JPH07288109A - Xenon radiation device and object surface quality improving device using it - Google Patents

Xenon radiation device and object surface quality improving device using it

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Publication number
JPH07288109A
JPH07288109A JP10160894A JP10160894A JPH07288109A JP H07288109 A JPH07288109 A JP H07288109A JP 10160894 A JP10160894 A JP 10160894A JP 10160894 A JP10160894 A JP 10160894A JP H07288109 A JPH07288109 A JP H07288109A
Authority
JP
Japan
Prior art keywords
lamp
xenon
sample
irradiation
window member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10160894A
Other languages
Japanese (ja)
Other versions
JP3211556B2 (en
Inventor
Ryushi Igarashi
龍志 五十嵐
Hiromitsu Matsuno
博光 松野
Tatsumi Hiramoto
立躬 平本
Nobuyoshi Hishinuma
宣是 菱沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
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Abstract

PURPOSE:To obtain an uniform surface light source, closely irradiate a sample, and enable effective sample washing and surface improvement to be carried out easily due to large-sized surface irradiation, by specifying the shape and structure of members of a radiation device and emitting ultraviolet-rays with its main components being Xenon gas. CONSTITUTION:Plural barrier electric discharge lamps 31 in each of which is used a cylindrical container which can easily be fabricated are provided in a cabinet 32 having a flat excimer light outlet window member 34 and are arranged so that the lamps 31 are enveloped by means of an ultraviolet-ray reflection mirror 33, and the cabinet inside is replaced with nitrogen gas via an inlet 37 and an outlet 38. By making such constitution, the surface irradiation in an area of approximately 40X80mm is obtained at an average radiation intensity of 8mw/cm<2> on the surface of a radiation window 32. By making the planar sample close to the radiation window of this device within 3mm, surface improvement and UV/O3 washing can be effectively performed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光化学反応用の紫外線
光源として使用される誘電体バリア放電ランプの改良
と、その改良されたランプを使う物体表面改質装置もし
くは改質方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improved dielectric barrier discharge lamp used as an ultraviolet light source for photochemical reactions, and an object surface modification apparatus or modification method using the improved lamp.

【0002】[0002]

【従来の技術】本発明に関連した技術としては例えば、
日本国公開特許公報平2ー7353号があり、そこに
は、放電容器にエキシマ分子を形成する放電ガスを充填
し、誘電体バリア放電(別名オゾナイザー放電あるいは
無声放電。電気学会発行改訂新版(放電ハンドブック)
平成1年6月再販7刷発行第263ページ参照)によっ
てエキシマ分子を形成せしめ、該エキシマ分子から放射
される光を取り出す放射器、すなわち誘電体バリア放電
ランプについて記載されている。他方、近年、被処理物
をいためないでその表面の有機物除去、不要レジストの
除去、ドライ精密洗浄、金属表面の酸化層形成などをお
こなう方法として紫外光とオゾンの協働作用を利用した
UV/O3 処理が開発され、実用化にいたった。UV/
3 処理については例えば単行本「オゾン利用の新技
術」(三ゆう書房発行、昭和61年11月20日)の第
9章(第301頁から第313頁、(以下文献1とい
う) )に原理、装置、洗浄効果、用途などが詳細に解説
されているが、使用されている光源は低圧水銀灯(放射
波長254nm、185nm)であった。 また、五十
嵐らは第54回応用物理学会学術講演会講演要旨集27
a−HEー2でキセノンガスを封入した波長172nm
に中心放射波長を持つ誘電体バリア放電ランプを使用す
ることによって、プラスチックスの表面改質の所要時間
が低圧水銀灯の1/10以下になると報告している。こ
のように誘電体バリア放電ランプは表面改質、UV/O
3 洗浄に有効ということがわかっている。
2. Description of the Related Art Techniques related to the present invention are, for example,
There is Japanese Laid-Open Patent Publication No. 2-7353, in which a discharge vessel is filled with a discharge gas that forms excimer molecules, and a dielectric barrier discharge (also known as ozonizer discharge or silent discharge. Revised new edition issued by the Institute of Electrical Engineers (discharge) Handbook)
This paper describes a radiator, that is, a dielectric barrier discharge lamp, which forms excimer molecules by taking out the resale 7th printing issue, June 1993, page 263) and takes out light emitted from the excimer molecules. On the other hand, in recent years, as a method of removing organic substances on the surface of the object to be treated, removal of unnecessary resist, precision dry cleaning, formation of an oxide layer on the metal surface, etc. O 3 treatment was developed and put to practical use. UV /
Regarding the O 3 treatment, for example, refer to Chapter 9 (pages 301 to 313, (hereinafter referred to as document 1)) of the book “New Technology of Ozone Utilization” (published by Sanyuu Shobo, November 20, 1986). , Device, cleaning effect, application, etc. are described in detail, but the light source used was a low-pressure mercury lamp (radiation wavelength 254 nm, 185 nm). Igarashi et al., Proceedings of the 54th Annual Meeting of the Applied Physics Society of Japan 27
Wavelength 172 nm with xenon gas sealed with a-HE-2
It has been reported that by using a dielectric barrier discharge lamp having a central emission wavelength, the time required for surface modification of plastics is 1/10 or less that of a low pressure mercury lamp. In this way, the dielectric barrier discharge lamp has surface modification, UV / O
3 It is known to be effective for cleaning.

【0003】ところで、該ランプをUV/O3 処理に使
用する場合、大気を含む酸素雰囲気中で使用する必要が
ある。UV/O3 洗浄は、真空紫外光を試料表面に照射
し、汚れである有機物の結合を断ち切り、酸素に吸収さ
れ、オゾンさらに活性酸素を作り、その強力な酸化力で
有機物を酸化させ、CO2 、NO2 にして蒸発させるか
ら酸素雰囲気が必要である。プラスチックスなどの表面
改質も同様に短波長の紫外光を試料表面に照射し、有機
物の結合を断ち切る必要があり、かつ酸素に照射し、オ
ゾンさらに活性酸素(例えばO( 1D))を作り、有機
物を酸化させ、表面に親水基(OH基、COOH基、C
O基など)を導入させる必要があるからである。波長1
72nmに中心放射波長を持つ誘電体バリア放電ランプ
で上記目的に応用するにはこのエキシマ光取り出し窓部
材と試料表面の間を大気中の場合、3mm以内にする必
要がある。なぜならば、酸素の吸収係数が15cm-1
大きく、3mmで強度が1/2ー1/3、になるので、
3mm、出来れば窓部材と試料表面の間を1mm以内に
すると効果が著しい。
By the way, when the lamp is used for UV / O 3 treatment, it is necessary to use it in an oxygen atmosphere including the atmosphere. UV / O 3 cleaning irradiates the surface of the sample with vacuum ultraviolet light, cuts off the binding of organic substances that are stains, is absorbed by oxygen, creates ozone and active oxygen, and oxidizes the organic substances with its strong oxidizing power. An oxygen atmosphere is necessary because it is vaporized into NO 2 and NO 2 . Similarly, for surface modification of plastics and the like, it is necessary to irradiate the sample surface with ultraviolet light of short wavelength to break the bonds of organic substances, and to irradiate oxygen, ozone and active oxygen (for example, O ( 1 D)) Made, oxidize organic matter, hydrophilic surface (OH group, COOH group, C
This is because it is necessary to introduce an O group). Wavelength 1
For application to the above purpose in a dielectric barrier discharge lamp having a central emission wavelength of 72 nm, the distance between the excimer light extraction window member and the sample surface must be within 3 mm in the atmosphere. Because the absorption coefficient of oxygen is as large as 15 cm -1 and the strength becomes 1 / 2-1 / 3 at 3 mm,
3 mm, and if possible, if the distance between the window member and the sample surface is within 1 mm, the effect is remarkable.

【0004】誘電体バリア放電ランプの形状が、円筒状
では、ランプを試料に近づけても試料に到達する真空紫
外光は試料に最も近いごく一部に限られる。ランプが平
面型であれば試料をランプにちかづけて照射すると一度
に大きな面積が照射出来て有利である。
When the shape of the dielectric barrier discharge lamp is cylindrical, the vacuum ultraviolet light reaching the sample even when the lamp is brought close to the sample is limited to only a part that is the closest to the sample. If the lamp is a flat type, it is advantageous to irradiate the sample with the sample while irradiating a large area at a time.

【0005】平面型の誘電体バリア放電ランプはB.Elia
ssonらの円盤型がApplied PhysicsB ,Vol46,299-303頁
(1988)に記載されている。グラウンド電極を兼ねたス
テンレスの容器と、円板状の合成石英からなるエキシマ
光取り出し窓部材からなっている。しかしながらこのラ
ンプの問題点は2つある。第1点は、端部で電界の集中
が起き易く、安定な放電が難しいという点である。第2
点は、該ランプの電圧は数kv−数10kvの高電圧を
要する。電圧を低く押さえるためには、誘電体の厚さを
出来るだけ薄くしたいが、平面構造の場合、薄くする
と、ランプの内、外の圧力差による応力が大きくなり、
誘電体の強度が不足し、破壊が起こり、大きな形状のラ
ンプの製作が難しい点である。
B.Elia is a flat type dielectric barrier discharge lamp.
The disk type of sson et al. is Applied Physics B, Vol 46, pp.299-303
(1988). It consists of a stainless steel container that also serves as a ground electrode and an excimer light extraction window member made of disk-shaped synthetic quartz. However, there are two problems with this lamp. The first point is that electric field concentration is likely to occur at the edges, making stable discharge difficult. Second
The point is that the voltage of the lamp requires a high voltage of several kv to several tens of kv. In order to keep the voltage low, we want to make the thickness of the dielectric as thin as possible, but in the case of a planar structure, making it thinner increases the stress due to the pressure difference inside and outside the lamp,
This is because the strength of the dielectric is insufficient and destruction occurs, making it difficult to manufacture a large-sized lamp.

【0006】日本国公開特許公報平4ー264349号
では放電ガスを充満し、封止されたUV透過窓を有する
直方体容器の中に円筒誘電体の内面に電極が設けられた
構造物を複数本配置して、電極間で誘電体バリア放電を
発生させ、外部に照射する照射装置が記載されている。
照射窓の厚みは厚く出来るが、容器内を封止する必要が
あり、高電圧部の導入も必要があり、装置が複雑とな
る。他方、2重円筒型などの円筒型のランプは、製作方
法が比較的容易で、長さも比較的容易に変えられるが、
大気中で照射すると試料に近づけても、実質上線光源と
なり、上記用途には使用出来ない。
[0006] Japanese Unexamined Patent Publication No. 4-264349 discloses a plurality of structures in which electrodes are provided on the inner surface of a cylindrical dielectric in a rectangular parallelepiped container filled with a discharge gas and having a sealed UV transmission window. An irradiation device is described, which is arranged to generate a dielectric barrier discharge between electrodes and irradiates it to the outside.
Although the thickness of the irradiation window can be made thick, it is necessary to seal the inside of the container, and it is also necessary to introduce a high voltage part, which complicates the apparatus. On the other hand, a cylindrical lamp such as a double cylindrical lamp is relatively easy to manufacture and its length can be easily changed.
When it is irradiated in the atmosphere, it becomes a linear light source even if it comes close to the sample, and it cannot be used for the above purposes.

【0007】[0007]

【発明が解決しようとする課題】本発明は放射の中心波
長が172nm付近の真空紫外光の照度が大きく、照度
分布がよく、照射面積の大きい平面照射装置を提供する
こと、さらに該照射装置を使用した物体表面処理方法を
提供する事である。
DISCLOSURE OF THE INVENTION The present invention provides a flat irradiation apparatus having a large irradiance of vacuum ultraviolet light having a central wavelength of radiation near 172 nm, a good illuminance distribution, and a large irradiation area. The object of the present invention is to provide a method for surface treatment of an object used.

【0008】[0008]

【問題を解決するための手段】上記本発明の目的は、少
なくとも一部が紫外エキシマ光を取り出す窓部材から構
成された概略円筒状の放電容器に、誘電体バリア放電に
よってエキシマを形成するキセノン、もしくはキセノン
を主成分とする放電用ガスを充した誘電体バリア放電ラ
ンプを、少なくとも一部が偏平な紫外エキシマ光を取り
出す窓部材で前方をおおった匡体内に、ヘリウム、ネオ
ン、クリプトン、アルゴン、キセノン、水素、窒素から
選択された少なくとも一種のガスとともに配置すること
によって達成できる。
An object of the present invention is to provide a substantially cylindrical discharge vessel, at least a part of which is a window member for extracting ultraviolet excimer light, with a xenon for forming an excimer by dielectric barrier discharge. Alternatively, a dielectric barrier discharge lamp filled with a discharge gas containing xenon as a main component, at least a part of which is covered with a window member for extracting flat ultraviolet excimer light, in a casing covered with helium, neon, krypton, argon, It can be achieved by arranging with at least one gas selected from xenon, hydrogen and nitrogen.

【0009】さらに、匡体の内面が反射鏡を兼ねている
か、もしくは、匡体内に反射鏡を配置しているか、もし
くは、放電容器の一部が反射特性を具えているかするか
し、匡体の前方の凸出寸法が、窓部材から2mm以内に
することによって本発明の目的はより一層達成できる。
Further, whether the inner surface of the casing also serves as a reflecting mirror, or whether the reflecting mirror is arranged inside the casing, or whether a part of the discharge container has a reflection characteristic, The object of the present invention can be further achieved by setting the protrusion size in the front of the window within 2 mm from the window member.

【0010】請求項1に記載したキセノン照射装置と、
この装置の前方に配置した処理台と、この処理台を前記
装置の匡体の窓部材に3mm以内の距離に近接せしめる
駆動手段とを含む物体表面改質装置を構成すれば、物体
表面を、紫外エキシマ光とオゾンとの協働作用を利用し
て洗浄することが出来る。
A xenon irradiation device according to claim 1,
By constructing an object surface reforming apparatus including a processing table arranged in front of this apparatus and a driving means for bringing this processing table close to the window member of the housing of the apparatus within a distance of 3 mm, Cleaning can be performed by utilizing the synergistic action of ultraviolet excimer light and ozone.

【0011】[0011]

【作用】UV/O3 洗浄、表面改質は短波超の紫外光を
酸素雰囲気中で試料表面に照射することが有効である。
しかしながら波長172nmの光では酸素に吸収され、
1/2─1/3に減衰するのが約3mmの距離で、円筒
状ランプから試料表面に照射しても、ほとんどの光は届
かない。円筒状ランプであるとランプを試料に3mm以
内にちかづけても、ランプから放射したごく一部の線状
の光しか試料に到達出来ず、線状の光源と等価になって
しまう。波長172nmの紫外光を大気中で、シリコン
ウエハ、液晶表示用のガラスの表面改質、洗浄をおこな
うためには、ランプから放射した光を効率よく試料に到
達させることが出来る平面照射装置が必要である。平面
照射装置はある程度の面積を1度に照射出来き、洗浄の
スピードが向上出来る。しかしながら平面型ランプを製
作しようとすると、電圧を低く設定設計するため、誘電
体の厚さを出来るだけ薄くしたいが、平面構造の場合、
薄くすると、排気時、容器が大きければ大きいほど、誘
電体の強度が不足し、大きな形状のランプを製作出来な
い点などの困難さがある。
[Function] For UV / O 3 cleaning and surface modification, it is effective to irradiate the sample surface with ultraviolet light in the short wavelength range in an oxygen atmosphere.
However, with light of wavelength 172 nm, it is absorbed by oxygen,
Most of the light does not reach even when the sample surface is irradiated with a cylindrical lamp, which attenuates to 1/2 to 1/3 at a distance of about 3 mm. With a cylindrical lamp, even if the lamp is held within 3 mm of the sample, only a small part of the linear light emitted from the lamp can reach the sample, which is equivalent to a linear light source. In order to perform surface modification and cleaning of silicon wafers and liquid crystal display glass in the atmosphere with ultraviolet light having a wavelength of 172 nm, it is necessary to have a flat irradiation device that can efficiently allow the light emitted from the lamp to reach the sample. Is. The flat irradiation device can irradiate a certain area at a time, and the cleaning speed can be improved. However, when trying to manufacture a flat lamp, the voltage is designed to be set low, so we want to make the thickness of the dielectric as thin as possible, but in the case of a flat structure,
If the container is made thin, the larger the container is, the smaller the strength of the dielectric is when it is evacuated, and it is difficult to manufacture a large lamp.

【0012】上記問題はもちろん従来のアーク放電ラン
プにはないキセノンガスもしくはそれを主成分とした誘
電体バリア放電ランプ固有の問題である。たとえば、波
長185nmと波長254nmの紫外光を用いてUV/
3 洗浄する低圧紫外線ランプにおいて面照射をする場
合でも、複数の直管型ランプ、またはU字管、およびミ
ラーの組み合わせで達成出来る。空気中の酸素に波長1
85nmは吸収されるが、1/2ー1/3に減少する距
離が60mm以上あり、1/10まで減衰するには15
0mm以上である。処理時、上記距離より試料表面にラ
ンプを容易に近づけられるので、ランプと試料を同一の
酸素を含む空間で処理出来き、平面状ランプに構成する
必要はない。もちろん、波長172nmより短波長を放
射するランプであればキセノンガスを主成分とした誘電
体バリア放電ランプと同じ問題を生じるが、現在、UV
/O3 洗浄に使用出来る波長172nmより短波長の紫
外光を放射する高出力ランプが存在せず、まさにキセノ
ンガスもしくはそれを主成分とした誘電体バリア放電ラ
ンプ固有の問題である。
The above problem is, of course, a problem peculiar to xenon gas or a dielectric barrier discharge lamp containing it as a main component, which is not found in conventional arc discharge lamps. For example, using UV light of wavelength 185 nm and wavelength 254 nm, UV /
Even in the case of surface irradiation in a low-pressure ultraviolet lamp for cleaning with O 3, it can be achieved by a combination of a plurality of straight tube type lamps or a U-shaped tube and a mirror. Wavelength 1 for oxygen in the air
85 nm is absorbed, but the distance that decreases to 1 / 2-1 / 3 is 60 mm or more, and it takes 15 to attenuate to 1/10.
It is 0 mm or more. During processing, the lamp can be easily brought closer to the sample surface than the above distance, so that the lamp and the sample can be processed in the same space containing oxygen, and there is no need to form a flat lamp. Of course, a lamp emitting a wavelength shorter than 172 nm causes the same problem as a dielectric barrier discharge lamp containing xenon gas as a main component.
There is no high-power lamp that emits ultraviolet light having a wavelength shorter than 172 nm that can be used for / O 3 cleaning, and this is a problem peculiar to xenon gas or a dielectric barrier discharge lamp containing it as a main component.

【0013】われわれは、製作が容易で、照射面積が大
きく、照度の高い平面照射装置を検討した。鋭意検討の
結果以下の装置を発明した。ランプは製作の困難な平面
状ランプは使用せず、比較的製作の容易な円筒型ランプ
を使用する。波長172nmの紫外光も、窒素、ヘリウ
ム、アルゴン、ネオン、クリプトン、キセノンガスで
は、吸収がなく、紫外光はある立体角をもって放射する
ためランプからの距離に応じて、減少してゆく。この性
質と反射ミラーの反射率と形状、ランプ本数、間隔、エ
キシマ光取り出し窓部材までの距離を考慮して設計する
と、照射装置のエキシマ光取り出し窓部材表面で、均一
な面光源が作られることがわかった。さらに照射装置の
エキシマ光取り出し窓部材の外側を酸素を含む雰囲気に
し、照射装置窓部材面に試料を近接させ配置(3mm以
内、1mm以下が望ましい)することにより、試料表面
での均一な照度分布の面照射が達成出来る。UV/O3
洗浄、プラスチックスの表面改質には、照度分布の均一
度が+−10%程度が必要である。上記方法で上記均一
度のある面積が得られる。その場合、少なくとも、上記
領域の面積はランプの外径×発光長以上であることが望
ましい。上記領域でスピードの高い、表面改質、洗浄な
どが出来る。
We have investigated a flat irradiation device which is easy to manufacture, has a large irradiation area, and has high illuminance. As a result of earnest study, the following device was invented. The lamp does not use a flat lamp which is difficult to manufacture, but uses a cylindrical lamp which is relatively easy to manufacture. The ultraviolet light having a wavelength of 172 nm is not absorbed by nitrogen, helium, argon, neon, krypton, and xenon gas, and the ultraviolet light is emitted with a certain solid angle, and therefore decreases according to the distance from the lamp. If this property, the reflectivity and shape of the reflection mirror, the number of lamps, the interval, and the distance to the excimer light extraction window member are taken into consideration, a uniform surface light source can be created on the surface of the excimer light extraction window member of the irradiation device. I understood. Further, the outside of the excimer light extraction window member of the irradiation device is set to an atmosphere containing oxygen, and the sample is placed close to the irradiation device window member surface (within 3 mm, preferably 1 mm or less) to obtain a uniform illuminance distribution on the sample surface. Surface irradiation can be achieved. UV / O 3
Uniformity of the illuminance distribution needs to be about + -10% for cleaning and surface modification of plastics. With the above method, an area having the above uniformity can be obtained. In that case, it is desirable that at least the area of the above region is equal to or more than the outer diameter of the lamp × the light emission length. High-speed surface modification and cleaning can be performed in the above area.

【0014】低圧水銀灯の場合でも、試料、ランプ間に
ガラスを配置することもあるが、これはランプからのほ
こりなどを防ぐためなどで今回の発明とは根本的に異な
る。今回の目的は酸素の吸収係数が非常に高い波長のラ
ンプで試料に大面積で照射するという問題であり、従来
のアーク放電ランプではこのような問題は存在せずまさ
にキセノンガスもしくはそれを主成分とした誘電体バリ
ア放電ランプだけの問題である。日本国公開特許公報平
5ー174793号では誘電体バリア放電ランプを容器
に入れ、雰囲気を水などの冷却体を流し、ランプを冷却
し、照射窓から光を取り出す方法を提案しているが、今
回は雰囲気ガスは冷却が目的ではない点、キセノンおよ
びその混合ガスを放電ガスに使用したランプ(真空紫外
短波長中心放射波長約172nm)と限定されている
点、面照射装置を製作することが目的という点など、ま
ったく異なる発明である。試料照射の際、3mm以内、
最も望ましくは1mm以内で照射させるため、水平、搬
送機構で試料が運ばれるためには、照射装置のエキシマ
光取り出し窓部材より、匡体の窓枠の凸出が2mm以
内、望ましくはまったく突出していないほうがよい。こ
の場合は被処理物を加熱しながら洗浄、改質することも
出来る。または被処理物の面積が照射装置のエキシマ光
取り出し窓部材の面積より小さく、その窓まで水平に試
料が搬送され、垂直に上げられ、その窓より3mm以内
で照射する照射方法は洗浄、表面改質に著しい、効果を
もたらした。
Even in the case of a low-pressure mercury lamp, glass may be arranged between the sample and the lamp, but this is fundamentally different from the present invention in order to prevent dust from the lamp. The purpose of this time is to irradiate a large area on a sample with a lamp having a very high absorption coefficient of oxygen, and such problems do not exist in conventional arc discharge lamps. It is only a problem of the dielectric barrier discharge lamp. Japanese Unexamined Patent Publication No. 5-174793 proposes a method of putting a dielectric barrier discharge lamp in a container, flowing a cooling body such as water in an atmosphere, cooling the lamp, and taking out light from an irradiation window. This time, the atmosphere gas is not intended for cooling, it is limited to a lamp (vacuum ultraviolet short wavelength center emission wavelength of about 172 nm) that uses xenon and its mixed gas as a discharge gas, and a surface irradiation device can be manufactured. It is a completely different invention in terms of purpose. When irradiating the sample, within 3 mm,
It is most desirable to irradiate within 1 mm, so that in order to carry the sample horizontally and by the transport mechanism, the projection of the window frame of the enclosure should be within 2 mm, preferably at all, protruding from the excimer light extraction window member of the irradiation device. It is better not to. In this case, the object to be treated can be cleaned and modified while heating. Alternatively, the area of the object to be processed is smaller than the area of the excimer light extraction window member of the irradiation device, the sample is conveyed horizontally to the window, is raised vertically, and irradiation is performed within 3 mm from the window. It has a remarkable effect on the quality.

【0015】[0015]

【実施例】本発明の第1の実施例である誘電体バリア放
電ランプを内蔵したキセノン照射装置を図1に示した。
図2にはそのランプの概略図を示した。図2において、
放電容器1は全長約150mmの合成石英製で、外径約
14mmの肉厚1mmの内側管2、内径約24mm肉厚
1mmの外側管3を同軸に配置して中空円筒状の放電空
間7を形成した構造である。外側管3は誘電体バリア放
電の誘電体バリアと光取り出し窓部材を兼用しており、
光がよく通過できるメッシュ電極4が設けられている。
内側管2の外面には光の反射板と誘電体バリア放電の電
極を兼ねたアルミニウム薄膜電極5が設けられている。
放電容器の放電空間7に放電ガスとして250トールのキ
セノンガスを封入した。また、ゲッター室8にはゲッタ
ー6が設けられている。ランプ1の内側空所9には、必
要に応じて冷却流体例えば冷却窒素ガスが流せるように
なっている。ここで電源10によって、該誘電体バリア
放電ランプを入力20ワットで点灯した。その結果、波
長172nmに最大放射値を有する紫外光が効率よく放
射された。
EXAMPLE FIG. 1 shows a xenon irradiation apparatus having a built-in dielectric barrier discharge lamp according to the first example of the present invention.
FIG. 2 shows a schematic view of the lamp. In FIG.
The discharge vessel 1 is made of synthetic quartz having a total length of about 150 mm, and an inner tube 2 having an outer diameter of about 14 mm and a wall thickness of 1 mm and an outer tube 3 having an inner diameter of about 24 mm and a wall thickness of 1 mm are coaxially arranged to form a hollow cylindrical discharge space 7. It is the formed structure. The outer tube 3 also serves as a dielectric barrier for dielectric barrier discharge and a light extraction window member,
A mesh electrode 4 that allows light to pass therethrough is provided.
On the outer surface of the inner tube 2 is provided an aluminum thin film electrode 5 which also serves as a light reflector and an electrode for dielectric barrier discharge.
The discharge space 7 of the discharge container was filled with 250 torr of xenon gas as a discharge gas. A getter 6 is provided in the getter chamber 8. A cooling fluid, for example, cooling nitrogen gas, can flow into the inner space 9 of the lamp 1 as required. Here, the dielectric barrier discharge lamp was turned on by the power supply 10 at an input of 20 watts. As a result, the ultraviolet light having the maximum emission value at the wavelength of 172 nm was efficiently emitted.

【0016】図1において、上記した該誘電体バリヤ放
電ランプ31は、合成石英製平面照射窓すなわちエキシ
マ光取り出し窓部材34を有する匡体32の中に取り付
けられている。35は、合成石英製平面照射窓34の押
さえ用フランジもしくは窓枠である。フランジもしくは
窓枠の厚さtが、窓の外面よりも匡体が凸出している凸
出寸法となる。33は、ランプ31を取り囲むように配
置された紫外光反射ミラーである。36は昇圧トランス
である。37が、匡体内の空気を置換するための窒素ガ
スの入口、38がその出口である。匡体内を窒素置換す
ること、ランプ、ミラーを組合わせることによって、照
射窓32の表面において、平均8mW/cm2 の照射強
度で照度分布+−10%の領域が約40×80mmの広
さの面照射装置が得られた。
In FIG. 1, the above-mentioned dielectric barrier discharge lamp 31 is mounted in an enclosure 32 having a synthetic quartz flat irradiation window, that is, an excimer light extraction window member 34. Reference numeral 35 is a pressing flange or window frame of the synthetic quartz flat irradiation window 34. The thickness t of the flange or the window frame is the protrusion dimension in which the casing protrudes from the outer surface of the window. Reference numeral 33 is an ultraviolet light reflection mirror arranged so as to surround the lamp 31. Reference numeral 36 is a step-up transformer. 37 is an inlet of nitrogen gas for replacing the air in the casing, and 38 is its outlet. By replacing the inside of the enclosure with nitrogen and combining a lamp and a mirror, the area of the illuminance distribution + -10% with an irradiation intensity of 8 mW / cm 2 on average at the surface of the irradiation window 32 has an area of about 40 × 80 mm. A surface irradiation device was obtained.

【0017】本発明の第2の実施例である誘電体バリア
放電ランプを内蔵したキセノン照射装置を図3に示し
た。全長330mmの誘電体バリヤ放電ランプ31と反
射ミラー33の組みが、300mm×300mmの面積
を有する合成石英製平面照射窓34を有する匡体32の
中に4組み、取り付けられている。ランプ1の内側空所
9は水冷を施されている。匡体内は窒素で置換されてい
る。ランプ、ミラーを組合わせることによって、照射窓
34の表面において、平均30mW/cm2 の強度で照
度分布+−10%の領域面積が約250mm×250m
mの広さの面照射装置が得られた。
FIG. 3 shows a xenon irradiation apparatus having a built-in dielectric barrier discharge lamp according to the second embodiment of the present invention. Four sets of a dielectric barrier discharge lamp 31 and a reflection mirror 33 having a total length of 330 mm are mounted in an enclosure 32 having a synthetic quartz flat irradiation window 34 having an area of 300 mm × 300 mm. The inner space 9 of the lamp 1 is water-cooled. The inside of the housing is replaced with nitrogen. By combining the lamp and the mirror, the area of the illuminance distribution + -10% with an average intensity of 30 mW / cm 2 is about 250 mm × 250 m on the surface of the irradiation window 34.
A surface irradiation device having an area of m was obtained.

【0018】本発明の第3の実施例である誘電体バリア
放電ランプを内蔵したキセノン照射装置を図4に示し
た。ランプ31、ミラー33などは第2の実施例と同じ
で、エキシマ光取り出し窓部材34および窓枠35はや
や異なっている。すなわち、照射装置の外側において、
窓部材34と窓枠が同一平面を形成するようにテーパ処
理を施して組み立てられている。この場合、凸出寸法は
零である。フランジもしくは窓枠は、匡体と一体物とし
て設計するか別体物として設計するかはどちらでも良
い。平面状試料40は照射窓34との隙間1mmで搬送
ローラー41により搬送され、その表面が照射されてい
る。照射装置と試料とを近づけることが出来るので、表
面改質、UV/O3 洗浄で非常に効果の大きい照射シス
テムが提供出来た。
FIG. 4 shows a xenon irradiation apparatus having a built-in dielectric barrier discharge lamp according to the third embodiment of the present invention. The lamp 31, the mirror 33, etc. are the same as in the second embodiment, but the excimer light extraction window member 34 and the window frame 35 are slightly different. That is, on the outside of the irradiation device,
The window member 34 and the window frame are tapered and assembled so as to form the same plane. In this case, the protrusion size is zero. The flange or the window frame may be designed as one body with the housing or as a separate body. The flat sample 40 is transported by the transport roller 41 with a gap of 1 mm from the irradiation window 34, and the surface thereof is irradiated. Since the irradiation device and the sample can be brought close to each other, it is possible to provide an irradiation system that is very effective in surface modification and UV / O 3 cleaning.

【0019】本発明の第4の実施例である誘電体バリア
放電ランプを内蔵したキセノン照射装置を図5に示し
た。照射装置は第2の実施例と同じである。窓枠35は
2mm以上窓の外面より突出しているが、平面状試料4
0は照射装置下面まで処理台43とともに水平に移動
後、その位置で上下搬送用治具42により、窓の外面ま
で3mm以内に搬送される。これにより水平搬送時の高
さ精度がそれほど必要なくなり照射時は照射装置に近づ
けられるので、表面改質、UV/O3 洗浄で非常に効果
の大きい照射システムが提供出来た。
A xenon irradiation apparatus incorporating a dielectric barrier discharge lamp according to a fourth embodiment of the present invention is shown in FIG. The irradiation device is the same as in the second embodiment. Although the window frame 35 is projected from the outer surface of the window by 2 mm or more, the flat sample 4
0 moves horizontally to the lower surface of the irradiation device together with the processing table 43, and is then transferred to the outer surface of the window within 3 mm by the vertical transfer jig 42 at that position. This makes it possible to provide an irradiation system that is extremely effective in surface modification and UV / O 3 cleaning, because the height accuracy during horizontal conveyance is not so much required and the irradiation device can be brought closer to it during irradiation.

【0020】本発明の第5の実施例は石英ガラス板のU
V/O3 洗浄である。ガラス板の寸法は250mm×2
50mm×1mmである。照射装置は第3の実施例の装
置を使用した。ガラス板は搬送治具で照射装置の下面に
搬送され、窓の外面との距離1mmで照射された。ガラ
ス板の表面はあらかじめ、イソプロピルアルコール(以
下IPA)中で5分間超音波洗浄し、水にたいする接触
角が25度である試料を用いた。照射時間12秒で接触
角は、石英ガラス板の全域で3度以下になることを確認
した。なお同じ試料を450Wの低圧水銀灯(波長25
4nmの強度70mW/cm2 、波長185nmの強度
が14mW/cm2 )で距離5cmで照射した時、約1
80秒で3度まで変化し、本発明が非常にすぐれている
ことが理解される。
The fifth embodiment of the present invention is U of quartz glass plate.
V / O 3 cleaning. The size of the glass plate is 250 mm x 2
It is 50 mm × 1 mm. The irradiation device used was the device of the third embodiment. The glass plate was transferred to the lower surface of the irradiation device by a transfer jig and irradiated at a distance of 1 mm from the outer surface of the window. The surface of the glass plate was ultrasonically cleaned in isopropyl alcohol (hereinafter, IPA) for 5 minutes in advance, and a sample having a contact angle with water of 25 degrees was used. It was confirmed that when the irradiation time was 12 seconds, the contact angle was 3 degrees or less over the entire area of the quartz glass plate. The same sample was used for a 450 W low-pressure mercury lamp (wavelength 25
Strength of 4nm 70mW / cm 2, when the intensity of the wavelength 185nm is irradiated at a distance 5cm at 14mW / cm 2), about 1
It can be seen that the invention is very good, varying up to 3 degrees in 80 seconds.

【0021】本発明の第6の実施例はシリコンウエハの
UV/O3 洗浄である。照射装置と処理台と駆動システ
ムは第4の実施例と同じである。シリコンウエハは、処
理台43に真空チャックで固定され、上下搬送治具42
で窓の外面との距離1mmまで近づける。照射前の水の
接触角20度のウエハが、照射15秒でその全域が5度
以下となった。
The sixth embodiment of the present invention is UV / O 3 cleaning of a silicon wafer. The irradiation device, the processing table and the driving system are the same as those in the fourth embodiment. The silicon wafer is fixed to the processing table 43 with a vacuum chuck, and the vertical transfer jig 42 is used.
So that the distance from the outside surface of the window is close to 1 mm. A wafer having a contact angle of water of 20 degrees before irradiation had an area of 5 degrees or less in 15 seconds after irradiation.

【0022】本発明の第7の実施例はポリエチルテレフ
タレートの表面改質である。試料の寸法は250×25
0mm×0.3mmである。処理システムは第3の実施
例と同じである。照射前は水に対する接触角が80度の
試料が、照射時間2秒でその全域が接触角40まで変化
した。ESCAで表面を観察すると、OがO/Cで0.
35から0.65に変化した。表面にCOOH、OH基
などの親水基が導入され、表面が改質されたことが理解
できる。
The seventh embodiment of the present invention is the surface modification of polyethyl terephthalate. Sample size is 250 × 25
It is 0 mm × 0.3 mm. The processing system is the same as in the third embodiment. Before irradiation, the sample having a contact angle with water of 80 degrees changed to a contact angle of 40 over the entire area in an irradiation time of 2 seconds. When the surface is observed by ESCA, O is O / C and 0.
It changed from 35 to 0.65. It can be understood that the surface was modified by introducing hydrophilic groups such as COOH and OH groups into the surface.

【0023】[0023]

【発明の効果】本発明は以上の実施例の説明からも理解
出来るように、キセノンもしくはそれを主成分とする放
電ガスを有する誘電体バリア放電ランプを利用する照射
装置において、従来では実現が困難であった大型面照射
装置を比較的容易に提供出来、効果的な洗浄、表面改質
処理技術を提供出来る。
As can be understood from the above description of the embodiments, the present invention is difficult to realize in an irradiation apparatus using a dielectric barrier discharge lamp having a discharge gas containing xenon or a main component thereof. It is possible to provide a large surface irradiation device, which was previously described, relatively easily, and to provide effective cleaning and surface modification treatment technology.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例の説明図であって、(イ)は装
置を、ランプの長手方向を横から描いており、(ロ)は
ランプの長手方向から描いている。
FIG. 1 is an explanatory view of an embodiment of the present invention, in which (a) shows the device in the longitudinal direction of the lamp from the side, and (b) shows it in the longitudinal direction of the lamp.

【図2】本発明に使用する2重円筒型誘電体バリア放電
ランプの一例の説明図である。
FIG. 2 is an explanatory view of an example of a double cylinder type dielectric barrier discharge lamp used in the present invention.

【図3】本発明の他の実施例の説明図である。FIG. 3 is an explanatory diagram of another embodiment of the present invention.

【図4】本発明の他の実施例の説明図である。FIG. 4 is an explanatory diagram of another embodiment of the present invention.

【図5】本発明の他の実施例の説明図である。FIG. 5 is an explanatory diagram of another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 放電容器 2 内側管 3 外側管 4 メッシュ電極 6 ゲッター 7 放電空間 8 ゲッター室 31 誘電体バリア放電ランプ 32 匡体 33 ミラー 34 窓部材 35 窓枠もしくはフランジ 37 窒素ガス入口 38 窒素ガス出口 40 試料 41 搬送用ローラー 42 上下搬送用治具 1 Discharge container 2 Inner tube 3 Outer tube 4 Mesh electrode 6 Getter 7 Discharge space 8 Getter chamber 31 Dielectric barrier discharge lamp 32 Enclosure 33 Mirror 34 Window member 35 Window frame or flange 37 Nitrogen gas inlet 38 Nitrogen gas outlet 40 Sample 41 Transport roller 42 Vertical transport jig

───────────────────────────────────────────────────── フロントページの続き (72)発明者 菱沼 宣是 兵庫県姫路市別所町佐土1194番地 ウシオ 電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nozomi Hishinuma 1194 Sado, Bessho Town, Himeji City, Hyogo Prefecture Ushio Electric Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも一部が紫外エキシマ光を取り
出す窓部材から構成された概略円筒状の放電容器に、誘
電体バリア放電によってエキシマを形成するキセノン、
もしくはキセノンを主成分とする放電用ガスを充した誘
電体バリア放電ランプを、 少なくとも一部が偏平な紫外エキシマ光を取り出す窓部
材で前方をおおった匡体内に、ヘリウム、ネオン、クリ
プトン、アルゴン、キセノン、水素、窒素から選択され
た少なくとも一種のガスとともに配置してなることを特
徴とするキセノン照射装置。
1. A xenon forming excimer by dielectric barrier discharge in a substantially cylindrical discharge vessel at least a part of which comprises a window member for extracting ultraviolet excimer light,
Alternatively, a dielectric barrier discharge lamp filled with a discharge gas containing xenon as a main component is filled with helium, neon, krypton, argon, in a casing covered with a window member for extracting at least a flat ultraviolet excimer light. A xenon irradiation apparatus, which is arranged with at least one gas selected from xenon, hydrogen, and nitrogen.
【請求項2】 匡体の内面が反射鏡を兼ねているか、も
しくは、匡体内に反射鏡を配置しているか、もしくは、
放電容器の一部が反射特性を具えているかすることを特
徴とする請求項1に記載のキセノン照射装置。
2. The inner surface of the housing also serves as a reflecting mirror, or the reflecting mirror is arranged inside the housing, or
The xenon irradiation device according to claim 1, wherein a part of the discharge vessel has a reflection characteristic.
【請求項3】 匡体の前方の凸出寸法が、窓部材から2
mm以内であることを特徴とする請求項1に記載のキセ
ノン照射装置。
3. The front projection of the housing has a size of 2 mm from the window member.
It is within mm, The xenon irradiation apparatus of Claim 1 characterized by the above-mentioned.
【請求項4】 請求項1に記載したキセノン照射装置
と、この装置の前方に配置した処理台と、この処理台を
前記装置の匡体の窓部材に3mm以内の距離に近接せし
める駆動手段とを含むことを特徴とする物体表面改質装
置。
4. The xenon irradiation apparatus according to claim 1, a processing table arranged in front of the apparatus, and driving means for bringing the processing table close to a window member of an enclosure of the apparatus within a distance of 3 mm. An object surface modification device comprising:
【請求項5】 請求項4に記載された物体表面改質装置
を用いて、物体表面を、紫外エキシマ光とオゾンとの協
働作用を利用して洗浄することを特徴とする物体表面洗
浄方法。
5. A method for cleaning an object surface, which comprises using the apparatus for modifying an object surface according to claim 4 to clean an object surface by utilizing a cooperative action of ultraviolet excimer light and ozone. .
JP10160894A 1994-04-15 1994-04-15 Xenon irradiation device and object surface modification device using it Expired - Lifetime JP3211556B2 (en)

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Application Number Priority Date Filing Date Title
JP10160894A JP3211556B2 (en) 1994-04-15 1994-04-15 Xenon irradiation device and object surface modification device using it

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JP2000240002A Division JP3468215B2 (en) 2000-08-08 2000-08-08 Processing equipment using a dielectric barrier discharge lamp

Publications (2)

Publication Number Publication Date
JPH07288109A true JPH07288109A (en) 1995-10-31
JP3211556B2 JP3211556B2 (en) 2001-09-25

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312257A (en) * 1996-03-18 1997-12-02 Fujitsu Ltd Fine processing method and device
US6468599B1 (en) 1998-12-25 2002-10-22 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation
US6796664B2 (en) 2002-03-12 2004-09-28 Carl Zeiss Smt Ag Method and device for decontaminating optical surfaces
JP2004275330A (en) * 2003-03-14 2004-10-07 Iwasaki Electric Co Ltd Active oxygen sterilizer
KR101068127B1 (en) * 2004-06-26 2011-09-28 엘지디스플레이 주식회사 Cleanning device using eximer ultraviolet lay

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312257A (en) * 1996-03-18 1997-12-02 Fujitsu Ltd Fine processing method and device
US6468599B1 (en) 1998-12-25 2002-10-22 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation
US6756087B2 (en) 1998-12-25 2004-06-29 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation and apparatus therefor
US6796664B2 (en) 2002-03-12 2004-09-28 Carl Zeiss Smt Ag Method and device for decontaminating optical surfaces
JP2004275330A (en) * 2003-03-14 2004-10-07 Iwasaki Electric Co Ltd Active oxygen sterilizer
KR101068127B1 (en) * 2004-06-26 2011-09-28 엘지디스플레이 주식회사 Cleanning device using eximer ultraviolet lay

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