CN1534768A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1534768A CN1534768A CNA2004100319070A CN200410031907A CN1534768A CN 1534768 A CN1534768 A CN 1534768A CN A2004100319070 A CNA2004100319070 A CN A2004100319070A CN 200410031907 A CN200410031907 A CN 200410031907A CN 1534768 A CN1534768 A CN 1534768A
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- CN
- China
- Prior art keywords
- gate electrode
- field
- effect transistor
- semiconductor device
- memory
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H7/00—Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
- B23H7/02—Wire-cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H11/00—Auxiliary apparatus or details, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q11/00—Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling work; Safety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
- B23Q11/0003—Arrangements for preventing undesired thermal effects on tools or parts of the machine
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q11/00—Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling work; Safety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
- B23Q11/12—Arrangements for cooling or lubricating parts of the machine
- B23Q11/126—Arrangements for cooling or lubricating parts of the machine for cooling only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (45)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP094517/2003 | 2003-03-31 | ||
JP2003094517A JP2004303918A (ja) | 2003-03-31 | 2003-03-31 | 半導体装置の製造方法および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1534768A true CN1534768A (zh) | 2004-10-06 |
CN100447988C CN100447988C (zh) | 2008-12-31 |
Family
ID=32985429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100319070A Expired - Lifetime CN100447988C (zh) | 2003-03-31 | 2004-03-31 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7087955B2 (zh) |
JP (1) | JP2004303918A (zh) |
KR (1) | KR101026288B1 (zh) |
CN (1) | CN100447988C (zh) |
TW (1) | TW200501428A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8264028B2 (en) | 2005-01-03 | 2012-09-11 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
CN103380489A (zh) * | 2010-12-20 | 2013-10-30 | 斯班逊有限公司 | 电荷捕捉场效晶体管中的制程界限工程 |
CN110707092A (zh) * | 2018-07-09 | 2020-01-17 | 联华电子股份有限公司 | 半导体存储器元件及其制作方法 |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4593159B2 (ja) * | 2003-05-28 | 2010-12-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7586137B2 (en) * | 2004-08-09 | 2009-09-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device and method of fabricating the same |
DE102005051492B4 (de) * | 2004-10-21 | 2008-02-28 | Samsung Electronics Co., Ltd., Suwon | Nichtflüchtiges Speicherbauelement mit Ladungseinfangstruktur und Herstellungsverfahren |
US20060113586A1 (en) * | 2004-11-29 | 2006-06-01 | Macronix International Co., Ltd. | Charge trapping dielectric structure for non-volatile memory |
JP2006179736A (ja) * | 2004-12-24 | 2006-07-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP5014591B2 (ja) * | 2005-05-24 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US20070108495A1 (en) * | 2005-11-17 | 2007-05-17 | Macronix International Co., Ltd. | MNOS memory devices and methods for operating an MNOS memory devices |
US20070158734A1 (en) * | 2006-01-09 | 2007-07-12 | Freescale Semiconductor, Inc. | Electronic device with a multi-gated electrode structure and a process for forming the electronic device |
US7391659B2 (en) * | 2006-01-27 | 2008-06-24 | Freescale Semiconductor, Inc. | Method for multiple step programming a memory cell |
US7317222B2 (en) * | 2006-01-27 | 2008-01-08 | Freescale Semiconductor, Inc. | Memory cell using a dielectric having non-uniform thickness |
KR100824401B1 (ko) * | 2006-03-07 | 2008-04-22 | 삼성전자주식회사 | 낸드 플래시 메모리의 셀 어레이 구조 |
TWI431726B (zh) * | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
KR100807221B1 (ko) * | 2006-08-22 | 2008-02-28 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그 제조 방법 |
JP4965948B2 (ja) | 2006-09-21 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2008059768A1 (fr) * | 2006-11-14 | 2008-05-22 | Nec Corporation | Dispositif à semi-conducteur |
JP5086626B2 (ja) * | 2006-12-15 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
US8410543B2 (en) | 2007-02-01 | 2013-04-02 | Renesas Electronics Corporation | Semiconductor storage device and manufacturing method thereof |
JP5161494B2 (ja) * | 2007-02-01 | 2013-03-13 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP4316627B2 (ja) * | 2007-03-07 | 2009-08-19 | 三井金属鉱業株式会社 | フレキシブル配線基材並びに半導体装置及びその製造方法 |
KR100846393B1 (ko) * | 2007-03-30 | 2008-07-15 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
JP2008270343A (ja) * | 2007-04-17 | 2008-11-06 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7968934B2 (en) * | 2007-07-11 | 2011-06-28 | Infineon Technologies Ag | Memory device including a gate control layer |
JP5212770B2 (ja) * | 2007-07-13 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
US20090101961A1 (en) * | 2007-10-22 | 2009-04-23 | Yue-Song He | Memory devices with split gate and blocking layer |
US8178406B2 (en) * | 2007-10-29 | 2012-05-15 | Freescale Semiconductor, Inc. | Split gate device and method for forming |
JP2009272365A (ja) * | 2008-05-01 | 2009-11-19 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2009302269A (ja) * | 2008-06-13 | 2009-12-24 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010067645A (ja) * | 2008-09-08 | 2010-03-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5519154B2 (ja) * | 2009-01-09 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2010082328A1 (ja) | 2009-01-15 | 2010-07-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5638679B2 (ja) * | 2009-01-15 | 2014-12-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2010183022A (ja) | 2009-02-09 | 2010-08-19 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5538838B2 (ja) * | 2009-11-25 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5592214B2 (ja) * | 2010-09-22 | 2014-09-17 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2012114269A (ja) | 2010-11-25 | 2012-06-14 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
JP5734744B2 (ja) * | 2011-05-27 | 2015-06-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5985293B2 (ja) * | 2011-10-04 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
US9087913B2 (en) * | 2012-04-09 | 2015-07-21 | Freescale Semiconductor, Inc. | Integration technique using thermal oxide select gate dielectric for select gate and apartial replacement gate for logic |
US20140167141A1 (en) | 2012-12-14 | 2014-06-19 | Spansion Llc | Charge Trapping Split Gate Embedded Flash Memory and Associated Methods |
JP2013077841A (ja) * | 2013-01-16 | 2013-04-25 | Renesas Electronics Corp | 半導体装置 |
JP6029989B2 (ja) * | 2013-01-25 | 2016-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8772108B1 (en) * | 2013-02-25 | 2014-07-08 | Globalfoundries Singapore Pte. Ltd. | Multi-time programmable non-volatile memory |
US9082837B2 (en) | 2013-08-08 | 2015-07-14 | Freescale Semiconductor, Inc. | Nonvolatile memory bitcell with inlaid high k metal select gate |
US9331160B2 (en) * | 2013-08-20 | 2016-05-03 | Freescale Semiconductor, Inc. | Split-gate non-volatile memory cells having gap protection zones |
US9082650B2 (en) | 2013-08-21 | 2015-07-14 | Freescale Semiconductor, Inc. | Integrated split gate non-volatile memory cell and logic structure |
US9252246B2 (en) | 2013-08-21 | 2016-02-02 | Freescale Semiconductor, Inc. | Integrated split gate non-volatile memory cell and logic device |
US9275864B2 (en) | 2013-08-22 | 2016-03-01 | Freescale Semiconductor,Inc. | Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates |
JP2014160846A (ja) * | 2014-04-10 | 2014-09-04 | Renesas Electronics Corp | 半導体記憶装置 |
US9343314B2 (en) | 2014-05-30 | 2016-05-17 | Freescale Semiconductor, Inc. | Split gate nanocrystal memory integration |
KR101552921B1 (ko) | 2014-09-29 | 2015-09-15 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
JP6440507B2 (ja) * | 2015-01-27 | 2018-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN106716637A (zh) * | 2015-03-30 | 2017-05-24 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
US9379128B1 (en) * | 2015-07-27 | 2016-06-28 | United Microelectronics Corp. | Split gate non-volatile memory device and method for fabricating the same |
KR20170002316U (ko) | 2015-12-18 | 2017-06-29 | 한전케이피에스 주식회사 | 전기집진기 방전극 와이어 절단장치 |
US10872898B2 (en) * | 2017-07-19 | 2020-12-22 | Cypress Semiconductor Corporation | Embedded non-volatile memory device and fabrication method of the same |
US20220309328A1 (en) * | 2021-03-29 | 2022-09-29 | Infineon Technologies LLC | Compute-in-memory devices, systems and methods of operation thereof |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577162A (en) * | 1980-06-17 | 1982-01-14 | Toshiba Corp | Nonvolatile semiconductor memory and manufacture therefor |
JP2844475B2 (ja) * | 1989-07-21 | 1999-01-06 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリ |
JP2950557B2 (ja) * | 1989-10-24 | 1999-09-20 | シチズン時計株式会社 | 半導体装置およびその製造方法 |
JPH0424969A (ja) * | 1990-05-15 | 1992-01-28 | Toshiba Corp | 半導体記憶装置 |
JP3065164B2 (ja) | 1992-03-18 | 2000-07-12 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP3436315B2 (ja) * | 1992-03-31 | 2003-08-11 | 川崎マイクロエレクトロニクス株式会社 | Monos型半導体不揮発性記憶装置の製造方法及び、半導体装置の製造方法 |
JPH0685251A (ja) | 1992-09-01 | 1994-03-25 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH06125094A (ja) | 1992-10-09 | 1994-05-06 | Rohm Co Ltd | 不揮発性記憶素子およびこの素子の製造方法ならびにこの素子を利用した不揮発性記憶装置およびその駆動方法 |
JPH0730103A (ja) * | 1993-07-07 | 1995-01-31 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP2994927B2 (ja) * | 1993-11-24 | 1999-12-27 | 三洋電機株式会社 | 不揮発性半導体記憶装置の製造方法 |
JPH07169864A (ja) * | 1993-12-16 | 1995-07-04 | Kawasaki Steel Corp | 不揮発性半導体記憶装置 |
KR0172273B1 (ko) * | 1995-06-24 | 1999-02-01 | 김주용 | 플래쉬 메모리 셀의 제조방법 |
US5838041A (en) | 1995-10-02 | 1998-11-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having memory cell transistor provided with offset region acting as a charge carrier injecting region |
JP3447179B2 (ja) * | 1996-07-17 | 2003-09-16 | 株式会社リコー | 不揮発性半導体メモリ装置とその製造方法 |
US5969383A (en) | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
JP3909941B2 (ja) * | 1997-06-27 | 2007-04-25 | 株式会社リコー | 不揮発性半導体記憶装置及びその製造方法 |
IT1294312B1 (it) * | 1997-08-07 | 1999-03-24 | Sgs Thomson Microelectronics | Processo per la fabbricazione di un dispositivo di memoria non volatile programmabile elettricamente |
US5872034A (en) * | 1997-11-03 | 1999-02-16 | Delco Electronics Corporation | EPROM in double poly high density CMOS |
JP3161408B2 (ja) * | 1998-03-03 | 2001-04-25 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2000091452A (ja) | 1998-07-15 | 2000-03-31 | Toshiba Microelectronics Corp | 半導体記憶装置 |
JP2000068484A (ja) * | 1998-08-19 | 2000-03-03 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法並びに不揮発 性半導体記憶装置を内蔵したマイクロコンピュータ及び その製造方法 |
US6204123B1 (en) * | 1998-10-30 | 2001-03-20 | Sony Corporation | Vertical floating gate transistor with epitaxial channel |
US6135905A (en) * | 1999-02-26 | 2000-10-24 | Shimano (Singapore) Private Limited | Derailleur cable router with a cable housing support that pivots in multiple directions |
JP3973819B2 (ja) * | 1999-03-08 | 2007-09-12 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JP3743486B2 (ja) * | 1999-06-23 | 2006-02-08 | セイコーエプソン株式会社 | 不揮発性メモリトランジスタを含む半導体装置の製造方法 |
JP3345880B2 (ja) * | 1999-06-29 | 2002-11-18 | 日本電気株式会社 | 不揮発性メモリセルと電界効果トランジスタとを備えた半導体装置およびその製造方法 |
JP4547749B2 (ja) * | 1999-09-29 | 2010-09-22 | ソニー株式会社 | 不揮発性半導体記憶装置 |
KR100338823B1 (ko) * | 1999-12-30 | 2002-05-31 | 박종섭 | 반도체장치의 게이트전극 제조방법 |
JP2002288591A (ja) | 2001-03-28 | 2002-10-04 | Seiko Epson Corp | 磁気記録再生装置及び画像記録装置 |
TW484213B (en) * | 2001-04-24 | 2002-04-21 | Ememory Technology Inc | Forming method and operation method of trench type separation gate nonvolatile flash memory cell structure |
KR20020092114A (ko) * | 2001-06-02 | 2002-12-11 | 김대만 | 드레인 턴온 현상과 과잉 소거 현상을 제거한 sonos셀, 이를 포함하는 불휘발성 메모리 장치 및 그 제조방법 |
JP2003046002A (ja) | 2001-07-26 | 2003-02-14 | Sony Corp | 不揮発性半導体メモリ装置およびその動作方法 |
TW546840B (en) * | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
JP2003060064A (ja) * | 2001-08-08 | 2003-02-28 | Sharp Corp | Mosfet、半導体装置及びその製造方法 |
-
2003
- 2003-03-31 JP JP2003094517A patent/JP2004303918A/ja active Pending
-
2004
- 2004-03-18 TW TW093107267A patent/TW200501428A/zh not_active IP Right Cessation
- 2004-03-26 KR KR1020040020654A patent/KR101026288B1/ko active IP Right Grant
- 2004-03-30 US US10/811,830 patent/US7087955B2/en active Active
- 2004-03-31 CN CNB2004100319070A patent/CN100447988C/zh not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8264028B2 (en) | 2005-01-03 | 2012-09-11 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
CN103380489A (zh) * | 2010-12-20 | 2013-10-30 | 斯班逊有限公司 | 电荷捕捉场效晶体管中的制程界限工程 |
CN103380489B (zh) * | 2010-12-20 | 2016-08-24 | 赛普拉斯半导体公司 | 电荷捕捉场效晶体管中的制程界限工程 |
CN110707092A (zh) * | 2018-07-09 | 2020-01-17 | 联华电子股份有限公司 | 半导体存储器元件及其制作方法 |
CN110707092B (zh) * | 2018-07-09 | 2021-11-16 | 联华电子股份有限公司 | 半导体存储器元件及其制作方法 |
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JP2004303918A (ja) | 2004-10-28 |
US20040188753A1 (en) | 2004-09-30 |
KR101026288B1 (ko) | 2011-03-31 |
CN100447988C (zh) | 2008-12-31 |
US7087955B2 (en) | 2006-08-08 |
TWI328881B (zh) | 2010-08-11 |
KR20040086571A (ko) | 2004-10-11 |
TW200501428A (en) | 2005-01-01 |
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