JPH06267934A - Material and method for wiring pattern formation - Google Patents

Abstract

PURPOSE:To easily form a wiring patterns in high resolving power without using the conventional dry-etching technology. CONSTITUTION:A semiconductor silicon substrate 11 is coated with a metal containing high-molecular organic film as the high molecular organic film 12 to be baked later. Next, fine resist patterns 13p are formed using a resist film 13 coated on this high molecular organic film 12 as a mask. Next, a reducing agent 15 comprising NaBH4 is dripped upon these resist patterns 13 p for ten minutes at 50 deg.C. Later, when the reducing agent 15 is removed, metallic layers 16 comprising Cu 200nm thick as fine metallic wiring patterns are formed on the surface of the high molecular organic film 12 Finally, the resist patterns 13p are removed and then the high molecular organic film 12 is heat-treated so that a polysilicon base high molecular compound may be thermal-bridged to form an insulating film 17.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring pattern forming material used when a semiconductor element or an integrated circuit is formed by pattern formation using a lithography technique, and a wiring pattern forming method using the same material. It is a thing.

[0002]

2. Description of the Related Art Conventionally, in the manufacture of ICs and LSIs, pattern formation is performed by photolithography using ultraviolet rays. Along with the miniaturization of the element, the numerical aperture of the stepper lens has been increased and the use of a short wavelength light source has been promoted. However, this has a drawback that the depth of focus becomes shallow. In addition, the resist pattern formed by this photolithography was transferred by wet etching, but it is difficult to transfer a fine pattern because it has no anisotropy. Currently, pattern transfer is performed by dry etching using gas plasma. It is carried out.

FIG. 2 is an explanatory diagram of a conventional resist process and a wiring pattern forming method using a dry etching technique. On the semiconductor substrate 31, a silicon oxide film is deposited as an insulating film 32 with a thickness of 1 μm, and an aluminum film is deposited as a metal film 33 with a thickness of 0.8 μm (FIG. 2A). As the resist film 34, a photoresist AZ microposit (Shipley Company) is applied thereon with a thickness of 1.2 μm. A desired pattern is exposed from the resist film by ultraviolet rays 35 having a wavelength of 365 nm (FIG. 2B). The exposed resist film 34 is developed for 1 minute using an organic alkaline aqueous solution to obtain a resist pattern 34P (FIG. 2).
(C)). Next, using the resist pattern 34P as a mask, dry etching of the aluminum metal film 33 is performed using CCl ₄ and O ₂ gas plasma to transfer the pattern (FIG. 2D). A fine wiring pattern can be formed by using the resist process and the dry etching technique as described above.

The photoresist used in this photolithography is composed of a novolac resin as a polymer compound as a main component, and contains a photoreactive compound and the like. However, when the exposure wavelength is shortened, the light absorption of the novolac resin is large, so that the light does not sufficiently reach the lower part of the resist film, and the resist pattern cannot be accurately formed. Therefore, the polymer compound, which is the main component of the resist, is replaced with a novolac resin, a polyvinylphenol resin that absorbs less light, or an aliphatic hydrocarbon compound to form the resist. However, since these resists have low heat resistance and insufficient dry etching resistance, when the aluminum metal film is dry-etched, the dimensional shift of the pattern becomes large because the selection ratio between the resist and the metal film is small. There are drawbacks. Further, when forming a pattern on an aluminum metal film, since the exposure light is highly reflected from the substrate, the resist pattern may be inversely tapered, which makes it difficult to form an accurate pattern. . Also, dry etching of aluminum metal film is technically very difficult, the shape after etching tends to be a reverse taper pattern, it is difficult to perform accurate pattern transfer, and there is a problem of corrosion of aluminum wiring after etching. There is also.

Further, with the miniaturization of the pattern size of LSI elements and the manufacture of ASICs, electron beam lithography has come to be used as a lithography technique. An electron beam resist is indispensable for forming a fine pattern by this electron beam lithography. Among them, polymethylmethacrylate (PMMA), which is a positive electron beam resist, is known to have the highest resolution, but its low sensitivity is a drawback. Therefore, in recent years, many reports have been made to increase the sensitivity of positive electron beam resists, for example, polybutyl methacrylate, a copolymer of methyl methacrylate and methacrylic acid, a copolymer of methacrylic acid and acrylonitrile. ,
Positive type electron beam resists such as copolymers of methyl methacrylate and isobutylene, polybutene-1-sulfone, polyisopropenyl ketone, and fluorine-containing polymethacrylate have been announced. All of these resists are resists in which the main chain is easily cleaved by an electron beam by introducing an electron-withdrawing group into the side chain or by introducing a bond that is easily decomposed into the main chain. Although it is aimed at increasing the sensitivity, it cannot be said that it sufficiently satisfies both the resolution and the sensitivity. Moreover, since it cannot be said that the dry etching resistance and heat resistance are sufficiently good,
It is difficult to use as a mask for dry etching, and its use is limited.

Therefore, in electron beam lithography, in order to overcome the drawbacks such as the dry etching resistance and poor heat resistance of the electron beam resist, the influence of the forward scattering of electrons and the proximity effect due to back scattering on the pattern accuracy, etc. , A multi-layer resist method in which the function of the resist is divided into a photosensitive layer and a planarizing layer is used. FIG. 3 is an explanatory diagram of a wiring pattern forming method using a conventional three-layer resist process in electron beam lithography. A silicon oxide film having a thickness of 1 μm is deposited as an insulating film 42 on the semiconductor substrate 41,
Further, an aluminum film having a thickness of 0.8 μm is deposited as the metal film 43. In order to suppress the proximity effect, a high-molecular organic film is applied as the lower layer film 44 to a thickness of 2 to 3 μm and heat treatment is performed thereon. Further, an inorganic film such as a silicon oxide film or an inorganic polymer film such as SOG (spin-on-glass) is applied thereon to a thickness of 0.2 μm as an intermediate layer 45, and an electron beam resist is used as an upper layer resist film 46 thereon. 0.5 μm
Thick coating (FIG. 3A). A pattern is drawn on the resist film by the electron beam 47 (FIG. 3).
(B)). The exposed resist film 46 is developed with a developing solution dedicated to an organic solvent to obtain a resist pattern 46P (FIG. 3 (c)). Next, the intermediate layer 45 and the lower layer film 44 are dry-etched using the resist pattern 46P as a mask, and further the aluminum metal film 43 of the substrate is dry-etched using the pattern as a mask.
The pattern is transferred (FIG. 3 (d)). A fine wiring pattern can be formed by using the above-described multilayer resist process.

However, in such a three-layer resist process, the process becomes more complicated, defects and dust are often generated, and when the selection ratio of the intermediate layer and the lower layer film to etching is small, the pattern transfer is performed. There is a problem that the dimensional shift becomes larger by 0.1 μm or more, and it cannot be said to be practical. Further, when the aluminum metal film is dry-etched using this resist pattern as a mask, there is a drawback in that side wall deposits occur on the aluminum metal film and the resist pattern, and pattern transfer cannot be performed accurately.

[0008]

Although the three-layer resist process is an effective method as described above, there are problems such as complicated steps and variations in resist dimensions during pattern transfer.
In the case of electron beam lithography, incident electrons are scattered inside the resist, and further, the electrons reaching the substrate are backscattered and return to the inside of the resist again to expose the resist to light. Since the pattern accuracy is greatly deteriorated due to the influence of the proximity effect, it is necessary to apply a thick lower layer film to suppress backscattered electrons. In addition, since these electron beam resists use an organic solvent as a developing solution, the sensitivity variation and the dimension variation of the resist are large, the process margin is small, swelling occurs during development, and the resist pattern can be accurately formed. Is not possible, and environmental pollution,
There are also problems such as harmfulness to the human body.

Further, in the case of photolithography, since an alkaline aqueous solution is used as a developing solution, swelling and the like due to development is small, but the resist pattern is determined only by the contrast of solubility in exposed and unexposed areas with respect to the alkaline aqueous solution. Therefore, there is also a problem that a resist which cannot obtain a sufficient contrast in the wet development has a taper pattern and a fine vertical pattern cannot be formed. Further, when forming a pattern on an aluminum metal film, since the exposure light is highly reflected from the substrate, the resist pattern may be inversely tapered, which makes it difficult to form an accurate pattern. .

Further, these resists have low heat resistance,
Further, since the dry etching resistance is not sufficient, there is a drawback that the pattern size shift becomes large when the aluminum metal film is dry-etched due to the small selection ratio between the resist and the metal film. Also, dry etching of aluminum metal film is technically very difficult, the shape after etching tends to be a reverse taper pattern, it is difficult to perform accurate pattern transfer, and there is a problem of corrosion of aluminum wiring after etching. There is also. Further, when the aluminum metal film is dry-etched using the three-layer resist pattern as a mask, there is a drawback that a deposit is generated on the side walls of the aluminum metal film and the resist pattern, and the pattern transfer cannot be performed accurately.

When forming a wiring pattern, a base insulating film is deposited, a metal film is deposited, a resist pattern is formed thereon, and the metal film is etched using the resist pattern as a mask. It has to go through complicated steps and is very expensive. Furthermore, after forming this wiring pattern, an oxide film or the like is deposited as an interlayer insulating film. However, since this wiring pattern has a high aspect ratio, the interlayer insulating film cannot be accurately and flatly deposited, and voids are formed. This is a factor that causes a decrease in yield.

In order to solve these problems, the present inventors have completed a wiring pattern forming material capable of forming a fine wiring pattern and a wiring pattern forming method using these.

[0013]

The wiring pattern forming material of the present invention comprises a high molecular weight organic compound and an organic metal complex or a metal salt, and is formed by treating the film surface with a reducing solution. An organic metal complex or a metal salt is deposited on a film surface and heat-treated to cause a cross-linking reaction of the polymer organic compound to form an insulating film. And, desirably, in addition to the polymer organic compound, the organometallic complex, or the metal salt, a crosslinking agent is contained. Further, it is desirable that the high molecular weight organic compound is a polysilane type, a polysilicon type, or a polyimide type high molecular weight organic compound.

The wiring pattern forming method of the present invention is
On a semiconductor substrate, a high molecular weight organic compound, an organometallic complex,
Alternatively, a step of applying a polymer organic film made of a metal salt and heat-treating, a step of applying a resist on the polymer organic film and heat-treating, and applying a high-energy beam such as an ultraviolet ray or an electron beam to the resist film. A step of exposing a desired pattern by irradiation, a step of developing the resist film to form a resist pattern and selectively exposing the polymer organic film, and a reducing liquid is dropped on the resist pattern, A step of depositing an organometallic complex or a metal salt contained in the polymer organic film on the surface of the selectively exposed polymer organic film to form a metal layer, and removing the resist pattern and heat treatment By cross-linking and curing the polymer organic compound contained in the polymer organic film, thereby forming an insulating film. Than it is. And preferably,
In addition to the polymer organic compound, an organometallic complex, or a metal salt, a crosslinking agent is included, and the polymer organic compound is a polysilane-based, polysilicon-based, or polyimide-based polymer organic compound, and The heat treatment temperature when the insulating film is formed by cross-linking and hardening the high molecular weight organic compound is 200
The method is characterized in that the temperature is not lower than 0 ° C.

That is, a polymer organic film in which a polymer organic compound is mixed with an organometallic complex or a metal salt is used, and this film is surface-treated with a reducing solution, so that the organometallic complex or metal is formed on the surface of the film. Since the salt can be deposited to form the metal layer, a fine wiring pattern can be easily and accurately formed. In particular, there is no need to use a difficult dry etching technique for a metal film, which has had many problems in the past, and there is no problem of corrosion of a metal wiring after etching. Furthermore, when pattern formation is performed using the lithography technique, there is no problem such as deterioration of the resist pattern shape due to the influence of the proximity effect of the electron beam or reflection from the substrate, and since dry etching is not required, the resist The dry etching resistance is not required, the resist film thickness can be reduced, and an accurate and fine resist pattern can be formed. Using this resist pattern as a mask, the metal in the lower polymer organic film is selectively deposited to form the metal layer, so the contrast of the resist pattern does not pose any problem, and the resist pattern size is the same as the wiring pattern. Since the dimensions are large, an accurate and fine high-resolution wiring pattern can be formed without a large dimension shift of the resist pattern occurring during dry etching.

By using this method, the metal wiring layer and the insulating film can be formed at the same time.
Compared with the conventional process of forming a wiring pattern, the process can be greatly simplified and shortened, and the cost can be significantly reduced. Further, since no step of the conventional metal wiring is generated at all, there is no disconnection of the interlayer insulating film, which can greatly contribute to the improvement of the yield.

[0017]

According to the present invention, an accurate and high-resolution fine wiring pattern can be easily formed by the above metal-containing polymer organic film and the process using them. In particular, there is no need to use dry etching technology when forming conventional wiring patterns, and there is no problem of corrosion of metal wiring,
Further, the dry etching resistance of the resist and the shape of the resist pattern do not pose any problem. Furthermore, the reflection of exposure light from the substrate, which is a problem in conventional lithography technology,
There is no problem such as deterioration of the resist pattern shape due to the influence of the proximity effect of the electron beam, and the resist pattern only needs to be a mask for selectively reducing the underlying polymer organic film, and the contrast of the resist pattern shape is Since it is not necessary at all and the resist film thickness can be made thin, it is possible to accurately and easily form a fine pattern with high resolution.

Further, by using the present invention, the metal wiring layer and the insulating film can be formed at the same time, so that compared with the conventional long process of forming a wiring pattern by repeatedly performing deposition, lithography and dry etching. The process can be extremely simplified and shortened, and the cost can be significantly reduced. Furthermore, since no step of the conventional metal wiring having a high aspect ratio is generated at all, there is no disconnection of the interlayer insulating film, which can greatly contribute to the improvement of the yield. Moreover, since the metal is collected on the surface of the polymer organic film to form the metal layer, the metal wiring layer having high conductivity can be formed. Therefore, by using the present invention, easily,
Effectively works for accurate and high-resolution wiring pattern formation with few defects.

[0019]

First, the outline of the present invention will be described. The present invention uses a polymer organic film, which is a mixture of a polymer organic compound and an organometallic complex or a metal salt, as a wiring pattern forming material. It is intended to solve the above problems by depositing a metal complex and a metal salt to easily form a metal layer. In particular, a polysilane-based, polysilicon-based, or polyimide-based polymer organic compound is used as the polymer organic compound. Further, it is desirable that these high molecular weight organic compounds cause a crosslinking reaction by heat treatment at 200 ° C. or higher to be cured to form an insulating film, or that the high molecular weight organic film contains a crosslinking agent therefor. . That is, the polymer organic compound as the main polymer used here has a structure as shown in Chemical formula 1.

[0020]

[Chemical 1]

A cross-linking agent for causing a cross-linking reaction by heat treatment has a structure as shown in Chemical formula 2.

[0022]

[Chemical 2]

The high molecular weight organic compound, which is the main polymer, undergoes a cross-linking reaction (Chemical Formula 3) with these cross-linking agents by heat treatment to form a high molecular weight and form an insulating film.

[0024]

[Chemical 3]

The above-described reaction proceeds and the three-dimensional crosslinking reaction proceeds. That is, polysilane-based, polysilicon-based,
Alternatively, the surface of the polymer organic film obtained by mixing the polyimide-based polymer organic compound and the organic metal complex or the metal salt is reduced with a reducing solution to form a metal layer on the film surface, and then heat treatment is performed. A high molecular weight organic compound is caused to undergo a crosslinking reaction to form an insulating film.

This high-molecular organic compound, an organometallic complex,
Alternatively, a polymer organic film mixed with a metal salt is treated with a reducing solution to cause phase separation between the polymer organic compound and the metal, and a metal layer is formed on the film surface of several 100 nm. It is used as a wiring pattern. Further, after this, a heat treatment is performed to cross-link the polysilane-based, polysilicon-based, or polyimide-based high-molecular organic compound to be used as an insulating film. Therefore, the contrast and shape of the resist pattern formed by the lithographic technique do not matter, and the dry etching resistance of the resist is not required, so that a fine pattern can be easily formed. By using these metal-containing polymer organic compounds as a wiring material, a wiring pattern can be easily formed, and at the same time, an insulating film can be formed, and it is not necessary to use a dry etching technique. In addition, it is possible to easily and accurately form a fine wiring pattern without a dimensional shift due to etching during pattern transfer.

Example 1 A wiring pattern forming material and a pattern forming method according to an example of the present invention will be described below.

A mixture was prepared by dissolving 10 g of the silicon-based polymer organic compound as shown in Chemical formula 4 and 0.1 g of a metal salt consisting of CuCl ₂ in an N, N-dimethylformamide solution.

[0029]

[Chemical 4]

This mixture was gently stirred at 25 ° C. for 60 minutes, and the insoluble matter was filtered off to obtain a uniform solution. This solution was dropped on a semiconductor silicon substrate and the speed was adjusted to 1 at 2000 rpm.
Spin coating was performed for a minute. This substrate was baked at 80 ° C. for 90 seconds to obtain a polymer organic film having a thickness of 1.0 μm. NaBH on the surface of this polymer organic film
_The reducing agent consisting of ₄ was added dropwise, and this state was maintained at 50 ° C. for 10 minutes. After that, by removing the reducing agent, it was possible to form a metal layer of Cu with a thickness of 200 nm on the surface of the polymer organic film. Furthermore, this polymer organic film
By heat-treating at 00 ° C., the poly-silicon polymer organic compound was thermally cross-linked, and the insulating film could be formed.

As described above, according to the present embodiment, the high molecular organic compound of polysilicon type is used as the main polymer, the metal salt is mixed, and the surface treatment with the reducing solution is performed to easily obtain the high molecular organic compound. A metal layer can be formed by causing phase separation from a metal salt, and at the same time, an insulating film can be easily formed by cross-linking a polysilicon-based polymer organic compound.

Further, the high molecular weight organic compound may be a polysilane type or a polyimide type in addition to the polysilicon type, and a crosslinking agent may be included to make the high molecular weight organic compound easier to crosslink.

Furthermore, in addition to CuCl ₂ as the metal salt, NiCl ₂ , CoCl ₂ , Ni (ClO ₄ ) ₂ or the like may be used, and a reducing solution other than NaBH ₄ may be used as the reducing agent. .

(Second Embodiment) A wiring pattern forming method according to a second embodiment of the present invention will be described below with reference to the drawings.

1 and 2 are sectional views showing the steps of a method for forming a wiring pattern according to an embodiment of the present invention.
As the polymer organic film 12 on the semiconductor silicon substrate 11,
The metal-containing polymer organic film obtained in Example 1 was 1.0 μm thick.
It was applied thickly and baked at 70 ° C. for 60 seconds (FIG. 1A). A 0.3 μm thick AZ microposit (Shipley Company) was applied as a resist film 13 on the polymer organic film and baked at 70 ° C. for 60 seconds. From above this resist film, using ultraviolet rays 14 of 248 nm,
Pattern exposure was performed at an exposure dose of 30 mJ / cm ² (see FIG. 1).
(B)).

By developing this wafer for 1 minute using an organic alkaline aqueous solution, a fine resist pattern 13p having a line and space of 0.3 μm can be formed, and a metal-containing polymer organic layer as a lower layer can be selectively formed. Membrane 1
2 could be exposed (FIG. 1 (c)). A reducing solution 15 made of NaBH4 was dropped on the resist pattern and kept at 50 ° C. for 10 minutes (FIG. 1 (d)). After that, by removing the reducing agent, the metal layer 16 made of Cu can be formed on the surface of the polymer organic film 12 to a thickness of 200 nm, and a fine metal wiring pattern with a width of 0.3 μm can be formed. It was possible (Fig. 1 (e)).

Next, the resist pattern 13p is removed (FIG. 1 (f)), and the polymer organic film 12 is further removed by 30.
By heat-treating at 0 ° C., the poly-silicon polymer organic compound was thermally cross-linked, and the insulating film 17 could be formed (FIG. 1G).

As described above, according to the present embodiment, by using the polysilicon type high molecular weight organic compound as the main polymer, the metal salt is mixed, and the film surface is treated with the reducing solution using the resist pattern as a mask. It is possible to easily cause a phase separation of a high molecular weight organic compound and a metal salt to form a metal layer and form a metal wiring pattern. Further, the insulating film can be easily formed by simultaneously thermally cross-linking the poly-silicon-based polymer organic compound.

At this time, the high molecular weight organic compound may be a polysilane type or a polyimide type in addition to the polysilicon type, and a crosslinking agent may be included to make the high molecular weight organic compound more easily crosslinkable. Good.

Although specific embodiments have been described with reference to the drawings, the contents of the patent are not limited to these.

[0041]

As described above, according to the present invention,
Polysilane-based, polysilicon-based, or polyimide-based polymer organic compound, and an organic metal complex, or by a surface treatment of a polymer organic film obtained by mixing a metal salt with a reducing solution, an organic metal complex on the film surface, A metal salt is deposited to easily form a metal layer. By carrying out the resist pattern as a mask at the time of this reduction treatment, it is possible to easily form a fine and highly conductive metal wiring pattern with high resolution. Further, by heat-crosslinking and curing the high molecular weight organic compound by the subsequent heat treatment, the insulating film can be easily formed simultaneously with the metal wiring. In particular, there is no need to use a difficult dry etching technique for a metal film, which has had many problems in the past, and there is no problem of corrosion of a metal wiring after etching.
Furthermore, when pattern formation is performed using the lithography technique, there is no problem such as deterioration of the resist pattern shape due to the influence of the proximity effect of the electron beam or reflection from the substrate, and since dry etching is not required, the resist The dry etching resistance is not required, the resist film thickness can be reduced, and an accurate and fine resist pattern can be formed. Using this resist pattern as a mask, the metal in the lower polymer organic film is selectively deposited to form the metal layer, so the contrast of the resist pattern does not pose any problem, and the resist pattern size is the same as the wiring pattern. Since the dimensions are large, an accurate and fine high-resolution wiring pattern can be formed without a large dimension shift of the resist pattern occurring during dry etching.

Further, by using the present invention, the metal wiring layer and the insulating film can be formed at the same time, so that compared with the conventional long process of repeatedly performing deposition, lithography and dry etching to form a wiring pattern, The process can be extremely simplified and shortened, and the cost can be significantly reduced. Furthermore, since no step of the conventional metal wiring having a high aspect ratio is generated at all, there is no disconnection of the interlayer insulating film, which can greatly contribute to the improvement of the yield. Moreover, since the metal is collected on the surface of the polymer organic film to form the metal layer, the metal wiring layer having high conductivity can be formed. Therefore, by using the present invention, easily,
An accurate and high-resolution wiring pattern with few defects can be formed, which can greatly contribute to the manufacture of an ultrahigh-density integrated circuit.

[Brief description of drawings]

FIG. 1 is a process cross-sectional view of a wiring pattern forming method according to an embodiment of the present invention.

FIG. 2 is a process cross-sectional view of a wiring pattern forming method using conventional lithography and dry etching techniques.

FIG. 3 is a process sectional view of a wiring pattern forming method using a conventional three-layer resist process.

[Explanation of symbols]

 11 semiconductor substrate 12 polymer organic film 13 resist film 14 ultraviolet light 15 reducing solution 16 metal layer 17 insulating film

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI Technical display location H01L 21/027 H05K 1/09 A 6921-4E 3/10 Z 7511-4E

Claims (5)

[Claims] 1. A wiring pattern forming material comprising a high molecular weight organic compound and an organic metal complex or a metal salt, wherein the organic metal complex or the metal salt is treated by treating the film surface with a reducing solution. A wiring pattern forming material, characterized in that the high molecular weight organic compound causes a cross-linking reaction to form an insulating film by being deposited on and heat-treated. 2. A wiring pattern forming material comprising a high molecular weight organic compound according to claim 1, an organometallic complex or a metal salt, and a crosslinking agent. 3. A wiring pattern forming material, wherein the polymer organic compound according to claim 1 or 2 is a polysilane-based, polysilicon-based, or polyimide-based polymer organic compound. 4. A step of applying a polymer organic film comprising a polymer organic compound and an organic metal complex or a metal salt on a semiconductor substrate and heat-treating, and applying a resist on the polymer organic film and heat-treating. And a step of exposing a desired pattern by irradiating the resist film with a high energy beam such as an ultraviolet ray or an electron beam, and developing the resist film to form a resist pattern to form the polymer organic film. A step of selectively exposing, a reducing solution is dropped on the resist pattern, and an organometallic complex or a metal salt contained in the polymer organic film is added to the surface of the polymer organic film that is selectively exposed. A step of depositing, forming a metal layer, and removing the resist pattern, heat treatment to cross-link and cure the polymer organic compound contained in the polymer organic film, A wiring pattern forming method and forming a Enmaku. 5. A polymer organic compound according to claim 4, and a cross-linking agent in addition to the organometallic complex or metal salt, and
The polymer organic compound is a polysilane-based, polysilicon-based, or polyimide-based polymer organic compound, and the heat treatment temperature when the insulating film is formed by crosslinking and curing the polymer organic compound is 200 ° C. or higher. And a wiring pattern forming method.