JPS57132660A - Method of ion implantation - Google Patents

Method of ion implantation

Info

Publication number
JPS57132660A
JPS57132660A JP56017719A JP1771981A JPS57132660A JP S57132660 A JPS57132660 A JP S57132660A JP 56017719 A JP56017719 A JP 56017719A JP 1771981 A JP1771981 A JP 1771981A JP S57132660 A JPS57132660 A JP S57132660A
Authority
JP
Japan
Prior art keywords
axis
voltages
frequency
generated
deflection electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56017719A
Other languages
Japanese (ja)
Inventor
Tsunenori Yamauchi
Yasushi Nakamura
Yoshiharu Ito
Shigeru Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56017719A priority Critical patent/JPS57132660A/en
Publication of JPS57132660A publication Critical patent/JPS57132660A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Abstract

PURPOSE:To implant extrinsic ions uniformly in the whole surface of an wafer by applying sweep voltages with a continuously changing frequency between X- axis deflection electrodes and/or Y-axis deflection electrodes. CONSTITUTION:X-axis sweeep voltages 24 with the first frequency f1 generated by a generator 21 are applied to X-axis deflection electrodes 2X. Y-axis sweep voltages 25 generated by a generator 22 are applied to Y-axis deflection electrodes 2Y. Said Y-axis deflection voltages 25 are voltage waves, with the second frequency f2, frequecy modulated by a modulating frequecy f0 which is generated by a modulation frequency oscillator 23. An ion beam is swept on the whole surface of the wafer by the deflection electrode 2X, 2Y.
JP56017719A 1981-02-09 1981-02-09 Method of ion implantation Pending JPS57132660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017719A JPS57132660A (en) 1981-02-09 1981-02-09 Method of ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017719A JPS57132660A (en) 1981-02-09 1981-02-09 Method of ion implantation

Publications (1)

Publication Number Publication Date
JPS57132660A true JPS57132660A (en) 1982-08-17

Family

ID=11951549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017719A Pending JPS57132660A (en) 1981-02-09 1981-02-09 Method of ion implantation

Country Status (1)

Country Link
JP (1) JPS57132660A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143630A (en) * 1983-12-29 1985-07-29 Fujitsu Ltd Ion implantation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143630A (en) * 1983-12-29 1985-07-29 Fujitsu Ltd Ion implantation
EP0151811A2 (en) * 1983-12-29 1985-08-21 Fujitsu Limited Method for maskless ion implantation
JPH0213458B2 (en) * 1983-12-29 1990-04-04 Fujitsu Ltd

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