JPS5476136A - Resist material for microprocessing - Google Patents

Resist material for microprocessing

Info

Publication number
JPS5476136A
JPS5476136A JP14228277A JP14228277A JPS5476136A JP S5476136 A JPS5476136 A JP S5476136A JP 14228277 A JP14228277 A JP 14228277A JP 14228277 A JP14228277 A JP 14228277A JP S5476136 A JPS5476136 A JP S5476136A
Authority
JP
Japan
Prior art keywords
resist material
far ultraviolet
resist
microprocessing
micropattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14228277A
Other languages
Japanese (ja)
Other versions
JPS5514413B2 (en
Inventor
Yoshio Yamashita
Ken Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP14228277A priority Critical patent/JPS5476136A/en
Publication of JPS5476136A publication Critical patent/JPS5476136A/en
Publication of JPS5514413B2 publication Critical patent/JPS5514413B2/ja
Granted legal-status Critical Current

Links

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  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PURPOSE: To form a micropattern superior in sensitivity, resolution, and adhesivity in far ultraviolet lithography, by using a resist of an acrylic polymer having an alkyl group substituted by bromine.
CONSTITUTION: A resist material is made of a polyacrylic acid ester represented by the formula in which R is brominated alkyl and n is a polymerization degree. For example, a polymer obtained by radical polymerization of 2, 3-dibromo-1-n-propyl acrylate is dissolved in a solvent, such as methoxyethyl acetate to form a resist material, and this is coated on a oxidized silicon film by a spin coating method, dried, and then, irradiated with far ultraviolet rays through a mask to form a desired pattern.
COPYRIGHT: (C)1979,JPO&Japio
JP14228277A 1977-11-29 1977-11-29 Resist material for microprocessing Granted JPS5476136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14228277A JPS5476136A (en) 1977-11-29 1977-11-29 Resist material for microprocessing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14228277A JPS5476136A (en) 1977-11-29 1977-11-29 Resist material for microprocessing

Publications (2)

Publication Number Publication Date
JPS5476136A true JPS5476136A (en) 1979-06-18
JPS5514413B2 JPS5514413B2 (en) 1980-04-16

Family

ID=15311731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14228277A Granted JPS5476136A (en) 1977-11-29 1977-11-29 Resist material for microprocessing

Country Status (1)

Country Link
JP (1) JPS5476136A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179851A (en) * 1981-04-30 1982-11-05 Tokyo Ohka Kogyo Co Ltd Formation of pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179851A (en) * 1981-04-30 1982-11-05 Tokyo Ohka Kogyo Co Ltd Formation of pattern

Also Published As

Publication number Publication date
JPS5514413B2 (en) 1980-04-16

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