JPS5518672A - Ionized radiation sensitive negative type resist - Google Patents

Abstract

PURPOSE:To form an ionized radiation sensitive negative type resist having high sensitivity and resolution, low molecular weight, and superior dry etching resistance, by using a polymer consisting mainly of an acrylate derivative monomer containing chlorine or sulfur. CONSTITUTION:A ten weight % solution of a polymer or copolymer with a molecular weight less than 50,000 of 3-monochloromethyl methacrylate or the like represented by the formula shown in which R is H, alkyl, monochloromethyl, or Cl, R' is O or S; and R'' is methyl or chlorinated alkyl, and when R' is O, R is monochloroethyl or Cl, or R'' is chlorinated alkyl, is coated and dried on a substrate, such as chromium mask to form a resist film. This is irradiated by eletron rays or the like to form a pattern and this pattern is developed. The disclosed part of the substrate undergoes dry etching or wet etching. Cross linking performance due to ionized radiation is improved by the effect of the intramolecular Cl or S, resulting in enlarging difference between the exposed part and the unexposed part even in a low molecular weight, and the resist molecules are prevented from swelling and oozing out of the irradiated part, thus permitting enhancement of sensitivity, resolution, and dry etching resistance performance.