DE69330702D1 - Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode - Google Patents
Verfahren zur Herstellung eines optischen Speichermediums, ZerstäubungsmethodeInfo
- Publication number
- DE69330702D1 DE69330702D1 DE69330702T DE69330702T DE69330702D1 DE 69330702 D1 DE69330702 D1 DE 69330702D1 DE 69330702 T DE69330702 T DE 69330702T DE 69330702 T DE69330702 T DE 69330702T DE 69330702 D1 DE69330702 D1 DE 69330702D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- storage medium
- optical storage
- atomization method
- atomization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28818792 | 1992-10-05 | ||
JP21161393 | 1993-08-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69330702D1 true DE69330702D1 (de) | 2001-10-11 |
DE69330702T2 DE69330702T2 (de) | 2002-07-11 |
Family
ID=26518744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69330702T Expired - Fee Related DE69330702T2 (de) | 1992-10-05 | 1993-10-04 | Verfahren zur Herstellung eines optischen Speichermediums, Zerstäubungsmethode |
Country Status (3)
Country | Link |
---|---|
US (1) | US5589040A (de) |
EP (1) | EP0592174B1 (de) |
DE (1) | DE69330702T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07192335A (ja) * | 1993-12-27 | 1995-07-28 | Shin Etsu Chem Co Ltd | 光磁気記録媒体およびその製造方法 |
US5780966A (en) * | 1995-04-20 | 1998-07-14 | Nippondenso Co., Ltd. | Electroluminescent device with improved blue color purity |
US5965228A (en) * | 1995-09-01 | 1999-10-12 | Balzers Aktiengesellschaft | Information carrier, method for producing same |
JPH1021586A (ja) * | 1996-07-02 | 1998-01-23 | Sony Corp | Dcスパッタリング装置 |
US6111784A (en) * | 1997-09-18 | 2000-08-29 | Canon Kabushiki Kaisha | Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element |
US6858102B1 (en) | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
US6113761A (en) | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6432819B1 (en) * | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
KR20020070443A (ko) | 1999-11-24 | 2002-09-09 | 허니웰 인터내셔널 인코포레이티드 | 전도성 상호연결장치 |
JP2001176137A (ja) * | 1999-12-14 | 2001-06-29 | Fuji Photo Film Co Ltd | 記録媒体の製造方法 |
US7035138B2 (en) * | 2000-09-27 | 2006-04-25 | Canon Kabushiki Kaisha | Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions |
US6503380B1 (en) * | 2000-10-13 | 2003-01-07 | Honeywell International Inc. | Physical vapor target constructions |
KR20040049302A (ko) * | 2001-10-25 | 2004-06-11 | 마츠시타 덴끼 산교 가부시키가이샤 | 광디스크의 막형성방법 |
US20050037240A1 (en) * | 2003-03-31 | 2005-02-17 | Daisaku Haoto | Protective coat and method for manufacturing thereof |
KR20060037247A (ko) * | 2003-08-21 | 2006-05-03 | 허니웰 인터내셔널 인코포레이티드 | Cu-함유 PDⅤ 타겟과 그 제조방법 |
DE10341244A1 (de) * | 2003-09-03 | 2005-05-12 | Creavac Creative Vakuumbeschic | Einrichtung zur Vakuumbeschichtung wenigstens einer Aufzeichnungsschicht auf mindestens ein optisches Aufzeichnungsmedium |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3630881A (en) * | 1970-01-22 | 1971-12-28 | Ibm | Cathode-target assembly for rf sputtering apparatus |
DE3335623A1 (de) * | 1983-09-30 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer kohlenstoff enthaltenden schicht, kohlenstoff enthaltende schicht, verwendung einer kohlenstoff enthaltenden schicht und vorrichtung zur durchfuehrung eines verfahrens zur herstellung einer kohlenstoff enthaltenden schicht |
DE3417732A1 (de) * | 1984-05-12 | 1986-07-10 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens |
JPS61183467A (ja) * | 1985-02-08 | 1986-08-16 | Hitachi Ltd | スパッタリング方法及びその装置 |
JPH0799595B2 (ja) * | 1985-12-09 | 1995-10-25 | 松下電器産業株式会社 | 光学情報記録再生デイスクの製造方法 |
JPS63466A (ja) * | 1986-06-18 | 1988-01-05 | Matsushita Electric Ind Co Ltd | スパツタリングタ−ゲツト |
JPS63211717A (ja) * | 1987-02-27 | 1988-09-02 | Seiko Epson Corp | <100>結晶方位オリエンテ−シヨン・フラツトSiウエ−ハ |
JPS63238269A (ja) * | 1987-03-26 | 1988-10-04 | Mitsubishi Metal Corp | マグネトロンスパツタリング用タ−ゲツト |
US4834856A (en) * | 1988-01-21 | 1989-05-30 | Wehner Gottfried K | Method and apparatus for sputtering a superconductor onto a substrate |
JP2671397B2 (ja) * | 1988-07-01 | 1997-10-29 | 住友化学工業株式会社 | マグネトロンスパッタリング用ターゲット |
EP0388852B1 (de) * | 1989-03-20 | 1995-06-28 | Tosoh Corporation | Magnetooptischer Aufzeichnungsträger und Verfahren zu seiner Herstellung |
JPH03126867A (ja) * | 1989-10-09 | 1991-05-30 | Fuji Photo Film Co Ltd | スパッタリング方法 |
JPH0443906A (ja) * | 1990-06-11 | 1992-02-13 | Matsushita Electric Ind Co Ltd | 光学的膜厚モニタ装置 |
KR930701633A (ko) * | 1990-07-03 | 1993-06-12 | 챨스 이. 위커샴 2세 | 컴팩트 디스크 코팅을 위한 개량된 스퍼터 타게트와 그 사용 방법 및 타게트의 제조방법 |
DE4025231C2 (de) * | 1990-07-11 | 1997-12-11 | Leybold Ag | Verfahren und Vorrichtung zum reaktiven Beschichten eines Substrats |
US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
-
1993
- 1993-10-04 EP EP93307873A patent/EP0592174B1/de not_active Expired - Lifetime
- 1993-10-04 DE DE69330702T patent/DE69330702T2/de not_active Expired - Fee Related
-
1995
- 1995-12-20 US US08/580,047 patent/US5589040A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0592174A2 (de) | 1994-04-13 |
EP0592174A3 (en) | 1994-09-21 |
EP0592174B1 (de) | 2001-09-05 |
US5589040A (en) | 1996-12-31 |
DE69330702T2 (de) | 2002-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |