was added. An outline of the apparatus modified in this way is as shown in FIG. 11, in which 111 is a surface treatment chamber,
Reference numeral 112 denotes a hot plate, and 113 denotes an added excimer lamp. The lamp 113 transports a wafer (not shown) as a substrate to be processed from the inlet side wafer cassette 114 onto the hot plate 112,
When a processed wafer (not shown) is discharged from the hot plate 112 after exposure, it is moved upward so as not to interfere with contact with the transfer arm, and it is moved downward during exposure to move the wafer on the hot plate 112. It was designed to allow exposure at an arbitrary distance from (not shown). Instead of moving the excimer lamp 113, the hot plate 112 on which the wafer is placed can be moved in the vertical direction. Ordinary means such as rails and belts can be used to transfer the wafer.

The mechanism for controlling the wafer transfer path and the exposure amount was set at the time of normal recipe setting. Also, an illuminance meter was installed so that the illuminance of the lamp could be checked regularly. Further, nitrogen, oxygen, and ozone can be introduced into the atmosphere of the wafer on the hot plate 112 independently or as a mixture. Instead of nitrogen, it is also possible to remove amine-based impurities with a chemical filter (not shown) or the like and introduce air having a controlled water content. 116a, 116b, 11 shown in FIG.
Reference numeral 6c is a flowmeter for oxygen for generating ozone, oxygen and nitrogen, and 117 is an ozone generator.

The surface-treated wafer (not shown) is
It can be conveyed to the developing cup 118 for development processing and then discharged to the exit side wafer cassette 115, or it can be subjected to surface treatment again in the surface treatment chamber 111 before being sent to the exit side wafer cassette 115 and then exit side wafer cassette 115. It is also possible to discharge to the cassette 115.

In this apparatus, the hot plate 11
2 may be omitted, and ozone, oxygen and nitrogen may not be supplied. Further, an ordinary hot plate (not shown) or cooling plate (not shown) may be provided.

[Embodiment 5] In this example, an irradiation distribution improved excimer parallel light irradiation apparatus will be described. On the hot plate in the same surface treatment chamber as described in the previous example, an Xe ₂ excimer lamp modified so that only parallel light can be taken out was installed so as to be movable in parallel at an arbitrary distance from the hot plate surface. . FIG. 12 shows an apparatus configured in this way.
This will be described with reference to FIG. The side view of FIG. 12A and FIG.
As seen in the top view of (b), the surface treatment chamber 1
21. Above the hot plate 122 having the wafer attachment / detachment pins 131, the excimer lamp 123 is placed in the vertical direction (direction of arrow A in the figure) and in the horizontal direction (arrow B in the figure) parallel to the transfer direction of the wafer 130. It was installed so that it could be moved in both directions. As in the previous example, the excimer lamp 123 moves upward so as not to hinder the transfer of the wafer 130 onto the hot plate 122 and the discharge of the hot plate 122 after exposure so that the wafer transfer is performed. It is designed to avoid contact with the arm 133 and move downward during exposure to allow exposure at an arbitrary distance from the wafer 130 on the hot plate 122.

The exposure amount of the wafer 130 is set by the moving speed of the lamp 123 in the horizontal direction (the direction of arrow B in the figure). Further, an illuminance meter 134 is installed so that the illuminance of the lamp can be regularly checked. Further, air, oxygen, nitrogen, and ozone can be introduced into the atmosphere of the wafer on the hot plate 130 independently or as a mixture (only one gas inlet is shown in the figure for simplification). ). Reference numeral 135 in the figure denotes a shutter that is opened and closed to pass the transfer arm 133 when the wafer 130 is taken in and out of the surface processing chamber 121.

Excimer lamp 123 used in this apparatus
In order to take out parallel light, a light reflector 136 is installed in the surrounding area. It is also possible to use a light absorber instead of the reflector. As shown in FIG. 13, the reflector 136 is provided with a slit-shaped light extraction port 137 in a portion facing the wafer 130, and the light extraction port 137 of the light 138 emitted from the excimer lamp 123 is provided. The wafer 130 is configured to be irradiated with only the parallel light 139 passing through. Of course, it is also possible to irradiate only parallel light onto the wafer from the excimer lamp with other configurations.

Example 6 In this example, the improvement of the adhesion between the resist and the water-soluble film will be described. Using the surface treatment apparatus of Example 1 shown in FIG. 8, a ZEP-520 type electron beam resist manufactured by Nippon Zeon Co., Ltd. was deposited from the inlet side wafer cassette S.
The i-wafer was transferred onto a hot plate, the Xe ₂ excimer lamp was brought close to a distance of 5 mm from the wafer surface, and the whole surface was irradiated for 15 seconds. At this time, the exposure atmosphere was air. After the light irradiation, the wafer was transferred to the exit side cassette. After that, when a water-soluble charge-up inhibitor was applied to the surface of the treated wafer, good coatability was confirmed. Then, using a wafer coated with this charge-up preventive agent (Espacer manufactured by Showa Denko KK) as a substrate, electron beam exposure was carried out by a usual method, and development was carried out. It was confirmed that the line and space pattern was well formed.

On the other hand, when a water-soluble charge-up preventing agent was applied on the resist film without performing the above-mentioned entire surface irradiation treatment with the excimer light, the resist was water-repellent and could not be applied well.

Further, the same resist film surface irradiation treatment is performed by changing the distance between the excimer lamp and the substrate and the irradiation time at the time of the entire surface irradiation of the excimer light, and the substrate surface after applying the same aqueous solution of the charge-up preventing agent. The result of having measured the contact angle with respect to water is shown in FIG. From this figure, it was confirmed that the hydrophilic treatment of the resist surface by the main irradiation treatment was efficiently performed according to the irradiation distance and the irradiation time.

Example 7 In this example, the surface treatment of a SiON substrate will be described. Using the surface treatment apparatus of Example 1 shown in FIG. 8, an Si wafer having a SiON film formed thereon was conveyed from the exit side wafer cassette onto a hot plate, the excimer lamp was brought closer to a distance of 1 mm from the wafer surface, and the exposure time was increased. Then, the whole surface was irradiated by changing the temperature. At this time, the exposure atmosphere was air. After the irradiation, the wafer was transferred to the outlet side cassette. X
When the atomic number ratio on the SiON surface was measured with a PS analyzer, the results are shown in Table 1. From this table, residual amine-based N and impurity-based C decreased, and oxygen increased,
It was found that the surface of SiON could be effectively cleaned by light. It was also confirmed that the irradiation of the excimer light did not cause the heating of the substrate that occurs when the irradiation is performed with a normal low-pressure mercury lamp.

[0110]

[Table 1]

[Embodiment 8] In this example, normal temperature SiO ₂ of the SOG interlayer insulating film will be described. Example 1 shown in FIG.
Using the surface treatment equipment, the Si wafer spin-coated with FOX (polyhydrogen silsesquioxane) interlayer insulating film manufactured by Dow Corning Co., USA is transferred from the inlet side wafer cassette onto the hot plate, and the excimer lamp is transferred to the wafer surface. 1 mm away from the wafer, and the irradiation time was changed to irradiate the entire surface of the wafer. At this time, the irradiation atmosphere was dry air. After the irradiation, the wafer was transferred to the outlet side cassette. When the amount of Si-H in the insulating film was measured by an IR analyzer, the results are shown in Table 2. From this table, it was confirmed that Si-H was reduced at room temperature and the silicone resin insulating film was efficiently converted to SiO ₂ . Normally, this film needs to be heated at 400 ° C. or higher to turn into SiO ₂ , but it was confirmed that the same effect can be obtained at room temperature by adopting the treatment method of the present invention.

[0112]

[Table 2]

[Embodiment 9] Here, formation of a resist pattern on carbon fluoride will be described. Using the apparatus of Example 2 shown in FIG. 9, a Si wafer spin-coated with a polytetrafluoroethylene-based interlayer insulating film (dielectric constant = 1.8) manufactured by US Gore Co. from the inlet side wafer cassette was placed in the surface treatment chamber. The wafer was transferred onto a hot plate, an excimer lamp was brought close to a distance of 1 mm from the wafer surface, and the whole surface was irradiated in air at room temperature (exposure amount 600 mJ / cm ² ). After irradiation,
The wafer is transferred to a coater cup and Z manufactured by Nippon Zeon Co., Ltd.
IR-S185 type novolac resist was spin-coated, then the wafer was transferred to a hot plate and heated to 100 ° C.
After baking for 1 minute, the wafer was transferred to the exit side wafer cassette. This wafer was selectively exposed with an i-line stepper, and then developed with a 2.38% tetramethylammonium hydroxide aqueous solution as usual to form a 0.4 μm line-and-space pattern.

On the other hand, when the same resist was spin-coated on the Si wafer on which the same polytetrafluoroethylene-based interlayer insulating film was formed without performing the above irradiation treatment, the adhesion was poor and a uniform film could not be formed. .

[Embodiment 10] In this example, a two-layer resist method by dry etching will be described. A 2 μm flattening layer (SAL-601 resist made by Sibray Co., Ltd.) is applied on a silicon wafer on which an aluminum film is formed, and after prebaking at 90 ° C., Xer ₂ excimer laser light of UER200-172 made by USHIO INC. 11 after total irradiation for 3 minutes at irradiation distance
Bake at 0 ° C. for 2 minutes. Then, 0.2 μm of an upper layer resist (trimethylsilylated polymethylsilsesquioxane) was applied on this resist film and prebaked. Next, electron beam exposure and development with an organic developer (methyl isobutyl ketone) are performed, and only the upper layer has a line of 1 μm.
Patterned And Space.

Then, using a DEM-451 type dry etching apparatus (manufactured by Nichiden Anelva), a gas pressure of 20 mTorr,
The flattening layer is etched under the conditions of an applied frequency of 13.56 MHz, an oxygen gas flow rate of 20 sccm, and an RF power of 0.16 W / cm ² ,
A two layer pattern was formed. Further, the underlying aluminum was patterned using this two-layer pattern as a mask. Then, when this wafer was immersed in acetone, the two-layer resist pattern could be easily peeled off.

[Embodiment 11] Here, a two-layer resist method by dry etching will be described. On a silicon wafer with an aluminum film formed, a planarization layer (made by Sibley)
(MP-1300 resist) is applied to 2 μm, prebaked at 90 ° C., and then Xe ₂ excimer laser light of UER200-172 manufactured by USHIO INC. Is applied to the entire surface, and then an upper layer resist (trimethylsilylated polymethylsilsesquioxane) is applied. 0.2 μm was applied and prebaked. Next, electron beam exposure and development with an organic developing solution were performed to pattern a line and space of 1 μm only in the upper layer.

Thereafter, using a DEM-451 type dry etching apparatus, gas pressure was 20 mTorr and applied frequency was 13.56 MHz.
The flattening layer was etched under the conditions of an oxygen gas flow rate of 20 sccm and an RF power of 0.16 W / cm ² to form a two-layer pattern. Further, the underlying aluminum was patterned using this two-layer pattern as a mask. Then, when this wafer was immersed in acetone, the two-layer resist pattern could be easily peeled off.

[Embodiment 12] Here, a three-layer resist method by dry etching will be described. On a silicon wafer with an aluminum film formed, a planarization layer (made by Sibley)
(MP-1300 resist) is applied to 2 μm, pre-baked at 90 ° C., and then Xe ₂ excimer laser light of Ushio Denki UER200-172 is applied to the entire surface, and then polyvinyl phenylsilsesquioxane is applied to 0.2 μm. Then, after curing by exposure, an MP-1300 resist was formed on this, UV exposure and alkali development were performed, and a line and space of 1 μm was patterned only in the upper layer.

Then, using a DEM-451 type dry etching apparatus, gas pressure was 20 mTorr and applied frequency was 13.56 MHz.
The upper layer pattern was transferred to the intermediate layer under the conditions of a fluorine gas flow rate of 20 sccm and an RF power of 0.16 W / cm ² , and then the lower layer was further etched by oxygen plasma to form a three-layer resist pattern. Further, using this pattern as a mask, the underlying aluminum was patterned. Then, when this wafer was immersed in MS2001 stripping solution manufactured by Fuji Hunt, Inc., the three-layer resist pattern could be easily stripped.

[Embodiment 13] In this example, a two-layer resist method by wet etching will be described. ZEON CMR resist 0.4 μm is coated on a silicon wafer,
After prebaking at 180 ° C, ZIR- made by Nippon Zeon Co., Ltd. as the upper layer
A 0.5 μm pattern of S185 type photoresist was formed by i-line exposure. Next, on this wafer, UER2 manufactured by USHIO INC.
00-172 Xe ₂ excimer laser light 1 at irradiation distance of 3 mm
When the whole surface was irradiated for a minute and then developed, the upper layer resist pattern could be transferred to the lower layer in a short time.

[Embodiment 14] Here, the formation of a chemically amplified resist pattern on a SiON substrate will be described. FIG.
Using the apparatus of Example 2 as shown in FIG. 2, a SiON film-formed Si wafer is transferred from the inlet side wafer cassette onto a hot plate, where the lamp is brought closer to a distance of 1 mm from the wafer surface and at room temperature and in air. The whole surface was irradiated with Xe ₂ excimer laser light for 1 minute (exposure amount 600 mJ / cm ² ). A K2G chemically amplified positive resist manufactured by Japan Synthetic Rubber Co., Ltd. was spin-coated on this wafer and baked at 80 ° C. for 90 seconds. This wafer was selectively exposed with a KrF excimer laser stepper, baked at 100 ° C. for 90 seconds, and then developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 60 seconds as usual. When the cross section of the formed resist pattern was observed, a 0.25 μm line-and-space pattern could be resolved without hem.

On the other hand, in a resist pattern formed by using a normal spin coater, a hot plate, and a developing device without performing the above-mentioned whole surface irradiation treatment with excimer light,
The bottoming shape was observed at the substrate interface.

[Embodiment 15] Here, formation of a chemically amplified resist pattern on a polysilazane-based insulating film substrate will be described. Using the apparatus of Example 2 as shown in FIG. 9, a Si wafer having a BLN-Q (polysilazane-based material) interlayer insulating film manufactured by Catalyst Kasei Co., Ltd. formed on the inlet side wafer cassette was transferred onto a hot plate. 1mm from the wafer surface with the lamp
Close of a distance, 600 mJ / cm ² exposure 1 minute amount Xe ₂
The entire surface was irradiated with excimer light. At this time, ozone was introduced into the exposure atmosphere at a flow rate of 1 liter / min, and the substrate was heated to 200 ° C. After irradiation, the wafer was transferred to a coater cup, and the same novolak resist as in Example 9 was spin-coated,
After that, the wafer was transferred to a hot plate, baked at 100 ° C. for 1 minute, and transferred to an exit side wafer cassette. Then, after selectively exposing this wafer with KrF excimer laser light, it is immediately baked at 110 ° C. for 1 minute,
It was developed with a 2.38% tetramethylammonium hydroxide aqueous solution as usual. When the cross section of the formed resist pattern was observed, it was possible to resolve a line and space pattern of 0.25 μm without causing bottoming at the substrate interface.

On the other hand, in the resist pattern formed by using the ordinary spin coater, hot plate, and developing device without performing the above-mentioned whole surface irradiation with Xe ₂ excimer light, the bottoming shape at the substrate interface was confirmed. Was done.

Example 16 In this example, the post-exposure post-exposure pattern formation of a chemically amplified resist will be described.
A K2G chemically amplified positive resist manufactured by Japan Synthetic Rubber Co., Ltd. was spin-coated on a silicon wafer, baked at 80 ° C. for 90 seconds, and then selectively exposed by a KrF excimer laser stepper. Then, the substrate was left for 10 hours in an atmosphere having an ammonia concentration of 30 ppb, and the surface treatment apparatus of Example 1 was used to irradiate the entire surface with a Xe ₂ excimer lamp at a distance of 5 mm from the wafer surface for 1 second. Then, it was baked at 100 ° C. for 90 seconds, and then developed as usual with a 2.38% tetramethylammonium hydroxide aqueous solution for 60 seconds. Observation of the cross section of the formed resist pattern revealed that a line-and-space pattern of 0.25 μm could be resolved without the formation of a surface insoluble layer (T-top).

On the other hand, in the resist pattern formed without performing the above-mentioned Xe ₂ excimer light overall irradiation treatment,
It was observed that a T-top was formed on the surface layer of the resist.

Example 17 Here, the formation of a chemically amplified resist pattern on a HMDS (hexamethyldisilazane) treated substrate will be described. Using the apparatus of Example 2, the HMDS-processed Si wafer is transferred from the inlet side wafer cassette onto a hot plate in the surface processing chamber, where the Xe ₂ excimer lamp is brought close to a distance of 3 mm from the wafer surface, and at room temperature, air. The whole surface was irradiated for 1 minute (exposure 6
00 mJ / cm ² ). After the irradiation, the wafer was transferred to a coater cup, a commercially available chemically amplified positive resist (K2G manufactured by Japan Synthetic Rubber Co., Ltd.) was spin-coated, and then the wafer was transferred to a hot plate and baked at 100 ° C. for 1 minute, and then, The wafer was transferred to the exit side wafer cassette. This wafer was selectively exposed with a KrF excimer laser stepper, and then left in an ordinary clean room for 120 minutes.

Next, the wafer is transferred to the apparatus of Example 4 (see FIG. 11), the wafer is transferred from the inlet side wafer cassette onto the hot plate in the surface treatment chamber, and the wafer is transferred to 110 ° C. for 1 hour.
The Xe ₂ excimer lamp was brought close to a distance of 3 mm from the wafer surface while baking for a minute, and the entire surface of the wafer was irradiated with an exposure dose of 1 mJ / cm ² . Subsequently, the wafer was moved to a developing cup and developed with a 2.38% tetramethylammonium hydroxide aqueous solution.

The processing performed in this example will be described below.
It is Ri. Xe_TwoFor the first substrate surface treatment with excimer light
In general, the substrate surface treated with HMDS usually has H
Amine derived from MDS remains, and chemicals are formed on this substrate.
When the amplification resist film is formed, it is generated from the photo-acid generator.
This amine deactivates a part of the acid in the chemically amplified resist,
Therefore, when the chemically amplified resist is a positive type, FIG.
As shown in (a), the formed resist pattern 15
The footing 152 may be recognized in 1. Xe _TwoExhaust
When surface treatment is performed with monochromatic light such as striped light, the substrate surface
Residual HMDS is efficiently oxidized,
Apply an amplified resist to form a resist pattern
However, hemming as in the past cannot be recognized.

Next, the chemically amplified resist coated on the substrate which was entirely irradiated with Xe ₂ excimer light was selectively exposed by a KrF excimer laser stepper, and photoacid was generated in the exposed portion (photosensitive portion) according to the exposure pattern. Acid is generated from the agent. Of the acids generated in the resist film, some of them that exist near the surface layer are deactivated by amine amines that are present in trace amounts in the air, so that when the chemically amplified resist is also positive, As shown in FIG. 15A, the T-top 153 is formed in the formed resist pattern 151. When the surface of the resist that has generated the acid from the photo-acid generator is subjected to a surface treatment with monochromatic light such as Xe ₂ excimer light, only the surface layer is oxidized to supplement the acid, and the surface layer is baked at the same time. Only the developer can be solubilized in the developer to prevent the T-top shape from being generated.

As described above, the chemically amplified resist pattern formed by using the substrate processing method of the present invention has the structure shown in FIG.
As shown in (b), neither the hem nor the T-top is recognized. In this example, when the cross section of the formed resist pattern was observed, it was confirmed that a 0.25 μm line-and-space pattern could be resolved without causing T-top or skirting.

On the other hand, in a resist pattern formed by using an ordinary spin coater, a hot plate, and a developing device without performing the entire irradiation treatment of Xe ₂ excimer light as described above, the skirting at the substrate interface and the pattern surface layer Part T
-A top shape has occurred.

[Embodiment 18] In this example, ashing of a resist pattern will be described. Made by Zeon Corporation
The photomask substrate on which a resist pattern having a film thickness of 0.3 μm was formed using a ZEP-520 type electron beam resist was transferred from the exit side wafer cassette onto the hot plate in the surface treatment chamber using the apparatus of Example 1, and the lamp was used here. the closer the wafer surface at a distance of 0.3 mm, in an oxygen atmosphere for 10 minutes Xe ₂
The entire surface was irradiated with excimer light. After the irradiation, the substrate was transferred to the exit side wafer cassette. After that, when the surface of the substrate was observed, it was found that the resist pattern could be reliably removed.

[Embodiment 19] Here, the removal of residues of a resist pattern will be described. The photomask substrate on which a resist pattern having a film thickness of 0.4 μm was formed using ZEP-520 type electron beam resist manufactured by Zeon Corporation was transferred from the exit side wafer cassette onto the hot plate in the surface treatment chamber using the apparatus of Example 1. Then, the lamp was brought closer to the distance of 0.3 mm from the wafer surface, and the whole surface was irradiated with Xe ₂ excimer light for 1 minute in the air. After the irradiation, the substrate was transferred to the exit side wafer cassette. After that, when the surface of the substrate was observed, it was found that the scum existing between the resist patterns and at the pattern edge before the irradiation treatment could be removed.

[Embodiment 20] Here, a hydrophilic treatment of a novolak resist will be described. ZIR-S185 resist manufactured by Nippon Zeon Co., Ltd. is spin-coated on a silicon wafer and the temperature is 100 ° C
After baking for 1 minute, selective exposure was performed using an i-line stepper. Then, using the surface treatment apparatus of Example 1, the lamp was brought closer to a distance of 5 mm from the wafer surface and Xe ₂ excimer light was emitted.
The whole surface was irradiated for 10 seconds. Subsequently, it was developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 60 seconds. When the formed resist pattern was observed with a wafer inspection device manufactured by KLA, Inc. in the United States, the development defect rate due to microbubbles found in a resist pattern similarly patterned using a wafer not irradiated with excimer light was 1 /
It was confirmed that it was improved to 100 or less.

[Embodiment 21] Here, manufacture of an MR element for an MR head by a lift-off method will be described. FIG.
As shown in (a), the alumina layer 1 is formed on the support material 161.
62, a lower shield layer 163 of NiFe and a lower gap layer 164 of alumina are sequentially formed thereon, and an MR for forming an MR element on the lower gap layer 164.
A substrate provided with the film 165 is prepared. Next, M on the substrate surface
The R film 165 is patterned to form the MR element 166 as shown in FIG. Then, the terminal 1 is formed on the lower gap layer 164 of the substrate using the mask 167.
68 is formed (FIG. 16C), and the mask 167 is removed by lift-off (FIG. 16D). afterwards,
The lower shield layer 163 and the lower gap layer 164 are patterned by ion milling to form the lower shield 1.
63 'and lower gap 164' are formed (FIG. 16).
(E)). On the other hand, as shown in FIG.
The first patterning of the substrate shown in (a) is performed to form a lower shield 163 'and a lower gap 164' (FIG. 17 (a)), followed by formation of an MR element 166 and formation of a terminal 168 by lift-off ( After FIG. 17B, the second shield 163 ′ and the lower gap 164 ′ are subjected to the second patterning to form the final shape of the lower shield 163 ″.
It does not matter if the lower gap 164 ″ is formed.

The formation of the mask 167 when forming the terminal 168 of FIG. 16 may be similar to the method described with reference to FIGS. 4 and 5, for example. That is, after patterning the MR element 166, polymethylglutarimide manufactured by Japan MacDermid Co., Ltd. was spin-coated with a thickness of 0.3 μm on the first layer as a two-layer structure resist using the spin coater of Example 2.
After baking at 0 ° C. for 2 minutes, a positive resist (AZP manufactured by Hoechst Co.) was dropped on the upper layer, spin-coated to a thickness of 2.0 μm, and baked at 110 ° C. for 2 minutes. After exposing the terminal pattern with a g-line stepper, only the upper layer was developed with a 2.38% tetramethylammonium hydroxide aqueous solution. Next, with 172 nm light (Xe ₂ excimer light) at an irradiation distance of 1 mm
After performing the entire surface irradiation treatment for 20 seconds, similarly develop the lower layer,
A two-layer resist pattern was formed. The formed pattern has a shape in which the lower layer digs into the bottom of the upper layer by 1.6 μm from the side edge of the upper layer, and the minimum dimension that is the core width.
As shown in FIG. 7 (resist pattern part with upper layer width of 3 μm)
As shown in (a), the lower layer was completely removed and became hollow. This can be easily confirmed by observing from above with an optical microscope.

Subsequently, in order to form the terminal 168, a metal film to be the terminal is sputtered, and then the two-layer resist pattern used as the mask is removed with a resist remover (MS-2001 manufactured by Fuji Hunt Co.) and ethanol is used. After cleaning and drying, the terminals 168 were lifted off, and then the lower shield was patterned. As a result, a good terminal thin film without burrs could be formed on the terminal portion. The variation of the MR core width formed here is ± 0.
It was 1 μm.

On the other hand, as a lift-off mask, a general lift-off single-layer resist (AZ5214E manufactured by Hoechst) was used in place of the two-layer resist, patterning was performed by the image reversal method, and lift-off was performed with acetone to perform terminal formation in the same manner. When I tapped it, a burr occurred on the terminal. Further, the core width also had a large variation of 3 μm ± 0.5 μm.

[Embodiment 22] Similar to Embodiment 21, the terminals are formed on the substrate on which the lower shield, the lower MR gap and the MR element are formed. In this example, the MR element is patterned after the resist pattern is formed. Fig. 18,
Shown with reference to FIG. Note that in FIGS. 18 and 19,
The support material and alumina layer below the lower shield layer are omitted for ease of explanation.

As shown in FIG. 18A, Ni is formed on an alumina layer (not shown) provided on a support material (not shown).
Fe lower shield layer 183, alumina lower gap layer 184, and MR film 185 for forming an MR element.
Using a substrate on which the layers are sequentially formed, polymethylglutarimide manufactured by Japan MacDermid Co., Ltd. is spin-coated to a thickness of 0.3 μm as the first layer of the two-layer structure resist using the coater cup of the spin coater of Example 2 (see FIG. 9). Then, after baking at 180 ° C. for 2 minutes to form the first-layer resist film 186, the substrate is transferred onto a hot plate in the surface treatment chamber, and the irradiation distance is 1 mm with 172 nm light (Xe ₂ excimer light).
The whole surface was irradiated for 20 seconds. Next, the substrate is returned to the coater cup and rotated, and a positive type resist (AZP manufactured by Hoechst) is dropped, spin-coated to a thickness of 2.0 nm, and baked at 110 ° C. for 2 minutes to form a second-layer resist film 187. Was formed. Then, as shown in FIG. 18C, the terminal pattern was exposed by irradiating a g-line 188 having a predetermined pattern with a g-line stepper, and then developed with a 2.38% tetramethylammonium hydroxide aqueous solution. On this occasion,
Both resist films 186 and 187 are developed at the same time.
A two-layer resist pattern 189 as shown in (d) was formed. The two-layer resist pattern 189 thus formed has a shape in which the lower layer is 1.0 μm deeper than the upper layer. This can be confirmed by observing from above with an optical microscope.

Next, the MR film 185 is patterned by ion milling using the two-layer resist pattern 189 as a mask to form the MR element 190 (FIG. 19A).
Sputtering the metal film 191 to be the terminal (FIG. 19B)
Then, the two-layer resist pattern 189 is removed with a resist remover (Fuji Hunt MS-2001) (FIG. 19 (c)).
Then, after washing with ethanol and drying to form a terminal, the lower shield was patterned to form a lower shield similar to that illustrated in FIGS. 16E and 17C. As a result, a good terminal thin film without burrs could be formed on the terminal portion. The variation in the MR core width formed here was ± 0.2 μm with respect to the core width of 4 μm.

[0144]

As described above, according to the present invention,
It is possible to provide a thin film surface with good uniformity effectively in a simple process in a short time, which can improve the adhesion between various thin films on the substrate, which has been difficult in the past, and further improve the shape of the resist pattern. Prevention of development failure can be realized. Also,
According to the present invention, it is possible to provide an excimer light irradiation device that enables uniform exposure with the above effects. By using these methods and devices, various semiconductor devices having a multilayer structure (eg, IC, LSI, VLSI,
ULSI, liquid crystal display (LCD), PDP, MC
M) and mass production yield in the manufacture of magnetic heads,
The effect of greatly improving reliability is achieved.

[Brief description of drawings]

FIG. 1 is a perspective view illustrating an MR element portion of an MR head.

FIG. 2 is a diagram illustrating the first half of the manufacturing process of the MR element part.

FIG. 3 is a diagram illustrating the latter half of the manufacturing process of the MR element part.

FIG. 4 is a diagram illustrating the first half of another manufacturing process of the MR element portion.

FIG. 5 is a diagram illustrating the latter half of another manufacturing process of the MR element unit.

FIG. 6 is a top view illustrating a hollow lift-off process.

FIG. 7 is a cross-sectional view illustrating a hollow lift-off process.

FIG. 8 is a diagram illustrating an apparatus according to one aspect of the present invention.

FIG. 9 is a diagram illustrating an apparatus according to another aspect of the present invention.

FIG. 10 is a diagram illustrating an apparatus according to another aspect of the present invention.

FIG. 11 is a diagram illustrating an apparatus according to yet another aspect of the present invention.

FIG. 12 is a diagram illustrating an apparatus capable of improving irradiation distribution.

FIG. 13 is a diagram illustrating a means for extracting parallel light from a light source.

FIG. 14 is a graph showing the results of Example 6.

FIG. 15 is a diagram illustrating a cross-sectional shape of a resist pattern formed using a chemically amplified resist.

FIG. 16 is a diagram illustrating a process of a lift-off method in a twenty-first embodiment.

FIG. 17 is a diagram illustrating another method of forming the lower shield according to the twenty-first embodiment.

FIG. 18 is a diagram illustrating the first half of the process of the lift-off method in Example 22.

FIG. 19 is a diagram for explaining the latter half of the steps of the lift-off method in the twenty-second embodiment.

[Explanation of symbols]

 11, 25, 45, 61, 166, 190 ... MR element 12, 33 ', 50', 62, 168 ... Terminal 21, 41, 161, ... Support material 22, 42, 162 ... Alumina layer 23, 43, 163 ... Lower part Shield layer 24, 44, 164 ... Lower gap layer 26, 46, 63 ... First layer resist film 27, 48 ... Monochromatic light 29, 47, 64 ... Second layer resist film 33, 50 ... Terminal forming material film 81, 91 , 101, 111 ... Surface treatment chamber 82, 92, 102, 112 ... Hot plate 83, 93, 103, 113 ... Excimer lamp 84, 94, 104, 114 ... Inlet side wafer cassette 85, 95, 105, 115 ... Outlet side Wafer cassette 87, 97, 107, 117 ... Ozone generator 98 ... Coater cup 99 ... Hot plate 108 ... CVD chamber 11 8 ... Development cup

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koji Nozaki 4-1-1 Kamiotanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Limited (72) Inventor Miwa Igarashi 4-chome, Ueodaanaka, Nakahara-ku, Kanagawa No. 1 in Fujitsu Limited (72) Inventor Takahisa Namiki 4-1-1 Kamiotanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture 1-1 In-Fujitsu Limited (72) Inventor Yuko Kaimoto 4-chome, Ueodaanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture No. 1 in Fujitsu Limited (72) Inventor Yoko Kuramitsu 4-1-1 Kamiotanaka, Nakahara-ku, Kawasaki City, Kanagawa Kanagawa Prefecture (72) Inventor Tsuyoshi Shibamoto 4-chome, 1-Uedota, Nakahara-ku, Kawasaki, Kanagawa No. 1 within Fujitsu Limited (72) Inventor Hiroshi Shirataki 4-1-1 Kamitadanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Inside the company (72) Eiichi Hoshino 4-1-1 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Limited (72) Inventor Yuichi Yamamoto 4-1-1, Kamedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Incorporated (72) Inventor Toshikatsu Minagawa 4-1-1 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited

Claims (20)

[Claims] 1. A step of subjecting a substrate to be processed before or after forming a fine pattern to monochromatic light having a half-value width of 30 nm or less at a wavelength in a range from far ultraviolet to vacuum ultraviolet, and performing a whole surface irradiation treatment. Fine processing method. Wherein said monochromatic light, Ar _2, Kr ₂ as a light source,
The method according to claim 1, wherein the excimer light is any one of F ₂ , ArBr, Xe ₂ , ArCl, ArF, KrBr, KrCl, and KrF. 3. The method according to claim 2, wherein the excimer light consists of parallel components only. 4. The substrate to be processed has a conductive film on its surface layer.
The method according to any one of claims 1 to 3, which is a substrate on which an insulating film or a resist film is formed. 5. The conductive film, the insulating film or the resist film is formed on the substrate after the monochromatic light is entirely irradiated on the substrate to be processed, according to any one of claims 1 to 4. Method. 6. A step of introducing at least one of oxygen, ozone, nitrogen, and air into the atmosphere of the substrate to be processed during the irradiation of the monochromatic light, and the substrate to be processed 50 to 5
The method according to any one of claims 1 to 5, comprising at least one of the steps of baking at 00 ° C. 7. A monochromatic light having a half width of 30 nm or less at a wavelength in a range from far ultraviolet to vacuum ultraviolet can be irradiated with an illuminance distribution within ± 15% on the entire surface of a substrate to be processed before or after forming a fine pattern. A substrate processing apparatus having a mechanism. 8. A means for spin coating, and for transporting the substrate to the monochromatic light irradiation position before and / or after transporting the substrate to the spin coating position. Including means of
The device according to claim 7. 9. Irradiating the substrate with the monochromatic light before and / or after transporting the substrate to a film forming position, including means for forming a film on the substrate to be processed. 8. The apparatus of claim 7 including means for transport placement into position. 10. A means for developing a resist, wherein the substrate is transported to the irradiation position of the monochromatic light before and / or after the substrate to be processed is transported to the resist developing position. 8. The device of claim 7, including means for. 11. The method according to claim 7, further comprising means for adjusting the temperature of the substrate to be processed arranged at a position for irradiating the monochromatic light within a range of 50 to 500 ° C. apparatus. 12. The method according to claim 7, further comprising means for introducing at least one of oxygen, ozone, nitrogen and air into the atmosphere of the substrate to be processed when the monochromatic light is irradiated. The device according to. 13. A means for adjusting the distance between the light source of the monochromatic light and the surface of the substrate to 0.1 to 20 mm after arranging the substrate to be processed at the irradiation position of the monochromatic light. The apparatus according to any one of 7 to 12. 14. The monochromatic light source and / or one or both of the substrates to be processed are moved or rotated while maintaining the distance between the light source and the surface of the substrate to be processed at 0.1 to 20 mm. Or an apparatus according to any one of claims 7 to 13 comprising means for moving and rotating. 15. The monochromatic light is Ar ₂ , K as a light source.
r ₂ , F ₂ , ArBr, Xe ₂ , ArCl, ArF, KrBr, KrCl, KrF
The excimer light using any one of claims 1 to 7,
The device according to any one of 4 to 4. 16. The apparatus according to claim 15, wherein the excimer light consists of parallel components only. 17. A semiconductor device comprising a substrate manufactured by a method according to any one of claims 1-6. 18. A magnetic head including a substrate manufactured by the method according to any one of claims 1 to 6. 19. A method of manufacturing a magnetoresistive effect head including a magnetoresistive effect element for reproducing a signal magnetic field from a medium and having shields on both sides of the element, wherein a terminal pattern is formed on the magnetoresistive effect element by lift-off. In forming the reverse resist pattern of the terminal pattern in the step of forming the resist pattern, a resist pattern is formed by narrowing only a region near the upper part of the magnetoresistive effect element, which becomes the lead core width of the reverse resist pattern, and only the resist pattern in this region is below. A method of manufacturing a magnetoresistive effect head, characterized in that: 20. The reverse resist pattern is formed on a substrate having a surface layer for forming the magnetoresistive effect element, and the upper resist film is made of a material having strong absorption in a wavelength range from far ultraviolet to vacuum ultraviolet. After forming a resist film having a layered structure and exposing the resist in a predetermined pattern, the whole surface of the substrate is irradiated with monochromatic light having a half width of 30 nm or less at a wavelength in the range from far ultraviolet to vacuum ultraviolet, and then the resist having the two layered structure. The film is developed to form a two-layer resist pattern in which the resist pattern of the lower layer digs under the resist pattern of the upper layer to form a thin film for forming the terminal pattern. The method according to claim 19, wherein the layer resist pattern is removed by dissolution and peeling.