DE102012224361B4 - Pegelverschieberschaltung und integrierte Halbleiterschaltung - Google Patents

Pegelverschieberschaltung und integrierte Halbleiterschaltung Download PDF

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Publication number
DE102012224361B4
DE102012224361B4 DE102012224361.5A DE102012224361A DE102012224361B4 DE 102012224361 B4 DE102012224361 B4 DE 102012224361B4 DE 102012224361 A DE102012224361 A DE 102012224361A DE 102012224361 B4 DE102012224361 B4 DE 102012224361B4
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Germany
Prior art keywords
transistor
power supply
gate electrode
inverter circuit
supply potential
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Expired - Fee Related
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DE102012224361.5A
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German (de)
English (en)
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DE102012224361A1 (de
Inventor
Kazuaki Ohshima
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
DE102012224361.5A 2011-12-23 2012-12-24 Pegelverschieberschaltung und integrierte Halbleiterschaltung Expired - Fee Related DE102012224361B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011282510 2011-12-23
JP2011-282510 2011-12-23

Publications (2)

Publication Number Publication Date
DE102012224361A1 DE102012224361A1 (de) 2013-06-27
DE102012224361B4 true DE102012224361B4 (de) 2022-02-24

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DE102012224361.5A Expired - Fee Related DE102012224361B4 (de) 2011-12-23 2012-12-24 Pegelverschieberschaltung und integrierte Halbleiterschaltung

Country Status (6)

Country Link
US (1) US8861288B2 (enExample)
JP (1) JP6306282B2 (enExample)
KR (1) KR102022837B1 (enExample)
CN (1) CN103178826B (enExample)
DE (1) DE102012224361B4 (enExample)
TW (1) TWI580189B (enExample)

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US20130285049A1 (en) * 2012-04-27 2013-10-31 Semiconductor Energy Laboratory Co., Ltd. Standard cell and semiconductor integrated circuit
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
WO2015136413A1 (en) * 2014-03-12 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6325953B2 (ja) * 2014-09-16 2018-05-16 株式会社東芝 半導体装置の製造方法
KR102315333B1 (ko) 2015-02-04 2021-10-19 삼성전자주식회사 회로 디자인 시스템 및 이를 이용한 반도체 회로
CN107818987B (zh) * 2016-09-14 2024-01-16 天马微电子股份有限公司 半导体装置及其制造方法和显示设备及其制造方法
CN107818986B (zh) * 2016-09-14 2025-02-25 天马微电子股份有限公司 半导体装置及其制造方法和显示设备及其制造方法
JP7055285B2 (ja) * 2016-09-14 2022-04-18 天馬微電子有限公司 半導体装置、表示装置、半導体装置の製造方法及び表示装置の製造方法
US10355673B2 (en) 2016-09-29 2019-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10504563B1 (en) * 2018-06-06 2019-12-10 Micron Technology, Inc. Methods and apparatuses of driver circuits without voltage level shifters
WO2020104885A1 (ja) * 2018-11-22 2020-05-28 株式会社半導体エネルギー研究所 二次電池の異常検知装置、および、半導体装置
JP7486360B2 (ja) * 2020-06-30 2024-05-17 日清紡マイクロデバイス株式会社 レベルシフト回路

Citations (2)

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CN103178826A (zh) 2013-06-26
KR20130073825A (ko) 2013-07-03
TW201338424A (zh) 2013-09-16
US8861288B2 (en) 2014-10-14
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