DE112005001029B4 - Halbleiterbauelement auf der Grundlage Si-Ge mit stark verspannter Beschichtung für eine verbesserte Kanalladungsträgerbeweglichkeit - Google Patents

Halbleiterbauelement auf der Grundlage Si-Ge mit stark verspannter Beschichtung für eine verbesserte Kanalladungsträgerbeweglichkeit Download PDF

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Publication number
DE112005001029B4
DE112005001029B4 DE112005001029.5T DE112005001029T DE112005001029B4 DE 112005001029 B4 DE112005001029 B4 DE 112005001029B4 DE 112005001029 T DE112005001029 T DE 112005001029T DE 112005001029 B4 DE112005001029 B4 DE 112005001029B4
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Prior art keywords
layer
deformed
transistor
gate electrode
silicon
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Expired - Lifetime
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DE112005001029.5T
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German (de)
English (en)
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DE112005001029T5 (de
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Sey-Ping Sun
David E. Brown
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
DE112005001029.5T 2004-05-05 2005-04-19 Halbleiterbauelement auf der Grundlage Si-Ge mit stark verspannter Beschichtung für eine verbesserte Kanalladungsträgerbeweglichkeit Expired - Lifetime DE112005001029B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/838,330 2004-05-05
US10/838,330 US7053400B2 (en) 2004-05-05 2004-05-05 Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility
PCT/US2005/013239 WO2005112127A1 (en) 2004-05-05 2005-04-19 SEMICONDUCTOR DEVICE BASED ON Si-Ge WITH HIGH STRESS LINER FOR ENHANCED CHANNEL CARRIER MOBILITY

Publications (2)

Publication Number Publication Date
DE112005001029T5 DE112005001029T5 (de) 2007-02-22
DE112005001029B4 true DE112005001029B4 (de) 2017-10-19

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DE112005001029.5T Expired - Lifetime DE112005001029B4 (de) 2004-05-05 2005-04-19 Halbleiterbauelement auf der Grundlage Si-Ge mit stark verspannter Beschichtung für eine verbesserte Kanalladungsträgerbeweglichkeit

Country Status (7)

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US (2) US7053400B2 (enExample)
JP (1) JP2007536736A (enExample)
CN (1) CN100533766C (enExample)
DE (1) DE112005001029B4 (enExample)
GB (1) GB2429116B (enExample)
TW (1) TWI411100B (enExample)
WO (1) WO2005112127A1 (enExample)

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US20050247926A1 (en) 2005-11-10
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