JP2007536736A - チャネルキャリア移動度向上のための高応力ライナーを備えたＳｉ−Ｇｅに基づく半導体デバイス - Google Patents

チャネルキャリア移動度向上のための高応力ライナーを備えたＳｉ−Ｇｅに基づく半導体デバイス Download PDF

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Publication number
JP2007536736A
JP2007536736A JP2007511390A JP2007511390A JP2007536736A JP 2007536736 A JP2007536736 A JP 2007536736A JP 2007511390 A JP2007511390 A JP 2007511390A JP 2007511390 A JP2007511390 A JP 2007511390A JP 2007536736 A JP2007536736 A JP 2007536736A
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Prior art keywords
layer
transistor
stress
liner
gate electrode
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JP2007511390A
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Japanese (ja)
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JP2007536736A5 (enExample
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サン セイ−ピン
イー． ブラウン デイビッド
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2007511390A 2004-05-05 2005-04-19 チャネルキャリア移動度向上のための高応力ライナーを備えたＳｉ−Ｇｅに基づく半導体デバイス Pending JP2007536736A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/838,330 US7053400B2 (en) 2004-05-05 2004-05-05 Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility
PCT/US2005/013239 WO2005112127A1 (en) 2004-05-05 2005-04-19 SEMICONDUCTOR DEVICE BASED ON Si-Ge WITH HIGH STRESS LINER FOR ENHANCED CHANNEL CARRIER MOBILITY

Publications (2)

Publication Number Publication Date
JP2007536736A true JP2007536736A (ja) 2007-12-13
JP2007536736A5 JP2007536736A5 (enExample) 2008-06-19

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JP2007511390A Pending JP2007536736A (ja) 2004-05-05 2005-04-19 チャネルキャリア移動度向上のための高応力ライナーを備えたＳｉ−Ｇｅに基づく半導体デバイス

Country Status (7)

Country Link
US (2) US7053400B2 (enExample)
JP (1) JP2007536736A (enExample)
CN (1) CN100533766C (enExample)
DE (1) DE112005001029B4 (enExample)
GB (1) GB2429116B (enExample)
TW (1) TWI411100B (enExample)
WO (1) WO2005112127A1 (enExample)

Cited By (11)

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JP2006165369A (ja) * 2004-12-09 2006-06-22 Fujitsu Ltd 応力蓄積絶縁膜の製造方法及び半導体装置
JP2007200961A (ja) * 2006-01-24 2007-08-09 Sharp Corp 半導体装置およびその製造方法
JP2008504677A (ja) 2004-06-24 2008-02-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 改良した歪みシリコンｃｍｏｓデバイスおよび方法
JP2008041981A (ja) * 2006-08-08 2008-02-21 Fujitsu Ltd 半導体装置の製造方法
JP2008522405A (ja) * 2004-11-16 2008-06-26 アプライド マテリアルズ インコーポレイテッド 半導体のための引張り及び圧縮応力をもたせた物質
JP2008306132A (ja) * 2007-06-11 2008-12-18 Renesas Technology Corp 半導体装置の製造方法
JP2009516363A (ja) * 2005-11-14 2009-04-16 インターナショナル・ビジネス・マシーンズ・コーポレーション スペーサレスｆｅｔ及びデュアル・ライナ法による歪み強化を増加させる構造体及び方法
JP2009522796A (ja) * 2006-01-09 2009-06-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 同じ基板上に同じ導電型の低性能及び高性能デバイスを有する半導体デバイス構造体
JP2010531537A (ja) * 2007-01-19 2010-09-24 フリースケール セミコンダクター インコーポレイテッド 半導体デバイス用の多層シリコン窒化膜を堆積する、半導体デバイスの製造方法、および半導体デバイス
JP2011129825A (ja) * 2009-12-21 2011-06-30 Renesas Electronics Corp 半導体装置、および、半導体装置の製造方法
JP4818352B2 (ja) * 2005-04-01 2011-11-16 インターナショナル・ビジネス・マシーンズ・コーポレーション 堆積ストレッサ材料の応力レベルを上昇させる方法、及び半導体構造体を形成する方法

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US7053400B2 (en) 2006-05-30
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