CN101632159A - 受应力的场效晶体管以及其制造方法 - Google Patents
受应力的场效晶体管以及其制造方法 Download PDFInfo
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- CN101632159A CN101632159A CN200780040230A CN200780040230A CN101632159A CN 101632159 A CN101632159 A CN 101632159A CN 200780040230 A CN200780040230 A CN 200780040230A CN 200780040230 A CN200780040230 A CN 200780040230A CN 101632159 A CN101632159 A CN 101632159A
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- germanium
- silicon
- silicon layer
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- epitaxial growth
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000005669 field effect Effects 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 77
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000012212 insulator Substances 0.000 claims abstract description 33
- 150000003376 silicon Chemical class 0.000 claims abstract description 31
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- 230000008021 deposition Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 84
- 229920001296 polysiloxane Polymers 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
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- 229910052732 germanium Inorganic materials 0.000 description 8
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- 239000007943 implant Substances 0.000 description 8
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- 229910052796 boron Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 229910000521 B alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/536,126 | 2006-09-28 | ||
US11/536,126 US7504301B2 (en) | 2006-09-28 | 2006-09-28 | Stressed field effect transistor and methods for its fabrication |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410298755.4A Division CN104051276A (zh) | 2006-09-28 | 2007-09-24 | 受应力的场效晶体管的制造方法 |
Publications (1)
Publication Number | Publication Date |
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CN101632159A true CN101632159A (zh) | 2010-01-20 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN200780040230A Pending CN101632159A (zh) | 2006-09-28 | 2007-09-24 | 受应力的场效晶体管以及其制造方法 |
CN201410298755.4A Pending CN104051276A (zh) | 2006-09-28 | 2007-09-24 | 受应力的场效晶体管的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN201410298755.4A Pending CN104051276A (zh) | 2006-09-28 | 2007-09-24 | 受应力的场效晶体管的制造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7504301B2 (zh) |
JP (1) | JP2010505267A (zh) |
KR (1) | KR101436129B1 (zh) |
CN (2) | CN101632159A (zh) |
DE (1) | DE112007002306B4 (zh) |
GB (1) | GB2455669B (zh) |
TW (1) | TWI446453B (zh) |
WO (1) | WO2008042140A1 (zh) |
Cited By (5)
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CN103594338A (zh) * | 2012-08-16 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103858238A (zh) * | 2011-10-10 | 2014-06-11 | 国际商业机器公司 | 闩锁scr的应力加强结工程 |
CN104658912A (zh) * | 2013-11-19 | 2015-05-27 | 国际商业机器公司 | 半导体结构及其形成方法 |
CN103594338B (zh) * | 2012-08-16 | 2016-11-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN106653751A (zh) * | 2015-11-04 | 2017-05-10 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
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KR100729354B1 (ko) * | 2005-12-07 | 2007-06-15 | 삼성전자주식회사 | 유전막의 전기적 특성 향상을 위한 반도체 소자의 제조방법 |
JP2007281038A (ja) * | 2006-04-03 | 2007-10-25 | Toshiba Corp | 半導体装置 |
US7504301B2 (en) * | 2006-09-28 | 2009-03-17 | Advanced Micro Devices, Inc. | Stressed field effect transistor and methods for its fabrication |
US8008157B2 (en) * | 2006-10-27 | 2011-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS device with raised source and drain regions |
US7800182B2 (en) * | 2006-11-20 | 2010-09-21 | Infineon Technologies Ag | Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same |
US8536619B2 (en) * | 2007-02-05 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained MOS device and methods for forming the same |
US8835263B2 (en) * | 2007-02-21 | 2014-09-16 | Texas Instruments Incorporated | Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGe |
US7592262B2 (en) * | 2007-03-21 | 2009-09-22 | United Microelectronics Corp. | Method for manufacturing MOS transistors utilizing a hybrid hard mask |
US20080303060A1 (en) * | 2007-06-06 | 2008-12-11 | Jin-Ping Han | Semiconductor devices and methods of manufacturing thereof |
JP4455618B2 (ja) * | 2007-06-26 | 2010-04-21 | 株式会社東芝 | 半導体装置の製造方法 |
JP5286701B2 (ja) * | 2007-06-27 | 2013-09-11 | ソニー株式会社 | 半導体装置および半導体装置の製造方法 |
JP2009152394A (ja) * | 2007-12-20 | 2009-07-09 | Toshiba Corp | 半導体装置及びその製造方法 |
US8084788B2 (en) * | 2008-10-10 | 2011-12-27 | International Business Machines Corporation | Method of forming source and drain of a field-effect-transistor and structure thereof |
DE102008063427B4 (de) * | 2008-12-31 | 2013-02-28 | Advanced Micro Devices, Inc. | Verfahren zum selektiven Herstellen eines Transistors mit einem eingebetteten verformungsinduzierenden Material mit einer graduell geformten Gestaltung |
JP5668277B2 (ja) * | 2009-06-12 | 2015-02-12 | ソニー株式会社 | 半導体装置 |
US8368127B2 (en) * | 2009-10-08 | 2013-02-05 | Globalfoundries Singapore Pte., Ltd. | Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current |
CN102339859B (zh) * | 2010-07-16 | 2013-03-20 | 中国科学院微电子研究所 | Mos晶体管及其形成方法 |
US9048129B2 (en) * | 2011-05-25 | 2015-06-02 | Globalfoundries Singapore Pte. Ltd. | Method for forming fully relaxed silicon germanium on silicon |
US8853035B2 (en) | 2011-10-05 | 2014-10-07 | International Business Machines Corporation | Tucked active region without dummy poly for performance boost and variation reduction |
US8815712B2 (en) * | 2011-12-28 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for epitaxial re-growth of semiconductor region |
US20130175640A1 (en) * | 2012-01-06 | 2013-07-11 | Globalfoundries Inc. | Stress enhanced mos transistor and methods for fabrication |
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US9184287B2 (en) * | 2013-01-14 | 2015-11-10 | Broadcom Corporation | Native PMOS device with low threshold voltage and high drive current and method of fabricating the same |
US9269761B2 (en) * | 2013-03-08 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal capacitor |
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US6723621B1 (en) * | 1997-06-30 | 2004-04-20 | International Business Machines Corporation | Abrupt delta-like doping in Si and SiGe films by UHV-CVD |
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- 2007-09-24 JP JP2009530381A patent/JP2010505267A/ja active Pending
- 2007-09-24 CN CN200780040230A patent/CN101632159A/zh active Pending
- 2007-09-24 CN CN201410298755.4A patent/CN104051276A/zh active Pending
- 2007-09-24 DE DE112007002306T patent/DE112007002306B4/de active Active
- 2007-09-24 GB GB0905416A patent/GB2455669B/en not_active Expired - Fee Related
- 2007-09-27 TW TW096135865A patent/TWI446453B/zh active
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CN103858238A (zh) * | 2011-10-10 | 2014-06-11 | 国际商业机器公司 | 闩锁scr的应力加强结工程 |
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CN103594338A (zh) * | 2012-08-16 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103594338B (zh) * | 2012-08-16 | 2016-11-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN104658912A (zh) * | 2013-11-19 | 2015-05-27 | 国际商业机器公司 | 半导体结构及其形成方法 |
CN104658912B (zh) * | 2013-11-19 | 2017-08-29 | 国际商业机器公司 | 半导体结构及其形成方法 |
CN106653751A (zh) * | 2015-11-04 | 2017-05-10 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
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US7504301B2 (en) | 2009-03-17 |
TW200824007A (en) | 2008-06-01 |
US20090130803A1 (en) | 2009-05-21 |
DE112007002306B4 (de) | 2011-09-15 |
US20080079033A1 (en) | 2008-04-03 |
GB2455669A (en) | 2009-06-24 |
GB2455669B (en) | 2010-11-03 |
JP2010505267A (ja) | 2010-02-18 |
TWI446453B (zh) | 2014-07-21 |
WO2008042140A1 (en) | 2008-04-10 |
GB0905416D0 (en) | 2009-05-13 |
CN104051276A (zh) | 2014-09-17 |
KR20090073183A (ko) | 2009-07-02 |
KR101436129B1 (ko) | 2014-09-01 |
DE112007002306T5 (de) | 2009-07-30 |
US8148214B2 (en) | 2012-04-03 |
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