JP5431372B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 186
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000010410 layer Substances 0.000 claims description 395
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 44
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 24
- 229910021332 silicide Inorganic materials 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 54
- 230000008569 process Effects 0.000 description 18
- 229910005883 NiSi Inorganic materials 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000012299 nitrogen atmosphere Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 3
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- 229910052738 indium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 125000000370 germanetriyl group Chemical group [H][Ge](*)(*)* 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910004116 SrO 2 Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以下に実施形態として図面を参照して詳細に説明する。
第1実施形態による半導体装置について図4A乃至図5を参照して説明する。第1実施形態の半導体装置はMOSFETであって、このMOSFETのチャネル領域におけるゲート長方向(Lg方向)の断面図を図4Aに示し、このMOSFETのソース領域またはドレイン領域におけるゲート幅方向(Wg方向)の断面を図5に示す。図4Aは図5に示す切断線A−A切断した断面図であり、図5は図4Aに示す切断線B−Bで切断した断面図である。
次に、第1実施形態による半導体装置の製造方法の一具体例について図8(a)乃至図8(e)を参照して説明する。
次に、第2実施形態による半導体装置について図9を参照して説明する。本実施形態の半導体装置はMOSFETであって、このMOSFETの斜視図を図9に示す。
次に、第2実施形態による半導体装置の製造方法の第1具体例を図10乃至図18(b)を参照して説明する。
次に、第2実施形態による半導体装置の製造方法の第2具体例を説明する。この第2具体例の製造方法は、第1具体例の製造方法とは、以下の点で異なっている。
2 SiO2の埋込酸化層
3 ひずみSi層、ひずみ半導体層
3a シリサイド化されたひずみSi層
4 ゲート絶縁膜
5 ゲート電極(ゲート電極材料膜)
6 ゲート側壁
8 ひずみ制御層
8a シリサイド化されたひずみ制御層(NiSiGe層)
15 Ni膜
Claims (6)
- 基板と、
前記基板上に形成されひずみを有する単層の第1半導体層と、
前記第1半導体層上に離間して設けられ、前記第1半導体層と格子定数が異なる第2および第3半導体層と、
前記第2半導体層と前記第3半導体層との間のチャネルとなる前記第1半導体層上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
を備え、
前記第1半導体層と、前記第2および第3半導体層とのうちの一方がSi層であり、他方がSiGe層であり、
前記第2半導体層および前記第2半導体層直下の前記第1半導体層の外表面領域が第1シリサイドであり、前記第3半導体層および前記第3半導体層直下の前記第1半導体層の外表面領域が第2シリサイドであり、前記第1および第2シリサイドのうちGeを含むシリサイドはGeの濃度が50原子%以上である半導体装置。 - 前記第1半導体層は前記基板上にメサ状に形成されている請求項1記載の半導体装置。
- 前記第1半導体層は、そのサイズが1辺あたり1μm以下のサイズである請求項1または2記載の半導体装置。
- 前記第1半導体層と前記基板との間に絶縁層が設けられている請求項1乃至3のいずれかに記載の半導体装置。
- 基板上に単層の第1半導体層を形成する工程と、
前記第1半導体層と格子定数の異なる第2半導体層を前記第1半導体層上に形成する工程と、
前記第2半導体層および第1半導体層をパターニングするとともに、前記第2半導体層をパターニングして離間した第1および第2の半導体領域に分割する工程と、
前記第1半導体領域と前記第2半導体領域との間のチャネルとなる前記第1半導体層上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
少なくとも前記第1および第2半導体領域に不純物を導入することにより、ソースおよびドレイン領域を形成する工程と、
前記第1および第2半導体領域と、それらの領域直下の前記第1半導体層の外表面領域をシリサイド化する工程と、
を備え、
前記第1半導体層と、前記第1および第2半導体領域とのうちの一方がSiからなり、他方がSiGeからなり、Geを含むシリサイドはGeの濃度が50原子%以上である半導体装置の製造方法。 - 基板上に単層の第1半導体層を形成する工程と、
前記第1半導体層のゲート形成予定領域上に選択的に保護膜を形成する工程と、
前記保護膜が形成された領域以外の前記第1半導体層上に、第1半導体層と格子定数が異なる第2半導体層を形成する工程と、
前記保護膜および前記第2半導体層ならびに前記第1半導体層をパターニングする工程と、
少なくとも前記第2半導体層に不純物を導入することにより、ソースおよびドレイン領域を形成する工程と、
前記第2半導体層および前記第1半導体層の外表面領域をシリサイド化する工程と、
前記保護膜を除去する工程と、
前記保護膜が除去されたチャネルとなる前記第1半導体層の領域上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
を備え、
前記第1半導体層と、前記第2半導体層とのうちの一方がSi層であり、他方がSiGe層であり、Geを含むシリサイドは、Geの濃度が50原子%以上である半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2011000812A JP5431372B2 (ja) | 2011-01-05 | 2011-01-05 | 半導体装置およびその製造方法 |
US13/236,182 US8766236B2 (en) | 2011-01-05 | 2011-09-19 | Semiconductor device and method of manufacturing the same |
TW100133692A TWI441339B (zh) | 2011-01-05 | 2011-09-20 | 半導體裝置及其製造方法 |
KR1020110117356A KR101324380B1 (ko) | 2011-01-05 | 2011-11-11 | 반도체 장치 및 그 제조 방법 |
CN201110362688.4A CN102593118B (zh) | 2011-01-05 | 2011-11-16 | 半导体器件及其制造方法 |
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JP2011000812A JP5431372B2 (ja) | 2011-01-05 | 2011-01-05 | 半導体装置およびその製造方法 |
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JP2012142503A JP2012142503A (ja) | 2012-07-26 |
JP5431372B2 true JP5431372B2 (ja) | 2014-03-05 |
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US (1) | US8766236B2 (ja) |
JP (1) | JP5431372B2 (ja) |
KR (1) | KR101324380B1 (ja) |
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Cited By (1)
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US9595610B2 (en) | 2014-07-07 | 2017-03-14 | Samsung Electronics Co., Ltd. | Field effect transistor and method of fabricating the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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US9136383B2 (en) * | 2012-08-09 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure of semiconductor device |
EP2704199B1 (en) * | 2012-09-03 | 2020-01-01 | IMEC vzw | Method of manufacturing a semiconductor device |
WO2014178422A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング液およびエッチング液のキット、これを用いたエッチング方法および半導体基板製品の製造方法 |
WO2014178423A1 (ja) | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液、ならびに半導体基板製品の製造方法 |
JP6088999B2 (ja) * | 2013-05-02 | 2017-03-01 | 富士フイルム株式会社 | エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法 |
US9142474B2 (en) * | 2013-10-07 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation structure of fin field effect transistor |
US9287262B2 (en) | 2013-10-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
US20150206965A1 (en) * | 2013-11-14 | 2015-07-23 | Altera Corporation | High performance finfet |
TWI549295B (zh) * | 2014-03-22 | 2016-09-11 | 阿爾特拉公司 | 高性能鰭式場效電晶體 |
US10032912B2 (en) | 2014-12-31 | 2018-07-24 | Stmicroelectronics, Inc. | Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions |
US9548361B1 (en) | 2015-06-30 | 2017-01-17 | Stmicroelectronics, Inc. | Method of using a sacrificial gate structure to make a metal gate FinFET transistor |
US9679899B2 (en) | 2015-08-24 | 2017-06-13 | Stmicroelectronics, Inc. | Co-integration of tensile silicon and compressive silicon germanium |
US10340340B2 (en) * | 2016-10-20 | 2019-07-02 | International Business Machines Corporation | Multiple-threshold nanosheet transistors |
KR102446604B1 (ko) * | 2021-01-04 | 2022-09-26 | 한국과학기술원 | 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100332108B1 (ko) * | 1999-06-29 | 2002-04-10 | 박종섭 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
JP3825768B2 (ja) * | 2003-08-27 | 2006-09-27 | 株式会社東芝 | 電界効果トランジスタ |
US7053400B2 (en) | 2004-05-05 | 2006-05-30 | Advanced Micro Devices, Inc. | Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility |
US7172933B2 (en) | 2004-06-10 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recessed polysilicon gate structure for a strained silicon MOSFET device |
US7018901B1 (en) | 2004-09-29 | 2006-03-28 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having a strained channel and a heterojunction source/drain |
DE102006019937B4 (de) | 2006-04-28 | 2010-11-25 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines SOI-Transistors mit eingebetteter Verformungsschicht und einem reduzierten Effekt des potentialfreien Körpers |
JP5329835B2 (ja) * | 2008-04-10 | 2013-10-30 | 株式会社東芝 | 半導体装置の製造方法 |
JP4875038B2 (ja) * | 2008-09-24 | 2012-02-15 | 株式会社東芝 | 半導体装置およびその製造方法 |
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US9595610B2 (en) | 2014-07-07 | 2017-03-14 | Samsung Electronics Co., Ltd. | Field effect transistor and method of fabricating the same |
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US8766236B2 (en) | 2014-07-01 |
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