JPS54112627A - Resist composition - Google Patents

Resist composition

Info

Publication number
JPS54112627A
JPS54112627A JP1907878A JP1907878A JPS54112627A JP S54112627 A JPS54112627 A JP S54112627A JP 1907878 A JP1907878 A JP 1907878A JP 1907878 A JP1907878 A JP 1907878A JP S54112627 A JPS54112627 A JP S54112627A
Authority
JP
Japan
Prior art keywords
far ultraviolet
etching
ultraviolet rays
resist pattern
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1907878A
Other languages
Japanese (ja)
Inventor
Yoshio Yamashita
Ken Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1907878A priority Critical patent/JPS54112627A/en
Publication of JPS54112627A publication Critical patent/JPS54112627A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PURPOSE: To form a resist pattern resistant not only to wet etching but also to dry etching in far ultraviolet lithography, by introducing a C-Br bond in the side chain of methacrylic acid ester.
CONSTITUTION: A polymer of the formula in which R is a brominated alkyl and n is a polymerization degree, or a copolymer of this is dissolved in a proper solvent to form a negative type polymer resist composition having a sensitivity capable of sufficiently photopolymerizing by the far ultraviolet rays in the wavelength range of 1800 to 3000Å. This composition is coated and dried on a substrate, then irradiated by the far ultraviolet rays through a mask, and developed with a solvent, such as toluene. The resist pattern formed has a cross-linking structure containing bromine, a decomposition temp, ad high as 270°C, and resistance to ion plasma, and it can be used for ion etching and plasma etching, and has high sensitivity and high resolution.
COPYRIGHT: (C)1979,JPO&Japio
JP1907878A 1978-02-23 1978-02-23 Resist composition Pending JPS54112627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1907878A JPS54112627A (en) 1978-02-23 1978-02-23 Resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1907878A JPS54112627A (en) 1978-02-23 1978-02-23 Resist composition

Publications (1)

Publication Number Publication Date
JPS54112627A true JPS54112627A (en) 1979-09-03

Family

ID=11989395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1907878A Pending JPS54112627A (en) 1978-02-23 1978-02-23 Resist composition

Country Status (1)

Country Link
JP (1) JPS54112627A (en)

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