JPS578541A - Positive type resist material - Google Patents

Positive type resist material

Info

Publication number
JPS578541A
JPS578541A JP8134380A JP8134380A JPS578541A JP S578541 A JPS578541 A JP S578541A JP 8134380 A JP8134380 A JP 8134380A JP 8134380 A JP8134380 A JP 8134380A JP S578541 A JPS578541 A JP S578541A
Authority
JP
Japan
Prior art keywords
positive type
resist material
type resist
alkoxyalkyl
etching resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8134380A
Other languages
Japanese (ja)
Inventor
Tsukasa Tada
Akira Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8134380A priority Critical patent/JPS578541A/en
Publication of JPS578541A publication Critical patent/JPS578541A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PURPOSE:To obtain a resist film having high radiation sensitivity, high resolution and dry etching resistance and suitable for forming a micropattern for a photomask, etc. by using a specified alkoxyalkyl methacrylate polymer as a positive type resist material. CONSTITUTION:A polymer of a monomer represented by the formula [where R is 2-10C alkoxyalkyl such as CH2OCH3, CH2CH2OCH3, CH2CH2CH2OCH3 or CH (OCH3)CH3] is dissolved in methylcellosolve acetate or the like optionally together with an adequate amount of a methacrylate polymer or polybutene 1-sulfone, and the soln. is applied to a semiconductor substrate or a mask substrate, dried and crosslinked by heating to form a resist film. The film is patterned with electron beams, etc. and wet or dry developed to obtain a pattern with high accuracy, high sensitivity and etching resistance.
JP8134380A 1980-06-18 1980-06-18 Positive type resist material Pending JPS578541A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8134380A JPS578541A (en) 1980-06-18 1980-06-18 Positive type resist material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8134380A JPS578541A (en) 1980-06-18 1980-06-18 Positive type resist material

Publications (1)

Publication Number Publication Date
JPS578541A true JPS578541A (en) 1982-01-16

Family

ID=13743716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8134380A Pending JPS578541A (en) 1980-06-18 1980-06-18 Positive type resist material

Country Status (1)

Country Link
JP (1) JPS578541A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171844U (en) * 1987-08-19 1988-11-08
EP1548498A1 (en) * 2002-08-20 2005-06-29 Kyowa Hakko Chemical Co., Ltd. Composition sensitive to visible light
WO2014017663A1 (en) * 2012-07-27 2014-01-30 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171844U (en) * 1987-08-19 1988-11-08
EP1548498A1 (en) * 2002-08-20 2005-06-29 Kyowa Hakko Chemical Co., Ltd. Composition sensitive to visible light
EP1548498A4 (en) * 2002-08-20 2009-03-25 Kyowa Hakko Chemical Co Ltd Composition sensitive to visible light
WO2014017663A1 (en) * 2012-07-27 2014-01-30 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin
JP2014041326A (en) * 2012-07-27 2014-03-06 Fujifilm Corp Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, method for manufacturing electronic device, electronic device, and resin
US9291898B2 (en) 2012-07-27 2016-03-22 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin

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