CN1701384A - 具有内部串行总线的高度紧凑的非易失性存储器及其方法 - Google Patents
具有内部串行总线的高度紧凑的非易失性存储器及其方法 Download PDFInfo
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- CN1701384A CN1701384A CN03825098.5A CN03825098A CN1701384A CN 1701384 A CN1701384 A CN 1701384A CN 03825098 A CN03825098 A CN 03825098A CN 1701384 A CN1701384 A CN 1701384A
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1036—Read-write modes for single port memories, i.e. having either a random port or a serial port using data shift registers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,919 US6891753B2 (en) | 2002-09-24 | 2002-09-24 | Highly compact non-volatile memory and method therefor with internal serial buses |
US10/254,919 | 2002-09-24 | ||
PCT/US2003/029182 WO2004029978A1 (en) | 2002-09-24 | 2003-09-18 | Highly compact non-volatile memory and method therefor with internal serial buses |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1701384A true CN1701384A (zh) | 2005-11-23 |
CN1701384B CN1701384B (zh) | 2012-10-10 |
Family
ID=31993410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03825098.5A Expired - Lifetime CN1701384B (zh) | 2002-09-24 | 2003-09-18 | 具有内部串行总线的高度紧凑的非易失性存储器及其方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6891753B2 (zh) |
EP (1) | EP1543522A1 (zh) |
JP (1) | JP4833550B2 (zh) |
KR (1) | KR101174306B1 (zh) |
CN (1) | CN1701384B (zh) |
AU (1) | AU2003267257A1 (zh) |
TW (1) | TWI315874B (zh) |
WO (1) | WO2004029978A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011109970A1 (zh) * | 2010-03-10 | 2011-09-15 | 上海海尔集成电路有限公司 | 数据堆栈存储电路及微控制器 |
CN105122227A (zh) * | 2013-05-29 | 2015-12-02 | 桑迪士克科技股份有限公司 | 用于nand存储器系统的高性能系统拓补 |
CN109390018A (zh) * | 2017-08-14 | 2019-02-26 | 东芝存储器株式会社 | 半导体存储装置 |
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- 2003-09-18 AU AU2003267257A patent/AU2003267257A1/en not_active Abandoned
- 2003-09-18 KR KR1020057005121A patent/KR101174306B1/ko active IP Right Grant
- 2003-09-18 EP EP03749728A patent/EP1543522A1/en not_active Ceased
- 2003-09-18 CN CN03825098.5A patent/CN1701384B/zh not_active Expired - Lifetime
- 2003-09-18 WO PCT/US2003/029182 patent/WO2004029978A1/en active Application Filing
- 2003-09-22 TW TW092126113A patent/TWI315874B/zh not_active IP Right Cessation
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2005
- 2005-05-05 US US11/122,738 patent/US7085159B2/en not_active Expired - Lifetime
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2006
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011109970A1 (zh) * | 2010-03-10 | 2011-09-15 | 上海海尔集成电路有限公司 | 数据堆栈存储电路及微控制器 |
CN102193868A (zh) * | 2010-03-10 | 2011-09-21 | 上海海尔集成电路有限公司 | 数据堆栈存储电路及微控制器 |
CN102193868B (zh) * | 2010-03-10 | 2013-06-19 | 上海海尔集成电路有限公司 | 数据堆栈存储电路及微控制器 |
CN105122227A (zh) * | 2013-05-29 | 2015-12-02 | 桑迪士克科技股份有限公司 | 用于nand存储器系统的高性能系统拓补 |
CN105122227B (zh) * | 2013-05-29 | 2018-10-23 | 桑迪士克科技有限责任公司 | 用于nand存储器系统的高性能系统拓补 |
CN109390018A (zh) * | 2017-08-14 | 2019-02-26 | 东芝存储器株式会社 | 半导体存储装置 |
CN109390018B (zh) * | 2017-08-14 | 2022-10-28 | 铠侠股份有限公司 | 半导体存储装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2006500731A (ja) | 2006-01-05 |
WO2004029978A1 (en) | 2004-04-08 |
TWI315874B (en) | 2009-10-11 |
US7447070B2 (en) | 2008-11-04 |
CN1701384B (zh) | 2012-10-10 |
US6891753B2 (en) | 2005-05-10 |
TW200409128A (en) | 2004-06-01 |
EP1543522A1 (en) | 2005-06-22 |
KR101174306B1 (ko) | 2012-08-16 |
JP4833550B2 (ja) | 2011-12-07 |
US20060220101A1 (en) | 2006-10-05 |
US7085159B2 (en) | 2006-08-01 |
AU2003267257A1 (en) | 2004-04-19 |
KR20050084588A (ko) | 2005-08-26 |
US20050207213A1 (en) | 2005-09-22 |
US20040057283A1 (en) | 2004-03-25 |
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