JPS57108847A - Negative type resist sensitive to ionized radiation - Google Patents
Negative type resist sensitive to ionized radiationInfo
- Publication number
- JPS57108847A JPS57108847A JP10100681A JP10100681A JPS57108847A JP S57108847 A JPS57108847 A JP S57108847A JP 10100681 A JP10100681 A JP 10100681A JP 10100681 A JP10100681 A JP 10100681A JP S57108847 A JPS57108847 A JP S57108847A
- Authority
- JP
- Japan
- Prior art keywords
- methacrylate
- resist
- negative type
- dichloroethyl
- type resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Abstract
PURPOSE:To improve sensitivity and resolution, by using a copolymer of trichloroethyl methacrylate and dichloroethyl methacrylate for a negative type resist. CONSTITUTION:A copolymer used for a negative type resist is obtained by copolymerizing trichloroethyl methacrylate and dichloroethyl methacrylate in 40:60-1:99 ratio. Use of <=60% dichloroethyl methacrylate drops sensitivity and resolution, and use of >=99% easily causes cross-linking in treatment of prebaking or the like and drops stability. Intramolecular cross-linking is remarkably accelerated by ionized radiation and further, ion etching resistance of a formed resist pattern is improved because of characteristics of each monomer and chlorine in the resist. A resist film with 0.1-2mum thickness is used. It is prepared by coating a resist solution on a substrate, drying, and prebaking it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10100681A JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10100681A JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11494979A Division JPS5639537A (en) | 1979-09-07 | 1979-09-07 | Ionized radiation sensitive resist |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57108847A true JPS57108847A (en) | 1982-07-07 |
JPH0124290B2 JPH0124290B2 (en) | 1989-05-11 |
Family
ID=14289157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10100681A Granted JPS57108847A (en) | 1981-06-29 | 1981-06-29 | Negative type resist sensitive to ionized radiation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57108847A (en) |
-
1981
- 1981-06-29 JP JP10100681A patent/JPS57108847A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0124290B2 (en) | 1989-05-11 |
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