JP2006060045A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006060045A JP2006060045A JP2004240846A JP2004240846A JP2006060045A JP 2006060045 A JP2006060045 A JP 2006060045A JP 2004240846 A JP2004240846 A JP 2004240846A JP 2004240846 A JP2004240846 A JP 2004240846A JP 2006060045 A JP2006060045 A JP 2006060045A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 88
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000009792 diffusion process Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 13
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 8
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 8
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 8
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims description 42
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 123
- 229910021334 nickel silicide Inorganic materials 0.000 description 45
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 45
- 229910052710 silicon Inorganic materials 0.000 description 35
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 229910021339 platinum silicide Inorganic materials 0.000 description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- 238000000034 method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910019001 CoSi Inorganic materials 0.000 description 3
- -1 Ta 2 O 5 Inorganic materials 0.000 description 3
- 229910008484 TiSi Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000009271 trench method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
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Abstract
【解決手段】 素子分離領域を有する半導体基板と、前記半導体基板に形成された拡散領域と、前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極と、前記拡散領域上に形成されたシリサイド層(3)とを具備するMISトランジスタを含む半導体装置である。前記シリサイド層は、前記半導体基板との界面にEr、Gd、Tb、Dy、Ho、Tm、Yb、Lu、およびPtからなる群から選択される少なくとも1種の金属のシリサイドからなる界面層(5)を有することを特徴とする。
【選択図】 図1
Description
前記半導体基板に形成された拡散領域、前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極、および前記拡散領域上に第1の界面層を介して形成されたシリサイド層を有するn型MISトランジスタと、
前記半導体基板に形成された拡散領域、前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極、および前記拡散領域上に第2の界面層を介して形成されたシリサイド層を有するp型MISトランジスタとを具備し、
前記n型MISトランジスタにおける前記第1の界面層は、Er、Gd、Tb、Dy、Ho、Tm、Yb、Lu、およびPtからなる群から選択される少なくとも1種の金属のシリサイドを含み、前記p型MISトランジスタにおける前記第2の界面層は、前記n型MISトランジスタにおける前記第1の界面層と同一のシリサイドを含むことを特徴とする。
図1は、本実施形態に係る半導体装置の断面図である。
図7は、本実施形態に係る半導体装置の断面図である。
図8は、本実施形態に係る半導体装置の断面図である。
図12は、本実施形態に係る半導体装置の断面図である。
図13は、本実施形態にかかる半導体装置の断面図である。
まず、p型シリコン基板に素子分離をシャロー・トレンチ法で形成し、表面を熱酸化してシリコン熱酸化膜からなるゲート絶縁膜1を形成する。その後、多結晶シリコン層をCVDにより形成して、リソグラフィーにより加工する。次に、ゲート電極とソース・ドレイン領域との絶縁のための側壁4を形成して、図14に示す構造を得る。
図17は、本実施形態に係る半導体装置の断面図である。
図18は、本実施形態に係る半導体装置の断面図である。
図19は、本実施形態に係る半導体装置の断面図である。
まず、p型シリコン基板上に、イオン注入によりp型不純物領域(p型ウェル)およびn型不純物領域(n型ウェル)を形成する。シャロー・トレンチ法により素子分離を形成し、基板表面を熱酸化してシリコン熱酸化膜からなるゲート絶縁膜1を形成する。その後、CVDにより多結晶シリコン層を堆積し、リソグラフィーによるパターニングを行なってゲート部を加工する。砒素とボロンのイオン注入により、n型およびp型MOSトランジスタのソース/ドレイン領域およびゲート電極に高不純物濃度領域を形成する。次に、ゲート電極とソース・ドレイン領域の絶縁のための側壁4を形成して、図20に示す構造を得る。
図24は、本実施形態に係る半導体装置の断面図である。
図25は、本実施形態に係る半導体装置の断面図である。
図26は、本実施形態に係る半導体装置の断面図である。
3…ニッケルシリサイド(NiSi); 4…シリコン窒化膜
5…エルビウムシリサイド(ErSi1.7)層; 6…堆積ニッケル層
7…堆積エルビウム層; 8…プラチナシリサイド(PtSi)層
9…高濃度ボロンを含む堆積シリコン層; 10…堆積プラチナ層
11…シリコン酸化膜(SiO2)層; 12…堆積銅(Cu)膜。
Claims (10)
- 素子分離領域を有する半導体基板と、
前記半導体基板に形成された拡散領域と、
前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記拡散領域上に形成されたシリサイド層とを具備し、
前記シリサイド層は、前記半導体基板との界面にEr、Gd、Tb、Dy、Ho、Tm、Yb、Lu、およびPtからなる群から選択される少なくとも1種の金属のシリサイドからなる界面層を有するMISトランジスタを含むことを特徴とする半導体装置。 - 素子分離領域を有する半導体基板と、
前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記半導体基板のソース・ドレイン領域上に形成されたコンタクト層とを具備し、
前記コンタクト層は、前記半導体基板との界面にEr、Gd、Tb、Dy、Ho、Tm、Yb、Lu、およびPtからなる群から選択される少なくとも1種の金属のシリサイドからなる界面層を有するMISトランジスタを含むことを特徴とする半導体装置。 - 前記MISトランジスタはn型であり、前記界面層はErのシリサイドであることを特徴とする請求項1または2に記載の半導体装置。
- 前記半導体基板上に形成されたp型MISトランジスタをさらに具備する相補型MISトランジスタであることを特徴とする請求項3に記載の半導体装置。
- 前記MISトランジスタはp型であり、前記界面層はPtのシリサイドであることを特徴とする請求項1または2に記載の半導体装置。
- 前記半導体基板上に形成されたn型MISトランジスタをさらに具備する相補型MISトランジスタであることを特徴とする請求項5に記載の半導体装置。
- 前記コンタクト層は、上層が金属からなることを特徴とする請求項1、2、4ないし6のいずれか1項に記載の半導体装置。
- 素子分離領域を有する半導体基板と、
前記半導体基板に形成された拡散領域、前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極、および前記拡散領域上に第1の界面層を介して形成されたシリサイド層を有するn型MISトランジスタと、
前記半導体基板に形成された拡散領域、前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極、および前記拡散領域上に第2の界面層を介して形成されたシリサイド層を有するp型MISトランジスタとを具備し、
前記n型MISトランジスタにおける前記第1の界面層は、Er、Gd、Tb、Dy、Ho、Tm、Yb、Lu、およびPtからなる群から選択される少なくとも1種の金属のシリサイドを含み、前記p型MISトランジスタにおける前記第2の界面層は、前記n型MISトランジスタにおける前記第1の界面層と同一のシリサイドを含むことを特徴とする半導体装置。 - 前記半導体基板は、SOI基板であることを特徴とする請求項8に記載の半導体装置。
- 前記n型MISトランジスタおよび前記p型MISトランジスタのいずれか一方は、前記界面層に接する前記半導体基板中に不純物を有することを特徴とする請求項8に記載の半導体装置。
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