CN1875429A - 具有依赖邻近工作模式位线补偿的非易失性存储器及方法 - Google Patents
具有依赖邻近工作模式位线补偿的非易失性存储器及方法 Download PDFInfo
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- CN1875429A CN1875429A CNA2004800320485A CN200480032048A CN1875429A CN 1875429 A CN1875429 A CN 1875429A CN A2004800320485 A CNA2004800320485 A CN A2004800320485A CN 200480032048 A CN200480032048 A CN 200480032048A CN 1875429 A CN1875429 A CN 1875429A
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Stored Programmes (AREA)
- Circuits Of Receivers In General (AREA)
- Credit Cards Or The Like (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/667,223 US6956770B2 (en) | 2003-09-17 | 2003-09-17 | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
US10/667,223 | 2003-09-17 | ||
PCT/US2004/030420 WO2005029503A1 (en) | 2003-09-17 | 2004-09-16 | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1875429A true CN1875429A (zh) | 2006-12-06 |
CN1875429B CN1875429B (zh) | 2011-09-14 |
Family
ID=34274758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800320485A Expired - Fee Related CN1875429B (zh) | 2003-09-17 | 2004-09-16 | 具有依赖邻近工作模式位线补偿的非易失性存储器及方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6956770B2 (zh) |
EP (1) | EP1665284B1 (zh) |
JP (1) | JP4880464B2 (zh) |
KR (1) | KR101109458B1 (zh) |
CN (1) | CN1875429B (zh) |
AT (1) | ATE387716T1 (zh) |
DE (1) | DE602004012122T2 (zh) |
TW (1) | TWI251238B (zh) |
WO (1) | WO2005029503A1 (zh) |
Cited By (6)
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CN101458954B (zh) * | 2007-09-06 | 2013-11-06 | 三星电子株式会社 | 多位数据存储系统和读取方法 |
CN104103314A (zh) * | 2006-11-30 | 2014-10-15 | 考文森智财管理公司 | 闪存存储器编程禁止方案 |
CN101711415B (zh) * | 2007-06-07 | 2014-10-22 | 桑迪士克科技股份有限公司 | 具有位线封锁控制的非易失存储器和用于改进的感测的方法 |
CN105027217A (zh) * | 2012-10-24 | 2015-11-04 | 桑迪士克技术有限公司 | 使用栅极感应漏极泄漏在对3rd存储器编程期间进行预充电 |
CN105321569A (zh) * | 2014-07-25 | 2016-02-10 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN110223724A (zh) * | 2019-05-10 | 2019-09-10 | 北京兆易创新科技股份有限公司 | 一种nand flash的读操作方法和装置 |
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US7196931B2 (en) * | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
US7443757B2 (en) * | 2002-09-24 | 2008-10-28 | Sandisk Corporation | Non-volatile memory and method with reduced bit line crosstalk errors |
US7327619B2 (en) * | 2002-09-24 | 2008-02-05 | Sandisk Corporation | Reference sense amplifier for non-volatile memory |
US7064980B2 (en) * | 2003-09-17 | 2006-06-20 | Sandisk Corporation | Non-volatile memory and method with bit line coupled compensation |
US6956770B2 (en) * | 2003-09-17 | 2005-10-18 | Sandisk Corporation | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
US7068556B2 (en) * | 2004-03-09 | 2006-06-27 | Lattice Semiconductor Corporation | Sense amplifier systems and methods |
US7020026B2 (en) * | 2004-05-05 | 2006-03-28 | Sandisk Corporation | Bitline governed approach for program control of non-volatile memory |
US7023733B2 (en) * | 2004-05-05 | 2006-04-04 | Sandisk Corporation | Boosting to control programming of non-volatile memory |
US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7196928B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
US7196946B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling in non-volatile storage |
US7295478B2 (en) * | 2005-05-12 | 2007-11-13 | Sandisk Corporation | Selective application of program inhibit schemes in non-volatile memory |
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US7349260B2 (en) * | 2005-12-29 | 2008-03-25 | Sandisk Corporation | Alternate row-based reading and writing for non-volatile memory |
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CN110223724A (zh) * | 2019-05-10 | 2019-09-10 | 北京兆易创新科技股份有限公司 | 一种nand flash的读操作方法和装置 |
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US20060034121A1 (en) | 2006-02-16 |
US7215574B2 (en) | 2007-05-08 |
EP1665284A1 (en) | 2006-06-07 |
TWI251238B (en) | 2006-03-11 |
CN1875429B (zh) | 2011-09-14 |
US20050057967A1 (en) | 2005-03-17 |
DE602004012122D1 (de) | 2008-04-10 |
TW200529238A (en) | 2005-09-01 |
KR101109458B1 (ko) | 2012-01-31 |
US6956770B2 (en) | 2005-10-18 |
WO2005029503A1 (en) | 2005-03-31 |
JP4880464B2 (ja) | 2012-02-22 |
EP1665284B1 (en) | 2008-02-27 |
DE602004012122T2 (de) | 2009-02-26 |
ATE387716T1 (de) | 2008-03-15 |
JP2007506222A (ja) | 2007-03-15 |
KR20060115992A (ko) | 2006-11-13 |
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