JP2004031634A - Hydrophobization treatment equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide hydrophobization treatment equipment wherein optimum gas atmosphere can be selected easily corresponding to combination of a substrate to be treated and photoresist to be used, and the gas atmosphere having optimum component and concentration can be supplied. <P>SOLUTION: Supply flow rate of first liquid is controlled by an electro-pneumatic valve 71, and supply flow rate of second liquid is controlled by an electro-pneumatic valve 72. The first and the second liquid which are supplied are vaporized via an orifice plate 80 by using carrier gas, vaporized gas atmosphere is supplied in a chamber 50, and a wafer W is exposed. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a hydrophobizing apparatus for performing a hydrophobizing process by exposing a substrate to be processed, such as a semiconductor wafer or an LCD substrate, to a gaseous atmosphere.
[0002]
[Prior art]
For example, in a semiconductor device manufacturing process, a predetermined film is formed on a semiconductor wafer (hereinafter, referred to as “wafer”) as a substrate to be processed, and then a photoresist solution is applied to form a resist film, and a circuit pattern is formed. A circuit pattern is formed by a so-called photolithography technique in which a resist film is exposed to light and developed.
[0003]
In order to perform a series of steps in the photolithography technology, a resist coating / developing system is used. Such a resist coating and developing system is provided with a processing station, a cassette station, and an interface unit.
The processing station has a configuration in which various processing units for performing various processing for coating and developing on a wafer are arranged in multiple stages.
The cassette station has a configuration in which a cassette for storing a plurality of wafers is placed, wafers are loaded one by one into the processing station, and processed wafers are unloaded from the processing station and stored in the cassette.
Further, the interface unit has a configuration for transferring a wafer to and from an exposure apparatus provided adjacent to the system. The exposure apparatus is an apparatus that exposes a resist film into a predetermined pattern.
[0004]
In such a resist coating / developing processing system, wafers are taken out one by one from a cassette mounted on a cassette station, transported to a processing station, and first subjected to a hydrophobic treatment by an adhesion unit. . After being cooled by the cooling unit, a photoresist film is applied by a resist coating unit, and a pre-baking process is performed by a hot plate unit (heating processing unit).
[0005]
Thereafter, the wafer is transferred from the processing station to the exposure apparatus via the interface unit, and the exposure apparatus exposes the resist film to a predetermined pattern. The exposed wafer is transported again to the processing station via the interface unit, and the exposed wafer is first subjected to post-exposure bake processing by a hot plate unit. Then, it cools, and a developing solution is apply | coated in a developing process unit, and an exposure pattern is developed. After this development, a post-baking process is performed in a hot plate unit, and the system is cooled to complete a series of processes. After a series of processes is completed, the wafer is transferred to a cassette station and stored in a wafer cassette.
[0006]
Among such a series of processes, the adhesion (hydrophobization) process is a process in which the surface of a hydrophilic wafer is made hydrophobic by supplying, for example, HMDS (hexamethyldisilazane) vapor to a wafer horizontally disposed in the chamber. Specifically, it is a treatment for chemically separating OH group bonds under the oxide film substrate and removing water. This hydrophobic treatment is performed for the purpose of increasing the adhesion between the wafer and the photoresist.
[0007]
In this process, conventionally, a liquid HMDS placed in a closed tank is spontaneously vaporized and the gas atmosphere is changed to, for example, N 2 ₂ This has been done by pumping with a gas and supplying it into a chamber containing a wafer.
[0008]
[Problems to be solved by the invention]
By the way, even when the wafer is exposed to the gaseous atmosphere of HMDS (hexamethyldisilazane), the adhesion between the wafer and the photoresist film is weak, and good adhesion cannot be obtained depending on the combination of the wafer and the photoresist. There was a technical problem. As described above, when the surface treatment of the wafer in the adhesion (hydrophobicization) treatment is not sufficient and good adhesion is not obtained, there is a possibility that pattern peeling or the like may occur.
[0009]
In addition, when the combination of the wafer and the photoresist is changed and an optimal gaseous atmosphere is supplied to the wafer and the photoresist, the liquid (chemical solution) in the tank needs to be replaced in the conventional hydrophobizing apparatus. And the working efficiency was extremely poor. On the other hand, even when the gas atmosphere is not optimal, a certain degree of adhesion can be obtained by lengthening the time of the adhesion (hydrophobic) treatment. However, there is a technical problem that processing time is long and efficient work cannot be expected.
[0010]
The present invention has been made in order to solve such a technical problem, corresponding to the combination of a substrate to be processed such as a wafer and a photoresist to be used, an optimal gas atmosphere can be easily selected, It is another object of the present invention to provide a hydrophobizing apparatus capable of supplying a gas atmosphere having optimal components and concentrations.
[0011]
[Means for Solving the Problems]
A hydrophobizing apparatus according to the present invention, which has been made to achieve the above-described object, is a hydrophobizing apparatus for performing a hydrophobizing process by exposing a substrate to be processed to a gaseous atmosphere. A first liquid supply line for supplying a first liquid for forming the gaseous atmosphere; a second liquid supply line for supplying a second liquid for forming the gaseous atmosphere; A first liquid flow control unit that controls a supply flow rate of the first liquid, a second liquid flow control unit that controls a supply flow rate of the second liquid, and a second liquid flow control unit that is supplied from the first liquid supply line. A vaporizer for vaporizing the first liquid or / and the second liquid supplied from the second liquid supply line, and a carrier gas line for supplying a carrier gas for transporting the gas vaporized by the vaporizer It is characterized in that the gas vaporized by the vaporizing part is conveyed by the carrier gas and a gas supply line for supplying into said chamber.
[0012]
As described above, since the first liquid flow rate control unit and the second liquid flow rate control unit can control the flow rates of the first liquid and the second liquid, the gas atmosphere using only the first liquid, or A gas atmosphere composed of only the second liquid and a mixed gas atmosphere composed of the first liquid and the second liquid can be supplied to the chamber. That is, in accordance with the combination of the substrate to be processed such as a wafer and the photoresist to be used, the optimum gas atmosphere and the concentration thereof can be easily selected, the optimum gas atmosphere can be supplied to the chamber, and the gas atmosphere formed in the subsequent processing can be formed. Good adhesiveness of the photoresist film can be obtained.
Further, the first liquid flow rate control unit and the second liquid flow rate control unit can arbitrarily set the mixing ratio of the first liquid and the second liquid and the gas concentration according to the type of the substrate to be processed and the photoresist. Can be changed to That is, it is possible to generate a gas atmosphere for obtaining the optimum adhesion strength of the photoresist film in accordance with the substrate to be processed and the photoresist.
[0013]
Here, it is preferable that the first liquid flow control unit and the second liquid flow control unit include a needle valve for adjusting a flow rate of each liquid. As described above, since the liquid flow rate is controlled by the needle valve, the supply flow rate of the liquid for forming the gas atmosphere can be easily and accurately controlled.
[0014]
In addition, it is preferable that a gas temperature control unit that controls the temperature of the gas vaporized by the vaporization unit is provided around the gas supply line.
With this configuration, the temperature of the gas supplied into the chamber can be adjusted by the gas temperature controller. By adjusting the gas atmosphere to a predetermined temperature, dew condensation of the gas can be suppressed, and the influence on the processing substrate due to a decrease in the gas temperature can be suppressed.
[0015]
Further, it is preferable that a substrate temperature adjusting section for adjusting the temperature of the substrate to be processed placed in the chamber is provided in the lower body of the chamber. With such a configuration, the temperature of the substrate to be processed in the chamber can be optimally adjusted. That is, the temperature of the substrate to be processed can be maintained at an optimum temperature for the hydrophobic treatment.
[0016]
Further, in the vaporizing section, it is preferable that the first liquid controlled and supplied by the first liquid flow rate control section is vaporized by supplying the first liquid into a flow of a carrier gas. It is desirable that the second liquid controlled and supplied by the second liquid flow rate control unit be vaporized by being supplied into the flow of the carrier gas. Further, in the vaporizing section, the first liquid controlled and supplied by the first liquid flow rate control section and the second liquid controlled and supplied by the second liquid flow rate control section are separated by a carrier gas. It is desirable to vaporize and mix them by feeding them into the stream.
With such a configuration, the vaporization unit can be downsized and the vaporization process can be performed in a shorter time than in the case of vaporizing by, for example, a bubbling method.
[0017]
Further, the vaporizing unit includes an orifice plate in a tube of a carrier gas line, and supplies the first liquid and / or the second liquid into the flow of the carrier gas passing through the orifice plate. Preferably, the first liquid and / or the second liquid are vaporized.
Thus, by providing the orifice plate in the pipe of the carrier gas line, the flow velocity of the carrier gas passing through the orifice plate is increased. As a result, the liquid supplied in the flow of the carrier gas is atomized and vaporized.
Therefore, conventionally, a liquid placed in a closed tank is naturally vaporized, and the gas atmosphere is changed to, for example, N 2. ₂ A gas atmosphere can be supplied to the chamber more stably without being affected by the ambient temperature of the apparatus, as compared with the case where the wafer is pressure-fed and supplied into the chamber in which the wafer is stored.
[0018]
Further, a concentration sensor for detecting the concentration of the gaseous atmosphere is provided in the chamber, and the first liquid flow controller and / or the second liquid flow controller controls the first liquid flow controller based on a detection signal from the concentration sensor. It is desirable to be done.
As described above, since the first liquid flow rate control unit and the second liquid flow rate control unit are controlled based on the detection signal from the concentration sensor, a gas atmosphere having an optimal component and concentration is supplied into the chamber. be able to.
[0019]
Further, the first liquid is HMDS (hexamethyldisilazane), the second liquid is TMSDEA (trimethylsilyldiethylamine), or the first liquid is TMSDEA (trimethylsilyldiethylamine), and the second liquid is HMDS (hexamethyldisilazane). It is desirable that
Thus, a gas atmosphere of HMDS (hexamethyldisilazane), a gas atmosphere of TMSDEA (trimethylsilyldiethylamine), or a mixed gas atmosphere of HMDS (hexamethyldisilazane) and TMSDEA (trimethylsilyldiethylamine) can be supplied to the chamber. .
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, an overall configuration of a resist coating / developing processing system equipped with an adhesion unit, which is a hydrophobic processing apparatus according to an embodiment of the present invention, will be described in detail. FIG. 1 is a plan view schematically showing the overall configuration of a resist coating / developing processing system equipped with an adhesion unit, which is a hydrophobizing apparatus according to an embodiment of the present invention, FIG. 2 is a front view thereof, and FIG. Is a rear view thereof.
[0021]
Reference numeral 1 in FIG. 1 denotes a resist coating / developing processing system. The resist coating / developing processing system 1 transfers a wafer W between a cassette station 10 as a transfer station, a processing station 11 having a plurality of processing units, and an exposure apparatus (not shown) provided adjacent to the processing station 11. And an interface unit 12 for delivery.
The cassette station 10 loads a plurality of wafers (hereinafter, simply referred to as wafers) W as substrates to be processed into another system, for example, in a state of being mounted on the wafer cassette CR in a unit of 25 wafers, or loads the wafer W from this system. This is for carrying out the wafer W to another system or carrying the wafer W between the wafer cassette CR and the processing station 11.
[0022]
In the cassette station 10, as shown in FIG. 1, a plurality of (four in the figure) positioning projections 20a are formed on the mounting table 20 in the X direction in the figure. The cassettes CR can be placed in a line with the entrances and exits of the wafers W facing the processing station 11 side. In the wafer cassette CR, the wafers W are arranged in a vertical direction (Z direction).
[0023]
Further, the cassette station 10 has a wafer transfer mechanism 21 located between the mounting table 20 and the processing station 11. The wafer transfer mechanism 21 has a wafer transfer arm 21a movable in a cassette arrangement direction (X direction) and a wafer arrangement direction (Z direction) of the wafers W therein. Can be selectively accessed. Further, the wafer transfer arm 21a is configured to be rotatable in the θ direction, and a third processing unit G on the processing station 11 side described later is provided. ₃ Can be accessed also to the alignment unit (ALIM) and extension unit (EXT) belonging to.
[0024]
The processing station 11 includes a plurality of processing units for performing a series of steps when performing coating and development on the wafer W, and these are arranged in multiple stages at predetermined positions. Processed one by one. As shown in FIG. 1, the processing station 11 has a transfer path 22a at the center, in which a main wafer transfer mechanism 22 is provided, and all the processing units are arranged around the transfer path 22a. These processing units are divided into a plurality of processing units, and in each processing unit, a plurality of processing units are arranged in multiple stages along the vertical direction.
[0025]
As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a tubular support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is rotatable by a rotational driving force of a motor (not shown), and accordingly, the wafer transfer mechanism 46 is also integrally rotatable.
[0026]
The wafer transfer mechanism 46 includes a plurality of holding members 48 movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48.
Also, as shown in FIG. 1, in this embodiment, four processing units G ₁ , G ₂ , G ₃ , G ₄ Are disposed around the wafer transfer path 22a, and the processing unit G ₅ Can be arranged as needed.
[0027]
Among these, the first and second processing units G ₁ , G ₂ Are arranged in parallel on the front side of the system (front side in FIG. 1), and the third processing unit G ₃ Is disposed adjacent to the cassette station 10 and the fourth processing unit G ₄ Are arranged adjacent to the interface unit 12. Further, the fifth processing unit G ₅ Can be arranged on the back.
[0028]
As shown in FIG. 2, the first processing unit G ₁ In this example, a resist coating unit (COT) for coating a resist on a wafer W and a developing unit (DEV) for developing a resist pattern are stacked in two stages from the bottom. Second processing unit G ₂ Similarly, as two spinner-type processing units, a resist coating unit (COT) and a developing unit (DEV) are stacked in two stages from the bottom.
[0029]
Third processing unit G ₃ In FIG. 3, as shown in FIG. 3, oven-type processing units for performing a predetermined process by mounting a wafer W on a mounting table SP are stacked in multiple stages. That is, an adhesion unit (AD) according to an embodiment of the present invention for performing a so-called hydrophobizing process for improving the fixability of a resist, an alignment unit (ALIM) for positioning, and an extension unit for loading / unloading a wafer W. (EXT), a cooling unit (COL) for performing a cooling process, and four hot plate units (HP) for performing a heating process on the wafer W before and after the exposure process, and further after the development process, in eight stages from the bottom. It is overlaid. Note that a cooling unit (COL) may be provided instead of the alignment unit (ALIM), and the cooling unit (COL) may have an alignment function.
[0030]
Fourth processing unit G ₄ Also, oven-type processing units are stacked in multiple stages. That is, the cooling unit (COL), the extension cooling unit (EXTCOL) which is a wafer loading / unloading section provided with a cooling plate, the extension unit (EXT), the cooling unit (COL), and the four hot plate units (HP) are located below. From top to bottom.
[0031]
A fifth processing unit G is provided on the back side of the main wafer transfer mechanism 22. ₅ Is provided, it can be moved laterally along the guide rail 25 when viewed from the main wafer transfer mechanism 22. Therefore, the fifth processing unit G ₅ Is provided, a space is secured by sliding the guide rail 25 along the guide rail 25, so that maintenance work can be easily performed from behind the main wafer transfer mechanism 22.
[0032]
The interface section 12 has the same length as the processing station 11 in the depth direction (X direction). As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is provided at the center. The wafer transfer mechanism 24 has a wafer transfer arm 24a. The wafer transfer arm 24a moves in the X direction and the Z direction to be able to access both cassettes CR, BR and the peripheral exposure device 23. ing. Further, the wafer transfer arm 24a is rotatable in the θ direction, and the fourth processing unit G of the processing station 11 ₄ And an extension unit (EXT) belonging to, and a wafer sink (not shown) on the adjacent exposure apparatus side can be accessed.
[0033]
In such a resist coating / developing processing system 1, first, in the cassette station 10, the wafer transfer arm 21 a of the wafer transfer mechanism 21 is moved to the wafer cassette CR containing the unprocessed wafer W on the mounting table 20. Access to take out one wafer W from the wafer cassette CR, and ₃ To the extension unit (EXT).
[0034]
The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22. Then, the third processing unit G ₃ After being aligned by the alignment unit (ALIM), the wafer is conveyed to an adhesion unit (AD), where it is subjected to a hydrophobizing treatment for improving the fixability of the resist. Since this process involves heating, the wafer W is then transferred to a cooling unit (COL) by the wafer transfer device 46 and cooled.
[0035]
The wafer W cooled by the cooling unit (COL) after the adhesion processing, that is, the hydrophobic processing is completed, is subsequently transferred by the wafer transfer device 46 to the resist coating unit (COT), where a coating film is formed. After the coating process is completed, the wafer W is processed by the processing unit G. ₃ , G ₄ Is prebaked in any one of the hot plate units (HP), and then cooled in any one of the cooling units (COL).
[0036]
The cooled wafer W is supplied to the third processing unit G ₃ Is transported to the alignment unit (ALIM), where the alignment is performed. ₄ Is transferred to the interface unit 12 via the extension unit (EXT).
In the interface unit 12, after peripheral exposure for removing extra resist is performed on a portion of, for example, 1.5 mm around the wafer periphery by the peripheral exposure device 23, the exposure device (not shown) provided adjacent to the interface unit 12 performs exposure. An exposure apparatus is applied to the resist film on the wafer W according to a predetermined pattern.
[0037]
The wafer W after the exposure is returned to the interface unit 12 again, and the fourth processing unit G is ₄ Is transferred to the extension unit (EXT) belonging to. Then, the wafer W is transferred to one of the hot plate units (HP) by the wafer transfer mechanism 46, subjected to post-exposure bake processing, and then cooled by the cooling unit (COL).
[0038]
Thereafter, the wafer W is transported to a developing unit (DEV), where the exposure pattern is developed and the peripheral resist is removed. After the development is completed, the wafer W is transferred to any one of the hot plate units (HP), subjected to post-baking, and then cooled by the cooling unit (COL). After such a series of processing is completed, the third processing unit G ₃ Is returned to the cassette station 10 via the extension unit (EXT), and is stored in one of the wafer cassettes CR.
[0039]
Subsequently, with reference to FIG. 4 and FIG. 5, a hydrophobization processing apparatus according to an embodiment of the present invention, that is, an adhesion unit (AD) will be described in detail. FIG. 4 is a schematic sectional view of the adhesion unit (AD). FIG. 5 is an enlarged cross-sectional view around the liquid flow control unit shown in FIG.
[0040]
As shown in FIG. 4, the adhesion unit (AD) includes a chamber 50 for accommodating a wafer W and a gas supply unit 60. The chamber 50 is a container for exposing the wafer W housed therein to a gaseous atmosphere. The chamber 50 supports a wafer W and houses a heating plate 53 that heats the wafer W. And a cover member 51b provided to be able to open and close with respect to the chamber lower body 51a.
[0041]
The heating plate 53 is provided with a substrate temperature adjusting section 54 composed of a heater for adjusting the temperature of the substrate. On the surface of the heating plate 53, for example, six positioning pins 58 are provided. The positioning pins 58 function as spacers, and the wafer W is positioned by the positioning pins and arranged at a position separated from the heating plate 53, so that the wafer W is heated by a so-called proximity method.
[0042]
In addition, a gas supply line 59 formed in a tubular shape and serving as a gas passage is provided on a ceiling portion of the cover member 51b, and an outlet of the gas supply line 59 is provided in a gas atmosphere chamber in which the wafer W is stored. 55. On an upper side surface of the cover member 51b, a connection portion 57 for connecting a lead-out portion of the carrier gas line 61 formed in a tubular shape and an introduction portion of the gas supply line 59 is provided.
Further, a gas temperature control section 52 composed of a heater is provided around the gas supply line 59 on the ceiling of the cover member 51b, and the gas in the gas supply line 59 is controlled by the gas temperature control section 52 to a predetermined level. It can be heated to a temperature of
[0043]
The gas atmosphere chamber 55 is formed in a state where the cover member 51b covers the upper surface of the chamber lower body 51a, and the upper surface of the heating plate 53 is the lower surface of the gas atmosphere chamber 55.
Further, an exhaust port 56 is provided on a side wall surface in the gas atmosphere chamber 55 so as to exhaust the gas atmosphere after the hydrophobic treatment.
[0044]
On the other hand, the gas supply unit 60 generates gas to be supplied to the gas atmosphere chamber 55, and the gas supply unit 60 is connected to a carrier gas line 61 formed in a tubular shape and to the carrier gas line 61. A first liquid supply line 62, a second liquid supply line 63, a liquid flow controller 70 for controlling the supply flow rates of the first and second liquids to the carrier gas line 61, and a carrier gas line 61 And an orifice plate 80 provided in the inside.
[0045]
The carrier gas line 61 extends from the carrier gas supply port 64 via the liquid flow control unit 70 to the chamber 50. The carrier gas is an inert gas such as N ₂ Gas is generally used, but is not particularly limited thereto. Then, the carrier gas (N ₂ As for the traveling direction of the gas, the carrier gas supply port 64 side is upstream and the chamber 50 side is downstream.
Further, in a pipeline of the carrier gas line 61, a first liquid supply line 62 and a second liquid supply line 63 are connected to the carrier gas line 61, and the first and second liquid supply lines are connected to the connection portion. A liquid flow control unit 70 for controlling the supply flow rate is provided.
[0046]
The first liquid supply line 62 supplies a chemical such as HMDS (hexamethyldisilazane), and the second liquid supply line 63 supplies a chemical such as TMSDEA (trimethylsilyldiethylamine) different from HMDS, for example. It is configured as follows.
[0047]
As shown in FIG. 5, an orifice plate 80 is provided upstream of the liquid flow control unit 70 to vaporize the liquid supplied under the control of the liquid flow control unit 70.
The orifice plate 80 is a plate provided with a vent hole and provided vertically in the tube of the carrier gas line 61, and constitutes a vaporizer for vaporizing a liquid together with the carrier gas line 61.
That is, when the carrier gas flows in the pipe of the carrier gas line 61, a differential pressure is generated between the upstream and downstream sides of the orifice plate 80, and the flow velocity of the carrier gas increases. When the liquid is supplied into the carrier gas having the increased flow velocity, the liquid is atomized by the carrier gas and vaporized.
[0048]
The liquid flow controller 70 controls a supply flow rate of a liquid for forming a gaseous atmosphere. As shown in FIG. 5, an electropneumatic valve 71 serving as a first liquid flow controller is provided. It is constituted by an electropneumatic valve 72 which is a second liquid flow rate control unit.
The electropneumatic valve 71 includes a needle driving unit 71a and a needle valve 71b, and the needle valve 71b is disposed so as to be movable in the carrier gas line 61 in the vertical direction. The needle valve 71b is formed so as to be vertically movable by a needle driving unit 71a by an electro-pneumatic method, so that by driving the needle driving unit 71a, the needle valve 71b is moved toward the needle driving unit 71a, that is, upward. When moved, the opening 73a is opened. On the other hand, when the needle valve 71b moves downward and its tip comes into contact with the needle valve seat 73 provided in the carrier gas line 61, the opening 73a of the needle valve seat 73 is closed.
Since the needle valve 71b has a conical shape, the movement of the needle valve 71b with respect to the needle valve seat 73 can accurately control the change in the flow area of the liquid (the opening degree of the opening 73a). And the flow rate can be finely adjusted.
[0049]
As described above, since the opening degree of the opening 73a of the needle valve seat 73 changes in accordance with the amount of movement of the needle valve 71b, by controlling the amount of movement of the needle valve 71b, it is possible to form a gas atmosphere. The supply flow rate of the liquid can be easily controlled.
The moving amount of the needle valve 71b is configured to be controlled by the valve controller 92 based on a program preset in the arithmetic unit 91 as shown in FIG. Further, during the processing, the detection signal from the concentration sensor 90 is processed by the calculation device 91, and based on this, the moving amount of the needle valve 71b is controlled by the valve controller 92.
[0050]
The electropneumatic valve 72, which is a second liquid flow control unit, is provided in parallel with the electropneumatic valve 71, that is, on the downstream side (chamber side) of the carrier gas line 61. The electropneumatic valve 72 has the same configuration as the electropneumatic valve 71, and the needle valve 72b is formed to be vertically movable by a needle driving unit 72a by an electropneumatic method.
The opening 74a is opened when the needle valve 72b moves toward the needle driving unit 72a, that is, in the upward direction, by the driving of the needle driving unit 72a. On the other hand, when the needle valve 72b moves downward and its tip abuts on the needle valve seat 74 provided in the carrier gas line 61, the opening 74a of the needle valve seat 74 is closed. ing.
[0051]
The movement amount of the needle valve 72b is the same as that of the needle valve 71b, and is controlled by the valve controller 92 based on a program preset in the arithmetic unit 91. Further, during the processing, the detection signal from the concentration sensor 90 is subjected to arithmetic processing by the arithmetic unit 91, and based on this, the valve controller 92 controls the moving amount of the needle valve 72 b.
[0052]
As described above, since the liquid flow control unit 70 is constituted by the electro-pneumatic valve 71 as the first liquid flow control unit and the electro-pneumatic valve 72 as the second liquid flow control unit, the needle valve seat 73, The opening degrees of the openings 73a and 74a of the 74 are adjusted, and a gas atmosphere using only the first liquid (HMDS) or a gas atmosphere using only the second liquid (TMSDEA), and further, the first liquid (HMDS) and the first liquid (HMDS) are used. A mixed gas atmosphere with the liquid No. 2 (TMSDEA) can be supplied to the chamber.
That is, by adjusting the opening degrees of the openings 73a, 74a of the needle valve seats 73, 74, the first liquid and the second liquid can be selected according to the type of the wafer W and the photoresist. The mixing ratio between the first liquid and the second liquid and the concentration of the gas can be easily changed, and an optimal gas atmosphere for obtaining a resist film having high adhesion strength can be generated.
[0053]
Further, since the concentration sensor 90 is provided, the concentration of the gas atmosphere inside the gas atmosphere chamber 55 is monitored by the concentration sensor 90, so that an optimum gas atmosphere can be always obtained, and a stable hydrophobic treatment can be performed. It can be carried out.
[0054]
The gas generated by evaporating the liquid in this manner is N 2 which is a carrier gas. ₂ The gas is supplied from the carrier gas line 61 to the gas supply line 59. The gas is supplied to the gas atmosphere chamber 55 after the temperature of the gas is adjusted by the gas temperature control section 52 in the gas supply line 59. In the gas atmosphere chamber 55, a wafer W is previously disposed on a heating plate 53, and the wafer W is exposed to the gas for a predetermined time to perform a hydrophobic treatment.
[0055]
As described above, a desired gas atmosphere can be generated by selecting one of the two types of liquids, and an optimum adhesion strength can be obtained in accordance with the substrate to be processed such as the wafer W and the photoresist. Gas atmosphere can be generated.
[0056]
Further, by mixing two types of liquids to generate a gas atmosphere, and adjusting the mixing ratio and concentration in the liquid flow rate control unit 70, the gas having the mixing ratio and concentration corresponding to the combination of the wafer W and the photoresist is formed. Can be generated. That is, it is possible to generate a gas atmosphere for obtaining the optimum adhesion strength in accordance with the substrate to be processed such as the wafer W and the photoresist.
[0057]
Further, when the liquid is vaporized, the liquid is atomized and vaporized by using the orifice plate 80, so that the apparatus of the vaporization unit can be downsized as compared with a conventional apparatus of the bubbling type.
Furthermore, since the liquid is not heated and vaporized as in the bubbling method, a gas atmosphere can be efficiently generated without requiring time for the vaporization process.
Further, by providing the gas temperature control section 52 and the substrate temperature control section 54, dew condensation of the vaporized liquid on the inside of the chamber 50 and the wafer W can be prevented, and the influence on the wafer W due to a decrease in gas temperature can be suppressed. .
[0058]
In the above embodiment, the first liquid is HMDS (hexamethyldisilazane) and the second liquid is TMSDEA (trimethylsilyldiethylamine). Conversely, the first liquid is TMSDEA and the second liquid is TMSDEA. It may be HMDS. Further, in the hydrophobization treatment apparatus according to the present invention, the combination is not limited to the above-mentioned chemical solutions, but may be a combination other than these chemical solutions.
[0059]
In the above embodiment, the needle valves 71b and 72b are driven by an electropneumatic system, respectively. However, this is not limited to the electropneumatic system, and any other system that can drive the needle valves 71b and 72b may be used. May be.
In the above-described embodiment, the substrate accommodated in the chamber 50 is a wafer. However, the hydrophobic processing apparatus of the present invention can be applied to a substrate other than a wafer such as an LCD substrate. In this case, the optimal combination of chemicals and the amount of supply thereof may be determined according to the types of the substrate and the photoresist.
[0060]
【The invention's effect】
As described above, according to the present invention, an optimum gas atmosphere can be easily selected according to a combination of a substrate to be processed and a photoresist to be used, and a gas atmosphere having optimum components and concentrations can be supplied. Thus, it is possible to obtain a hydrophobizing treatment device that can be used.
[Brief description of the drawings]
FIG. 1 is a plan view schematically showing the overall configuration of a resist coating / developing processing system provided with a hydrophobizing apparatus according to one embodiment of the present invention.
FIG. 2 is a front view of the resist coating / developing processing system shown in FIG.
FIG. 3 is a rear view of the resist coating / developing system shown in FIG. 1;
FIG. 4 is a cross-sectional view showing an overall configuration of a hydrophobizing apparatus according to one embodiment of the present invention.
5 is a cross-sectional view of the liquid flow control unit 70 shown in FIG.
[Explanation of symbols]
50 chambers
51a Chamber lower body
51b cover member
52 Temperature control section
53 heating plate
54 Substrate temperature controller
55 gas atmosphere chamber
56 exhaust port
57 Connection
58 Positioning pin
59 Gas supply line
60 Gas supply unit
61 Carrier gas line
62 First liquid supply line
63 Second liquid supply line
64 Carrier gas supply port
70 Liquid flow control unit
71 Electro-pneumatic valve
71a Needle drive unit
71b Needle valve
72 Electro-pneumatic valve
72a Needle drive unit
72b needle valve
73 Needle valve seat
73a opening
74 Needle valve seat
74a opening
80 Orifice plate
90 concentration sensor
91 arithmetic unit
92 Valve controller

Claims (10)

In a hydrophobizing treatment apparatus that performs a hydrophobizing treatment by exposing a substrate to be processed to a gas atmosphere,
A chamber for accommodating the substrate to be processed;
A first liquid supply line for supplying a first liquid for forming the gas atmosphere;
A second liquid supply line for supplying a second liquid for forming the gas atmosphere;
A first liquid flow rate control unit that controls a supply flow rate of the first liquid;
A second liquid flow rate control unit that controls a supply flow rate of the second liquid,
A vaporizer for vaporizing the first liquid supplied from the first liquid supply line and / or the second liquid supplied from the second liquid supply line;
A carrier gas line for supplying a carrier gas for transporting the gas vaporized by the vaporization unit,
A gas supply line for transporting the gas vaporized by the vaporization unit with the carrier gas and supplying the gas into the chamber. 2. The hydrophobization apparatus according to claim 1, wherein the first liquid flow control unit and the second liquid flow control unit each include a needle valve that adjusts a flow rate of each liquid. 3. 3. The hydrophobizing apparatus according to claim 1, wherein a gas temperature control unit that controls a temperature of the gas vaporized by the vaporizing unit is provided around the gas supply line. 4. The hydrophobic device according to any one of claims 1 to 3, wherein a substrate temperature controller for adjusting a temperature of the substrate to be processed placed in the chamber is provided in a lower body of the chamber. Processing equipment. 5. The vaporizer according to claim 1, wherein the first liquid controlled and supplied by the first liquid flow controller is vaporized by supplying the first liquid into a flow of a carrier gas. The hydrophobization treatment device described in any of the above. 5. The vaporizer according to claim 1, wherein the second liquid controlled and supplied by the second liquid flow controller is supplied into the flow of the carrier gas to vaporize the second liquid. 6. The hydrophobization treatment device described in any of the above. In the vaporizing section, the first liquid controlled and supplied by the first liquid flow rate control section and the second liquid controlled and supplied by the second liquid flow rate control section are flowed by a carrier gas flow. The hydrophobic treatment apparatus according to any one of claims 1 to 4, wherein the apparatus is vaporized and mixed by being supplied into the apparatus. The vaporization unit includes an orifice plate in a pipe of a carrier gas line, and supplies the first liquid and / or the second liquid during the flow of the carrier gas passing through the orifice plate, 8. The hydrophobizing apparatus according to claim 5, wherein the first liquid and / or the second liquid are vaporized. A concentration sensor for detecting the concentration of a gaseous atmosphere is provided in the chamber, and the first liquid flow control unit and / or the second liquid flow control unit is controlled based on a detection signal from the concentration sensor. The hydrophobizing apparatus according to any one of claims 1 to 8, wherein: The first liquid is HMDS (hexamethyldisilazane), the second liquid is TMSDEA (trimethylsilyldiethylamine), or the first liquid is TMSDEA (trimethylsilyldiethylamine), and the second liquid is HMDS (hexamethyldisilazane). The hydrophobizing apparatus according to any one of claims 1 to 9, wherein:

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