ATE387716T1 - Nichtflüchtiger speicher und verfahren mit von benachbarten betriebsarten abhängiger bitleitungskompensation - Google Patents

Nichtflüchtiger speicher und verfahren mit von benachbarten betriebsarten abhängiger bitleitungskompensation

Info

Publication number
ATE387716T1
ATE387716T1 AT04784312T AT04784312T ATE387716T1 AT E387716 T1 ATE387716 T1 AT E387716T1 AT 04784312 T AT04784312 T AT 04784312T AT 04784312 T AT04784312 T AT 04784312T AT E387716 T1 ATE387716 T1 AT E387716T1
Authority
AT
Austria
Prior art keywords
programming
memory storage
storage unit
perturbation
offset
Prior art date
Application number
AT04784312T
Other languages
English (en)
Inventor
Shahzad Khalid
Yan Li
Raul-Adrian Cernea
Mehrdad Mofidi
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE387716T1 publication Critical patent/ATE387716T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Stored Programmes (AREA)
  • Circuits Of Receivers In General (AREA)
  • Credit Cards Or The Like (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT04784312T 2003-09-17 2004-09-16 Nichtflüchtiger speicher und verfahren mit von benachbarten betriebsarten abhängiger bitleitungskompensation ATE387716T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/667,223 US6956770B2 (en) 2003-09-17 2003-09-17 Non-volatile memory and method with bit line compensation dependent on neighboring operating modes

Publications (1)

Publication Number Publication Date
ATE387716T1 true ATE387716T1 (de) 2008-03-15

Family

ID=34274758

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04784312T ATE387716T1 (de) 2003-09-17 2004-09-16 Nichtflüchtiger speicher und verfahren mit von benachbarten betriebsarten abhängiger bitleitungskompensation

Country Status (9)

Country Link
US (2) US6956770B2 (de)
EP (1) EP1665284B1 (de)
JP (1) JP4880464B2 (de)
KR (1) KR101109458B1 (de)
CN (1) CN1875429B (de)
AT (1) ATE387716T1 (de)
DE (1) DE602004012122T2 (de)
TW (1) TWI251238B (de)
WO (1) WO2005029503A1 (de)

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