CN1425196A - 导电互连 - Google Patents

导电互连 Download PDF

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Publication number
CN1425196A
CN1425196A CN00818631A CN00818631A CN1425196A CN 1425196 A CN1425196 A CN 1425196A CN 00818631 A CN00818631 A CN 00818631A CN 00818631 A CN00818631 A CN 00818631A CN 1425196 A CN1425196 A CN 1425196A
Authority
CN
China
Prior art keywords
alloy
copper
interconnection
silver
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00818631A
Other languages
English (en)
Chinese (zh)
Inventor
S·纳加诺
H·哈加特尔
J·李
J·比勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1425196A publication Critical patent/CN1425196A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
CN00818631A 1999-11-24 2000-11-14 导电互连 Pending CN1425196A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44902599A 1999-11-24 1999-11-24
US09/449,025 1999-11-24

Publications (1)

Publication Number Publication Date
CN1425196A true CN1425196A (zh) 2003-06-18

Family

ID=23782571

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00818631A Pending CN1425196A (zh) 1999-11-24 2000-11-14 导电互连

Country Status (7)

Country Link
US (3) US6758920B2 (enExample)
EP (1) EP1232525A2 (enExample)
JP (1) JP2003529206A (enExample)
KR (1) KR20020070443A (enExample)
CN (1) CN1425196A (enExample)
AU (1) AU1609501A (enExample)
WO (1) WO2001039250A2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100523236C (zh) * 2007-12-24 2009-08-05 昆明贵金属研究所 特种铜合金及其制备方法
CN102011094A (zh) * 2010-11-25 2011-04-13 福州阿石创光电子材料有限公司 一种光学蒸镀用材料及其制备方法
CN105364428A (zh) * 2015-12-24 2016-03-02 常熟市欧迪管业有限公司 凝汽器用钛管
CN105463244A (zh) * 2015-12-15 2016-04-06 苏州华安矿业科技有限公司 矿用多孔喷头
CN105463242A (zh) * 2016-01-05 2016-04-06 刘操 一种高导电率高延展性的铜合金导线及其制备方法
CN105463246A (zh) * 2015-12-02 2016-04-06 苏州龙腾万里化工科技有限公司 一种磨削机仪器零件用耐用合金
CN105624460A (zh) * 2015-12-29 2016-06-01 刘雷 一种高导电率高韧性的铜合金电缆导线及其制备方法
CN107739873A (zh) * 2017-09-30 2018-02-27 重庆鸽牌电线电缆有限公司 调相机用含银铜排坯料配方
CN107937878A (zh) * 2017-11-13 2018-04-20 有研亿金新材料有限公司 一种铜银合金靶材的制备方法
CN108085531A (zh) * 2016-11-21 2018-05-29 宜兴市帝洲新能源科技有限公司 一种地暖设备的弯头材料

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US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
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US6703308B1 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of inserting alloy elements to reduce copper diffusion and bulk diffusion
US7696092B2 (en) * 2001-11-26 2010-04-13 Globalfoundries Inc. Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect
US6703307B2 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of implantation after copper seed deposition
US6835655B1 (en) 2001-11-26 2004-12-28 Advanced Micro Devices, Inc. Method of implanting copper barrier material to improve electrical performance
US6861349B1 (en) 2002-05-15 2005-03-01 Advanced Micro Devices, Inc. Method of forming an adhesion layer with an element reactive with a barrier layer
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CN1839213A (zh) * 2003-08-21 2006-09-27 霍尼韦尔国际公司 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法
US7169706B2 (en) * 2003-10-16 2007-01-30 Advanced Micro Devices, Inc. Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition
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US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
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JP5014632B2 (ja) * 2006-01-13 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
KR20090051267A (ko) * 2006-09-08 2009-05-21 토소우 에스엠디, 인크 미세 그레인 사이즈 및 높은 전자 이동 저항성을 구비한 구리 스퍼터링 타겟 및 이를 제조하는 방법
JP5234306B2 (ja) * 2006-10-18 2013-07-10 三菱マテリアル株式会社 熱欠陥発生が少なくかつ表面状態の良好なｔｆｔトランジスターを用いたフラットパネルディスプレイ用配線および電極並びにそれらを形成するためのスパッタリングターゲット
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US8591631B2 (en) * 2007-07-31 2013-11-26 General Electric Company Method and apparatus to produce synthetic gas
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JP5491845B2 (ja) * 2009-12-16 2014-05-14 株式会社Ｓｈカッパープロダクツ スパッタリングターゲット材
JP5590328B2 (ja) * 2011-01-14 2014-09-17 三菱マテリアル株式会社 電気銅めっき用含リン銅アノードおよびそれを用いた電解銅めっき方法
JP5626582B2 (ja) * 2011-01-21 2014-11-19 三菱マテリアル株式会社 電気銅めっき用含リン銅アノードおよびそれを用いた電気銅めっき方法
WO2014132857A1 (ja) * 2013-03-01 2014-09-04 Jx日鉱日石金属株式会社 高純度銅コバルト合金スパッタリングターゲット
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JP5694503B2 (ja) * 2013-12-27 2015-04-01 Jx日鉱日石金属株式会社 自己拡散抑制機能を有するシード層及び自己拡散抑制機能を備えたシード層の形成方法
CN105463239A (zh) * 2015-12-28 2016-04-06 苏州众禹环境科技有限公司 工业用旋流分离机
US10269714B2 (en) 2016-09-06 2019-04-23 International Business Machines Corporation Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
CN107424664A (zh) * 2017-03-22 2017-12-01 合肥浦尔菲电线科技有限公司 一种复合高导电率导线
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CN100523236C (zh) * 2007-12-24 2009-08-05 昆明贵金属研究所 特种铜合金及其制备方法
CN102011094A (zh) * 2010-11-25 2011-04-13 福州阿石创光电子材料有限公司 一种光学蒸镀用材料及其制备方法
CN102011094B (zh) * 2010-11-25 2012-07-25 福州阿石创光电子材料有限公司 一种光学蒸镀用材料的制备方法
CN105463246A (zh) * 2015-12-02 2016-04-06 苏州龙腾万里化工科技有限公司 一种磨削机仪器零件用耐用合金
CN105463244A (zh) * 2015-12-15 2016-04-06 苏州华安矿业科技有限公司 矿用多孔喷头
CN105364428A (zh) * 2015-12-24 2016-03-02 常熟市欧迪管业有限公司 凝汽器用钛管
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CN105624460B (zh) * 2015-12-29 2017-10-31 陕西通达电缆制造有限公司 一种高导电率高韧性的铜合金电缆导线及其制备方法
CN107475557A (zh) * 2015-12-29 2017-12-15 刘雷 一种高导电率高韧性的铜合金电缆导线及其制备方法
CN105463242A (zh) * 2016-01-05 2016-04-06 刘操 一种高导电率高延展性的铜合金导线及其制备方法
CN108085531A (zh) * 2016-11-21 2018-05-29 宜兴市帝洲新能源科技有限公司 一种地暖设备的弯头材料
CN107739873A (zh) * 2017-09-30 2018-02-27 重庆鸽牌电线电缆有限公司 调相机用含银铜排坯料配方
CN107937878A (zh) * 2017-11-13 2018-04-20 有研亿金新材料有限公司 一种铜银合金靶材的制备方法

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WO2001039250A2 (en) 2001-05-31
US20020014289A1 (en) 2002-02-07
KR20020070443A (ko) 2002-09-09
WO2001039250A3 (en) 2001-12-13
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