JPH03282553A - Formation of resist pattern - Google Patents
Formation of resist patternInfo
- Publication number
- JPH03282553A JPH03282553A JP2085359A JP8535990A JPH03282553A JP H03282553 A JPH03282553 A JP H03282553A JP 2085359 A JP2085359 A JP 2085359A JP 8535990 A JP8535990 A JP 8535990A JP H03282553 A JPH03282553 A JP H03282553A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- acid
- treatment
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 4
- 239000002253 acid Substances 0.000 claims abstract description 26
- 238000011161 development Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 14
- 230000018109 developmental process Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- DCERHCFNWRGHLK-UHFFFAOYSA-N C[Si](C)C Chemical compound C[Si](C)C DCERHCFNWRGHLK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 hexafluoroantimonate Chemical compound 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- VMZBNIRXGJODON-UHFFFAOYSA-N tetraphenyl-$l^{4}-sulfane Chemical group C1=CC=CC=C1S(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 VMZBNIRXGJODON-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置の製造工程で用いられるレジスト
パターンの形成方法に関し、更に詳しくは酸発生化学増
幅型レジストのレジストパターンの形成方法に係わる。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a resist pattern used in the manufacturing process of a semiconductor device, and more specifically to a method for forming a resist pattern of an acid-generating chemically amplified resist. .
「発明の概要］
特許請求の範囲第１項記載の発明は、酸発生化学増幅型
レジストを用いたレジストパターンの形成方法Ｊこおい
て、
パターン現像処理終了後に酸溶液処理を施すことにより
、
レジストパターンをキュアさせ、レジストパターンの耐
熱性を向上させる。"Summary of the Invention" The invention described in claim 1 provides a resist pattern forming method J using an acid-generating chemically amplified resist, in which the resist pattern is formed by applying an acid solution treatment after pattern development processing is completed. Cure the pattern and improve the heat resistance of the resist pattern.
特許請求の範囲第２項記載の発明は、酸発生化学増幅型
レジストを用いたレジストパターンの形成方法において
、
露光後に水処理を施した後、ベークとパターン現像を順
次施すことにより、
ネガ型レジストの場合は、露光の焦点ずれによるレジス
ト表面の幅広化（ブリッジ発生による）を防止し、ポジ
型の場合は、焦点ずれによるレジスト表面の膜減りを防
止すると共にレジスト表面を難溶化させて矩形性の良い
良好なパターニングを可能にする。The invention recited in claim 2 provides a method for forming a resist pattern using an acid-generating chemically amplified resist, in which a negative resist is formed by sequentially performing baking and pattern development after water treatment after exposure. In the case of , it prevents the width of the resist surface from widening (due to the occurrence of bridges) due to the defocus of exposure, and in the case of positive type, it prevents the resist surface from thinning due to the defocus and makes the resist surface difficult to dissolve, resulting in rectangularity. allows for good patterning.
［従来の技術］
半導体集積回路の最小寸法は、年々微細化し、今や研究
開発レベルでは０゜５μｍ以下のパターン形成が要求さ
れている。これらを達成するために、露光装置の高ＮＡ
化、露光波長の短波長化。[Prior Art] The minimum dimensions of semiconductor integrated circuits have become smaller year by year, and now, at the research and development level, pattern formation of 0.5 μm or less is required. In order to achieve these, the exposure equipment's high NA
, shortening the exposure wavelength.
レジスト材料の改良等が行なわれている。特に、従来の
高圧水銀灯を用いずＫｒＦ等の希ガスハライドのエキシ
マレーザ光源を用いたリソグラフィーは比較的容易に高
解像力を達成する手段として注目されている。このエキ
シマレーザの波長（２５０ｎｍ）より短波長になると、
例え高圧水銀灯を使ったとしても、出力か弱いため、高
感度及び高解像度なレジストの使用が望まれている。そ
こで、近年、酸発生化学増幅型レジストが特に注目され
ている。この酸発生化学増幅型レジストの概要は、ネガ
型では、アルカリ可溶樹脂に架橋剤と感光性散発剤を加
えて構成され、ポジ型では、アルカリ可溶樹脂に溶解阻
止剤（基）と感光性酸発生剤を加えて構成されている。Improvements are being made to resist materials. In particular, lithography that uses an excimer laser light source of a rare gas halide such as KrF without using a conventional high-pressure mercury lamp is attracting attention as a means to relatively easily achieve high resolution. When the wavelength becomes shorter than the wavelength of this excimer laser (250 nm),
Even if a high-pressure mercury lamp is used, the output is weak, so it is desired to use a resist with high sensitivity and high resolution. Therefore, acid-generating chemically amplified resists have attracted particular attention in recent years. The general outline of this acid-generating chemically amplified resist is that negative resists are composed of an alkali-soluble resin with a crosslinking agent and a photosensitive sporadic agent, while positive resists are composed of an alkali-soluble resin, a dissolution inhibitor (base), and a photosensitive sporadic agent. Contains a synthetic acid generator.
ネガ型の酸発生化字幅型レジストは、露光部が、感光性
酸発生剤によって生成された酸を触媒として、露光後の
ベーキング（ＦＥＢ）時に架橋不溶化し、アルカリ現像
によってネガパターンが得られる。一方、ポジ型の酸発
生化学増幅型レジストの場合は、露光部が、発生した酸
を触媒として溶解阻止剤（基）が分解、アルカリ可溶と
なり、ポジパターンを得る。In a negative acid-generating character width type resist, the exposed area is cross-linked and insolubilized during post-exposure baking (FEB) using the acid generated by the photosensitive acid generator as a catalyst, and a negative pattern is obtained by alkaline development. . On the other hand, in the case of a positive acid-generating chemically amplified resist, the dissolution inhibitor (base) is decomposed in the exposed area using the generated acid as a catalyst and becomes alkali-soluble, thereby obtaining a positive pattern.
ところで、レジストパターンを用いてエツチングする場
合、レジストパターンはできるだけドライエツチング耐
性が高く、耐熱性が高いことが望まれている。そこで、
例えばレジストにＵＶ光を照射しながら、オーブンラン
プ等を用いて加熱を行なう、キユアリングが行なわれて
いる。By the way, when etching is performed using a resist pattern, it is desired that the resist pattern has as high dry etching resistance as possible and high heat resistance. Therefore,
For example, curing is performed by heating the resist using an oven lamp or the like while irradiating the resist with UV light.
また、従来のｇ線（４３６ｎｍ）やｉ線（３６５ｎｍ）
を用いたリソグラフィーにおいては、解像力を高めるた
めに、表面処理法が各種提案されている。これら表面処
理法としては、古くはクロロベンゼンによるソーキング
（表面処理）法から最近ではレジスト表面をアルカリ水
溶液で処理したり（表面アルカリ処理法）、これに更に
色々なプロセスなどを組み合わせることが提案されてい
る。例えば、上記表面アルカリ処理法では、レジストを
塗布した後、露光前にアルカリ水溶液でレジスト膜表面
を処理し、露光現像すると、レジストパターン上部に難
溶化層が形成されるため、レジストパターン上部で必要
以上の溶解が起らず、より矩形に近いパターンを形成で
きることが知られている（「応用物理学講演会１９８９
年秋季予講集２８ｐＬ３Ｊ参照）。また、上記したクロ
ロベンゼンによるソーキング法では、ナフトキノンシア
シト／クレゾールノボラック樹脂で成るポジ型レジスト
の表面をクロロベンゼンで表面処理するものであり、レ
ジストパターン上部に庇形状の突起がわずかに形成され
るものの、パターン形状が改善されることも知られてい
る。In addition, conventional g-line (436nm) and i-line (365nm)
In lithography using lithography, various surface treatment methods have been proposed to improve resolution. These surface treatment methods range from the old soaking (surface treatment) method using chlorobenzene to the more recent treatment of the resist surface with an alkaline aqueous solution (surface alkali treatment method), and combinations of various other processes have been proposed. There is. For example, in the above-mentioned surface alkali treatment method, after coating the resist, the surface of the resist film is treated with an alkaline aqueous solution before exposure, and when exposed and developed, a hardly soluble layer is formed on the top of the resist pattern. It is known that the above dissolution does not occur and a pattern closer to a rectangle can be formed ("Applied Physics Lecture 1989
(See 2016 Fall Preliminary Lecture Collection 28pL3J). In addition, in the soaking method using chlorobenzene described above, the surface of a positive resist made of naphthoquinone siacite/cresol novolac resin is surface-treated with chlorobenzene, and although a slight eave-shaped protrusion is formed on the top of the resist pattern, It is also known that pattern shape is improved.
［発明が解決しようとする課題］
しかしながら、上記した従来例においては、以下に説明
するような問題点を有している。[Problems to be Solved by the Invention] However, the above-described conventional example has the following problems.
（ｉ）上記したように、レジストパターンのドライエツ
チング耐性、耐熱性を向上させるために用いられるオー
ブンランプ等のキュア装置に均一な性能が要求され、そ
のためキュア装置がコスト高となる問題点を有している
。また、このようなキュア方法は、上記した酸発生化学
増幅型レジストに適用した場合にも同様の問題点を有す
ることは言うまでもない。(i) As mentioned above, curing equipment such as oven lamps used to improve dry etching resistance and heat resistance of resist patterns is required to have uniform performance, and as a result, curing equipment has the problem of high cost. are doing. Further, it goes without saying that such a curing method has similar problems when applied to the above-mentioned acid-generating chemically amplified resist.
（１１）また、上記した表面処理方法は、通常のレジス
ト（＋フトキノンジアノド／ノホラック樹脂）において
は有効であるが、酸発生化学増幅型レジストには有効で
はない問題点があった。(11) Furthermore, the above-mentioned surface treatment method is effective for ordinary resists (+futhoquinone dianode/nophorac resin), but has the problem that it is not effective for acid-generating chemically amplified resists.
本発明は、このような従来の問題点に着目して、創案さ
れたものであって、良好なパターン形状を可能とする酸
発生化学増幅型レジストのパターン形成方法を得んとす
るものである。The present invention was devised by paying attention to these conventional problems, and aims to provide a pattern forming method for an acid-generating chemically amplified resist that enables a good pattern shape. .
［課題を解決するための手段］
特許請求の範囲第１項記載の発明は、酸発生化学増幅型
レジストを用いたレジストパターンの形成方法において
、パターン現像処理終了後に酸溶液処理を施すことを、
その解決手段としている。[Means for Solving the Problems] The invention described in claim 1 provides a method for forming a resist pattern using an acid-generating chemically amplified resist, which includes performing an acid solution treatment after pattern development processing is completed.
This is the solution.
特許請求の範囲の第２項記載の発明は、酸発生化学増幅
型レノストを用いたレジストパターンの形成方法におい
て、露光後に水処理を施した後、ベークとパターン現像
を順次施すことを、その解決手段としている。The invention recited in claim 2 provides a method for forming a resist pattern using an acid-generating chemically amplified renost, in which water treatment is performed after exposure, and then baking and pattern development are sequentially performed. It is used as a means.
［作用］
特許請求の範囲第１項証載の発明においては、パターン
現像処理終了後に、更に酸溶液処理を施すことにより、
酸発生化学増幅型レジスト中の架橋を促進させ、パター
ンの耐熱性及びドライエツチング耐性を向上させる。[Function] In the invention as evidenced in claim 1, by further performing acid solution treatment after the pattern development process,
Promotes crosslinking in acid-generating chemically amplified resists and improves pattern heat resistance and dry etching resistance.
特許請求の範囲第２項記載の発明においては、露光後の
水処理により、レジスト表面の酸濃度を減少させる。こ
のため、酸発生化学増幅型レジストがネガ型の場合は、
レジストパターン上部にブリッジ（庇形状の突起）が発
生するのを抑制し、ボン型の場合は、レジスト表面に難
溶化層を形成し、パターンの矩形性に寄与する。In the invention described in claim 2, the acid concentration on the resist surface is reduced by water treatment after exposure. Therefore, if the acid-generating chemically amplified resist is negative,
It suppresses the formation of bridges (eaves-shaped protrusions) on the upper part of the resist pattern, and in the case of a bong type, forms a hardly soluble layer on the resist surface, contributing to the rectangularity of the pattern.
［実施例］
以下、本発明に係るレジストパターンの形成方法の詳細
を各実施例に基づいて説明する。[Examples] Hereinafter, details of the resist pattern forming method according to the present invention will be described based on each example.
後記する第１実施例及び第２実施例は、酸発生化学増幅
型レジストのパターン形成メカニズムに着目し、パター
ン現像の終了後にパターンを再度酸溶液で処理すること
により、ハードニングキュアを行なったものである。The first and second examples described later focus on the pattern formation mechanism of an acid-generating chemically amplified resist, and harden the pattern by treating the pattern with an acid solution again after pattern development. It is.
（第１実施例）
先ず、本実施例は、例えば直径５インチのシリコンウェ
ハを、レジストを塗布する前にデバイトレージョンベー
ク（２００℃、１分間）を施してシリコンウェハ上の水
分を蒸発させた後、ＨＭＤＳ（ヘキサメチルジシラザン
）蒸気で２５°Ｃ１１分間のプライム処理を施す。(First Example) First, in this example, a silicon wafer with a diameter of 5 inches, for example, is subjected to a device radiation bake (200°C, 1 minute) to evaporate moisture on the silicon wafer before applying a resist. After that, prime treatment was performed with HMDS (hexamethyldisilazane) vapor at 25° C. for 11 minutes.
次に、シリコンウェハ上にネガ型の酸発生化学増幅型レ
ジストを回転塗布し、９０℃、１分間のソフトベークを
行なって例えば膜厚０．７μｍのレジスト層を形成した
。Next, a negative acid-generating chemically amplified resist was spin-coated on the silicon wafer, and soft-baked at 90° C. for 1 minute to form a resist layer having a thickness of, for example, 0.7 μm.
なお、本実施例においては、酸発生化学増幅レジストと
して、
クレゾールノボラック樹脂？こ、
般式、
Ｒ２
で表わされるＨＨＭを架橋剤とし、一般式、で表わされ
るＤＤＴを光酸発生剤として含有させたレノスト（シブ
レー社製： ５ＡＬ６０１−ＥＲ−７）を用いた。In this example, cresol novolak resin was used as the acid-generating chemically amplified resist. Renost (manufactured by Sibley, Inc.: 5AL601-ER-7) containing HHM represented by the general formula R2 as a crosslinking agent and DDT represented by the general formula as a photoacid generator was used.
次に、ＫｒＰエキシマレーザステッパ（ＮＡＯ，３７，
Ｏ： ０．５）にて露光を行ない、これを１２０℃、１
分間のプレエツチングベーク（ＦＥＢ）後、アルカリ水
溶液（ＭＦ６２２）で１０分間の現像を行ないパターン
形成を行なう。Next, a KrP excimer laser stepper (NAO, 37,
Exposure was carried out at O: 0.5), and this was carried out at 120°C and 1
After a pre-etching bake (FEB) for 1 minute, development is performed for 10 minutes using an alkaline aqueous solution (MF622) to form a pattern.
さらに、上記パターン現像終了後、Ｉ規定の塩酸に１分
間浸漬させ、水洗後乾燥を行なった。Further, after the pattern development was completed, it was immersed in I-specified hydrochloric acid for 1 minute, washed with water, and then dried.
上記のようにして形成されたレジストパターンをへき関
し、ＳＥＭ観察を随時行ないつつ熱を加えた結果、１５
０℃まで耐熱性を示した。これに対し、上記酸溶液処理
を施さなかった場合、１３５℃でパターン劣化か生じる
ことが判った。As a result of separating the resist pattern formed as described above and applying heat while performing SEM observation from time to time, the result was 15
It showed heat resistance up to 0°C. On the other hand, it was found that when the acid solution treatment was not performed, pattern deterioration occurred at 135°C.
（第２実施例）
本実施例は、酸発生化学増幅型レジストとして、ポリヒ
ドロキシスチレン（ＰＨＳ）のフェノール性水酸基をト
リメチルシリル基で７０％置換しに樹脂と、光酸発生剤
としてのテトラフェニルスルホニウム、ヘキサフロロア
ンチモネートを５重量％加えたものとから成るボッ型レ
ジスト（シプレー社製：ＸＰ８８４３）を用いた。(Second Example) This example uses a resin in which 70% of the phenolic hydroxyl groups of polyhydroxystyrene (PHS) are replaced with trimethylsilyl groups, and tetraphenylsulfonium as a photoacid generator, as an acid-generating chemically amplified resist. , to which 5% by weight of hexafluoroantimonate was added (XP8843, manufactured by Shipley) was used.
本実施例においては、ベーク温度を７０℃（１分間）、
プレエツチングベークを１３０℃（１分間）とし、現像
は、２．１％のＴＭＡＨで１分間行なった。なお、他の
操作は、上記した第１実施例と同様である。In this example, the baking temperature was 70°C (1 minute).
Pre-etching baking was carried out at 130° C. (1 minute), and development was carried out with 2.1% TMAH for 1 minute. Note that other operations are similar to those in the first embodiment described above.
このようにして形成されたレジストパターンをへき関し
て、ＳＥＭ観察を随時行なった結果、１６０℃まで耐熱
性を示すことが判った。なお、酸溶液処理を施さなかっ
た場合は、そのパターンの耐熱性は１５０℃までであっ
た。As a result of SEM observation of the resist pattern thus formed, it was found that it exhibited heat resistance up to 160°C. Note that when the acid solution treatment was not performed, the heat resistance of the pattern was up to 150°C.
以上、第１実施例及び第２実施例について説明したが、
上記両実施例においては、酸溶液処理として、１規定の
塩酸を用いたが、この他に、例えばＰ−）ルエンスルホ
ン酸溶液や、１規定の硫酸水溶液や、酢酸水溶液を用い
ても同様の効果が得られた。The first embodiment and the second embodiment have been described above, but
In both of the above examples, 1N hydrochloric acid was used as the acid solution treatment, but in addition to this, similar results may be obtained using, for example, P-)luenesulfonic acid solution, 1N sulfuric acid aqueous solution, or acetic acid aqueous solution. It worked.
また、上記した鉱酸や有機酸と、レジストを溶かさない
溶媒（キシレンなど）を混合したものを用いて酸溶液処
理を行なってもよい。Alternatively, acid solution treatment may be performed using a mixture of the mineral acid or organic acid described above and a solvent that does not dissolve the resist (such as xylene).
さらに、酸溶液処理を行なう場合、上記したような浸漬
法の他、パドル法、スプレー法等の方法を用いても勿論
よい。Furthermore, when performing the acid solution treatment, other than the above-mentioned dipping method, methods such as the paddle method and the spray method may of course be used.
次に、第３実施例〜第５実施例について説明するが、こ
れら実施例は、露光後の表面処理とじて水処理を施すこ
とにより露光の焦点ズレによるパターン形状の悪化を防
止するようにしたものである。なお、第２図は、第３実
施例の工程の概略を示すブロック図である。Next, the third to fifth embodiments will be described. In these embodiments, deterioration of the pattern shape due to focus shift during exposure was prevented by performing water treatment after surface treatment after exposure. It is something. Note that FIG. 2 is a block diagram schematically showing the steps of the third embodiment.
（第３実施例）
本実施例においては、先ず、２００°Ｃ，１分間のデハ
イドレーンヨンベークをノリコンウェハ（例えば５イン
チ径）に施した後、第１実施例と同様のネガ型の酸発生
化学増幅型レジスト（ＳＡＬ６０１−ＥＲ−７）を回転
塗布して０．７μｍの膜厚に形成し、次に、９０℃秒間
のソフトベークを行なった。次に、これをＫｒＦエキシ
マレーザステッパ（ＮＡ ： ０．３７，６ ： ０．
５）にてライン及スペースを有するクロムマスクを介し
て、露光量とフォーカスを振りながら露光した。次に、
水を用いて１０分間の表面処理を行ない、さらに、１１
０℃、９０秒間のプレエツチングベークを行ない、次い
でアルカリ水溶液（ＭＦ６２２：ンプレー社製）で５分
間の浸漬を行なって現像した。(Third Example) In this example, first, a Noricon wafer (for example, 5 inch diameter) was subjected to a dehydration bake at 200°C for 1 minute, and then a negative type acid was applied as in the first example. A chemically amplified photoresist (SAL601-ER-7) was spin-coated to a thickness of 0.7 μm, and then soft baked at 90° C. for seconds. Next, this was processed using a KrF excimer laser stepper (NA: 0.37, 6: 0.
In step 5), exposure was performed through a chrome mask having lines and spaces while varying the exposure amount and focus. next,
Surface treatment was performed using water for 10 minutes, and
A pre-etching bake was performed at 0° C. for 90 seconds, and then development was performed by immersion in an alkaline aqueous solution (MF622, manufactured by Nprey Co., Ltd.) for 5 minutes.
このようにして形成されたレジストパターンにおいて、
０．３５μｍのライン及スペースの部分の断面形状をＳ
ＥＭ観察すると第３図に示すように、ブリッジ発生のな
い矩形性を有する良好なパターン形状が得られているこ
とが確認された。なお、第４図は、水処理を施さない比
較例を示した断面図である。なお、図中、■はノリコン
ウェハ、２はレジストである。In the resist pattern formed in this way,
The cross-sectional shape of the 0.35 μm line and space part is S
As shown in FIG. 3, EM observation confirmed that a good pattern shape with no bridging and rectangularity was obtained. Note that FIG. 4 is a cross-sectional view showing a comparative example in which water treatment is not performed. In addition, in the figure, ■ is a Noricon wafer, and 2 is a resist.
（第４実施例）
本実施例においては、２００℃、１分間のデバイトレー
ジョンベークをノリコンウェハに施した後、ポリビニル
フェノールのＯＨ基の５０％をトリメチルシリル（ＴＭ
Ｓ）基で保護したものにＰｈ ｓＳ ”Ｓ ｂ Ｆ ｅ
−（トリフェニルスルホニウムへキフルオロアンチモン
）を５重量％加えて固形分３０％のＥＣＡ溶液にしたポ
ジ型レジストを回転塗布し、０．７μｍの膜厚のレジス
ト膜を形成し、その後上記第３実施例膜を形成し、その
後上記第３実施例と同様の操作を行なった。なお、ブレ
ベークは８０℃、１分間、プレエツチングベークは１２
０°Ｃ１１分間行なった。この実施例における感度は１
２０ｍＪ／ｃｍ’であった。(Fourth Example) In this example, after subjecting a Noricon wafer to a Debite formation bake at 200°C for 1 minute, 50% of the OH groups of polyvinylphenol were removed from trimethylsilyl (TM).
Ph sS ”S b Fe
A positive resist made by adding 5% by weight of -(triphenylsulfonium to hekifluoroantimony) to make an ECA solution with a solid content of 30% was spin-coated to form a resist film with a thickness of 0.7 μm, and then the third An example film was formed, and then the same operations as in the third example above were performed. In addition, the brebake is at 80℃ for 1 minute, and the pre-etching bake is at 12℃.
The test was carried out at 0°C for 11 minutes. The sensitivity in this example is 1
It was 20 mJ/cm'.
本実施例により形成されたレジストパターンを第３実施
例と同様０．３５μｍのライン及スペースの部分に着目
してＳＥＭ観察した結果、第５図に示すように矩形性を
有する良好なパターン形状が得られていることが確認さ
れた。なお、レジストパターン上部表面での膜減りは見
られなかった。As a result of SEM observation of the resist pattern formed in this example, focusing on the 0.35 μm line and space portions as in the third example, a good pattern shape with rectangularity was found as shown in FIG. It was confirmed that it was obtained. Note that no film thinning was observed on the upper surface of the resist pattern.
第６図は水処理を施さなかった比較例を示す。FIG. 6 shows a comparative example in which no water treatment was applied.
（第５実施例）
本実施例は、第３実施例と略同様の操作行なった。ただ
し、水処理とプレエツチングベークを別々に行なう代り
に、超音波加湿器により湿度８０％に調節された雰囲気
中で１１０°Ｃ１９０秒間のプレエツチングベークを行
なった。なお、第７図は、ベーク炉３を備えた恒温恒湿
槽４に超音波加湿器５からの水蒸気を導入し得るように
した装置の概略説明図である。(Fifth Example) In this example, substantially the same operation as in the third example was performed. However, instead of performing water treatment and pre-etching baking separately, pre-etching baking was performed at 110° C. for 190 seconds in an atmosphere whose humidity was adjusted to 80% using an ultrasonic humidifier. Note that FIG. 7 is a schematic explanatory diagram of an apparatus capable of introducing water vapor from an ultrasonic humidifier 5 into a constant temperature and humidity bath 4 equipped with a baking oven 3.
以上、各実施例について説明したが、本発明に係るレジ
ストパターンの形成方法は、これに限られるものではな
く、例えば各種の酸発生化学増幅型レジストに適用でき
ると共に、酸溶液処理あるいは水処理を実質的に行なう
ものであればこれら実施例に限られるものではない。Although each embodiment has been described above, the resist pattern forming method according to the present invention is not limited to this, and can be applied to various acid-generating chemically amplified resists, and can also be applied to acid solution treatment or water treatment. The invention is not limited to these embodiments as long as it is carried out substantially.
［発明の効果］
以上の説明から明らかなように、特許請求の範囲第１項
記載の発明によれば、酸溶液処理という単純な操作で、
レジストパターンの耐熱性、耐エツチング特性を高める
ことができる効果がある。[Effect of the invention] As is clear from the above explanation, according to the invention recited in claim 1, the simple operation of acid solution treatment can
This has the effect of increasing the heat resistance and etching resistance of the resist pattern.
特許請求の範囲第２項記載の発明にあっては、露光後に
水による表面処理を施すことにより、ネガ型の酸発生化
学増幅型レジストの場合は、焦点ズレによるレジストパ
ターン表面のブリッジ発生を防止し、ポジ型の酸発生化
学増幅型レジストの場合は、表面の膜減りを防止する効
果がある。このため、良好なレジストパターンの形成を
可能にする効果がある。In the invention described in claim 2, by performing surface treatment with water after exposure, in the case of a negative acid-generating chemically amplified resist, the occurrence of bridging on the resist pattern surface due to focus shift is prevented. However, in the case of a positive acid-generating chemically amplified resist, there is an effect of preventing film thinning on the surface. Therefore, it is possible to form a good resist pattern.
第１図は本発明の第１実施例の工程の概略を示すブロッ
ク図、第２図は同第３実施例の工程の概略を示すブロッ
ク図、第３図は第３実施例の断面図、第４図は比較例の
断面図、第５図は第４実施例の断面図、第６図は比較例
の断面図、第７図は第５実施例に用いた装置の説明図で
ある。
１・・・シリコンウェハ ２・・・レジスト、５・・・
超音波加湿器。
第１突方乞イダ１の工禾ｉの１社を町トとホすツーロッ
ク図第１図
ｖ、３遺【２イヒイグリσワエネｔσワＪたＥｌｌシト
−ｊ＼す７’Ｔゴｉ／り図第２図
第３ 支方」立イタリ／）断面図
］：コ、呻Ｒイ／Ｉ＋ の１１’Ｔ ｌｉ ＩＵ第４図
第４ ′Ｘ、方ｆ巳イタリのＩ！Ｉ’ｌ−ｆｆｉ ＩＩ
Ｐコ第５図
比較イグ１１０迷を面図
第６図FIG. 1 is a block diagram schematically showing the process of the first embodiment of the present invention, FIG. 2 is a block diagram schematically showing the process of the third embodiment, and FIG. 3 is a sectional view of the third embodiment. FIG. 4 is a sectional view of a comparative example, FIG. 5 is a sectional view of a fourth embodiment, FIG. 6 is a sectional view of a comparative example, and FIG. 7 is an explanatory diagram of an apparatus used in the fifth embodiment. 1... Silicon wafer 2... Resist, 5...
Ultrasonic humidifier. One of the factories of the first construction company is located in the town. Fig. 2, Fig. 3, lateral cross-sectional view]: 11'T li IU, IU, Fig. 4, 4'X, direction I! I'l-ffi II
Figure 5 Comparison of Pco Figure 110 side view Figure 6
Claims (2)
ーンの形成方法において、 パターン現像処理終了後に酸溶液処理を施すことを特徴
とするレジストパターンの形成方法。(1) A method for forming a resist pattern using an acid-generating chemically amplified resist, characterized in that an acid solution treatment is performed after pattern development processing is completed.
ーンの形成方法において、 露光後に水処理を施した後、ベークとパターン現像を順
次施すことを特徴とするレジストパターンの形成方法。(2) A method for forming a resist pattern using an acid-generating chemically amplified resist, which comprises sequentially performing a water treatment after exposure, followed by baking and pattern development.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2085359A JP2964533B2 (en) | 1990-03-30 | 1990-03-30 | Method of forming resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2085359A JP2964533B2 (en) | 1990-03-30 | 1990-03-30 | Method of forming resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03282553A true JPH03282553A (en) | 1991-12-12 |
| JP2964533B2 JP2964533B2 (en) | 1999-10-18 |
Family
ID=13856517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2085359A Expired - Fee Related JP2964533B2 (en) | 1990-03-30 | 1990-03-30 | Method of forming resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2964533B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7090963B2 (en) | 2003-06-25 | 2006-08-15 | International Business Machines Corporation | Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging |
| US7300741B2 (en) | 2006-04-25 | 2007-11-27 | International Business Machines Corporation | Advanced chemically amplified resist for sub 30 nm dense feature resolution |
| JP2017021092A (en) * | 2015-07-08 | 2017-01-26 | 信越化学工業株式会社 | Pattern forming method |
-
1990
- 1990-03-30 JP JP2085359A patent/JP2964533B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7090963B2 (en) | 2003-06-25 | 2006-08-15 | International Business Machines Corporation | Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging |
| US7300741B2 (en) | 2006-04-25 | 2007-11-27 | International Business Machines Corporation | Advanced chemically amplified resist for sub 30 nm dense feature resolution |
| JP2017021092A (en) * | 2015-07-08 | 2017-01-26 | 信越化学工業株式会社 | Pattern forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2964533B2 (en) | 1999-10-18 |
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