CN1698132A - 具有空间有效的数据寄存器的高度紧凑非易失性存储器及其方法 - Google Patents
具有空间有效的数据寄存器的高度紧凑非易失性存储器及其方法 Download PDFInfo
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- CN1698132A CN1698132A CNA038247712A CN03824771A CN1698132A CN 1698132 A CN1698132 A CN 1698132A CN A038247712 A CNA038247712 A CN A038247712A CN 03824771 A CN03824771 A CN 03824771A CN 1698132 A CN1698132 A CN 1698132A
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1036—Read-write modes for single port memories, i.e. having either a random port or a serial port using data shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (38)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,221 US6940753B2 (en) | 2002-09-24 | 2002-09-24 | Highly compact non-volatile memory and method therefor with space-efficient data registers |
US10/254,221 | 2002-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1698132A true CN1698132A (zh) | 2005-11-16 |
CN100490000C CN100490000C (zh) | 2009-05-20 |
Family
ID=31993300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038247712A Expired - Fee Related CN100490000C (zh) | 2002-09-24 | 2003-09-17 | 具有紧凑数据寄存器的非易失性存储器存储及读取方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6940753B2 (zh) |
EP (1) | EP1543523B1 (zh) |
JP (1) | JP4336652B2 (zh) |
KR (1) | KR101030681B1 (zh) |
CN (1) | CN100490000C (zh) |
AT (1) | ATE339007T1 (zh) |
AU (1) | AU2003272467A1 (zh) |
DE (1) | DE60308202T2 (zh) |
TW (1) | TWI310190B (zh) |
WO (1) | WO2004029977A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937703A (zh) * | 2009-06-26 | 2011-01-05 | 英特尔公司 | 用于具有新型位单元实施的寄存器堆的装置 |
CN104485930A (zh) * | 2014-12-23 | 2015-04-01 | 苏州宽温电子科技有限公司 | 一种高效时钟输入控制电路 |
CN105122227A (zh) * | 2013-05-29 | 2015-12-02 | 桑迪士克科技股份有限公司 | 用于nand存储器系统的高性能系统拓补 |
CN113228174A (zh) * | 2018-12-21 | 2021-08-06 | 美光科技公司 | 与存储器装置相关联的读取广播操作 |
Families Citing this family (24)
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US7092708B2 (en) * | 2002-12-12 | 2006-08-15 | Atc Technologies, Llc | Systems and methods for increasing capacity and/or quality of service of terrestrial cellular and satellite systems using terrestrial reception of satellite band frequencies |
KR100546331B1 (ko) * | 2003-06-03 | 2006-01-26 | 삼성전자주식회사 | 스택 뱅크들 마다 독립적으로 동작하는 멀티 포트 메모리장치 |
US7490283B2 (en) | 2004-05-13 | 2009-02-10 | Sandisk Corporation | Pipelined data relocation and improved chip architectures |
US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
US7420847B2 (en) * | 2004-12-14 | 2008-09-02 | Sandisk Corporation | Multi-state memory having data recovery after program fail |
US7158421B2 (en) * | 2005-04-01 | 2007-01-02 | Sandisk Corporation | Use of data latches in multi-phase programming of non-volatile memories |
US7849381B2 (en) | 2004-12-21 | 2010-12-07 | Sandisk Corporation | Method for copying data in reprogrammable non-volatile memory |
US7447078B2 (en) * | 2005-04-01 | 2008-11-04 | Sandisk Corporation | Method for non-volatile memory with background data latch caching during read operations |
US7463521B2 (en) | 2005-04-01 | 2008-12-09 | Sandisk Corporation | Method for non-volatile memory with managed execution of cached data |
US7206230B2 (en) | 2005-04-01 | 2007-04-17 | Sandisk Corporation | Use of data latches in cache operations of non-volatile memories |
US7307887B2 (en) * | 2005-12-29 | 2007-12-11 | Sandisk Corporation | Continued verification in non-volatile memory write operations |
US7352629B2 (en) * | 2005-12-29 | 2008-04-01 | Sandisk Corporation | Systems for continued verification in non-volatile memory write operations |
US7616506B2 (en) * | 2006-12-28 | 2009-11-10 | Sandisk Corporation | Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
US7616505B2 (en) * | 2006-12-28 | 2009-11-10 | Sandisk Corporation | Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
US8266481B2 (en) * | 2009-07-29 | 2012-09-11 | Stec, Inc. | System and method of wear-leveling in flash storage |
US8453021B2 (en) | 2009-07-29 | 2013-05-28 | Stec, Inc. | Wear leveling in solid-state device |
JP2013009285A (ja) | 2010-08-26 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 信号処理回路及びその駆動方法 |
US8472280B2 (en) | 2010-12-21 | 2013-06-25 | Sandisk Technologies Inc. | Alternate page by page programming scheme |
DE102014218131A1 (de) | 2014-09-10 | 2016-03-10 | Bayerische Motoren Werke Aktiengesellschaft | Messsystem zur Batteriezustandsbestimmung |
US10254967B2 (en) | 2016-01-13 | 2019-04-09 | Sandisk Technologies Llc | Data path control for non-volatile memory |
US10528267B2 (en) | 2016-11-11 | 2020-01-07 | Sandisk Technologies Llc | Command queue for storage operations |
US10528286B2 (en) | 2016-11-11 | 2020-01-07 | Sandisk Technologies Llc | Interface for non-volatile memory |
US10528255B2 (en) | 2016-11-11 | 2020-01-07 | Sandisk Technologies Llc | Interface for non-volatile memory |
US10114589B2 (en) * | 2016-11-16 | 2018-10-30 | Sandisk Technologies Llc | Command control for multi-core non-volatile memory |
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IT1224062B (it) | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile |
JPS6143015A (ja) | 1984-08-07 | 1986-03-01 | Toshiba Corp | デ−タ遅延記憶回路 |
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US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
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-
2002
- 2002-09-24 US US10/254,221 patent/US6940753B2/en not_active Expired - Lifetime
-
2003
- 2003-09-17 WO PCT/US2003/029141 patent/WO2004029977A1/en active IP Right Grant
- 2003-09-17 EP EP03754648A patent/EP1543523B1/en not_active Expired - Lifetime
- 2003-09-17 CN CNB038247712A patent/CN100490000C/zh not_active Expired - Fee Related
- 2003-09-17 JP JP2004540091A patent/JP4336652B2/ja not_active Expired - Fee Related
- 2003-09-17 KR KR1020057005116A patent/KR101030681B1/ko not_active IP Right Cessation
- 2003-09-17 AT AT03754648T patent/ATE339007T1/de not_active IP Right Cessation
- 2003-09-17 DE DE60308202T patent/DE60308202T2/de not_active Expired - Lifetime
- 2003-09-17 AU AU2003272467A patent/AU2003272467A1/en not_active Abandoned
- 2003-09-22 TW TW092126110A patent/TWI310190B/zh not_active IP Right Cessation
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937703A (zh) * | 2009-06-26 | 2011-01-05 | 英特尔公司 | 用于具有新型位单元实施的寄存器堆的装置 |
CN101937703B (zh) * | 2009-06-26 | 2013-12-11 | 英特尔公司 | 用于具有新型位单元实施的寄存器堆的装置 |
CN105122227A (zh) * | 2013-05-29 | 2015-12-02 | 桑迪士克科技股份有限公司 | 用于nand存储器系统的高性能系统拓补 |
CN105122227B (zh) * | 2013-05-29 | 2018-10-23 | 桑迪士克科技有限责任公司 | 用于nand存储器系统的高性能系统拓补 |
CN104485930A (zh) * | 2014-12-23 | 2015-04-01 | 苏州宽温电子科技有限公司 | 一种高效时钟输入控制电路 |
CN104485930B (zh) * | 2014-12-23 | 2017-06-16 | 苏州宽温电子科技有限公司 | 一种高效时钟输入控制电路 |
US11360704B2 (en) | 2018-12-21 | 2022-06-14 | Micron Technology, Inc. | Multiplexed signal development in a memory device |
US11340833B2 (en) | 2018-12-21 | 2022-05-24 | Micron Technology, Inc. | Systems and methods for data relocation using a signal development cache |
CN113228174A (zh) * | 2018-12-21 | 2021-08-06 | 美光科技公司 | 与存储器装置相关联的读取广播操作 |
US11372595B2 (en) | 2018-12-21 | 2022-06-28 | Micron Technology, Inc. | Read broadcast operations associated with a memory device |
US11520529B2 (en) | 2018-12-21 | 2022-12-06 | Micron Technology, Inc. | Signal development caching in a memory device |
US11656801B2 (en) | 2018-12-21 | 2023-05-23 | Micron Technology, Inc. | Systems and methods for data relocation using a signal development cache |
US11669278B2 (en) | 2018-12-21 | 2023-06-06 | Micron Technology, Inc. | Page policies for signal development caching in a memory device |
US11693599B2 (en) | 2018-12-21 | 2023-07-04 | Micron Technology, Inc. | Domain-based access in a memory device |
US11709634B2 (en) | 2018-12-21 | 2023-07-25 | Micron Technology, Inc. | Multiplexed signal development in a memory device |
US11726714B2 (en) | 2018-12-21 | 2023-08-15 | Micron Technology, Inc. | Content-addressable memory for signal development caching in a memory device |
US11934703B2 (en) | 2018-12-21 | 2024-03-19 | Micron Technology, Inc. | Read broadcast operations associated with a memory device |
US11989450B2 (en) | 2018-12-21 | 2024-05-21 | Micron Technology, Inc. | Signal development caching in a memory device |
Also Published As
Publication number | Publication date |
---|---|
EP1543523A1 (en) | 2005-06-22 |
US20040057282A1 (en) | 2004-03-25 |
CN100490000C (zh) | 2009-05-20 |
ATE339007T1 (de) | 2006-09-15 |
JP2006500730A (ja) | 2006-01-05 |
KR20050084585A (ko) | 2005-08-26 |
WO2004029977A1 (en) | 2004-04-08 |
EP1543523B1 (en) | 2006-09-06 |
US6940753B2 (en) | 2005-09-06 |
TW200409125A (en) | 2004-06-01 |
DE60308202T2 (de) | 2007-06-14 |
KR101030681B1 (ko) | 2011-04-22 |
TWI310190B (en) | 2009-05-21 |
DE60308202D1 (de) | 2006-10-19 |
JP4336652B2 (ja) | 2009-09-30 |
AU2003272467A1 (en) | 2004-04-19 |
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