JPS5639537A - Ionized radiation sensitive resist - Google Patents
Ionized radiation sensitive resistInfo
- Publication number
- JPS5639537A JPS5639537A JP11494979A JP11494979A JPS5639537A JP S5639537 A JPS5639537 A JP S5639537A JP 11494979 A JP11494979 A JP 11494979A JP 11494979 A JP11494979 A JP 11494979A JP S5639537 A JPS5639537 A JP S5639537A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- methacrylate
- radiation sensitive
- copolymer
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a composition having high sensitivity and high resolution and fit for a minute working technique, especially a photoetching technique for manufacturing super LSI by using a copolymer of trichloroethyl methacrylate and alkyl methacrylate.
CONSTITUTION: This composition is a copolymer of trichloroethyl methacrylate and dichloroethyl methacrylate. The copolymn. ratio can arbitrarily be selected in the 99:1W1:99 range, yet it is advantageous to copolymerize the monomers in 99:1W 50:50 in case of use as a positive type resist and in 40:60W1:99 in case of use as a negative type resist. The resulting ionized radiation sensitive resist is dissolved in a suitable solvent, and this resist soln. is applied to a semiconductor substrate or a mask substrate, dried, and prebaked to produce an about 0.1W2μm thick resist film, which is then patterned and developed to form a resist pattern. The exposed part of the substrate is dry or wet etched.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11494979A JPS5639537A (en) | 1979-09-07 | 1979-09-07 | Ionized radiation sensitive resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11494979A JPS5639537A (en) | 1979-09-07 | 1979-09-07 | Ionized radiation sensitive resist |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10100681A Division JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5639537A true JPS5639537A (en) | 1981-04-15 |
JPS5719409B2 JPS5719409B2 (en) | 1982-04-22 |
Family
ID=14650638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11494979A Granted JPS5639537A (en) | 1979-09-07 | 1979-09-07 | Ionized radiation sensitive resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5639537A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01253121A (en) * | 1988-03-31 | 1989-10-09 | Taiyo Yuden Co Ltd | Manufacture of cross conductor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5344441A (en) * | 1976-10-04 | 1978-04-21 | Ibm | Material for resist |
JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
-
1979
- 1979-09-07 JP JP11494979A patent/JPS5639537A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5344441A (en) * | 1976-10-04 | 1978-04-21 | Ibm | Material for resist |
JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01253121A (en) * | 1988-03-31 | 1989-10-09 | Taiyo Yuden Co Ltd | Manufacture of cross conductor |
Also Published As
Publication number | Publication date |
---|---|
JPS5719409B2 (en) | 1982-04-22 |
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