JPS56137348A - Negative type ionized radiation sensitive resist - Google Patents

Negative type ionized radiation sensitive resist

Info

Publication number
JPS56137348A
JPS56137348A JP4008280A JP4008280A JPS56137348A JP S56137348 A JPS56137348 A JP S56137348A JP 4008280 A JP4008280 A JP 4008280A JP 4008280 A JP4008280 A JP 4008280A JP S56137348 A JPS56137348 A JP S56137348A
Authority
JP
Japan
Prior art keywords
resist
ionized radiation
negative type
radiation sensitive
monomer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4008280A
Other languages
Japanese (ja)
Other versions
JPS6311654B2 (en
Inventor
Yuzo Shimazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4008280A priority Critical patent/JPS56137348A/en
Publication of JPS56137348A publication Critical patent/JPS56137348A/en
Publication of JPS6311654B2 publication Critical patent/JPS6311654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)

Abstract

PURPOSE:To obtain a negative type resist sensitive to ionized radiation by using a halogenated allyl ester of acrylic acid or methacrylic acid. CONSTITUTION:A polymer represented by the formula (where R is H or CH3 and X is halogen such as F or Cl) or a copolymer of the monomer and other monomer is dissolved in a solvent to prepare a resist soln. This soln. is applied to a semiconductor substrate or a mask substrate with a spinner, dried, and prebaked. The resulting film is then exposed to ionized radiation such as electron beams or X-rays and developed. By introducing halogenated allyl groups, the polymer shows high cross-linkability to radiation and is provided with superhigh sensitivity as a resist, and a high- density resist pattern of submicron unit can be formed.
JP4008280A 1980-03-28 1980-03-28 Negative type ionized radiation sensitive resist Granted JPS56137348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4008280A JPS56137348A (en) 1980-03-28 1980-03-28 Negative type ionized radiation sensitive resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4008280A JPS56137348A (en) 1980-03-28 1980-03-28 Negative type ionized radiation sensitive resist

Publications (2)

Publication Number Publication Date
JPS56137348A true JPS56137348A (en) 1981-10-27
JPS6311654B2 JPS6311654B2 (en) 1988-03-15

Family

ID=12570973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4008280A Granted JPS56137348A (en) 1980-03-28 1980-03-28 Negative type ionized radiation sensitive resist

Country Status (1)

Country Link
JP (1) JPS56137348A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024969A (en) * 1990-02-23 1991-06-18 Reche John J Hybrid circuit structure fabrication methods using high energy electron beam curing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024969A (en) * 1990-02-23 1991-06-18 Reche John J Hybrid circuit structure fabrication methods using high energy electron beam curing

Also Published As

Publication number Publication date
JPS6311654B2 (en) 1988-03-15

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