DE69330702T2 - Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode - Google Patents

Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode

Info

Publication number
DE69330702T2
DE69330702T2 DE69330702T DE69330702T DE69330702T2 DE 69330702 T2 DE69330702 T2 DE 69330702T2 DE 69330702 T DE69330702 T DE 69330702T DE 69330702 T DE69330702 T DE 69330702T DE 69330702 T2 DE69330702 T2 DE 69330702T2
Authority
DE
Germany
Prior art keywords
production
storage medium
optical storage
atomization method
atomization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330702T
Other languages
English (en)
Other versions
DE69330702D1 (de
Inventor
Naoki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69330702D1 publication Critical patent/DE69330702D1/de
Publication of DE69330702T2 publication Critical patent/DE69330702T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
DE69330702T 1992-10-05 1993-10-04 Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode Expired - Fee Related DE69330702T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28818792 1992-10-05
JP21161393 1993-08-26

Publications (2)

Publication Number Publication Date
DE69330702D1 DE69330702D1 (de) 2001-10-11
DE69330702T2 true DE69330702T2 (de) 2002-07-11

Family

ID=26518744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330702T Expired - Fee Related DE69330702T2 (de) 1992-10-05 1993-10-04 Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode

Country Status (3)

Country Link
US (1) US5589040A (de)
EP (1) EP0592174B1 (de)
DE (1) DE69330702T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07192335A (ja) * 1993-12-27 1995-07-28 Shin Etsu Chem Co Ltd 光磁気記録媒体およびその製造方法
US5780966A (en) * 1995-04-20 1998-07-14 Nippondenso Co., Ltd. Electroluminescent device with improved blue color purity
US5965228A (en) * 1995-09-01 1999-10-12 Balzers Aktiengesellschaft Information carrier, method for producing same
JPH1021586A (ja) * 1996-07-02 1998-01-23 Sony Corp Ｄｃスパッタリング装置
US6111784A (en) * 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6432819B1 (en) * 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
CN1425196A (zh) 1999-11-24 2003-06-18 霍尼韦尔国际公司 导电互连
JP2001176137A (ja) * 1999-12-14 2001-06-29 Fuji Photo Film Co Ltd 記録媒体の製造方法
US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
US6503380B1 (en) 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
CN1831186A (zh) * 2001-10-25 2006-09-13 松下电器产业株式会社 制造光学记录介质的设备
US20050037240A1 (en) * 2003-03-31 2005-02-17 Daisaku Haoto Protective coat and method for manufacturing thereof
WO2005021828A2 (en) * 2003-08-21 2005-03-10 Honeywell International Inc. Copper-containing pvd targets and methods for their manufacture
DE10341244A1 (de) * 2003-09-03 2005-05-12 Creavac Creative Vakuumbeschic Einrichtung zur Vakuumbeschichtung wenigstens einer Aufzeichnungsschicht auf mindestens ein optisches Aufzeichnungsmedium

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3630881A (en) * 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
DE3335623A1 (de) * 1983-09-30 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer kohlenstoff enthaltenden schicht, kohlenstoff enthaltende schicht, verwendung einer kohlenstoff enthaltenden schicht und vorrichtung zur durchfuehrung eines verfahrens zur herstellung einer kohlenstoff enthaltenden schicht
DE3417732A1 (de) * 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens
JPS61183467A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd スパッタリング方法及びその装置
JPH0799595B2 (ja) * 1985-12-09 1995-10-25 松下電器産業株式会社 光学情報記録再生デイスクの製造方法
JPS63466A (ja) * 1986-06-18 1988-01-05 Matsushita Electric Ind Co Ltd スパツタリングタ−ゲツト
JPS63211717A (ja) * 1987-02-27 1988-09-02 Seiko Epson Corp ＜１００＞結晶方位オリエンテ−シヨン・フラツトＳｉウエ−ハ
JPS63238269A (ja) * 1987-03-26 1988-10-04 Mitsubishi Metal Corp マグネトロンスパツタリング用タ−ゲツト
US4834856A (en) * 1988-01-21 1989-05-30 Wehner Gottfried K Method and apparatus for sputtering a superconductor onto a substrate
JP2671397B2 (ja) * 1988-07-01 1997-10-29 住友化学工業株式会社 マグネトロンスパッタリング用ターゲット
EP0388852B1 (de) * 1989-03-20 1995-06-28 Tosoh Corporation Magnetooptischer Aufzeichnungsträger und Verfahren zu seiner Herstellung
JPH03126867A (ja) * 1989-10-09 1991-05-30 Fuji Photo Film Co Ltd スパッタリング方法
JPH0443906A (ja) * 1990-06-11 1992-02-13 Matsushita Electric Ind Co Ltd 光学的膜厚モニタ装置
KR930701633A (ko) * 1990-07-03 1993-06-12 챨스 이. 위커샴 2세 컴팩트 디스크 코팅을 위한 개량된 스퍼터 타게트와 그 사용 방법 및 타게트의 제조방법
DE4025231C2 (de) * 1990-07-11 1997-12-11 Leybold Ag Verfahren und Vorrichtung zum reaktiven Beschichten eines Substrats
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same

Also Published As

Publication number Publication date
DE69330702D1 (de) 2001-10-11
US5589040A (en) 1996-12-31
EP0592174A2 (de) 1994-04-13
EP0592174B1 (de) 2001-09-05
EP0592174A3 (en) 1994-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee