JP2009117557A - 相補型半導体装置及びその製造方法 - Google Patents
相補型半導体装置及びその製造方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
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Abstract
【解決手段】 半導体基板30の表面部に形成された第1及び第2の半導体領域10,20と、第1の半導体領域10上に形成された、La及びAlを含む第1のゲート絶縁膜11及び第1のゲート電極12を有するn型MISトランジスタと、第2の半導体領域20上に形成された、La及びAlを含む第2のゲート絶縁膜21及び第2のゲート電極22を有するp型MISトランジスタと、を備えた相補型半導体装置であって、第2のゲート絶縁膜22における原子濃度比Al/Laが、第1のゲート絶縁膜11における原子濃度比Al/Laよりも大きい。
【選択図】 図7
Description
図7は、本発明の第1の実施形態に係わる相補型半導体装置(CMOSトランジスタ)の概略構成を示す断面図である。Si基板30上にSiO2 からなる素子分離絶縁膜31を介してp型及びn型のSi領域10,20が形成されている。なお、基板としては、SOI(Silicon On Insulator)構造の基板を用いてもよい。p型Si領域(第1の半導体領域)10上にはn型MOSトランジスタ、n型Si領域(第2の半導体領域)20上にはp型MOSトランジスタが形成されている。
図13及び図14は、本発明の第2の実施形態に係るCMOSトランジスタの製造工程を示す断面図である。
図15は、本発明の第3の実施形態に係るCMOSトランジスタの製造工程を示す断面図である。
図16は、本発明の第4の実施形態に係わるCMOSトランジスタの製造工程を示す断面図である。
図17は、本発明の第5の実施形態に係わるCMOSトランジスタの概略構成を示す斜視図である。
なお、本発明は上述した各実施形態に限定されるものではない。n型MOSトランジスタ及びp型MOSトランジスタのゲート電極材料は、TaCやWに限るものではなく、仕様に応じて適宜変更可能である。n型MOSトランジスタのゲート電極の形成材料は、p型半導体領域を形成する半導体のエネルギーギャップの中央以上で且つ伝導帯端以下の仕事関数を有するものであればよい。p型MOSトランジスタのゲート電極の形成材料は、n型半導体領域を形成する半導体のエネルギーギャップの中央以下で且つ価電子端以上の仕事関数を有するものであればよい。さらに、ゲート絶縁膜中におけるAl/La濃度比は、必ずしも実施形態に示した値に限定されるものではなく、使用するゲート電極材料に応じて適宜変更可能である。
11,84,110…ゲート絶縁膜(第1のゲート絶縁膜)
12,120…ゲート電極(第1のゲート電極)
13,23…エクステンション層
14,24…ソース/ドレイン領域
15,25,87…ゲート側壁絶縁膜
16,26…NiSi層
20…n型Si領域(第2の半導体領域)
21,85,210…ゲート絶縁膜(第2のゲート絶縁膜)
22,220…ゲート電極(第2のゲート電極)
30…Si基板(半導体基板)
31…素子分離層
32…SiO2 膜(ダミーゲート絶縁膜)
33…多結晶Si膜(ダミーゲート電極)
34…レジスト
36…相関絶縁膜
37,41,43,53,61,71…マスク材
38,42,44,51,62,72…LaAlO3 膜
46,52,73…TaC膜
63…W膜
81…埋め込み絶縁膜
82…Fin状のp型Si層(第1の半導体領域)
83…Fin状のn型Si層(第2の半導体領域)
86…共通ゲート電極
Claims (10)
- 半導体基板と、
前記半導体基板の表面部に形成された第1の半導体領域と、
前記半導体基板の表面部に形成された第2の半導体領域と、
前記第1の半導体領域上に形成された、La及びAlを含む第1のゲート絶縁膜と、該ゲート絶縁膜上に形成された第1のゲート電極とを有するn型MISトランジスタと、
前記第2の半導体領域上に形成された、La及びAlを含む第2のゲート絶縁膜と、該ゲート絶縁膜上に形成された第2のゲート電極とを有するp型MISトランジスタと、
を具備し、
前記第2のゲート絶縁膜におけるAlのLaに対する原子濃度比Al/Laが、前記第1のゲート絶縁膜におけるAlのLaに対する原子濃度比Al/Laよりも大きいことを特徴とする相補型半導体装置。 - 前記第1及び第2のゲート絶縁膜の、AlのLaに対する原子濃度比Al/Laが共に1以上であることを特徴とする請求項1に記載の相補型半導体装置。
- 前記第1の半導体領域のうち、前記第1のゲート絶縁膜との界面から10nm以内において、前記基板の表面と平行方向に格子が伸びる歪みが印加され、
前記第2の半導体領域のうち、前記第2のゲート絶縁膜との界面から10nm以内において、前記基板の表面と平行方向に格子が伸びる歪みが印加され、
前記第1の半導体領域における前記歪みの量の方が前記第2の半導体領域における前記歪みの量よりも大きいことを特徴とする請求項1又は2に記載の相補型半導体装置。 - 前記n型MISトランジスタ及び前記p型MISトランジスタの各ゲート電極が、同一の材料で形成されていることを特徴とする請求項1〜3の何れかに記載の相補型半導体装置。
- 前記第2のゲート絶縁膜におけるAl濃度は基板界面側とゲート電極界面側で異なり、基板界面におけるAl濃度の方がゲート電極界面におけるAl濃度よりも高いことを特徴とする請求項1〜4の何れかに記載の相補型半導体装置。
- 前記第1のゲート絶縁膜におけるLa濃度は基板界面側とゲート電極界面側で異なり、基板界面におけるLa濃度の方がゲート電極界面におけるLa濃度よりも高いことを特徴とする請求項1〜4の何れかに記載の相補型半導体装置。
- 前記第1のゲート電極の形成材料は、前記第1の半導体領域を形成する半導体のエネルギーギャップの中央以上で且つ伝導帯端以下の仕事関数を有し、
前記第2のゲート電極の形成材料は、前記第2の半導体領域を形成する半導体のエネルギーギャップの中央以下で且つ価電子端以上の仕事関数を有することを特徴とする請求項1に記載の相補型半導体装置。 - 前記第1及び第2のゲート絶縁膜の少なくともゲート電極側に、HfO2 ,HfSiO,HfSiON,HfAlO,HfLaOの何れかからなる絶縁層を有することを特徴とする請求項1に記載の相補型半導体装置。
- 半導体基板の表面部に、第1の半導体領域と第2の半導体領域を形成する工程と、
前記第1の半導体領域上に、La及びAlを含む第1のゲート絶縁膜を形成した後、該ゲート絶縁膜上に第1のゲート電極を形成することにより、n型MISトランジスタのゲート部を形成する工程と、
前記第2の半導体領域上に、La及びAlを含み、AlのLaに対する原子濃度比Al/Laが、前記第1のゲート絶縁膜におけるAlのLaに対する原子濃度比Al/Laよりも大きい第2のゲート絶縁膜を形成した後、該ゲート絶縁膜上に第2のゲート電極を形成することにより、p型MISトランジスタのゲート部を形成する工程と、
を含むことを特徴とする相補型半導体装置の製造方法。 - 半導体基板の表面部に、第1の半導体領域と第2の半導体領域を形成する工程と、
前記第1の半導体領域上に、La及びAlを含む第1のゲート絶縁膜を形成し、該第1のゲート絶縁膜上に第1のゲート電極を形成することにより、n型MISトランジスタのゲート部を形成し、且つ前記第2の半導体領域に前記第1のゲート絶縁膜と同じ材料の第2のゲート絶縁膜を形成し、該第2のゲート絶縁膜上に第2のゲート電極を形成することにより、p型MISトランジスタのゲート部を形成する工程と、
前記第2のゲート電極を通して前記第2のゲート絶縁膜中にAlをイオン注入、又は前記第1のゲート電極を通して前記第1のゲート絶縁膜中にLaをイオン注入することにより、前記第2のゲート絶縁膜におけるAlのLaに対する原子濃度比Al/Laを、前記第1のゲート絶縁膜におけるAlのLaに対する原子濃度比Al/Laよりも大きくする工程と、
を含むことを特徴とする相補型半導体装置の製造方法。
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